U309 NJSEMI | Alldatasheet

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Technical content

, L/ nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel JFETs TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 J/SST/U308 Series J308 SST308 U309 J309 SST309 U310 J310 SST310 PRODUCT SUMMARY Part Number J308 J309 J310 SST308 SST309 SST310 U309 U310 Vosfoto (V) -1 to -6.5 -1 to -4 -2 to -6.5 -1 to -6.5 -1 to^l -2 to -6.5 -1 to -4 -2.5 to -6 V,BR,GSS Min (V) -25 -25 -25 -25 -25 -25 -25 -25 gfsMin (mS) loss Mi" (mA)

FEATURES

  • Excellent High Frequency Gain: Gps 11.5 dB@ 450 MHz
  • Very Low Noise: 2.7 dB @ 450 MHz
  • Very Low Distortion
  • High ac/dc Switch Off-Isolation BENEFITS
  • Wideband High Gain
  • Very High System Sensitivity
  • High Quality of Amplification
  • High-Speed Switching Capability
  • High Low-Level Signal Amplification

APPLICATIONS

  • High-Frequency Amplifier/Mixer
  • Oscillator
  • Sample-and-Hold
  • Very Low Capacitance Switches

DESCRIPTION

The J/SST/U308 series offers superb amplification characteristics. Of special interest is its high-frequency performance. Even at 450 MHz, this series offers high power gain at low noise. Low-cost J series TO-226AA (TO-92) packaging supports automated assembly with tape-and-reel options. The SST series TO-236 (SOT-23) package provides surface-mount capabilities and is available with tape-and-reel options. The U series hermetically-sealed TO-206AC (TO-52) package supports full military processing. (See Military and Packaging Information for further details.) For similar dual products packaged in the TO-78, see the U430/431 data sheet. TO-226AA (TO-92) TO-236 (SOT-23) Top View SST308 (Z8)" SST309 (Z9)* SST310 (ZO)* "Marking Code for TO-236 TO-206AC (TO-52) G and Case NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Gate-Drain, Gate-Source Voltage -25 V Operating Junction Temperature -55 to 150"C Power Dissipation : (J/SST Prefixes)3 350 mW (U Prefix)" 500 mW Notes a. Derate 2.8 mW/°C above 25°C b. Derate 4 mW/°C above 25° C SPECIFICATIONS FOR J/SST308, J/SST309 AND J/SST310 (TA = 25 C UNLESS NOTED) Parameter Symbol Test Conditions Typa Limits J/SST308 Min Max J/SST309 Min Max J/SST310 Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Current Gate Reverse Current Gate Operating Current Drain-Source On-Resistance Gate-Source Forward Voltage V(BR)GSS VGS(off) bss IGSS IG rDS(on) VoS(F) IG = -1 MA , VDS = 10V VDS = 10V, VGS = -15V VDS = 0 V ID = 1 nA VGS = 0 v , VDS = 0 V TA=125°C VDG = 9V, ID = 10mA VGS = 0 V, D = 1 mA IG = 10mA VDS = 0 V Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage Qfs 9os ciss Crss en VDS=10 V, f=1 VDS =10 \\ = 1 MHz J -35 -0.002 -0.001 -15 0.7 -25 -6.5 -25 -25 -6.5 V V mA nA uA PA Q V ID = 10mA kHz t J J SST J SST VDS = 10 V, b = 10mA f = 100 Hz 110 1.9 1.9 250 2.5 250 2.5 250 2.5 mS uS pF nV/ VHZ High Frequency Common-Gate Forward Transconductance Common-Gate Output Conductance Common-Gate Power Gainc Noise Figure 9fg 9og Gpg NF VDS =10 V ID = 10 mA f= 105 MHz f = 450 MHz f = 105MHz f = 450 MHz f = 105 MHz f = 450 MHz f = 105 MHz f = 450 MHz 0.16 0.55 11.5 1.5 2.7 mS dB Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW < 300 us duty cycle < 3%. c. Gain (Gpg) measured at optimum input noise match.

SPECIFICATIONS FOR U309 AND U31O (TA = 25 C UNLESS NOTED) Parameter Symbol Test Conditions Typa Limits U309 Min Max U310 Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Current Gate Reverse Current Gate Operating Current Drain-Source On-Resistance Gate-Source Forward Voltage V(BR)GSS VcS(off) bss 'GSS IG TDS(on) VGS(F) IG = -1 MA , VDS = 0 V VDS = 10V, ID = 1 nA VDS = iov, vos = ov VGS = -15V,VDS = OV TA=125°C VDG = 9V, ID = 10mA VGS = 0 V, D = 1 mA IG = 10mA, VDS = 0 V -35 -0.002 -0.001 -15 0.7 -25 -0.15 -0.15 I -25 -2.5 -0.15 0.15 I V V mA nA uA PA H V Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage High Frequency Common-Gate Forward Transconductance Common-Gate Output Conductance Common-Gate Power Gain0 Noise Figure 9f> 9os Ciss Crss en 9fg Sog GW NF VDS= 10 V, ID = 10mA f = 1 kHz VDS = 10 v, VGS = -iov f=1 MHz VDS =10 V, ID = 10mA f = 100 Hz 110 1.9 250 2.5 250 2.5 mS uS pF nV/ VHz f= 105 MHz f = 450 MHz f= 105 MHz f = 450 MHz Vn<= = 10 V ID = 10mA f= 105 MHz f = 450 MHz f = 105MHz f = 450 MHz 0.16 0.55 11.5 1.5 2.7 3.5 3.5 mS dB Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW < 300 us duty cycle < 3%. c. Gain (Gpg) measured at optimum input noise match.