SST404_PDIP MICROSS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
FEATURES
LOW DRIFT | V GS1‐2 / T| = 10µV/°C TYP. LOW NOISE en = 6nV/Hz @ 10Hz TYP. LOW PINCHOFF Vp = 2.5V TYP. ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐ 65°C to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor – Note 1 ‐VGSS Gate Voltage to Drain or Source 50V ‐VDSO Drain to Source Voltage 50V ‐IG(f) Gate Forward Current 10mA Maximum Power Dissipation Device Dissipation @ Free Air – Total 300mW MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS | V GS1‐2 / T| max. DRIFT VS. TEMPERATURE 25 µV/°C VDG=10V, ID=200µA TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOLTAGE 15 mV VDG=10V, ID=200µA ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS BVGSS Breakdown Voltage 50 60 ‐‐ V VDS = 0 ID=1nA BVGGO Gate‐To‐Gate Breakdown ±50 ‐‐ ‐‐ V I G= 1nA ID= 0 IS= 0 YfSS TRANSCONDUCTANCE Full Conduction 2000 7000 µmho VDG= 10V VGS= 0V f = 1kHz YfS Typical Operation 1000 ‐‐ 2000 µmho VDG= 15V ID= 200µA f = 1kHz |YFS1‐2 / Y FS| Mismatch ‐‐ 0.6 3 % IDSS DRAIN CURRENT Full Conduction 0.5 mA VDG= 10V VGS= 0V |IDSS1‐2 / IDSS| Mismatch at Full Conduction ‐‐ 1 5 % VGS(off) or Vp GATE VOLTAGE Pinchoff voltage ‐0.5 ‐2.5 V VDS= 15V ID= 1nA VGS(on) Operating Range ‐‐ ‐‐ ‐ 2.3 V VDS=15V ID=200µA ‐IGmax. GATE CURRENT Operating ‐15 pA VDG= 15V ID= 200µA ‐IGmax. High Temperature ‐‐ ‐‐ ‐ 10 nA TA= +125°C ‐IGSSmax. At Full Conduction ‐‐ ‐‐ 100 pA VDS =0 ‐IGSSmax. High Temperature 5 5 5 pA VDG= 15V TA= +125°C YOSS OUTPUT CONDUCTANCE Full Conduction µmho VDG= 10V VGS= 0V YOS Operating ‐‐ 0.2 2 µmho VDG= 15V ID= 500µA CMR COMMON MODE REJECTION ‐20 log | V GS1‐2/ V DS| dB VDS = 10 to 20V ID=30µA NF NOISE Figure 0.5 dB VDS= 15V VGS= 0V RG= 10M f= 100Hz NBW= 6Hz en Voltage ‐‐ 20 ‐‐ nV/√Hz VDS=15V ID=200µA f=10Hz NBW=1Hz CISS CAPACITANCE Input pF VDS= 15V ID= 200µA f= 1MHz CRSS Reverse Transfer ‐‐ ‐‐ 1.5 pF The SST404 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET SST404 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET SST404 Applications: Wideband Differential Amps High-Speed,Temp-Compensated Single-Ended Input Amps High-Speed Comparators Impedance Converters and vibrations detectors. The SST404 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The SST404 features a 5- mV offset and 10-µV/°C drift. The SST404 is a direct replacement for discontinued Siliconix SST404. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). Linear Systems replaces discontinued Siliconix SST404 Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired PDIP / SOIC (Top View) Available Packages: SST404 in PDIP / SOIC SST404 available as bare die Please contact Micross for full package and die dimensions Micross Components Europe Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution