SSS3N80 SAMSUNG | Alldatasheet
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T0.220F + Lower Rosion) + Improved inductive ruggedness + Fast switching times + Rugged polysilicon gate cell structure Tr PRODUCT SUMMARY [ Partnumber | Bvoss | Rosen | to | {Gate 20ran a.souce | sssaneo [| soov | son | 180 | [sssowo | 7oov | son | 14a | ABSOLUTE MAXIMUM RATINGS [eharacteiesc | Symtot | ssenso | sssauro [unk] [Brai-Sauco vonage) Woes | ooo | ee [race vonage es=1aa) | Wn | a0 on dae [continuous Oran curetToas"e «| SSC SSCSCS~*dC | [ contnuus Drain Curent To=00°6__[| lead | [oan coren-Puses@ | ew fi [ Sil Pulsed Nalactw Erg)“ es | SCSSCSCS*dC [waanctecuent | ws | tw ‘Total Power Dissipation at To=25 °C Watts Derate above 25°C wie Junction Temperature Range Maximum Lead Temp. for Soldering n Purposes, 1/8" from case for 5 seconds Notes : (1) Ts=25°C to 150°C (2) Pulse test : Pulse width <300us, Duty Cycle<2% {@) Repetitive rating : Pulse width limited by max. junction temperature (4) L=51mH, Vad= 50V, Ra=250, Starting Ts=25°C 568 M@ 7564142 0028482 987 ELECTRONICS
ELECTRICAL CHARACTERISTICS (1c=25°C unless otherwise specified) [Symboi| —__Gharacteratic | Min| Twn | Max | Unt] Test Conditions _| BVoss | Drain-Source Breakdown Voltage - ‘SSS3N80 800 V_ | Vos=0V, In=250”A SSS3N70. 700 v [osm | GateTveshoid vonage | 20 | = | 45 |v | Vosevos,ton.cma [tas | Gn Soocetaaetanwe | [| wo | [vena Tiss [one Sore getiowse [tof m [vera ba) Zao ae an Caren [- [| 20 | wa] ech Rag vey | * | [Perse ss Rag =F | ‘im | Sica Serovar] —[ [sof a [vecioumisa—| [| Rowe Tarcoeicers@ [1s] 28] - |v [weston | | i Caracas bret or] Output Capacitance fae fa Vos=0V, Vos=25V, f-1.0MH2 Crs _| Reverse Transfer Capacitance [oss] - | oF | Ee PS der aan t_| Rise Time = |_- [95 | ns | (MOSFET switching times are essentially | taom | Turn-Off Delay Time |= [_- | 150 | ns | independent of operating temperature) [a ti ers Total Gate Charge | * | nC | Vos=10¥, In=3.0A, Vos-0.8 Max. Rating {Gate-Source Plus Gate-Drain) (Gate charge is essentially independent of | | Gate-Source Chaye | 72| - | nC | operating temperature) {on caso ute chews | [2s [0 | THERMAL RESISTANCE Rinc | Junction-to-Case MAX 3.67 KW Rincs | Case-to-Sink TP 05 KAW | Mounting surface fat, [| coco pee Reus | Junction-to-Ambient ymax [625 | Kaw | Free Air Operation Notes : (1) Ts=25°C to 150°C (2) Pulse test : Pulse width <300xs, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. junction temperature 569 Psnmsungd ME 7964142 0028483 313 ml ELECTRONICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS [Symbol] Characteristic | in| Tyo | Max [Units| ‘Tet Conditons | ps [eee [=[ [ee] + meee (Body Diode) symbol showing the & Pulse Source Current. 2 integral reverse . G is ody Dlody 69 PN junction rectifier [we dete roneevaneea) | | [8 |v [aaron | [i [Reone RasmeyTne | = [S0| = [ow [emt etn arsine] Notes : (1) Ts=25°C to 150°C (2) Pulse test : Pulse width <300us, Duty Cycle< 2% (3) Repetitive rating : Pulse width limited by max. junction temperature + y- « Cp 2) seeeneee ee g {peo ey og ee | ee ot fl a) See zt Hf an Pee #7 (ia po ee iS / a A Per T TT ew 5 LT | | yA I Vin aan soonck YOURE Vex GATETOSOUROE VOLTAGE (OUT) ea Gunes nee niger suited <I Vea 7¥ |] Tlowrnation wt waea TT] Coo CCEA «fp iiisamoerne tit tl H 4 set eaeeers ee lll POAT fees ico POTS S SN PO | oe [AU TT ey LA t-I THN VETTEL ET fF] of LUTTE TTT Te 4—ft tit EL ELENGNSGEEGINEL CREE von pam yocouRCE WOLTAGE Watt) Vex oeanro.sounee voUvAaE WoLTs ace Sole teen ‘toa Sola Opesig hw Se 570 PSnmsunid mM 7564142 0028484 757 Ml ELECTRONICS
g TO ate rT i | (CoE ig epeteiineee eens ens eer eee RE ceca mememenn SSS Soe — acess itm me REC be eemeart be St foot oy a fF I 1. Frctor, Om th { oo HEE ERE CECE 2 ics onl
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° © 12 Sp souane wave puse ounanion secon Ln ene aay, pee Dao " ° ES Sea Fee OD) Bee CSP th oan aoc 4 i 2 LAT LECT TT |g eee ee SS a 2 —— i Jt a GE FEES | pereeeS Ppp BEC Zen a sae ee: eeeeneeee ‘ Wor i Ap SS Y\\ 2 jem FEE“ HI EEE ‘Typical Transcounductance Vs. Drain Current Typical Source—Drain Diode Forward Voltage See “ETT TTT TTT Ty 5 mf fit} 3 of peat 1 eel | COPCEe So sod | ge || Tey BL iter ttt) epi ae 83 [7 weet re + lL RE 10) Poet iP tt op Cpe Pw. st APE a EEE EE Pete) eee 0 ee oh $l Lt Breakdown Voltage Vs. Temperature ‘Normalized On-Resistance Vs. Temperature a ELECTRONICS MB 7964142 0028485 bob ml
TSSH] Sosa esto cbecte —“ a [TTT] 6§ (SS SeRREEE so\\T | LTT Ty } wl aE PSCCCCECOrE) propia bel Sq 3 he $s LETT TTT TT : SR 4a oA TET ETT TT Fe ae Nee? Ae aS === ae Vitti T iy ty * Yow mamTocoumce wurNce voy ** amemauena * ‘Typical Capacitance Vs. Drain to Source Voltage ‘Typical Gate Charge V8. Gate-to-Source Voltage ey Ah F A 3 {See eeey 48 Pa DSEESS cary eresenncect JA i CreK TT i he s ~-ET TT EN YT j C1 PEt ert TING [TIT TT TT erp Se 4 POON EE PLT TNT a eeNeee ECCS ‘ BeREERNG LETT TTT Bae, Power Vs. Temperature Derating Curve ELECTRONICS ME 7964142 0028485 S22 mm