SSS6N55

SSS6N55 SAMSUNG | Alldatasheet

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FEATURES — To220F + Lower Rosion) + Improved inductive ruggedness + Fast switching times. + Rugged polysilicon gate cell structure. + Lower input capacitance @] “ Extonded safe operating area Cy + Improved high temperature reliability a: yp SL : tl PRODUCT SUMMARY [Partnumber | vos | Rosen | to | ate 20rain aSouce [ ssseneo | eoov | 1a0 | 32a | [-sseanss | ssov | tan | 32a | ABSOLUTE MAXIMUM RATINGS [Characteristic | Symbol SSSeNE0 sssonss | unit _| Drain-Source Voltage (1) [Voss [eo | s50 |e [ Drain-Gate Voltage (Res=i.0mny) | voon_| 0 | 850 |v | | Continuous Drain GunentTo=as"c | |e [ Continuous Drain Gurent Te=tooro [wf [Drain Gurent=Puisea@ | ow fee | Gate Current - Pulsed [tw [se | Single Pulsed Avalanche Energy (8) = | Avalanche Curent | ts fa Tota! Power Dissipation at Tc=25 °C Watts Derate above 25°C. wc Operating and Storage Ty, Tst6 -85 to +150 °c Junction Temperature Range Maximum Lead Temp. for Soldering 1 “c Purposes, 1/8" from case for 5 seconds Notes : (1) Tu=25°C to 150°C (2) Pulse test : Pulse width < 300s, Duty Cycle<2% {) Repetitive rating : Pulse width limited by max. junction temperature (4) L=27mH, Vaa=50V, Ro=250,, Starting T=25°C ee an ” ELECTRONICS mm 7564142 oo28u72 T38

——_— ELECTRICAL CHARACTERISTICS (1c=25°c unless otherwise specified) | Symbol Characteristic Min | Typ | Max | Units Tost Conditions | BVoss | Drain-Source Breakdown Voltage SSS6N60 600 V | Vos=0V, 10-2500 SSSEN55 550 v | [va [one Tosiagveiage | a0) | as | ow | woe mea | [ss | cae Sovcalesgeranme | ~~) wo fm | vowev [os | cae Savcr Lage tivene [= | = [0] aa | vera Ne mecweveunour cy Lok | etn care [= [= Tom a | 08 a Rat Ws TeaS | Rosen | Static Drain-Source On sD) - 18 | a | Ves=10¥,1o=3A [oe [roma tensive @ | 30f a8 mo) 0 | vsseny ota Coss_| Output Capacitance [= | - [150 | pF | vos=0v, vos=25y f=1.0MH2 | Gus _| Reverse Transfer Capacitance = 60 | pF taon_| Turn-On Delay Time : 180 | ns | Voo-0.5 BVoss, Ib-6A, Z0-9.19 te_| Rise Time L- 200 | ns | (MOSFET switching times are essentially Ltt | Fall Time : 77 | ns [ay | totalGatechage = tsi«dC ~ |G | Ves=10V, o=6.0A, Vos-0.8 Max. Rating | (Gate-Source Plus Gate-Drain) | (Gate charge is essentially independent of Om | Gatesoucechage |= | 93] | no | operating temperature) on Gator citer Gane | - [esa] vo | THERMAL RESISTANCE Roc | Junctionto-Case [wax _ Rincs | Case-to-Sink | TYP 0.5 | KAV | Mounting surface flat, | { | ‘smooth and greased | Fux | Junctionto-Ambient { MAX Free Air Operation Notes : (1) Ty=25°C to 150°C (2) Pulse test : Pulse width< 300s, Duty Cycle<2% () Repetitive rating : Pulse width limited by max. junction temperature —_—— ELECTRONICS mm 7964142 oo28473 974

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS [oreo] charecwrinse [win] Tp | wex[unnsl Tent Condoms | Dee ey (Body Diode) ‘Symbol showing the Pulse Source Current Integral reverse [We [onto renarsietonn@) [| | 18 | v [tartare | ee Notes: (1) Tj=25°C to 150°C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse with limited by max. junction temperature “Gee 2m | | “HA cee tes i Hel itt i+ dames s ifitttttttit) | t+ PSR ee | Z| . 4 SEGREREPS98 Py a A SS LL | [yy | | ssemncerr | | A= tt sp isuerenetten | Teel POO ECAR -4 \\ NUTS Loe eee ERE Proyeee ef of fer NA POZO LAS PALE ee | sans SE Zoe oo LUT TTT TT ve mamsotones varia tn estou ac ass spas sus emt SS 560 am. ME 7964142 0028474 600 a

B32 oo Fee (ll CA os i] i zp Somer a EN Ee ! . caailiieest ccaeiinsternit 1 ore ont i oo m4 janet 3 ere om “ECCI Pat HE PEEPS RS ol shown, “. SOUARE WavE puLse DURATION seconmsy | | NO iximum Effective Transient Thermal impedance Junction to-Case Vs. Pulse Duration " Se Hee, SS ri 4 re ee 4 i A i - eed SSS ase Prete LZ Ee sope == f= ===--oo oa Zee ef a) 4 ol See neeeeee Ub ARS é | Soeeeee r] REESE | SOAR 4 TT TTT Ty Ty yy “TT TTT TT TTT one eee et E eet PC feof titer) at PTT Fy Pa i PtP Peery Hate itt ttt) Beet CLiLT TT TTT) flere P.O) 8 ee eCoocCeeeceee 9 HH j Eee Pet TEP) eee Ts ANCTION TEMPERATURE (*) ery ameton rewenanine rc) Breakdown Voltage Vs. Temperature Normalized Or-Resistance Vs. Temperature SSS ELECTRONICS Me 7964142 0026475 747 / ce

{Cee EE issecrom FT) eT soe TO pt CREE | mm : Sane” aaan ACH n=. anne NOSES 7 eed <= Aes Typleal Sapecitance Ve" Drain te Souree Voltage ‘Typical Gate Charge Ve. Gate to-Source Vokage Too ooo Pro) EPA |e ; ooo Wi E Poot AT Be poo SaeeeenNe POcetoo) op PON , Geesoceee) § Sere ; HEPES Ott Piper ip, DRAIN CURRENT (AMPERES) Ta, AMBIENT TEMPERATURE (°C) “ ‘Typical On-Resistance Vs. Drain Current Maximum Drain Current Vs. Case Temperature: ENGR : poke POON i EEG PED ooPN ors Power VS. Temperature Derating Curve a 562 Psimsunge M@ 7964142 O02847b LB ELECTRONICS