SST211 CALOGIC | Alldatasheet
Document overview
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Technical content
N-Channel Enhancement-Mode SST211 / SST213 / SST215
FEATURES
- • High Gain
- • Surface Mount Package
APPLICATIONS
- • Ultra High Speed Analog Switching
- • Sample and Hold
- • Multiplexers
- • High Gain Amplifiers
DESCRIPTION
Designed for audio, video and high frequency applications, the SST211 Series is a high speed, ultra low capacitance SPST analog switch. Utilizing Calogic’s proprietary DMOS processing the SST211 Series features an integrated zener diode designed to protect the gate from electrical over stress.
ORDERING INFORMATION
Part Package Temperature Range SST211 SOT-143 Surface Mount -55 oC to +125oC SST213 SOT-143 Surface Mount -55 oC to +125oC SST215 SOT-143 Surface Mount -55 oC to +125oC XSST211 Sorted Chips in Carriers -55oC to +125oC XSST213 Sorted Chips in Carriers -55oC to +125oC XSST215 Sorted Chips in Carriers -55oC to +125oC CORPORATION PIN CONFIGURATION SCHEMATIC DIAGRAM GATE (3) DRAIN (2) BODY (4) SOURCE (1) CD1-1 PRODUCT MARKING SST211 211 SST213 213 SST215 215
ABSOLUTE MAXIMUM RATINGS (Tc = +25oC unless otherwise noted) Parameter Breakdown Voltages SST211 SST213 SST215 Unit VDS +30 +10 +20 V VSD +10 +10 +20 V VDB +30 +15 +25 V VSB +15 +15 +25 V VGS -15 -15 -25 V +25 +25 +30 V +25 +25 +30 V VGD -30 -15 -25 V +25 +25 +30 V Linear Derating Factor3.6mW/ o ELECTRICAL CHARACTERISTICS (Tc = +25oC unless otherwise noted) SYMBOL CHARACTERISTICS SST211 SST213 SST215 UNIT TEST CONDITIONSMIN TYP MAX MIN TYP MAX MIN TYP MAX STATIC BVDS Drain-Source Breakdown Voltage 30 35 V ID = 10µA, VGS = VBS = 0 10 25 10 25 20 25 I D = 10nA, VGS = VBS = -5V BVSD Source-Drain Breakdown Voltage 10 10 20 I S = 10nA, VGD = VBD = -5V BVDB Drain-Body Breakdown Voltage 15 15 25 ID = 10nA, VGB = 0 Source OPEN BVSB Source-Body Breakdown Voltage 15 15 25 I S = 10µA, VGB = 0 Drain OPEN ID(OFF) Drain-Source OFF Current 0.2 10 0.2 10 nA VDS = 10V VGS = VBS = -5V 0.2 10 V DS = 20V IS(OFF) Source-Drain OFF Current 0.6 10 0.6 10 V SD = 10V VGD = VBD = -5V 0.6 10 V SD = 20V IGBS Gate-Body Leakage Current 10 10 µA VGB = 25V VDB = VSB = 0
10 V GB = 30V
rds(on) Drain-Source 1 ON Resistance 50 70 50 70 50 70 ohms VGS = 5V ID = 1mA VSB = 030 45 30 45 30 45 V GS = 10V DYNAMIC gfs Common-Source 1 Foward Transcond. 10 12 10 12 10 12 mS VDS = 10V, ID = 20mA f = 1KHz, VSB = 0 pF VDS = 10V VGS = VBS = -15V f = 1MHz ns VDD = 5V, VG(ON) = 10V t(OFF) Turn OFF Time 10 10 10 NOTE 1: Pulse Test, 80 Sec, 1% Duty Cycle Typical Performance Characteristics: See SD211-215 Series