SST202 MICROSS | Alldatasheet
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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx
FEATURES
DIRECT REPLACEMENT FOR SILICONIX SST202 LOW CUT OFF VOLTAGE VGS(off) ≤ 1.5 HIGH GAIN AV = 80 V/V ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐ 65°C to +150°C Operating Junction Temperature ‐ 55°C to +135°C Maximum Power Dissipation Continuous Power Dissipation 350mW MAXIMUM CURRENT Forward Gate Current (Note 1) 50mA MAXIMUM VOLTAGES Gate to Drain Voltage VGDS = ‐40V Gate to Source Voltage VGSS = ‐40V SST202 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐ 40 ‐‐ ‐‐ V IG = 1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage ‐ 0.8 ‐‐ ‐ 4 VDS = 15V, ID = 10nA IDSS Drain to Source Saturation Current (Note 2) 0.9 ‐‐ 4.5 mA VDS = 15V, VGS = 0V IGSS Gate Reverse Current ‐ 2 ‐‐ ‐ 100 pA VGS = ‐20V, VDS = 0V IG Gate Operating Current ‐‐ ‐ 2 ‐‐ VDG = 10V, ID = 0.1mA ID(off) Drain Cutoff Current ‐‐ 2 ‐‐ VDS = 15V, VGS = ‐5V gfs Forward Transconductance 1 ‐‐ ‐‐ mS VDS = 15V, VGS = 0V , f = 1kHz Ciss Input Capacitance ‐‐ 4.5 ‐‐ pF VDS = 15V, VGS = 0V, f = 1MHz Crss Reverse Transfer Capacitance ‐‐ 1.3 ‐‐ en Equivalent Noise Voltage ‐‐ 6 ‐‐ nV/√Hz VDS = 10V, ID = 1mA , f = 1kHz Micross Components Europe Available Packages: SST202 in SOT-23 SST202 in bare die. Please contact Micross for full package and die dimensions Note 1 ‐ Absolute maximum ratings are limiting values above which SST202 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3% Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution SST202 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix SST202 The SST202 is a high gain N-Channel JFET This n-channel JFET is optimised for high gain. The part is particularly suitable for use in low power or high impedance amplifiers. The SOT-23 package is well suited for cost sensitive applications and mass production. (See Packaging Information). SST202 Applications: Battery powered amplifiers Audio Pre-Amplifiers Infra-Red Detector Am plifiers SST202 Benefits: High Input Impedance Low Cutoff Voltage Low Noise SOT-23 (Top View)