SST5018 MICROSS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx
FEATURES
DIRECT REPLACEMENT FOR SILICONIX SST5018 ZERO OFFSET VOLTAGE LOW ON RESISTANCE rDS(on) ≤ 75Ω ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐ 55°C to +200°C Operating Junction Temperature ‐ 55°C to +200°C Maximum Power Dissipation Continuous Power Dissipation 500mW MAXIMUM CURRENT Gate Current (Note 1) IG = ‐50mA MAXIMUM VOLTAGES Gate to Drain Voltage VGDS = 30V Gate to Source Voltage VGSS = 30V SST5018 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage 30 ‐‐ ‐‐ V IG = 1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage ‐‐ ‐‐ 10 VDS = ‐15V, ID = ‐1µA VDS(on) Drain to Source On Voltage ‐‐ ‐‐ ‐ 0.5 VGS = 0V, ID = ‐6mA IDSS Drain to Source Saturation Current (Note 2) ‐ 10 ‐‐ ‐‐ mA VDS = ‐20V, VGS = 0V IGSS Gate Reverse Current ‐‐ ‐‐ 2 nA VGS = 15V, VDS = 0V ID(off) Drain Cutoff Current ‐‐ ‐‐ ‐ 10 VDS = ‐15V, VGS = 12V ‐‐ ‐‐ ‐ 10 µA VDS = ‐15V, VGS = 7V IDGO Drain Reverse Current ‐‐ ‐‐ ‐ 2 nA VDG = ‐15V, IS = 0A rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 75 Ω ID = ‐1mA, VGS = 0V SST5018 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 75 Ω ID = 0A, VGS = 0V, f = 1kHz Ciss Input Capacitance ‐‐ ‐‐ 45 pF VDS = ‐15V, VGS = 0V, f = 1MHz Crss Reverse Transfer Capacitance ‐‐ ‐‐ 10 VDS = 0V, VGS = 12V, f = 1MHz SST5018 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC UNITS CONDITIONS td(on) Turn On Time 15 ns VGS(L) = 12V VGS(H) = 0V See Switching Circuit tr Turn On Rise Time 20 td(off) Turn Off Time 15 tf Turn Off Fall Time 50 SWITCHING TEST CIRCUIT SST5018 SWITCHING CIRCUIT PARAMETERS VDD ‐ 6V VGG 12V RL 910Ω RG 220Ω ID(on) ‐ 6mA The SST5018 is a single P-Channel JFET switch SST5018 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix SST5018 This p-channel analog switch is designed to provide low on-resistance and fast switching. The SOT-23 package provides ease of manufacturing, and a lower cost assembly option. (See Packaging Information). SST5018 Applications: Analog Switches Commutators Cho ppers SST5018 Benefits: Low Insertion Loss No offset or error voltage generated by closed switch Purel y resistive Micross Components Europe Available Packages: SST5018 in SOT-23 SST5018 in bare die. Please contact Micross for full package and die dimensions Note 1 ‐ Absolute maximum ratings are limiting values above which SST5018 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3% Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution SOT-23 (Top View)