SST213DE MICROSS | Alldatasheet
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Demo (http://www.verypdf.com) Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com Features: Ultra‐High Speed Switching—tON: 1ns Ultra‐Low Reverse Capacitance: 0.2pF Low Guaranteed RDS @5V Low Turn‐On Threshold Voltage (1.5V max) N‐Channel Enhancement Mode Benefits: High‐Speed System Performance Low Insertion Loss at High Frequencies Low Transfer Signal Loss Single Supply Operation & Simple Driver Requirement Description: The SST211DE / SST213DE / SST215DE are enhancement‐mode MOSFETs designed for high speed low‐glitch switching in audio, video and high‐frequency applications. The family is normally used for ±5V analog switching or as a high speed driver of the SD214. These MOSFETs utilize lateral construction to achieve low capacitance and ultra‐fast switching speeds. An integrated Zener diode provides ESD protection A poly‐silicon gate is featured for manufacturing reliability. See SST5000 and SST54000 series for quad configurations. For non‐zener protected versions see SST210DE / SST214DE series Availability: SST211DE / SST213DE / SST215DE – TO‐253 (SOT‐143) SST211DE / SST213DE / SST215DE ‐ Bare die form Contact Micross for full package dimensions MAXIMUM RATINGS LIMIT IN VOLTS MAXIMUM RATINGS (Continued) LIMIT UNIT SST211 SST213 SST215 Gate‐Drain, Gate‐Source Voltage ‐ 30/25 ‐ 15/25 ‐ 25/30 Drain Current 50 mA Gate‐Substrate Voltage ‐ 0.3/25 ‐ 0.3/25 ‐ 0.3/30 Lead Temperature (1/16” from ease, 10s) 300 °C Drain‐Source Voltage 30 10 20 Storage Temperature ‐ 65 to 150 °C Source‐Drain Voltage 10 10 20 Operating Junction Temperature ‐ 55 to 125 °C Drain ‐Substrate Voltage 30 15 25 Power Dissipation Derate 3mW/C° above 25°C 300 mW Source‐Substrate Voltage 15 15 25 ELECTRICAL SPECIFICATION TA = 25°C unless otherwise noted SYMBOL TEST CONDITIONS TYP LIMITS UNIT SST211DE SST213DE SST215DE MIN MAX MIN MAX MIN MAX DRAIN‐SOURCE BREAKDOWN VOLTAGE V(BR)DS VGS = VBS = 0V, ID = 10µA 35 30 ‐ ‐ ‐ ‐ ‐ V VGS = VBS = ‐5V, ID = 10nA 30 10 ‐ 10 ‐ 20 ‐ SOURCE‐DRAIN BREAKDOWN VOLTAGE V(BR)SD VGD = VBD = ‐5V, IS = 10nA 22 10 ‐ 10 ‐ 20 ‐ DRAIN‐SUBSTRATE BREAKDOWN VOLTAGE V(BR)DBO VGB = 0V, ID = 10nA Source Open 35 15 ‐ 15 ‐ 25 ‐ SOURCE‐SUBSTRATE BREAKDOWN VOLTAGE V(BR)SBO VGB = 0V, IS = 10µA Drain Open 35 15 ‐ 15 ‐ 25 ‐ DRAIN‐SOURCE LEAKAGE IDS(off) VGS=VBS =‐5V VDS = 10V 0.4 ‐ 10 ‐ 10 ‐ ‐ nA SOURCE‐DRAIN LEAKAGE ISD(off) VGD =VBD=‐5V VSD = 10V 0.5 ‐ 10 ‐ 10 ‐ ‐ GATE LEAKAGE IGBS VDB = VSB = 0V , VGB = 30V 0.01 ‐ 100 ‐ 100 ‐ 100 DRAIN‐SOURCE‐ON RESISTANCE RDS(on) VSB = 0V ID = 1mA VGS = 5V 60 ‐ 75 ‐ 75 ‐ 75 Ω VGS = 10V 40 ‐ 50 ‐ 50 ‐ 50 FORWARD TRANSCONDUCTANCE gfs VDS = 10V , VSB = 0V ID = 20mA, f = 1kHz 10.5 9 ‐ 9 ‐ ‐ 9 mS GATE NODE CAPACITANCE C(GS+GD+GB) VDS = 10V , f = 1MHz VGS = VBS = ‐15V pF DRAIN NODE CAPACITANCE C(GD+GB) 1.1 ‐ 1.5 ‐ 1.5 ‐ 1.5 SOURCE NODE CAPACITANCE C(GS+SB) 3.7 ‐ 5.5 ‐ 5.5 ‐ 5.5 REVERSE TRANSFER CAPACITANCE Crss 0.2 ‐ 0.5 ‐ 0.5 ‐ 0.5 TURN‐ON TIME tD(on) VSB = 0V, VIN 0 to 5V, RG = 25Ω, VDD = 5V RL = 680Ω 0.5 ‐ 1 ‐ 1 ‐ 1 ns tr 0.6 ‐ 1 ‐ 1 - 1 TURN‐OFF TIME tD(off) 2 ‐ ‐ ‐ ‐ - - tf 6 ‐ ‐ ‐ ‐ - - SST211DE / SST213DE / SST215DE N-Channel DMOS Switch - Zener Protected Applications: Fast Analog Switching Fast Sample & Holds Pixel‐Rate Switching DAC Deglitchers High‐Speed Driver SST211 / 213 / 215 Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Pinout: Top View This is trial version If you want get full version, please register it, thank you. www.verypdf.com Demo (http://www.verypdf.com)Demo (http://www.verypdf.com)