ST303S

ST303S NJSEMI | Alldatasheet

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High surge current capability Low thermal impedance High speed performance 300A Typical Applications I Inverters I Choppers I Induction heating I All types of force-commutated converters Major Ratings and Characteristics Parameters 'T(AV) @TC T(RMS) 'TSM @5°Hz @60Hz I2t @ 50Hz @60Hz V /V DRM RRM tq range (*) L ST303S 300 471 7950 8320 316 288 400 to 1200 10 to 30 -40 to 125 Units A A A A KA2s KA2s V MS *) t = 10 to 20^s for 400 to 800V devices t = 15 to 30|js for 1000 to 1200V devices case style TO-209AE (TO-118) Quality Semi-Conductors

VDRv/VRRM' maximum repetitive peak voltage V 400 800 1000 1200 VRSM , maximum non-repetitive peak voltage V 500 • 900 1100 1300 'DRM/'RRM max- @ Tj = Tj max. mA Current Carrying Capability Frequency 50Hz 400Hz 1000HZ 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state currentdi/dt Case temperature Equivalent values for RC circuit 180°el — — J 670 480 230 470 330 140 v VDRW 10£}/0.47uF fV 1ftO°Bl 1050 1021 760 150 940 710 470 VDRM 10J2/0.47uF f\\s „ 5240 1800 730 4300 1270 430 w DRM 10n/0.47uF Units A V A/us On-state Conduction Parameter IT Max. average on-state current @ Case temperature I Max. RMS on-state current 'TSM Max' Pea^' one nalf cycle, non-repetitive surge current I2t Maximum I2t for fusing iNt Maximum I'v't for fusing ST303S 300 471 7950 8320 f 6690 7000 316 288 224 204 3160 Units A A KA2s KA2Vs Conditions 180° conduction, half sine wave DC @ 45°C case temperature t = 10ms t = 8.3ms t = 10ms t = 8.3ms t= 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100%VRRM reapplied Sinusoidal half wave, Initial Tj = Tj max t = 0.1 to 10ms, no voltage reapplied

VTM Max. peak on-state voltage VT(TO)1 Low level value of threshold voltage V 2 High level value of threshold voltage r.. Low level value of forward slope resistance r(2 High level value of forward slope resistance lu Maximum holding current l: Typical latching current ST303S 2.16 1.44 1.46 0.57 0.56 600 1000 Units V mQ mA Conditions ITM= 1255A, Tj = Tj max, t = 10ms sine wave pulse (16.7% x * x IT(AV) < X K x IT(W)), Tj = T, max. d>itxlT(AV)).TJ = TJrnax. (16.7%xItxlT(AV)<l<KxlT(AV)),TJ = TJmax. (I > t x IT(AV)), Tj = Tj max. T, = 25°C, IT> 30A Tj = 25°C, VA= 12V, Ra = 6i2, IG= 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current td Typical delay time t Max. turn-off time (*) ST303S 1000 0.80 Min Max Units A/us us Conditions Tj = Tj max, VDRM = rated VDRM lTU = 2xdi/dt TJ= 25-C. VOM = rated VDRM, ITM = 50A DC, tp= 1us Resistive load, Gate pulse: 10V, 5S2 source Tj = Tj max, ITM = 550A, commutating di/dt = 40A/MS VR = 50V, t = SOOps, dv/dt: see table in device code (*)t = 10 to 20usfor400 to 800V devices; t = 15 to SOuafor 1000 to 1200V devices. Blocking Parameter dv/dt Maximum critical rate of rise of off-state voltage IRRM Max, peak reverse and off-state IDRM leakage current ST303S 500 Units V/ns mA Conditions Tj = Tj max, linear to 80% VDRM, higher value available on request Tj = Tj max, rated VDRM/VRRM applied Triggering Parameter PGM Maximum peak gate power P Maximum average gate power IGM Max. peak positive gate current +VGM Maximum peak positive gate voltage -VQM Maximum peak negative gate voltage IQT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger IGD Max. DC gate current not to trigger VQD Max. DC gate voltage not to trigger ST303S 200 0.25 Units W A V mA V mA V Conditions Tj = Tj max, f - 50Hz, d% = 50 Tj = Tj max, t s 5ms Tj = Tj max, t <, 5ms Tj = Tj max, rated VDRM applied

Thermal and Mechanical Specifications Parameter Tj Max. junction operating temperature range T Max. storage temperature range RlhJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, ± 1 0% wl Approximate weight Case style ST303S -40to 125 -40 to 150 0.10 0.03 48.5 (425) 535 Units K/W Nm (Ibf-in) g TO-209AE(TO-118) Conditions DC operation Mounting surface, smooth, flat and greased Non lubricated threads See Outline Table ARmjc Conduction (The following table shows the increment of thermal resistence R when devices operate at different conduction angles than DC) Conduction angle 180" 120° 90° 60" 30° Sinusoidal conduction 0.011 0.013 0.017 0.025 0.041 Rectangular conduction 0.008 0.014 0.018 0.026 0.042 Units K/W Conditions Tj = Tj max. Ordering Information Table Device Code D Thyristor Essential part number 3 = Fast turn off S = Compression bonding Stud Voltage code: Code x 100 = VRRM (See Voltage Ratings table) P = Stud base 3/4" 16UNF-2A M = Stud base metric threads M24 x 1.5 Reapplied dv/dt code (for t test condition) tq code 0 = Eyetet terminals (Gate and Aux. Cathode Leads) 1 = Fast-on terminals (Gate and Aux. Cathode Leads) 3 = Threaded top terminal 3/8" 24UNF-2A Critical dv/dt: None= 500V/psec (Standard value) L = 1000V/usec (Special selection) dv/dt -1 combinations available dv/dt (V/us) tq(n*) up to 800V only for 1000/1200V CN CM CL CK CL CP CK CJ DN DM DL DK DP DK DJ DH 100 EN EM EL EK EK EJ EH 200 FN* FM FL* FK* FK* FJ* FH 400 HN HM HL HK HK HJ HH 'Standard part number. All other types available only on request.

22 (0.87) MAX. 4.5 (0,18) MAX. Case Style TO-209AE (TO-118) All dimensions in millimeters (inches)

• FOR METRIC DEVICE: M24 X 1 5 - LENGHT SCREW 21 (0.83) MAX. CERAMIC HOUSING Case Style TO-209AE (TO-118) with top thread terminal 3/8" All dimensions in millimeters (inches)
• FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0,83) MAX.