KSK65 SAMSUNG | Alldatasheet
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‘SAMSUNG SEMICONDUCTOR INC LHE D | 79b4L42 OOOL99? 8 | KSK65 . Si N-CHANNEL JUNCTION FET 7-29-25 AF IMPEDANCE CONVERTER | * Bulit-4n Diode Between @ and S To-02s + Low NV ABSOLUTE MAXIMUM RATINGS (T,=25°C) . Drain-Source Voltage Voso 12 v : ‘ Gate-Drain Voltage Veo 12 v ‘ Drain-source Current loso 2 mA . ¥ . Drain-Gate Current too 2 mA Gaté-Source Current loso 2 mA Power Dissipation Po 20 mw Operate Temperature “Torn -10%+70 °C . Storage Temperature Tstg -20~+80 | °C : 1, Source 2, Gate 3. Drain | ELECTRICAL CHARACTERISTICS (T.,=25°C) , [ena [vena | tor eoanon [wn [ om [ me [ | Drain Current, Joss Vos=4.5V. Vos=0, 0.04 0.8 mA . Ry=2.2k041% Transconductance om Vos=4.5V, Vos=0, 300 | 600 us Re=2.2k0+1%, f= 1kHz c Noise Voltage NV Vos=4.5V, Rs=2.2k0+1%, |” 4 WwW Co=10pF, A curve Voltage Gain Gu Vos=4.5V, Rs=2.2k0+1%, -10 &B Co=10pF, Eo=100mV, . t=70Hz Voltage Gain Ge Voo=12V, Re=2.2k0 1%, -9.5 4B Co=10pF, Ea=100mV, f=70H2 Voltage Gain Gv Vos 1V, Rom 2.2k01%, -14 3B Co™ 10pF, Ea=100mV, t=70Hz lpss-Gy CLASSIFICATION Gu (dB) >=13 >-12" A1Gy1-Gy2i(6B) <3 <3 AI Gy1-Gyal(dB) <3 - & SAMSUNG SEMICONDUCTOR | 2670
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