SSS7N60 SAMSUNG | Alldatasheet

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‘TO-220F + Lower Rosion) + Improved inductive ruggedness + Fast switching times + Rugged polysilicon gate cell structure + Lower input capacitance 6 + Extended safe operating area a) + Improved high temperature reliability C4 4 a PRODUCT SUMMARY aes7co 1S Bee eee ABSOLUTE MAXIMUM RATINGS. Chora Symbot | _ssemeo [seems [unt Dra Sauce Vag) vies [e000 Drain-Gate Vottage (Ras=1.0M0) | voor | 600 | sso |e | cone Sencar | Continuous Grain Curent To=25°C ||| [contnous Oa GureeTe=109° |e] ce [Sle PusesAvleete Enoay@) | ew [es | [ameeGuren sf a0 Total Power Dissipation at To=25 °C 42 Watts: Derate above 25°C 033 wc Operating and Storage Ty, Tst6 -55 to +150 *c Junction Temperature Range Maximum Lead Temp. for Soldering , ia 300 c Purposes, 1/8" from case for 5 seconds Notes : (1) Ts=25°C to 150°C (2) Pulse test : Pulse width< 300s, Duty Cycle<2% (G) Repetitive rating : Pulse width limited by max. junction temperature (4) L=27mH, Vad=50V, RG=25 0, Starting Ti=25°C Se PSnnsunig “ 17 = ELECTRONICS Mm 7964142 0028477 5

ELECTRICAL CHARACTERISTICS (1c=25'c uniess otherwise specified) [Symbol] Characteristic | Min] Typ | Max [Unts| Test Conditons | Bvpss | Drain-Source Breakdown Voltage SSS7NEO 600 V_ | Vose0V, lo=250HA SSS7N55_ 550 v [my [ caw-treroaverge [20 - | 45 |v | vennven mnten [ toss | Gatesouce Leakage Fowas [= | - | too | wa|veszv [toss | Gate-souce Leakage Reverse | = | - | -t00| ea | voswzv ins | ZeroGatevotage Drain Curere [= | - | 280 | A | Voorn Rating Vossov | | [= |= [roca | a | Vosso.8 Max Rating, voscou To=tas'c | [Rosen | State DrakrSouce On Resitancet| - | - | 12 | a | vasstoviasa | [a | Fomaatansconductnce [30] al - |v [vosesoviegsa | [cm | input cepecitance | = ‘| teo0] = | | | cox | OutpaCapactance |= | sto |= | pF | vos, voe-26u 1 ont | Gus | Reverse TansterCapectanco | - | rao] - | oF | [tae | Tur-OnDetayTime |= | 25 | - | ns | Voo=0.5 Boss, b=7.08, 20-8: [tv [eicotme | 5 | | ns | qnosrerevitching ties ae essential [-taen | Tun-OnDeayTime |= | @0 | | ns | independent of operating temperature ee Total Gate Charge 72 | nc | Vas=10V, ln=7.0A, Vos=0.8 Max. Rating [* |eecemremny || ||| eeetommnroeera [ae eatrsouce crane |= | 03 | = | 00 | cpt tanpwatin [as | eateorinewaericrawe | - [asa] - | oc | THERMAL RESISTANCE [symbol] Charactertics || an [Units | Romanek | Are | Junctontocase | wax| go Pw ‘Case-to-Sink TP K/W | Mounting surface flat, al eee da ee [Raa [acim [wa | Ferrin | Notes : (1) T=25°C to 150°C (2) Pulse test : Pulse width<300us, Duty Cycle<2% (@) Repetitive rating : Pulse width limited by max. junction temperature LL «am = ELECTRONICS mm 7564142 0028478 4Sb Ml

—TeVees POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS [Srmba] characte | in| Typ Max[Unts] _——_—TntContions ————*d o-oo (Body Diode) symbol showing the & (Body Diode) (3) [We | Desoroweravetepe@ | - | | 18 |v [taro mroamea id [Te [Rowse RecoveyTine |= | 0] 0 | os | ttc, rT criaeioors | Notes: Paice tote Puls with <800K8, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. junction temperature ff <> ie 1 coon bse YR j [poe ‘Slim a a a i Coot i Fa 0 a a ee 7 eee i= SH | pee pee ES ya Pave Toot an SECT or mee, ii om anEts| . tA ES Ea f Z i ‘LUTIPCA NUK WIL H Li IF tittle i ACA ESSA PCofoee LAS ll ee Pero SS es ey oe ea VaGeeeeeen aie pace Typical Saturation Characteristics Maximum Safe Operating Area ee a 5 ELECTRONICS mm 7964142 OO28479 392

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a MRR — a8 Sa fy , power I 28 bo ST tones i Ff ie orem nn Soe el | TLE ieee Th OE Beare renitameawee TT, tl ‘ okt TTI TT TTT TTT TTT Te no careneoncaso aap ow Lf EE 3 Tacle=Pa lac th ih oof LEU TET l OOM Jiu 1 jul) Maximum Etfective Transient Thermal impedance Junction. to-Case Vs. Pulse Ouration ¢ Ll [beet] =? aS eof te g | ee oe | OA so) AR 2 /4enee Qf ope eH oS Ape = an A : FR Pe | J eee ee ian Typical Transconductance Vs. Drain Current ‘Typical Source—Drain Diode Forward Voltage “OTT toto PeeLOOO og Jer POCO gc Mumseepcane oe 4e Pee eee Beet Pann? ane Re) oP Cees Putt ltr T Try) & or =e Bou =a aL TTT eee eee eee eLlTTPT TTT) = (ferry) <> “ ELECTRONICS M@! 7964142 0028480 OOF

600 cess | 2 \\ eee ee a 5 von >A Sl NOL LAF PB a se | 10 a REE} a 209 a) oe IN sanee on (ESSSeCS8 .===_—==—— VO Typical Capacitance Vs. Drain te Source voltage Typical Gato Charge Vs, Gate to. Source Votage TOC TOLL ieee) 9 Cope a j Py H i FNS a Pree EEE s., f, 8 POC EEN Peto 6b ANG CeCe OCC EENG ‘Corr ON Typical Or-Resistance Vs. Drain Current Maximum rain Current Vs. Case Temperature BSCE i. SeNeee Aregeaces € 2/—+— a Poe COP] Power Us: Temperate Dering Cure 567 PSIMsUNGg Me 7964142 0026481 THO ELECTRONICS