SSP7N60A SAMSUNG | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Advanced Power MOSFET SSP7N60A TO FEATURES BVpss = 600 V ™ Avalanche Rugged Technology R = 122 MM Rugged Gate Oxide Technology ‘OS(on) . ™ Lower Input Capacitance ID=7A HM Improved Gate Charge ™ Extended Safe Operating Area M Lower Leakage Current : 25 yA (Max.) @ Vis = 600V T0200 HM Lower Rogow : 0.977 2(Typ.) 1.Gate 2. Drain 3. Source Absolute Maximum Ratings [“Symbol_[ Characterisation] [eins Dan cone Teer [| | © [eras oar enna Sons 5 — ‘ [ta [Oran CurentPues | eid | Exe [Single Pulsed Avalancne Enewy _@ | __s35_ =) | [as [Avalanche Curent | |_ Exe [Repetitive Avalanche Eneroy Ss @ [a7 |__| Total Power Dissipation (T,=25°C) 147 w Operating Junction and Maximum Lead Temp. for Soldering ° | [een ies tonoer samen | | Thermal Resistance [—Symbot[____harectrso «typ [Mans [ Uni | [Rc | unctionto-case | | Ss |_Res | Gaseto-sink Tos [id tow L__ Fem | unction-to-ambient T= To ee

Electrical Characteristics (T,=25°C unless otherwise specified) [ Symbol | __ Characteristic | Min.|Typ.[Max.[Units]| Test Condition Drain-Source Breakdown Voltage [oo] ~ | - | v | Vog20Vto=250HA [a8ViAT, [Breakdown Vottage Temp. Coeft.| - |o.65| ~ | vFC| i-250"A _ See Fig7 Gate Theshow Votage [20] = [ao] v | Vox=svigr250uA | | Gate-Source Leakage, Forward | ~ | - | 100] Ves" 30V | Gate-Source Leakage, Reverse | — | — |-100| Prainte Source Leakage Curent | = [aso R Static Drain-Source Vege t0V 423.58 ® sien) | On-State Resistance iiaaiads [9 [Forward Transconductance | - [5.73] — | |Vos=50V.y=35A | | Css [input Capacitance | ~ | 1180] 1500] : Ves=0V,Vps=25V,f =1MHz [Con [ Output Capacitance | = | 190] 150] pr ; - See Fig 5 [Cus [Reverse Transfer Gapactance | — | 53 | & | [teen [Turn Dey Time t= 1181 48] Ly vaca | & [Rise time = ft 50] | ota Tum-Off Delay Time | = | 72 | 155] See Fi See Fig 13 @@ [4 [Fa time = 28 | 8 | | 2, | Total Gate Charge | — | 49 [ 65 | Vps=480V.Vg5=10V, | 2. | Gate-Source Charge | - [84] — | nc | i=7a ° Gate-Drain(“Miller”) Charge | - [221] — | See Fig & Fig12 © Source-Drain Diode Ratings and Characteristics [Symbol | Characteristic Min.|Typ.|Max[Units] Test Condition [ts [Continuous Source Curent | - [| - | 7 | , | iiearal revere pn-dode | lsu __| Pulsed-Source Current o| - | - [28 | in the MOSFET Diode Forward Voltage @| — | - [14] v | 1 =25°C ie 7AVes=0v _| Reverse Recovery Tine | = [ais| — | 8 | tp28°0.=7A [a, [Reverse Recovery Grave [= [38] -] 16 |owaeiooms Notes ; [e} Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature © L=20MH, I4g=7A, Voo=50V, Re=270, Starting T,=28C @ bo<7A. dildt<120AMS, Voo <BV oes. Starting T,=25°C @ Pulse Test : Pulse Width = 20,8, Duty Cycle < 2% @ Essentially Independent of Operating Temperature

