SST4392 MICROSS | Alldatasheet
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DIRECT REPLACEMENT FOR SILICONIX SST4392 LOW ON RESISTANCE rDS(on) ≤ 60Ω LOW GATE OPERATING CURRENT ID(off) = 5pA FAST SWITCHING t(ON) ≤= 15ns ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐ 65°C to +200°C Operating Junction Temperature ‐ 55°C to +200°C Maximum Power Dissipation Continuous Power Dissipation 350mW MAXIMUM CURRENT Gate Current (Note 1) IG = 50mA MAXIMUM VOLTAGES Gate to Drain Voltage / Gate to Source Voltage ‐ 35V SST4392 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐ 35 ‐‐ ‐‐ V IG = ‐1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage ‐ 2 ‐‐ ‐ 5 VDS = 15V, ID = 10nA VGS(F) Gate to Source Forward Voltage ‐‐ 0.7 1 IG = 1mA, VDS = 0V VDS(on) Drain to Source On Voltage ‐‐ 0.25 ‐‐ VGS = 0V, ID = 3mA VDS(on) Drain to Source On Voltage ‐‐ 0.3 0.4 VGS = 0V, ID = 6mA VDS(on) Drain to Source On Voltage ‐‐ 0.35 ‐‐ VGS = 0V, ID = 12mA IDSS Drain to Source Saturation Current2 25 ‐‐ ‐‐ mA VDS = 20V, VGS = 0V IGSS Gate Reverse Current ‐‐ ‐ 5 ‐ 100 pA VGS = ‐20V, VDS = 0V IG Gate Operating Current ‐‐ ‐ 5 ‐‐ VDG = 15V, ID = 10mA ID(off) Drain Cutoff Current ‐‐ 5 100 VDS = 10V, VGS = ‐10V rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 60 Ω VGS = 0V, ID = 1mA SST4392 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC TYP MIN MAX UNITS CONDITIONS gfs Forward Transconductance 6 ‐‐ ‐‐ mS VDS = 20V, ID = 1mA, f = 1kHz gos Output Conductance 25 ‐‐ ‐‐ µS VDS = 20V, ID = 1mA, f = 1kHz rds(on) Drain to Source On Resistance ‐‐ ‐‐ 60 Ω VGS = 0V, ID = 0A, f = 1kHz Ciss Input Capacitance 13 ‐‐ ‐‐ pF VDS = 20V, VGS = 0V, f = 1MHz Crss Reverse Transfer Capacitance 3.6 ‐‐ ‐‐ VDS = 0V, VGS = ‐5V, f = 1MHz Crss 3.5 ‐‐ ‐‐ VDS = 0V, VGS = ‐7V, f = 1MHz Crss 3.1 ‐‐ ‐‐ VDS = 0V, VGS = ‐12V, f = 1MHz en Equivalent Input Noise Voltage 3 ‐‐ ‐‐ nV/√Hz VDS = 10V, ID = 10mA, f = 1kHz SST4392 SWITCHING ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC TYP MIN MAX UNITS CONDITIONS td(on) Turn On Time 2 ‐‐ ‐‐ ns VDD = 10V, VGS(H) = 0V tr 2 ‐‐ ‐‐ td(off) Turn Off Time 6 ‐‐ ‐‐ tf 13 ‐‐ ‐‐ Notes: 1. Absolute ratings are limiting values above which serviceability may be impaired 2. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3% SST4392 SWITCHING CIRCUIT PARAMETERS SWITCHING CIRCUIT VGS(L) ‐ 7V RL 1600Ω ID(on) 6mA SST4392 Single N-Channel JFET switch Linear Systems replaces discontinued Siliconix SST4392 The SST4392 features many of the superior characteristics of JFETs which make it a good choice for demanding analog switching applications and for specialized amplifier circuits. SST4392 Applications: Analog Switches Choppers, Sample-and-Hold Normally “On” Switches, Current Limiters SST4392 Benefits: Low Error Voltage High-Speed Analog Circuit Performance Negligible “Off-Error, ” Excellent Accuracy Good Frequency Response, Low Glitches Eliminates Additional Bufferin g Micross Components Europe Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution Available Packages: SST4392 in SOT-23 SST4392 in bare die. Contact Micross for full package and die dimensions SOT-23 (Top View)