SSM6K405TU

SSM6K405TU_14 TOSHIBA | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

TOSHIBA Field-Effect Transistor Silicon N-Ch annel MOS Type SSM6K405TU ○ High-Speed Switching Applications ○ Power Management Switch Applications

• 1.5V drive
• Low ON-resistance: R on = 307 mΩ (max) (@VGS = 1.5V) R on = 214 mΩ (max) (@VGS = 1.8V) R on = 164 mΩ (max) (@VGS = 2.5V) R on = 126 mΩ (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ± 10 V DC I D 2.0 Drain current Pulse I DP 4.0 A Drain power dissipation PD (Note 1) 500 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy l oads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2) Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit V (BR) DSS I D = 1 mA, VGS = 0 V 20 ⎯ ⎯ V Drain–source breakdown voltage V (BR) DSX I D = 1 mA, VGS = – 10 V 12 ⎯ ⎯ V Drain cutoff current IDSS V DS = 20 V, VGS = 0 V ⎯ ⎯ 1 μA Gate leakage current IGSS V GS = ± 10 V, VDS = 0 V ⎯ ⎯ ±1 μA Gate threshold voltage Vth V DS = 3 V, ID = 1 mA 0.35 ⎯ 1.0 V Forward transfer admittance ⏐Yfs⏐ V DS = 3 V, ID = 1.0 A (Note2) 2.6 5.2 ⎯ S ID = 1.0 A, VGS = 4.0 V (Note2) ⎯ 90 126 ID = 1.0 A, VGS = 2.5 V (Note2) ⎯ 115 164 ID = 0.5 A, VGS = 1.8 V (Note2) ⎯ 150 214 Drain–source ON-resistance RDS (ON) ID = 0.3 A, VGS = 1.5 V (Note2) ⎯ 185 307 mΩ Input capacitance Ciss ⎯ 195 ⎯ Output capacitance Coss ⎯ 35 ⎯ Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 29 ⎯ pF Total Gate Charge Qg ⎯ 3.4 ⎯ Gate−Source Charge Qgs ⎯ 2.3 ⎯ Gate−Drain Charge Q gd VDS = 10 V, ID= 2.0 A, VGS = 4 V ⎯ 1.1 ⎯ nC Turn-on time t on ⎯ 8.0 ⎯ Switching time Turn-off time t off VDD = 10 V, ID = 0.5 A, VGS = 0 to 2.5 V, RG = 4.7 Ω ⎯ 9.0 ⎯ ns Drain–source forward voltage VDSF I D = − 2.0 A, VGS = 0 V (Note2) ⎯ – 0.85 – 1.2 V Note 2: Pulse test Unit: mm 0.3-0.05 1.7±0.1 2.1±0.1 1.3±0.1 0.650.65 2.0±0.1 0.16-0.05 0.7±0.05 +0.1 +0.06 JEDEC ― JEITA ― TOSHIBA 2-2T1D Weight: 7.0 mg (typ.) UF6 1, 2, 5, 6 : Drain 3 : G a t e 4 : S o u r c e Start of commercial production 2007-10

Switching Time Test Circuit (a) Test Circuit (b) VIN Marking Equivalent Circuit (top view) Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. (c) VOUT VDD = 10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C VDD OUT IN 2.5 V 10 μs RG tf ton 90% 10% 2.5 V 0 V 10% 90% toff tr VDD VDS (ON) 123 6 56 KKC 1 2 3

Ambient temperature Ta (°C) Ambient temperature Ta (°C) RDS (ON) – ID Drain–source voltage V DS (V) ID – VDS Drain current I D (A) 0 0.2 0.4 0.6 1 VGS = 1.2 V 10 V Common Source Ta = 25 °C 1.8 V 2.5 V 0.8 4.0 V 1.5 V Gate–source voltage V GS ( V ) ID – VGS Drain current I D (A) 0.1 0.001 0.01 0.0001 2.0 − 25 °C Ta = 100 °C 25 °C 1.0 Vth – Ta Gate threshold voltage V th (V) 1.0 −50 0 150 0.5 50 100 Common Source VDS = 3V ID = 1 mA RDS (ON) – Ta Drain–source ON-resistance RDS (ON) ( m Ω) Common Source −50 ID = 1.0 A / VGS = 4.0 V 0 50 150 100 300 400 100 1.0 A / 2.5 V 200 0.5 A / 1.8 V 0.3 A / 1.5 V Drain–source ON-resistance RDS (ON) ( m Ω) 0 2 6 8 Gate–source voltage V GS ( V ) 200 400 RDS (ON) – VGS 300 100 − 25 °C Ta = 100 °C25 °C 500 ID =1.0A Common Source Ta = 25°C VGS = 4.0 V Drain current I D (A) Drain–source ON-resistance RDS (ON) ( m Ω) 0 1 3 42 200 400 300 100 2.5 V 1.8 V Common Source Ta = 25°C 500 1.5 V Common Source VDS = 3 V

Drain current I D (A) Forward transfer admittance ⎪Yfs⎪ (S) |Yfs| – ID 0.1 0.1 1 0.3 0.01 Common Source VDS = 3 V Ta = 25°C Drain reverse current I DR (A) Drain–source voltage V DS (V) IDR – VDS 0.1 0.001 0.01 −25 °C Ta =100 °C 25 °C –1.2 Drain–source voltage V DS (V) C – VDS Capacitance C (pF) 0.1 1 10 100 100 1000 300 500 Ciss Coss Crss Common Source Ta = 25°C f = 1 MHz VGS = 0 V Drain current I D (A) Switching time t (ns) t – ID 0.01 100 0.1 1000 1 10 toff tf ton tr Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25 °C RG = 4.7Ω Total Gate Charge Qg (nC) Dynamic Input Characteristic Gate–Source voltage V GS (V) VDD=10V 4 8 Common Source ID = 2.0 A Ta = 25°C VDD=16V 6 2 Common Source VGS = 0 V G D S IDR

Ambient temperature Ta (°C) PD – Ta Drain power dissipation PD (mW) 800 200 120 100 140 400 600 160 1000 80 60 40 20 0 -20 -40 Mounted on FR4 board Cu Pad : 645 mm2) Pulse width t w (s) rth – tw Transient thermal impedance rth (°C/W) 0.001 10000.01 0.1 1 100 100 100 Single Pulse Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm2) t = 10 s DC

RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collect ively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduc ed without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales representative.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.
• The information contained herein is pres ented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WH ATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related so ftware or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.