SST111 MICROSS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
FEATURES
DIRECT REPLACEMENT FOR SILICONIX SST111 LOW GATE LEAKAGE CURRENT 5pA FAST SWITCHING t(on) ≤ 4ns ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐ 55°C to +150°C Operating Junction Temperature ‐ 55°C to +135°C Maximum Power Dissipation Continuous Power Dissipation 350mW MAXIMUM CURRENT Gate Current (Note 1) 50mA MAXIMUM VOLTAGES Gate to Drain Voltage VGDS = ‐35V Gate to Source Voltage VGSS = ‐35V SST111 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐ 35 ‐‐ ‐‐ V IG = 1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage ‐ 3 ‐‐ ‐ 10 VDS = 5V, ID = 1µA VGS(F) Gate to Source Forward Voltage ‐‐ 0.7 ‐‐ IG = 1mA, VDS = 0V IDSS Drain to Source Saturation Current (Note 2) 20 ‐‐ ‐‐ mA VDS = 15V, VGS = 0V IGSS Gate Reverse Current ‐‐ ‐ 0.005 ‐ 1 nA VGS = ‐15V, VDS = 0V IG Gate Operating Current ‐‐ ‐ 0.5 ‐‐ pA VDG = 15V, ID = 10mA ID(off) Drain Cutoff Current ‐‐ 0.005 1 nA VDS = 5V, VGS = ‐10V rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 30 Ω IG = 1mA, VDS = 0V SST111 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS gfs Forward Transconductance ‐‐ 6 ‐‐ mS VDS = 20V, ID = 1mA , f = 1kHz gos Output Conductance ‐‐ 25 ‐‐ µS rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 30 Ω VGS = 0V, ID = 0mA, f = 1kHz Ciss Input Capacitance ‐‐ 7 12 pF VDS = 0V, VGS = ‐10V, f = 1MHz Crss Reverse Transfer Capacitance ‐‐ 3 5 en Equivalent Noise Voltage ‐‐ 3 ‐‐ nV/√Hz VDG = 10V, ID = 1mA , f = 1kHz SST111 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC UNITS CONDITIONS td(on) Turn On Time 2 ns VDD = 10V VGS(H) = 0V See Switching Circuit tr Turn On Rise Time 2 td(off) Turn Off Time 6 tf Turn Off Fall Time 15 SST111 SWITCHING CIRCUIT PARAMETERS VGS(L) ‐ 12V RL 800Ω ID(on) 12mA SST111 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix SST111 This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The SOT-23 package is well suited for cost sensitive applications and mass production. (See Packaging Information). SST111 Applications: Analog Switches Commutators Cho ppers SST111 Benefits: Short Sample & Hold Aperture Time Low insertion loss Low Noise Micross Components Europe Available Packages: SST111 in SOT-23 SST111 in bare die. Please contact Micross for full package and die dimensions Note 1 ‐ Absolute maximum ratings are limiting values above which SST111 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3% Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution SWITCHING TEST CIRCUIT SOT-23 (Top View)