SSP60N05 SAMSUNG | Alldatasheet
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+ Lower Rosin) + Improved inductive ruggedness . + Fast switching times SAY O\\ + Rugged polysilicon gate cell structure ce No + Lower input capacitance ZA oe + Extended safe operating area LF + Improved high temperature reliability 1. Gate 2. Drain 3, Source PRODUCT SUMMARY [_PartNumber | vos | fosew | to _| [_sseeonos | sov_| ora ABSOLUTE MAXIMUM RATINGS [ehareteiene | Smbot | Sepeonne | saroonos [Unt] Dra-Gate vonage RessiaMaye) [vow [0 —-[ sod | Continuous Drain Curent To=t0o"e |e | ae ae [in curent-Pusee@ ‘| ew | SSCSC@SSSS*d Ce [ cstecurent=Fud |e | | [avaircheGurent Ss Total Power Dissipation @ To=25 °C 190 Watts Derate above 25°C 1.25 wi" Operating and St Junction Temperature Range Mi Lead Temp. for Solderi laximum femp. for Soldering 1 300 c ‘Purposes, 1/8" from case for 5 seconds - Notes : (1) Ts=25°C to 175°C {2) Pulse test : Pulse width <300us, Duty Cycle<2% {@) Repetitive rating : Pulse width limited by max. junction temperature (4) L=60sH, Vad=30V, Ra=250, Starting Ti=25°C <> : m=? ECTRONICS 964142 0028396 S50 ml
ELECTRICAL CHARACTERISTICS (1c-=25'c unless otherwise specified) a RaSae Drain-Source Breakdown Voltage BVoss | SSP6ONO6 V_ | Ves=0¥ 1o=260HA SSP6ONOS v [iss | OueSowriovaetomes | - || ww] [weer [iss | Ga Sore tanape Rees || [a0 | me [vay Ps [ecient [fae ear [1 Tier [8 [Vi i oT S| [fom | Sai ban toaa oor] —[ Janis] a [iowiovbom [os | FowTenomacane@ | a [ | — | o [veosnib-sx | [ce [westwsstece | - | or] [cs oveutcasts | — [wal | oF] vo ete Giss_| Reverse Transfer Capacitance 170 oF ‘aon. | Turn-On Delay Time 20 ast ns_| Voo=25V, lo=60A, 20-600 t | Rise Time | 10 | 25 | ns | (MOSFET switching times are essentially | ton | Tun-onDeayTime |= | 45 | 60 | ns | indopendent of operating temperature) Ce [tate sf | Total Gate Charge = | 120 | nc | ve5=10¥, 10-608, Vos=0.8 Max. Rating [ae [ereonecumroee pw fa bo] THERMAL RESISTANCE Symbol] __Characteristios [aT tg [Remar | Rinvc_| Junction-to-Case MAX 0.80 KW Case-to-Sink ~~] WP 05 | KAW | Mountingsurfaceflat = | smooth, and greased (a | Room [a | se Fn oan Notes : (1) Tu=25°C to 175°C (2) Pulse test : Pulse width= 300s, Duty Cycle < 2% (3) Repetitive rating : Pulse width limited by max. junction temperature «a “ ELECTRONICS mm 79b414e 0028397 427 mo
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS [amo] chaacene [no | Mas [ Tes condo Continuous Source Current A | Modified MOSFET (Body Diode) ‘symbol showing the Pulse Source Current integral reverse Oe [a [rvereneown tne | = [ei [ne [rare rk aetan | Notes : (1) Ti=25°C to175°C (2) Pulse test : Pulse width<300ys, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. junction temperature EES OES] ff [HASSLE ee af PE | se St seneeeeee ee ee iff ae ‘ee ee } coor | Y | if [se o/s ae ee ser ms Coy [ ea pote El AN lye] st a ieee ETT) 1 Cae Is yi Se ee nn a Typical Transconductance Vs. Drain Current . Maximum Sate Operating Area a” “ ELECTRONICS ME 7964142 0028398 363
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=s========== TTT SS eHeee SSE | pao a SS SSSSea HH SSSSaoeSeaea ee wa | PSS ee * ely ree pa Seseee== ==s= eee A SY PPR © VERE EH ‘Typical Capacitance Vs. Drain to Source Voltage ‘Typical Gate Charge Vs. Gate-to-Source Voltage , PLL ToT] eee ee eee PRA SNS (OA EN Pbopeeeec ed Pe NEE Pee NY aT? en ICCC Saeeeeeen ‘Woical Gr-Resistance Ve. Brin Curent Maxum Bran Great Cae Tampere rc il i E ‘ : Power Ve. onperature Dering Curve am” a ELECTRONICS MB 7964142 0026400 641