SSS3N80A SAMSUNG | Alldatasheet

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Technical content

Advanced Power MOSFET SSS3N80A ——— eee FEATURES BVjes = 800V Avalanche Rugged Technology ™ Rugged Gate Oxide Technology Rogion) = 4.8 Q Lower Input Capacitance lp = 2A

1 Improved Gate Charge

MH Extended Safe Operating Area Lower Leakage Current ; 25 pA (Max.) @ Vps = 800V TO-220F HM Low Rosin) : 3.800 2 (Typ.) y 4 Absolute Maximum Ratings 1Sai0 @ rin 5. Source [__symbol_[ Characteristic [Value ———|‘Units | | Continuous Drain Curent (Tc=25"c) | [ta Tain Curenpuied | tea | Ess [Single Pulsed Avalanche Eneey @ [as | ml | |_ te [Avalanche Curent TCC CY |__Exn [Repetitive Avalanche Eney ss @ | gs || [Tea Power Dasbaton F235 [ag Total Power Dissipation (T.=25 °C) w [me ownmgrae | T Taq | OPerting Junction and 7" "StS | Storage Temperature Range ~ 55 to +150 . | [Rete ievonme tenon | = | Purposes, 1/8* from case for 5-seconds Thermal Resistance [Sime Giana [ye] J [jar ene fo | a am ME 79b442 0040527 443 mm

Electrical Characteristics (T,=25'c unless otherwise specified) [ Symbot | Characteristic [Min.[Typ.|Max.[Units] Test Condition Drain-Source Breakdown Voltage | 00] -- | — | V_| Ves=0Vilp=250uA ABVIAT, | Breakdown Voltage Temp. Coeff. | — [1.01] - | vrc | l=250uA See Fig7 Gate Threshold Voltage [20] —- [35] V_| Voc=5V.Ip=250nA Gate-Source Leakage, Forward | ~ | — | 100] nA Gate-Source Leakage, Reverse | ~ | ~ |-100| brainto-Source Leakage Current |_| =| 25 | e Curent [= [aso] [vest =a R Static Drain-Source Vestovicoasa @* se) | On-State Resistance 48 iacnendae | 9% _| Forward Transconductance | — [1.78] — | & | Vo5=50V,1=0.85A @ : Vos"0V, Vps=25V,f =1MHz Ouput Capactance [= [oo [75] oF - See Fig 5 Reverse Transfer Capacitance | — | 23 | 30 | Tun-On Delay Ti [6 {ay _[Tum-On Delay Time [ = | 16 | 40 | Vogh400Vhyn2A, | [Rise Time | = | 26 | 60 “16a Tum-Of Oday Tine [= [46 [100] "= ]Renteo Fall Time [= [20 | 60 | erat? 09 | 2, | Total Gate Charge | — | 27 [ 35 | Vps=640V, Vog=10V, Gate Source. Char [= fsa [= | ne | yaa 00 | Qy4 | Gate-Drain(‘Miller”) Charge | — fi22[ — | See Fig 6 & Fig 12 Source-Drain Diode Ratings and Characteristics [ symbot | Characteristic [min.|Typ.[Max.[Units] Test Condition [1s _| Continuous Source Current [-|-[2] Integral reverse pn-diode | lsu _| Pulsed-Source Current @] - | ~ [12] in the MOSFET Diode Forward Vottage —@ | ~ | — [1.4] v | 1,525 c.1,=28.Ve5=0V Reverse Recovery Tme | = [30] — | a | T.-25 cy=3A | 0, | Reverse Recovery Charge [ — [as2[ — [uc | divat=100A/us ® Notes ; + Repetitive Rating ; Pulse Width Limited by Maximum Junction Temperature © #L=110mH, |45=2A, Vop=50V, Ro=27Q, Starting T,=25 °C # *loS3A, dildtS 100A/us, Voy SBVoss . Starting T,=25 °C + *Pulse Test : Pulse Width = 250s, Duty Cycle <2% ‘+ Essentially Independent of Operating Temperature Me 7964142 0040526 38T

ig Outp haracteri Fig ra fe hi teristic oH ptm Characteristics —__—_, Sa a cece z [™ tov ae E Le Fal a ae y Sul StI al | / 5 [eat |Z 3 VA

