SST213

SST211-T1 TEMIC | Alldatasheet

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Technical content

S-51850—Rev. F, 14-Apr-97 N-Channel Lateral DMOS FETs SD211DE SD213DE SD215DE SST211 SST213 SST215 Product Summary Part Number V (BR)DS Min (V) V GS(th) Max (V) rDS(on) Max () C rss Max (pF) tON Max (ns) SD211DE 30 1.5 45 @ V GS = 10 V 0.5 2 SD213DE 10 1.5 45 @ V GS = 10 V 0.5 2 SD215DE 20 1.5 45 @ V GS = 10 V 0.5 2 SST211 30 1.5 50 @ V GS = 10 V 0.5 2 SST213 10 1.5 50 @ V GS = 10 V 0.5 2 SST215 20 1.5 50 @ V GS = 10 V 0.5 2 Features Benefits Applications Ultra-High Speed Switching—tON : 1 ns Ultra-Low Reverse Capacitance: 0.2 pF Low Guaranteed rDS @ 5 V Low Turn-On Threshold V oltage N-Channel Enhancement Mode High Speed System Performance Low Insertion Loss at High Frequencies Low Transfer Signal Loss Simple Driver Requirement Single Supply Operation Fast Analog Switch Fast Sample-and-Holds Pixel-Rate Switching DAC Deglitchers High-Speed Driver

Description

The SD211DE/SST211 series consists of enhancement- mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD211 may be used for 5-V analog switching or as a high speed driver of the SD214. The SD214 is normally used for 10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. An integrated Zener diode provides ESD protection. These devices feature a poly-silicon gate for manufacturing reliability. For similar products see: quad array—SD5000/5400 series and non-Zener protection—SD210DE/214DE. /C0068/C0068 /C0068/C0068 /C0068/C0053/C0068 /C0068 /C0068 /C0053 /C0068/C0053 &/C0053 &/C0052 /C0068 /C0052 &/C0053 G S D TO-206AF (TO-72) Body Substrate (Case)1 %#!" " Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70295. Applications information may also be obtained via FaxBack, request document #70607.

2 Siliconix

S-51850—Rev. F, 14-Apr-97 Absolute Maximum Ratings (TA = 25/C0095C Unless Otherwise Noted) /C0071/C0097/C0116/C0101/C0262/C0068/C0114/C0097/C0105/C0110/C0044 /C0071/C0097/C0116/C0101/C0262/C0083/C0111/C0117/C0114/C0099/C0101 /C0086/C0111/C0108/C0116/C0097/C0103/C0101 /C0083/C0068211/C0068/C0069/C0047/C0083/C0083/C0084211 /C0045/C0051/C0048/C0047/C0050/C0053 /C0086 /C0083/C0068213/C0068/C0069/C0047/C0083/C0083/C0084213 /C0045/C0049/C0053/C0047/C0050/C0053 /C0086 /C0083/C0068215/C0068/C0069/C0047/C0083/C0083/C0084215 /C0045/C0050/C0053/C0047/C0051/C0048 /C0086 /C0071/C0097/C0116/C0101/C0262/C0083/C0117/C0098/C0115/C0116/C0114/C0097/C0116/C0101 /C0086/C0111/C0108/C0116/C0097/C0103/C0101/C0097/C0083/C0068211/C0068/C0069/C0047/C0083/C0083/C0084211 /C0045/C0048/C0046/C0051/C0047/C0050/C0053 /C0086/C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0083/C0068213/C0068/C0069/C0047/C0083/C0083/C0084213 /C0045/C0048/C0046/C0051/C0047/C0050/C0053 /C0086/C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0083/C0068215/C0068/C0069/C0047/C0083/C0083/C0084215 /C0045/C0048/C0046/C0051/C0047/C0051/C0048 /C0086/C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0068/C0114/C0097/C0105/C0110/C0262/C0083/C0111/C0117/C0114/C0099/C0101 /C0086/C0111/C0108/C0116/C0097/C0103/C0101 /C0083/C0068211/C0068/C0069/C0047/C0083/C0083/C0084211 /C0051/C0048 /C0086/C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0083/C0068213/C0068/C0069/C0047/C0083/C0083/C0084213 /C0049/C0048 /C0086/C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0083/C0068215/C0068/C0069/C0047/C0083/C0083/C0084215 /C0050/C0048 /C0086/C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0083/C0111/C0117/C0114/C0099/C0101/C0262/C0068/C0114/C0097/C0105/C0110 /C0086/C0111/C0108/C0116/C0097/C0103/C0101 /C0083/C0068211/C0068/C0069/C0047/C0083/C0083/C0084211 /C0049/C0048 /C0086/C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0083/C0068213/C0068/C0069/C0047/C0083/C0083/C0084213 /C0049/C0048 /C0086/C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0083/C0068215/C0068/C0069/C0047/C0083/C0083/C0084215 /C0050/C0048 /C0086/C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0068/C0114/C0097/C0105/C0110/C0262/C0083/C0117/C0098/C0115/C0116/C0114/C0097/C0116/C0101 /C0086/C0111/C0108/C0116/C0097/C0103/C0101 /C0083/C0068211/C0068/C0069/C0047/C0083/C0083/C0084211 /C0051/C0048 /C0086/C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0083/C0068213/C0068/C0069/C0047/C0083/C0083/C0084213 /C0049/C0053 /C0086/C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0083/C0068215/C0068/C0069/C0047/C0083/C0083/C0084215 /C0050/C0053 /C0086/C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0083/C0111/C0117/C0114/C0099/C0101/C0262/C0083/C0117/C0098/C0115/C0116/C0114/C0097/C0116/C0101 /C0086/C0111/C0108/C0116/C0097/C0103/C0101 /C0083/C0068211/C0068/C0069/C0047/C0083/C0083/C0084211 15/C0086/C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0083/C0068213/C0068/C0069/C0047/C0083/C0083/C0084213 /C0049/C0053 /C0086/C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0083/C0068215/C0068/C0069/C0047/C0083/C0083/C0084215 /C0050 /C0053 /C0086/C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 /C0046 Notes: a. Derate 3 mW//C0095C above 25/C0095C Specificationsa Limits

