SD2100 CALOGIC | Alldatasheet
Document overview
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Technical content
FEATURES
APPLICATIONS
- • Analog Switches
- • Amplifiers
DESCRIPTION
The SD2100/SST2100 is a depletion mode DMOS lateral FET that provides ultra high speed switching with very low capacitance. The product is available in TO-72 and surface mount SOT-143.
ORDERING INFORMATION
Part Package Temperature Range SD2100 TO-72 -55 oC to +125oC SST2100 SOT-143 -55 oC to +125oC XSD2100 Sorted Chips in Carriers -55oC to +125oC CORPORATION CONNECTION DIAGRAMS BOTTOM VIEW SOURCE DRAIN GATE SUBSTRATE TO-72 3 4 GATE (3) DRAIN (2) BODY (4) SOURCE (1) SOURCE DRAIN GATE BODY AND CASE BODY IS INTERNALLY CONNECTED TO THE CASE (TOP VIEW) CD1-2 PART MARKING (SOT-231) SST2100 D10
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted) SYMBOL PARAMETER TYP 1 MIN MAX UNIT TEST CONDITIONS STATIC V (BR)DS Drain-Source Breakdown Voltage 25 15 V V GS = VBS = -5V, ID = 1µA IGSS Gate Reverse Current ±0.05 ±1n A V GS = ±25V, VDS = VBS = 0V IDSS Saturation Drain Current 7 0.5 10 mA V DS = 10V, VGS = VBS = 0V VGS(OFF ) Gate-Source Cutoff -1.5 -2 V VDS = 10V, ID = 1µA, VBS = 0V VGS Gate-Source Voltage -0.3 -1 1 VDG = 10V VBS = 0V ID = 5mA 0.4 0 1.5 I D = 10mA rDS(ON) Drain-Source On-Resistance 120 200 Ω ID = 100µA VBS = 0V VGS = 0V 40 50 V GS = 5V DYNAMIC g fs Forward Transconductance 8000 1000 µS VDS = 10V, VGS = VBS = 0V, f = 1kHz gos Output Conductance 250 500 gfs Forward Transconductance 10000 7000 VDG = 10V, VBS = 0V, ID = 10mA, f = 1kHz gos Output Conductance 350 500 C iss Common-Source Input Capacitance 5 6 pF V DS = 10V, f = 1MHz, VGS = VBS = -5V C rss Reverse Transfer Capacitance 1 2 SWITCHING t d(ON) Turn-ON Time 0.7 ns V DD = 5V, RL = 680Ω , VIN = -4V to -2Vtr 0.4 tOFF Turn-OFF Time 5 Note1: For design aid only, not subject to production testing. ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) SYMBOL PARAMETERS/TEST CONDITIONS LIMITS UNITS VGS Gate-Source Voltage ±25 V VDS Drain-Source Voltage 25 ID Drain Current 50 mA PD Power Dissipation 300 mW Power Derating 2.4 mW/ oC TJ Operating Junction Temperature -55 to 150 oCTstg Storage Temperature -55 to 150 TL Lead Temperature (1/16" from case for 10 sec.) 300