SSO-AD-1100-TO5I ROITHNER | Alldatasheet

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Technical content

Parameters: active area 1,0 mm 2 ∅ 1130m dark current 1) (M=100) max. 6 nA Total capacitance 1) (M=100) typ.10 pF Break down UBR (at ID=2µA) typ. 160 V Temperature coefficient of UBR typ. 0,4 %/°C Spectral responsivity at 780 nm typ. 0,45 A/W Cut-off frequency (-3dB) typ. 0,35 GHz Rise time typ. 1 ns Optimum gain 40 – 60 Gain M typ. 100 "Exess Noise" factor (M=100) typ. 2,2 "Exess Noise" index (M=100) typ. 0,2 N.E.P. (M=100, 880 nm) typ. 8 * 10 -14 W/Hz½ Operating temperature Storage temperature -20 ... +70°C -60 ... +100°C 1) measurement conditions: Setup of photo current 10nA at M=1 and irradiation by a NIR-LED (880nm, 80nm bandwidth). Rise of the photo current up to 1 µA, (M=100) by internal multiplication due to an increasing bias voltage. 2) limited UBR range possible to agree Special characteristics High gain at low bias voltage Fast rise time 1130 µm diameter active area low capacitance

Maximum Ratings:

  • max. electrical power dissipation 200 mW at 22°C
  • max. optical peak value, once 400 mW for 1 s
  • max. continous optical operation I Ph (DC) ≤ 500 µA ≤ 2 mA for signal 50 µs "on" / 1 ms "out"
  • ( P electr. = Popt. * Sabs * M * UR ) Application hints:
  • Current limit is to be realized via protecting resistor or current limiting - IC inside the supply voltage.
  • Use of low noise read-out - IC.
  • For higher gain a regulation of bias voltage due to the temperature is to be realized.
  • For very small signals stray light (noise source) is to be excluded by filters in order to improve the signal-noise relation.
  • Avoid touching the window with fingers!
  • Careful cleaning with Ethyl alcohol possible.
  • Avoid use of pointed and scratching tools! Handling precautions:
  • Soldering temperature 260°C for max. 10 s. The device must be protected against solder flux vapour!
  • min. Pin - length 2mm
  • ESD - protection Only small danger for the device. Standard precautionary measures are sufficient.
  • Storage Store devices in conductive foam. SSO - AD - serie Spectral Responsivity at M=1 0,000 0,100 0,200 0,300 0,400 0,500 0,600 400 500 600 700 800 900 1000 1100 Wavelength (nm) Sabs (A/W) SSO - AD - serie Spectral Responsivity at M=100 400 500 600 700 800 900 1000 1100 Wavelength (nm) Sabs (A/W) Ctot=f(UR) 0 2 04 06 08 0 1 0 0 UR [V] Ctot [pF] AD800-TO5i Gain=f(UR/UBR) 100 1000 0,000 0,100 0,200 0,300 0,400 0,500 0,600 0,700 0,800 0,900 1,000 UR/UBR Gain (M) AD800-TO5i SSO - AD - serie quantum efficiency for M=1 0,00 0,10 0,20 0,30 0,40 0,50 0,60 0,70 0,80 0,90 1,00 400 480 560 640 720 800 880 960 1040 wavelength (nm) QE ID=f(UR/UBR) 100 1000 10000 100000 0,000 0,100 0,200 0,300 0,400 0,500 0,600 0,700 0,800 0,900 1,000 UR/UBR Id [pA] AD800-TO5i APD Bias supply voltage min. 0,1 µF, closest to APD Current limiting resistor Read-out circuit or f.e. 50Ω Load resistance Diode, protective circuit