SSRU3055A

SSRU3055A SAMSUNG | Alldatasheet

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Advanced Power MOSFET SSR/U3055A ee FEATURES BVpeg = 60V ™ Avalanche Rugged Technology _ Rugged Gate Oxide Technology Rosin = 0.15 2 ™ Lower Input Capacitance lp = 8A ™ Improved Gate Charge ™ Extended Safe Operating Area D-P, z M Lower Leakage Current : 10 wA(Max.) @ Vps = 60V AK TPAK WM Lower Rosin : 0.097 2 (Typ.) mY ~ 1. Gate 2. Drain 3, Source Absolute Maximum Ratings Drain Sace Vote [ Continuous Drain Current (To=25°C) | Cs Continuous Drain Current (Te=100°Q | i [7a Toran cunen Pues ol a [Ex [Sinai Pulses Avaencne Ererey | $8 | mi] [Tae Avalanche Curent a a Repetitive Avalanche Energy @ Total Power Dissipation (T4=25°C) * Total Power Dissipation (T.=25°C) 18 w Linear Derating Factor 0.14 wee Operating Junction and TT. -55 to +150 *" 5S | storage Temperature Range ° . T Maximum Lead Temp. for Soldering c t Purposes, 1/8" from case for 5-seconds Thermal Resistance Junction-to-Case es Junction-to-Ambient * | = [0 ecw * When mounted on the minimum pad size recommended (PCB Mount). OO SSSsSSssssSsssssesse ELECTRONICS: Me 7964142 OO4O4?S 442

Electrical Characteristics (T,=25°C unless otherwise specified) [‘Symbor | Charactertic [Win [Typ.|Max[Unite] Test Condition | |_BVoss [Drain-Source Breakdown Votage | 60] — | ~ | v |Vos=0Viln=250KA | [28ViaT, [Breakdown Vottage Temp. Coeff. | ~ oso] ~ | vi°C] \\pr250uA See Fig7 | | Vesom [Gate Threshold vottage | 2.0 | ~ [4.0] V | VocrSvilo=250 HA | | Gate-Source Leakage. Forward | ~ | ~ | 100] |, [te |SSesoces nese ewes [= Pa ; | = | - | 10 | Sistas ee [tom [eremenaaee [=| [owe [verona | sien) | On-State Resistance se [8s [Forward Transcondiciance | = |ea7| = | & | Vears0vinaa_ | [can [input Capacitance ‘| — | 280 [0] : : Vos=0V,Vos=25V. f =1MHz 2S Sens —— T= Fr oe [Gus [Reverse Transfer Capacitance | = | 40 | 46 | [ey [Turn-on Dey time t= | fast fy a [+ [Rise Time ———S—SC~d = pr pao] | | ton _[Tun-OF Dey Time ‘| = fav foo] [RO : SeeFig13 @© | 4 [otal Gate charge | = | 12 | a7 || Vag 48v.Vec=t0V, | 9s: [Gate-Source Chase | = [24 | ~ | nt | Ig=t00 [2s [oate-ran(=miter= Chae | - [sa], -| | seeruserig12 06 Source-Drain Diode Ratings and Characteristics [Symbot | ___Gharacterstic [win Typ. [ax units] Test Condon — | [_ [erase Sovee comet f= f= a 4 [brane roa [Veo | Bide Forward Votege _@ | - | - [15] Vv | T25°ol=0AVear Ov _| [tu _| Reverse Recovery Time | - | 65] ~ | as | t2s"c 108 [a, [Reverse Recovery chase} [ost] [ ulations @ Notes ; @ Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature @ L=1MH, 145=8A, Voo=25V, Rg=27 Q., Starting T,=25 °¢ @ lap S10, dildt S200A/S, Vop BVose.. Starting T,=25 °c @ Pulse Test : Pulse Width = 250), Duty Cycle $2% @ Essentially Independent of Operating Temperature MB 7964142 0040474 389 oe

———— SSSA on Fig 1. Output Characteristics Fig 2. Transfer Characteristics Baan. yy t FI Y 4 : Za rey ° eh Biente me wt rr ‘e wy ‘ € A 1 Vg + Drain-Samce voltage (V} Vig + Gite-Sowce Voltage MI ° Fig 3. On-Resistance vs. Drain Current S Fig 4, Source-Drain Diode Forward Voltage 7 i pee a H : weiev i Z zt 4 Ss § ¢ 28 a Qa 2 ow = : ote 7 925% “ dee 2, Ops Rita ae owl oe a a a aCe RTE RN BCeTa Jp. Drain Gare (A) Vg) SomeDain voltage Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage oy Goer q qm) = . = = Sar St 2 Ts 4 & . 8 Yer 2 * 3 so Mg ON. Lop : 3 5 ¢ LL Ba Thee 8 bead : 2 H 2 i reas: 5 968 % z So ar a a Vg + Deain-Saumce Voltage Gy» Teal Cate Change [rc] eee mm 7964142 CONOu7S 215 a

2, Fig7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature 5 ai bd ig 3 $ i } 4 E i 3 Ss; 4 : BE be | UE be 2 Malo. — aoe eee bE a 1, , duction Trpaanze [°C 7, , ection Tepeatee ( is ip Listed BR, 5 Reo poset é wk— Meee a DPT ES] 3 er 4 —— : TEEN 3. Single Pulse wl ; we 1 Ww co z B 100 cr 10 Vig » Drain-Somee voltage MM T,, Gee Tepaanre [5 Fig 11. Thermal Response [ee] 3 ; b= eA bacy ractor, [one /ej: > i iF Po erctieeny ZF ooh 10°F 10 10"? 10°? 10" 10° 108 t, , Square Wave Pulse Duration [sec] ME 7964142 OOWO47E 15) a

———— Fig 12. Gate Charge Test Circuit & Waveform “ Current Regulator ” — ( Same Type Vos sox as DUT Q ‘Vos Vos Qu ut ° (3) DUT fs Sma. _ R R, Current Sampling (1g) Current Sampling (Ip) Charge Resistor Resisor Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout VW —O Vou rz Vig Voo (05 rated Vpg) : Re i DUT v2 i i 10V. i a tts ~ tae tar Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L Eggs Ula meen Vos ms asm a bles! Vary, to obtain pan BV sg f= - required peak I,, o Is ; Re (3) C = Vp. Tpit), DUT Voo va Vos(t) 10V @ val f eS eeesSsSSses Me 7564142 OO4047? O98

Fig 15. Peak Diode Recovery dvidt Test Circuit & Waveforms pur | \\t [ ~ 1,23 L Veg Priver_| Vos + dv/dt controlled by “R,” + I, controlled by Duty Factor “D” Gate Pulse Width Ves pq Sate Pulse Width (oriver) Gate Pulse Period lov Ing » Body Diode Forward Current Is (DUT) di/at Tow Body Diode Reverse Current Vos (DUT) Body Diode Recovery dv/dt Ve Yop Body Diode Forward Voltage Drop ELECTRONICS @@ 7564142 0040478 T24 mm 82784