———— Fig 1. Output Characteristics Fig 2. Transfer Characteristics = - ———— Zul a =, LI £ Pay E | awn cy St . 5 : 3 recov 2 ones “ 2. -50V 1 ys A mae 7S Reserves aw uw we wy « 6 @ w Vig + Drain-Soue Voltage M) Vig + Cobe-Samce Voltage] ° Fig 3. On-Resistance vs. Drain Current s Fig 4. Source-Drain Diode Forward Voltage 9 25 a _ 37 Yew: é 6, be S le a by $ Far ao ¥ 4 : a q i a : ents +7, =5°%C ” ol 2, BD ps Ril Bat: i a a a ann os oa to 2 1), DainGret A Va + Somce-Drain Voltage M Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage ey - Geet Gut Ga (Gan sd) 5 . cnare, 2 Meno z Se Sa & Mp = 2017 8 g Mai OV. LILI é Fy 3s Es § é enn $ Pa Dy sov 3 | 2esime é whem a 2 ores Rw Tes @ Fe % 0 E EJ ry E) Vg + Drain-Somce Voltage (M Q, Tal Gre Gere fc] SSeS

$ Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature 3 qi “ae wobecmend ened Samed. i = ges i Aas os a am. He ae t he & Wy e20V E coh Ele 8 ose pot haha to Po 1, dxction Trpeane (° , , Oxction Tperaame [ Fig 9. Max, Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature 2 3; akin ons ee |__| _] 2 2 a z Fi Sse el ge gd cesses sete £ 3 oth ee a ee Pagal OE Pa TEEN ThA “9 Fry Fr Fry °s > Fr ry 0 Vg + Deain-Somce Voltage MI ‘TL, Gwe Tmpranre (% Fig 11. Thermal Response —_—— 2 1-7 (pees cor ro F eee ee | we Es oe" EG alle ld t, . Square Wave Pulse Duration [sec]

Fig 12. Gate Charge Test Circuit & Waveform “Current Regulator” | V, Same Type 6s soko. as DUT . Q, ‘Vos % a Opt Ou (ni) | ° Ly pur | rf i sma [> R, R, ‘Current Sampling (I) Current Sampling ({p) Charge Resistor Resistor Fig 13. Resistive Switching Test Circuit & Waveforms R Vv. V0 at Vou ox Vin Yoo (05 rated Vips) i Ro DUT Vat lov : tees ots ta tor Fig 14, Unclamped Inductive Switching Test Circuit & Waveforms L Exs= bo Lihas? Noss ‘L = 7 Ly Lays? mre Vos rt 2S Boss Vo Vary t, to obtain cen BVpss mo required peak Ty \\Lo lis est ~_— va Ro (413) C Vo Ip)” DUT Voo “4 Vos (t) lov @) me — eee

Fig 15. Peak Diode Recovery dvidt Test Circuit & Waveforms pur ft (4) Vos ls CF L Dri Vo river _| Same Ty . (in) car Vow Vos + dv/dt controlled by “Rg” +1, controlled by Duty Factor “D” Gate Pulse Width Vos p= Gate Pulse Width (Driver) Gate Pulse Period 10v Ina , Body Diode Forward Current Is (DUT) di/dt Tew Body Diode Reverse Current Vos (DUT) Body Diode Recovery dv/dt Ve Yop Body Diode Forward Voltage Drop ELECTRONICS

TO-220 (1) 13.08 +020 13000 6360.00 e) 8) e 4501020 ——— S| 3] Ss & i g g 2 | a... 3 3 g LQ) 3 g | 3 2.80.00 17.90 +020 8.08 :0 30 | 20.95MAX 9.201020 88 g 2) 3] g TO-220 (2) ' 13.08 020 130.00 23.60:00 e 2 2 159107 > i g 8g g g Pe 2 2 >_> 2.80:0% 15.90:020 10,08 .030 18, 95MAX 9204020 28) 2| 38 a! |

TO-220 (3) 8.75105 130.010 ($3.60 10.10 e 2 450+020 to | g g & | _—— i | 2 2.80+010 17.90 0.20 8 9.201020 28) 2 3 3 TO-220 (4) 6.751015 1301010 @3,.60+010 ee 450020 | —t" == 8 to t 8 280-010 15.90.020 8 9.20 +020 38] 5

TO-220 (5) 13000 93.60.01 e) 9} 2 450.020 tT s| s| ¢ 8 | = 2 2 2 ) =r ——> — 3 8 ES a 2 | [yr ——> | 4 2,800.10 9.20020 TLOOMIN: 19.00 050 ‘S.0OMIN: 3.00.050 R 8 ba ¢ i BS g] 8 38) 8 3} 8 8| 8 = By slim