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LL A) [i A : : oes 2A 2 ne "Te tase | rae Sanne . REZ wir we we wy 4 iG e 10 Vig » Dain-Sauce Voltage MI Vg » GteSoxce Voltage MI g § »-—Fig.2_On-R nceus Drain Curren pFig-4_Source-Drain Dinde Forward Voltage, a zg” a iy B ashen nnn é ae i Xe ewov 4 aw & i : 4 2 & aga : Hy ae FA #8 $ 4 8 wt gs 2 ¢ Mas my * ertme : sg ; Diy 20v ecm pee 3 [tenes °o 3 6 > 2 wos cry cry 08 10 12 1), Dain Garet A Vp » Samce-Dain Volta MI s00 Fig 5. Capacitance vs. Drain-Sour foltag Fig 6. Gate Charge vs. Gate-Source Voltage Gu Get Ge (Sur md) S : See" Get Ga i ~ Aen . a a” mee] Gat Ge g fe ov, & T g . if TTF 4 Me Ov. El i aI . 2: f : ; é : i ents: 3 H | Ly ov ‘s i aie aad 3 : rene + 2.08 we e % a a a ) Vig + Drain-Somne Voltage M1 Q, Thal Gte Game ix] ese Mm 7964142 0040529 2lb

3, Fig 7. Breakdown Voltage vs. Temperature se Fig 8. On-Resistance vs. Temperature a2 2% 20) sesenmndesennronne denne 2 : Em a2 4 i i 33 RE EL ae eee Oe ® eos i . enses : &a if bo ottees + & 4 secede 2, BA 2 pease ost i. 0.0! i a | a T,, duction Tnpeatre [TO T,, duction Tepeture [ w 25 Zz + pti fai z ‘Link Bog 2 fa nnnnnnenninapan=ng| 29) PSSST] | a nee 5 TS 3 reese | os 2game | ws Ww we Ww os Ey B 0 as 10 Vig + Drain-Samce Voltage M T, Gee Prperatre [°C Fig 11. Thermal Response Duty Fadtde] Det, /e *” on ee pe Absee Gare: a ty t, » Square Wave Pulse Duration [sec] MH 7964142 0040530 733 mm 4

Fig 12. Gate Charge Test Circuit & Waveform * Current Regulator * Veo | Same Type st tks» as DUT Q, ny 200m {cor | toy J Vos | Vos * js Qa — © (4 DUT ana J —> t R, R, o Current Sampling (Iq) Current Sampling (I) Charge asin Resin Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout WO Vout Vin Yop (0.5 rated Vg) Ro DUT Vv, i 10V, te ta Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L 1 BVps5 Eqg= Lg? Vos , AsO TAS “Boss Voo Vary to obtain 6° BV pss | --—~~ - required peak Ip \\ hs — a a DUT Vop “ Vos (0) 10V @) ca —— —— Time esses “MM 7964142 0040531 974 mm

Fig 15. Peak Diode Recovery dvidt Test Circuit & Waveforms put | \\* 15 29 L Vg Diver Same 5 (a4) ‘DUT = Voo Vos + dv/dt controlled by® +I, controlled by Duty Factor * * Gate Pulse Width Ve | senecenenensenenenesensens (oittry DP “Gate Pulse Period 10V Ina, Body Diode Forward Current Is (pur) difdt Te Body Diode Reverse Current Vos (DUT) Body Diode Recovery dv/dt Ve Vp Body Diode Forward Voltage Drop HLECTRONICS M@™ 7964142 0040532 800 82793