ST420S

ST420S SAMHOP | Alldatasheet

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N-C hannel Logic Level E nhancement Mode F ield E ffect T ransistor T O-252 and T O-251 P ackage. AB S OLUT E MAXIMUM R AT ING S (T A=25 C unless otherwise noted) S amHop Microelectronics C orp. P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) 40V 24A 24 @ V G S = 10V 30 @ V G S = 4.5V F E AT UR E S S uper high dense cell design for low R DS (ON). R ugged and reliable. S G D S T U S E R IE S T O-252AA(D-P AK ) S T D S E R IE S T O-251(l-P AK ) G G S S D D T HE R MAL C HAR AC T E R IS T IC S T hermal R esistance, J unction-to-C ase T hermal R esistance, J unction-to-Ambient R J C 3 50R J A /WC /WC P arameter S ymbol Limit Unit Drain-S ource Voltage V DS V G ate-S ource Voltage 20V G S V -P ulsed 24ID A 75IDM A Drain-S ource Diode F orward C urrent 8IS A Maximum P ower Dissipation P D W Operating and S torage Temperature R ange T J , T S T G -55 to 175 C @ T c=25 C 50 Drain C urrent-C ontinuous @ T C =25 C a Max S T U/D420S b J uly 05,2006

P arameter S ymbol C ondition Min Typ Max Unit OF F C HAR AC T E R IS T IC S Drain-S ource B reakdown Voltage B V DS S =V G S 0V, ID 250uA= 40 V Zero G ate Voltage Drain C urrent IDS S V DS 32V, V G S 0V= = 1 G ate-B ody Leakage IG S S V G S 20V, V DS 0V= = 10 uA ON C HAR AC T E R IS T IC S a G ate T hreshold Voltage V G S (th) V DS V G S , ID = 250uA= 1 1.9 3 V Drain-S ource On-S tate R esistance R DS (ON) V G S 10V, ID 10A V G S 4.5V, ID 8A On-S tate Drain C urrent ID(ON) V DS = 10V, V G S = 10V A SF orward Transconductance F Sg V DS 10V, ID 10A DY NAMIC C HAR AC T E R IS T IC S b Input C apacitance C IS S C R S S C OS SOutput C apacitance R everse Transfer C apacitance V DS =15V, V G S = 0V f =1.0MHZ P F P F P F S WIT C HING C HAR AC T E R IS T IC S b Turn-On Delay Time R ise Time Turn-Off Delay Time tD(ON) tr tD(OF F ) tf V DD = 15V ID = 1 A V G S = 10V R G E N = 3 ohm ns ns ns ns Total G ate C harge G ate-S ource C harge G ate-Drain C harge Qg Qgs Qgd V DS =20V, ID = 10A V G S =10V nC nC nC C F all T ime = = uA m ohm m ohm V DS =20V, ID =10A,V G S =10V nC VDS =20V, ID =10A,VG S =4.5V 110 750 2.5 ohmR gG ate resistance V G S =0V, V DS = 0V , f=1.0MHZ 3 S T U/D420S E LE C T R IC AL C HAR AC T E R IS T IC S (T C =25 C unles s otherwis e noted) 23.5

P arameter S ymbol C ondition Min Typ Max Unit E LE C T R IC AL C HAR AC T E R IS T IC S (T C =25 C unles s otherwis e noted) DR AIN-S O UR C E DIO DE C HAR AC T E R IS T IC S Diode F orward Voltage V S D V G S = 0V, Is = 8A V a Notes b.G uaranteed by design, not subject to production testing. a.P ulse Test:P ulse Width 300us, Duty C ycle 2%. F igure 2. Transfer C haracteristics F igure 4. On-R esistance Variation with Drain C urrent and Temperature ID, Drain C urrent (A) V G S , G ate-to-S ource Voltage (V ) R DS (on) (m W) On-R esistance ID, Drain C urrent (A) R DS (ON), Normalized S T U/D420S 1.75 1.60 1.45 1.30 1.15 1.0 0.8 -25 0 25 50 150 0.84 T j( C ) 12575 100 V G S =10V ID=10A T j, J unction T emperature ( C ) F igure 3. On-R esistance vs. Drain C urrent and G ate V oltage 6 12 18 24 300 V G S =10V V G S =4.5V V G S =4.5V ID=8A F igure 1. Output C haracteristics V DS , Drain-to-S ource Voltage (V ) ID, Drain C urrent(A) 0 0.5 1 1.5 2 2.5 3 V G S =3V V G S =4V V G S =3.5V V G S =4.5 T j=125 C -55 C 25 C 1.3 V G S =8V V G S =10V

