SST310_SOT-23 MICROSS | Alldatasheet
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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx
FEATURES
DIRECT REPLACEMENT FOR SILICONIX SST310 OUTSTANDING HIGH FREQUENCY GAIN Gpg = 11.5dB LOW HIGH FREQUENCY NOISE NF = 2.7dB ABSOLUTE MAXIMUM RATINGS @ 25°C1 Maximum Temperatures Storage Temperature ‐ 55°C to +150°C Operating Junction Temperature ‐ 55°C to +135°C Maximum Power Dissipation Continuous Power Dissipation 350mW MAXIMUM CURRENT Gate Current 10mA MAXIMUM VOLTAGES Gate to Drain Voltage or Gate to Source Voltage ‐ 25V SST310 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNIT CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐ 25 ‐‐ ‐‐ V VDS = 0V, IG = ‐1µA VGS(F) Gate to Source Forward Voltage 0.7 ‐‐ 1 VDS = 0V, IG = 10mA VGS(off) Gate to Source Cutoff Voltage ‐ 2 ‐‐ ‐ 6.5 VDS = 10V, ID = 1nA IDSS Drain to Source Saturation Current2 24 ‐‐ 60 mA VDS = 10V, VGS = 0V IG Gate Operating Current (Note 3) ‐‐ ‐ 15 ‐‐ pA VDG = 9V, ID = 10mA rDS(on) Drain to Source On Resistance ‐‐ 35 ‐‐ Ω VGS = 0V, ID = 1mA SST310 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNIT CONDITIONS gfs Forward Transconductance 8 14 ‐‐ mS VDS = 10V, ID = 10mA , f = 1kHz gos Output Conductance ‐‐ 110 250 µS Ciss Input Capacitance ‐‐ 4 5 pF VDS = 10V, VGS = ‐10V , f = 1MHz Crss Reverse Transfer Capacitance ‐‐ 1.9 2.5 en Equivalent Noise Voltage 6 ‐‐ ‐‐ nV/√Hz VDS = 10V, ID = 10mA , f = 100Hz SST310 HIGH FREQUENCY CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP MAX UNIT CONDITIONS NF Noise Figure f = 105MHz ‐‐ 1.5 ‐‐ dB V DS = 10V, ID = 10mA f = 450MHz ‐‐ 2.7 ‐‐ dB Gpg Power Gain3 f = 105MHz ‐‐ 16 ‐‐ gfg Forward Transconductance f = 105MHz ‐‐ 14 ‐‐ mS gog Output Conductance f = 105MHz ‐‐ 0.16 ‐‐ SST310 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix SST310 The SST310 is a high frequency n-channel JFET offering a wide range and low noise performance. The SOT-23 package is well suited for cost sensitive applications and mass production. (See Packaging Information). SST310 Applications: UHV / VHF Amplifiers Mixers Oscillators SST310 Benefits: High Power Low Noise gain Dynamic Range greater than 100dB Easil y matched to 75Ω input Micross Components Europe Available Packages: SST310 in SOT-23 SST310 in bare die. Please contact Micross for full package and die dimensions Note 1 ‐ Absolute maximum ratings are limiting values above which SST310 serviceability may be impaired. Note 2 ‐ Pulse test : PW ≤ 300µs, Duty Cycle ≤ 3% Note 3 ‐ Measured at optimum input noise match Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution SOT-23 (Top View)