211 Series 213 Series 215 Series

Parameter Symbol b Test Conditionsb Typ c Min Max Min Max Min Max Unit Static Drain-Source Bk d V l V (BR)DS V GS = VBS = 0 V , ID = 10 /C0109A 35 30 Breakdown V oltage V (BR)DS V GS = VBS = –5 V , ID = 10 nA 30 10 10 20 Source-Drain Breakdown V oltage V (BR)SD V GD = VBD = –5 V , IS = 10 nA 22 10 10 20 V Drain-Substrate Breakdown V oltage V (BR)DBO V GB = 0 V , ID = 10 nA , Source Open 35 15 15 /C0050/C0053 V Source-Substrate Breakdown V oltage V (BR)SBO V GB = 0 V , IS = 10 /C0109A , Drain Open 35 15 15 /C0050/C0053 Drain-Source Lk IDS(off) V GS =V BS = –5V V DS = 10 V 0.4 10 10 Leakage IDS(off) V GS = V BS = –5 V V DS = 20 V 0.9 10 Source-Drain Lk ISD(off) V GD =V BD = –5V V SD = 10 V 0.5 10 10 nA Leakage ISD(off) V GD = V BD = –5 V V SD = 20 V 1 10 Gate Leakage IGBS V DB = VSB = 0 V , VGB = 30V 0.01 100 100 100 Threshold V oltage V GS(th) V DS = VGS , ID = 1 /C0109A V GS = 5 V (SD Series) 58 70 70 70 V GS = 5 V (SST Series) 60 75 75 75 Drain-Source On Resistance rDS (on) V SB = 0 V ID = /C0049/C0109 /C0065 V GS = 10 V (SD Series) 38 45 45 45 O n-Resistance rDS(on) ID = /C0049/C0109/C0065 V GS = 10 V (SST Series) 40 50 50 50 V GS = 15 V 30 V GS = 20 V 26 V GS = 25 V 24

S-51850—Rev. F, 14-Apr-97 Specificationsa Limits Parameter Symbol b Test Conditionsb Typ c Min Max Min Max Min Max Unit Dynamic Forward gfs V DS = 10 V SD Series 11 10 10 10 Forward Transconductance gfs V DS = 10 V V SB = 0 V ID =2 0m A f=1k H z SST Series 10.5 9 9 9 mSTransconductance gos ID = 20 mA, f = 1 kHz All 0.9 Gate Node Capacitance C (GS+GD+GB) 2.5 3.5 3.5 3.5 Drain Node Capacitance C (GD+DB) V DS = 10 V f=1M H z SD Series 1.1 1.5 1.5 1.5 pF Source Node Ci C (GS+SB) f = 1 MHz V GS = VBS = –15 V 3.7 5.5 5.5 5.5 pF Capacitance C (GS+SB) V GS V BS 15 V SST Series 4.2 Reverse Transfer Capacitance C rss SD Series 0.2 0.5 0.5 0.5 Switching Turn-On Time td(on) SD S i O l 0.5 1 1 1 Turn-O n Time tr SD Series Only V SB = 0 V, VIN 0 to 5 V , RG = 25 0.6 1 1 1 ns Turn-Off Time td(off) V SB = 0 V, V IN 0 to 5 V, R G = 25 V DD = 5 V , RL = 680 2 ns Turn-Off Time tf DD , L Notes: a. T A = 25/C0095C unless otherwise noted. DMCBA b. B is the body (substrate), and (BR) is breakdown. c. Typical values are for DESIGN AID ONLY , not guaranteed nor subject to production testing.

