ST426S

ST426S SAMHOP | Alldatasheet

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N-C hannel Logic Level E nhancement Mode F ield E ffect T rans is tor TO-252 and TO-251 Package. ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless ot herwise not ed) S amHop Microelectronics C orp. P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m Ω ) 40V 53A @ V GS =1 0 V 10 @ V GS =4 . 5 V FEA TURES S u p e rh i g hd e n s ec e l ld e s i g nf o rl o wRDS (ON ). R ugged and reliable. S G D STU SERI ES TO-252A A(D-PAK) STD SERI ES TO-251(l-PAK) G G S S D D Typ S TU/ D426S Oct,2007 -55 to 175 a 100 Par am et er Sy m b o l Unit Drain-S ource Volt age V DS V G ate-S ource Voltage V GS V Drain C urrent-C ontinuous T a = -P ulsed ID A A A IDM Drain-S ource Diode Forward Current IS 25 C TH ERM A L CH A RA CTERI STI CS Thermal R esist ance, Junct ion-t o-Case Thermal R esist ance, Junct ion-t o-Ambient R JC R JA /WC /WC WMaximum P ower Dis s ipation P D O perating J unction and S torage Temperature R ange T J ,T STG C Ta= 25 C Limit Avalanche Current Avalanche Energy c c IAS EAS A mJ 100 ver1.1

Par am et er Sy m b o l C ondition Min Typ Max Unit OFF CHARACTERISTICS Drain-S ource B reakdown Voltage BV DS S =V GS 0V, I D 250uA= 40 V C E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unles s otherwis e noted) S TU/ D426S Zero G ate Voltage Drain C urrent IDS S V DS 32V, V GS 0V 1 Gat e- Bo d y Leak ag e IGSS V GS 20V, V DS 0V= = 100 nA ON CHAR ACTE R IS TICS a G a te T hre s hold V olta ge V GS(t h ) V DS V GS ,I D = 250uA= 13 V D ra in-S ourc e O n-S ta te R e s is ta nc e R DS (ON) V GS 10V, I D 10A V GS 4.5V, I D 5A O n-S ta te D ra in C urre nt ID(ON) V DS =1 0 V ,V GS = 10V A SF orward Transconductance FSg V DS 10V, I D 10A DYNAMIC CHAR ACTE R IS TICS b Input Capacit ance C IS S C RSS C OSSO utput C a pa c ita nc e R everse Transfer Capacit ance V DS =15V, V GS =0 V f =1.0MH Z P F P F P F S WITC HING C HAR AC TE R IS TIC S b Turn-On Delay Time Ri se T i m e Turn-O ff Delay Time tD(ON) tr tD(OFF) tf V DD = 15V ID =1A V GS =1 0 V R GEN =6o h m ns ns ns ns Total G ate C harge G ate-S ource C harge Gat e- Dr ai n Ch ar g e Qg Qgs Qgd V DS =15V, I D =1 0 A V GS =10V nC nC nC Fal l Ti m e uA mo h m mo h m V DS =15V, I D =10A,V GS =10V nC VDS =15V, I D =10A,V GS =4.5V 150 280 1600 7.3 3.5 ohmRgGat e resi st an ce V GS =0V, V DS = 0V, f=1.0MH Z 0.3 1.6 = = Drain-S ource B reakdown Voltage BV DS S =V GS 0V, I D 10mA= 45 Vd

b.G uaranteed by des ign, not s ubject to production tes ting. a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. Figure 2. Transfer Charact erist ics

F igure 6. B reakdown V oltage V ariation with T emperature V th, Normalized G ate-S ource T hreshold V oltage BV DS S , Normalized Drain-S ource B reakdown V oltageIs, S ource-drain current (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent V SD ,B o d yD i o d eF o r w a r dV o l t a g e( V ) T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) 20.0 10.0 1.0 0 1.2 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V GS ID=250uA -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 ID=250uA V GS ,G a t e -S o u r c eV o l t a g e( V ) R DS (on) (m ) F igure 7. On-R es is tance vs .G ate-S ource V oltage 24 68 100 F igure 5. G ate T hreshold V ariation with T emperature 25 C 125 C 25 C 75 C 125 C ID=9A 75 C S TU/ D426S Ω 0.960.720.480.24 5.0

F igure 12. Maximum S afe Op erat i ng Area V DS , Drain-S ource V oltage (V ) ID, Drain C urrent (A) 100 0.5 0.1 11 0 3 0 6 0 V GS =10V S ingle P uls e Tc= 25 C R DS (ON) Limit DC 100 ms 10ms 1ms V GS , G ate to S ource V oltage (V ) F igure 10. G ate C harge Qg, Tot al Gat e Charge (nC) 05 1 0 15 20 25 30 35 40 V DS =15V ID=10A Fi g u r e 9. Cap aci t an ce V DS , Drain-to S ource Voltage (V ) C, Cap aci t an ce (p F) 0 5 10 15 20 25 30 2400 2000 1600 1200 800 400 Ci ss Co ss Cr ss F igure 11.s witching characteris tics R g ,G a t eR e s i s t a n c e(Ω) S witching T ime (ns ) 100 61 0 6 0 1 0 0 600300 220 T D(off) Tf VDS =15V,ID=1A VGS =10V 600 TD(o n )Tr S TU/ D426S

F igure 13. S witching T es t C ircuit F igure 14. S witching Waveforms t V V t td(on) OUT IN on r 10% td(off) 90% 10% 10% 50% 50% 90% toff tf 90% PULSE WIDTH INVE R TE D V DD R D V V R S V G GS IN GEN OUT L T rans ient T hermal Impedance S quare Wave P ulse Duration (sec) F igure 16. Normalized T hermal T rans ient Impedance C urve r(t),Normalized E ffective 0.1 0.01 11 0 D=0.5 0.2 0.1 0.05 0.02 0.01 P DM 1. R J JA (t )=r (t ) * RJ JA 2. R J JA =S ee Dat asheet 3. T JM -T A =P DM*R J JA (t ) 4. Dut y Cycle, D=t 1/t2 SINGLE PULSE S TU/ D426S tp V(BR ) DSS IAS R G IAS 0.01tp D.U. T LV DS - VDD DRIVE R A 15V 20V F igure 15a. Figure 15b. Unc lamped sInductive Te t Circuit ofr mWave sUnc lamped Inductive

84 0.94 3 3 4 5 9 3 9 1 6.00 0 36 4 9.70 1 82 398 1.425 1.625 56 0.064 0.650 0.850 63 3 L2 0.600 0.024REF . REF . 2.29 BSC 0.090 BSC S TU/ D426S

UNIT:р PACKAGE TO-252 (16 р* A0 B0 K0 D0 D1 EE 1E 2 P0 P1 P2 T 6.80 ²0.1 10.3 ²0.1 2.50 ²0.1 ӿ2 ӿ1.5 + 0.1 16.0 0.3² 1.75 0.1² 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M N W T H K S G R V ӿ330 ² 0.5 ӿ97 ² 1.0 17.0 + 1.5 2.2 ӿ13.0 +0 . 5 - 0.2 10.6 2.0 ²0.5 S "A " TO-251 Tube S TU/ D426S