SSP6N60 SAMSUNG | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
+ Lower Rosion) + Improved inductive ruggedness , \\ + Fast switching times oo + Rugged polysilicon gate cell structure ee ee + Lower input capacitance Zig le i + Improved high temperature reliability 1.Gate 2. Drain 3. Source PRODUCT SUMMARY Part Number [Woe | Poses | w>_ | ssrenso | ea | ran | a | ssronss | ssov [100 | 6a ABSOLUTE MAXIMUM RATINGS Charecterii [ Simbor | ssreneo | espenss |__| Des Sure vage [wees [ooo [ssid Ors ate vata Reset) | voc [600 (| 560 —~| ee | contnwous ran GurentTox25° | [SSS SSCS | Contruous Oran CurentToni00"e [oa | Drain curent-Pused@) | ow fe | | GateCunent-Pusea ew SSSS*dC Single Pulsed Avlnche Era [‘Avauncbe Curent | ws [CSCS Total Power Dissipation at To=25 °C Watts Derate above 25°C wc Operating and Storage TT x 150 *c Junction Temperature Range cute | were |e | Maximum Lead Temp. for Soldering 1 “c L Purposes, 1/8" from case for 5 seconds Notes : (1) Ts=25°C to 150°C (2) Pulse test : Pulse width < 300, Duty Cycle<2% {8) Repetitive rating : Pulse width limited by max. junction temperature (4) L=27mH, Vad=50V, Ro=250 , Starting Ts=25°C SEE ee ELECTRONICS Mi 7964142 O02840b 2bT
ELECTRICAL CHARACTERISTICS (1c=25'c unless otherwise specified) [Smal] Garo | tn] in [wa [ot] Te Condon Drain-Source Breakdown Voltage ‘SSP6N60 V_ | Vas=0V, lo=250¢A ‘SSP6NSS 550 v [ean [exe esto ete 20} | Wi na |_tsss | Gate-Source Leakage Forward | - | | 100 | na | Vvesn20v [ess | caesoneumtagerowse || | wo] | vw Zuo Gl et On Cire [| | a0 on | Ws a eo | [Pwo on [vss ti sso | [tea [orStieDan sours Greanal [oo] | - [A [vei Roster) | Static Drain-Source On Ve6s=10V, t0=3.08. lms || (ele man en [om | woacancnce | [eo | or [ea | owe cpectnce | | 0| | or | Vesa ven [ca | ce Tans Cancince | — | wo] — | oF | tae | Tum-Ondeytine |= | a0 | - |e | voo-0.5 Bos, n=6.0A,Z0-8.10 |_& | fisetine | | 5 | — | ns | (maser switching times a essotay [ two | Tun-onDeaytime |= | 100] | | independent of operating temperature) [tt [raitime | of | os | Total Gate Charge 77 | nC | V6s=10V, 1o=6.0A, Vos=0.8 Max. Rating [a_[oxeseves Ge | | 63} omg ee [as_[ eae ban Merichape | [0a [re | THERMAL RESISTANCE [Srmbol] __characterstes || Remark [ine | arciecae | wat ch Rincs | Case-to-Sink TYP KW | Mounting surface flat =| ed ed eee [an | anion | wax | 8 Notes : (1) Ti=25°C to 150°C (2) Pulse test : Pulse width < 300s, Duty Cycle< 2% (3) Repetitive rating : Pulse width limited by max. junction temperature (4) For Ultra low *A" Rosion), device add "A" suffix to part number ELECTRONICS mE 7964142 0028407 1Tb mm
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS [mio] chrcnise [wn [| war |v Tet canons [+ [ero | | - [e+ nearness (Body Diode) ‘symbol showing the Pulse Source Current | integral everse (Boe Did) A | P-N junction rectifier [We | oats rovenwiee@ [| [a | v [ercmooave —| [i [Reweanacoy tae | = | 60 | ot [we | rate toon aan | Notes : (1) Ts=25°C to150°C (2) Pulse test : Pulse width <300us, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. junction temperature 7S SSE Cl T_ {esd Se ese if i 1] fipoe jee PE Ld 3 Pee cee Pe ee | pe Pee wa © vee ORANTO-SOURGE voLTASE WOLTS, a a 7 eee] FSR tore tie ph fe pace Seal i ‘ ELAN PO ee
5 SNR ttl
PALE} 0 ESS RRS Meee e 4 8 12 16 20 10 2 6 10 20 50 100 200 500 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Saturation Characteristics: ‘Maximum Safe Operating Ares <= i ELECTRONICS ME 7964142 0028408 O32 mm
§ feet fatty Feed esas walt ahi ono TL ELITE ET Ps oe a Hiianmeettl EF aad SROSNENAE Ti — - 001 — Ie Hl Fd tare ead Ge 1 FEY ofeach betel i tL Pa i Bee Pope oe oman eo COLE LLL LAPT (HAG in i tune wave ee Care coo PRererTern 9 PaaS pees PDA ay ane P=: S==—===2= : aa 3 Eee Eee aA f| od. HH n/4aeee oe gees enene | eee i ize PSS ee! A EEE Ht tt oH PTT it) to, DRAIN CURRENT (AMPERES) ‘Veo, SOURCE-TO-ORAIN VOLTAGE (VOLTS) Tn ant nc AIBA WOT, » LLLITIITTY “ATES [| cee] EEE pe g [ 36, 4 mec oee TECH pete eet G47] 8 eee gz°"L 22 14] an al Pete Py oP ee Pope ES BREE Tp ACTION TEMPERATURE (0) OS auncron tewenmuneca Breakdown Voltage Vs. Temperature: Normalized On-Resistance Vs. Temperature ELECTRONICS Me 7964142 0028409 779 a
sen , PTOLLIIEo FAS eo eC), JCC . Doe PCCP oe ee PWC CECE | CI 3d KEELE LO EEA
2 SSE CO BAT
° ype onamsrogounce vorrace uray © a romamecinae nc ‘Typical Capacitance Vs. Drain to Source Voltage ‘Typical Gate Charge Vs. Gate-to-Source Voltage ; DOL TPCCELL § eeezeL 177] CECE
3 Hee A pCO
PCO § Ge sco A og BA POO Ag CS PCC COs eCeeTOOOCe oo Cee eno
7 COO SeRSERRERN
~ ewan fares "ame vara cd Typical Or-Resistance Vs. Drain Current Maximum Drain Current Vs. Case Temperature: aSguEEEE PHENSEHH SEEEANEEE PULLIN ‘ eEEEERNG 20} ON LT tT eT yr Ce water rovenntone co) Power Vs. Temperature Derating Curve NMSUN Gd 496 ELECTRONICS M™ 7964142 0028410 790