F igure 6. B reakdown V oltage V ariation with T emperature V th, Normalized G ate-S ource T hres hold V oltage B V DS S , Normalized Drain-S ource B reakdown V oltageIs , S ource-drain current (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent V S D, B ody Diode F orward V oltage (V ) T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) 20.0 10.0 1.0 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 ID=250uA V G S , G ate- S ource Voltage (V ) R DS (on) (m W) F igure 7. On-R esistance vs. G ate-S ource V oltage 2 4 6 8 100 F igure 5. G ate T hres hold V ariation with T emperature 25 C 125 C 75 C 25 C 75 C 125 C ID=10A

F igure 12. Maximum S afe O perating Area V DS , Drain-S ource V oltage (V ) ID, Drain C urrent (A) 100 0.5 0.1 1 10 30 60 V G S =10V S ingle P uls e T c=25 C RDS(ON) Limit DC 100ms 10ms 1ms V G S , G ate to S ource V oltage (V ) F igure 10. G ate C harge Q g, T otal G ate C harge (nC ) 0 3 6 9 12 15 18 21 24 V DS =20V ID=10A F igure 9. C apacitance V DS , Drain-to S ource Voltage (V ) C , C apacitance (pF ) F igure 11.s witching characteris tics R g, G ate R es is tance (W) S witching T ime (ns ) 100 6 10 60 100 600300 220 T D(on)T D(off) T r T f V DS =15V ,ID=1A V G S =10V 0 5 10 15 20 25 30 900 750 600 450 300 150 C iss C oss C rss

F igure 11. S witching T est C ircuit F igure 12. S witching Waveforms t V V t td(on) OUT IN on r 10% td(off) 90% 10% 10% 50% 50% 90% toff tf 90% P ULS E WIDT H S T U/D420S INV E R T E D V DD R D V V R S V G G S IN G E N OUT L T ransient T hermal Impedance S quare Wave P ulse Duration (sec) F igure 13. Normalized T hermal T ransient Impedance C urve r(t),Normalized E ffective 0.1 0.01 1 10 D=0.5 0.2 0.1 0.05 0.02 0.01 P DM 1. R θJ A (t)=r (t) * R θJ A 2. R θJ A=S ee Datasheet 3. T J M-T A = P DM* R θJ A (t) 4. Duty C ycle, D=t1/t2 S ING LE P ULS E

84 0.94 3 3 4 5 9 3 9 1 6.00 0 36 4 9.70 1 82 398 1.425 1.625 56 0.064 0.650 0.850 6 33 L2 0.600 0.024REF. REF. 2.29 BSC 0.090 BSC S T U/D420S

UNIT:㎜ PACKAGE TO-252 (16 ㎜) A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T 6.80 ±0.1 10.3 ±0.1 2.50 ±0.1 ψ2 ψ1.5 + 0.1 - 0 16.0 0.3± 1.75 0.1± 7.5 ±0.15 8.0 ±0.1 4.0 ±0.1 2.0 ±0.15 0.3 ±0.05 UNIT:㎜ TAPE SIZE 16 ㎜ REEL SIZE ψ 330 M N W T H K S G R V ψ330 ± 0.5 ψ97 ± 1.0 17.0 + 1.5 - 0 2.2 ψ13.0 + 0.5 - 0.2 10.6 2.0 ±0.5 S S T U/D420S