4 Siliconix

S-51850—Rev. F, 14-Apr-97 Typical Characteristics Leakage Current vs. Applied Voltage On-Resistance vs. Temperature Threshold Voltage vs. Temperature On-Resistance vs. Gate-Source Voltage Common-Source Forward Transconductance vs. Drain Current Applied V oltage (V) 02 0 ISBO IGSS (Diode) ID (off) @ V GS = VBG = –5 V IS(off) @ V GD = VBD = –5V ISBO @ V GB = 0 V , Drain Open 10 nA 1 nA 100 pA 10 pA 1 pA IS(off) Leakage 300 048 1 2 2 0 240 180 120 5 V 10 V V GS = 4 V 1 100 25/C0095C V DS = 15 V V BS = 0 V TA = 55/C0095C 125/C0095C 100 –60 60 20–20 100 140 10 V 15 V 20 V rDS(on) – Drain-Source On-Resistance ( –60 60 100 20–20 140 –5 V –1 V 0 V V GS = VDS = VTH ID = 1 /C0109A V BS = –10 V ID = 5 mA, VBS = 0 V 4 8 12 16 TA – Temperature (/C0095C) TA – Temperature (/C0095C) ID – Drain Current (mA) gfs – Forward Transconductance (mS) rDS(on) – Drain-Source On-Resistance ( V GS = 5 V Output Conductance vs. Drain Current 1.0 02 0 4 0.8 0.6 0.4 0.2 V DS = 5 V 15 V V BS = 0 V f = 1 kHz ID – Drain Current (mA) gos 81 2 1 6 – Output Conductance (mS) – Gate-Source Threshold V oltage (V)V GS(th) V SB – Body-Source V oltage (V) ID(off) 10 V –0.5 V /C0041/C0041

S-51850—Rev. F, 14-Apr-97 Typical Characteristics (Cont’d) Threshold Voltage vs. Substrate-Source Voltage Leakage Current vs. Temperature Input Admittance Forward Admittance Capacitance vs. Gate-Source Voltage Body Leakage Current vs. Drain-Body Voltage 0 –4 –20 H L V GS = VDS = VTH ID = 1 mA TA = 25/C0095C 100 25 50 75 100 125 ISBO ID(off) IS(off) IGSS (Diode) Leakage (nA) 04 2 0 V DS = 10 V , f = 1 MHz V GS = VBS Capacitance (pF) C (GS+SB) C (GS+GD+GB) C (GD+DB) C (DG) 01 2 1 6 842 0 V DB (V) ID = 13 mA 1 mA – Body LeakageIB 100 0.1 100 1000 bis gis (mS) V DS = 10 V ID = 10 mA TA = 25/C0095C 100 0.1 100 1000 (mS) V DS = 10 V ID = 10 mA TA = 25/C0095C gfs –bfs TA – Temperature (/C0095C) V GS – Gate-Source V oltage (V) f – Frequency (MHz) f – Frequency (MHz) –8 –12 –16 81 2 1 6 200 500 200 500 – Gate-Source Threshold V oltage (V)V GS(th) ID(off) @ V GS = VBS = –5 V , VDS = 10 V IS(off) @ V GD = VBD = –5 V , VSD = 10 V IGSS @ V GS = 10 V ISBO @ V SB = 10 V Drain Open 100 /C0109A 100 nA 1 nA 100 pA 1 pA 10 /C0109A 1 /C0109A 10 nA 10 pA V BS – Body-Source V oltage (V)

6 Siliconix

S-51850—Rev. F, 14-Apr-97 Typical Characteristics Reverse Admittance Output Admittance Switching Characteristics Output Characteristics 0.1 0.01 0.001 100 1000 (mS) V DS = 10 V ID = 10 mA TA = 25/C0095C brs +grg –grg 100 0.1 100 1000 (mS) V DS = 10 V ID = 10 mA TA = 25/C0095C 700 600 500 01 7 400 300 200 100 23 456 tf – Fall Time (ns) R L ( 04 2 0 4 V 3 V 2 V V BS = 0 V TA = 25/C0095C V GS = 5 V bog gog f – Frequency (MHz) f – Frequency (MHz) V DS – Drain-Source V oltage (V) – Drain Current (mA)ID 200 500 200 500 81 2 1 6 /C0041 Switching Time Test Circuit

510 R L

50% 10% 90% td(on) td(off) tr tf +5 V 0 V +V DD V IN V OUT Input pulse: td, tr < 1 ns Pulse width: 100 ns Rep rate: 1 MHz Sampling Scope tr < 360 ps R IN = 1 M C IN = 2 pF BW = 500 MHz 50%