SSM6K32TU

Toshiba Semiconductor

Bipolar Small-Signal Transistors

Manufacturer: Toshiba Semiconductor

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SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs IGBTs Phototransistors (for Optical Sensors) 1 2010/9 SCE0004K

Bipolar Small-Signal Transistors General-Purpose Transistors (Leaded Type) Package TO-92 (SC-43)

5.1 MAX

12.7 MIN 4.7 MAX (mm) Classification VCEO (V) Max IC (A) Max hFE VCE(sat) (V) Max NPN PNP 50 0.15 70 to 700 0.25 2SC1815 −50 −0.15 70 to 400 −0.3 2SA1015 120 0.1 200 to 700 0.3 2SC2240 General-purpose −120 −0.1 200 to 700 −0.3 2SA970 50 0.15 70 to 700 0.25 2SC1815(L) −50 −0.15 70 to 400 −0.3 2SA1015(L) 50 0.15 200 to 700 0.3 2SC732TM ⎯ 30 0.5 70 to 400 0.25 2SC1959 Low noise −30 −0.5 70 to 240 −0.25 2SA562TM 80 0.3 70 to 240 0.5 2SC1627 Audio drivers −80 −0.3 70 to 240 −0.4 2SA817 30 0.8 100 to 320 0.5 2SC2120 −30 −0.8 100 to 320 −0.7 2SA950 20 2 120 to 700 0.5 2SC3266 −20 −2 120 to 400 −0.5 2SA1296 10 2 140 to 600 0.5 2SC3279 −10 −2 140 to 600 −0.5 2SA1300 10 5 700 to 2000 0.25 2SC5853 ⎯ 10 5 450 to 700 0.27 2SC5854 ⎯ 10 5 450 to 700 0.3 ⎯ ⎯ High current 80 1.2 100 to 200 0.09 2SC6132 ⎯ Darlington 40 0.3 10000 min 1.3 2SC982TM ⎯ Muting 20 0.3 200 to 1200 0.1 2SC2878 ⎯ 300 0.1 30 to 150 0.5 2SC2551 −300 −0.1 30 to 150 −0.5 2SA1091 250 0.05 50 min 1.5 2SC3333 High breakdown voltage −250 −0.05 50 min −1.5 2SA1320 High-speed switching 15 0.2 40 to 240 0.3 2SC752(G)TM ⎯ High hFE 50 0.15 600 to 3600 0.25 2SC3112 ⎯

The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 2 2010/9 SCE0004K

General-Purpose Transistors (Single) (Surface-Mount Type) CST3 fSM VESM ESM SSM 0.6 1.0 1.0 0.6 0.8 1.2 1.2 0.8 1.6 1.6 0.85 1.6 1.6 0.8 (mm) (mm) (mm) (mm) (mm) Classification VCEO (V) Max IC (mA) Max NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP 100 2SC6026CT 2SA2154CT 2SC6026 2SA2154 150 2SC6026MFV 2SA2154MFV 2SC4738F 2SA1832F 2SC4738 2SA1832 30 500 General-purpose 50 500 Low noise 120 100 12 400 2SC5376CT 2SA1955CT 2SC5376FV 2SA1955FV 2SC5376F 2SA1955F 2SC5376 2SA1955 12 500 15 800 25 800 30 800 10 2000 20 2000 20 1500 20 2500 30 3000 50 1000 50 1700 High current 50 2500 Strobe 10 5000 (3000) High breakdown voltage 80 300 High hFE 50 150 Muting 20 300 High-speed switching 15 200 High-voltage switching 200 50 250 50 High breakdown voltage 300 100 Darlington 40 300

For the PNP transistors, the minus sign (−) indicating a negative voltage is omitted.
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 3 2010/9 SCE0004K

2.1 2.0 1.25 2.1 2.0 1.7 2.8 2.9 1.6 2.5 2.9 1.5 12.7 MIN 4.7 MAX (mm) (mm) (mm) (mm) (mm) NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP 2SC4116 TTC4116FU * 2SA1586 TTA1586FU * 2SC2712 2SA1162 2SC1815 2SA1015 2SC4118 2SA1588 2SC2859 2SA1182 2SC1959 2SA562TM 2SC3325 2SA1313 2SC4117 2SA1587 2SC2713 2SA1163 2SC2240 2SA970 2SC3324 2SA1312 2SC5233 2SA1954 2SC5232 2SA1953 2SA1362 2SC3265 2SA1298 2SC4210 2SA1621 2SC2120 2SA950 2SC3279 2SA1300 2SC3266 2SA1296 2SC6133 * 2SA2214 * 2SA2215 * 2SC6134 * 2SC6135 * 2SA2195 * 2SC6100 * (2SC5766) 2SC5853 2SC5471 2SC5854 2SC6067 2SC4209 2SA1620 2SC1627 2SA817 2SC4666 2SC3295 2SC3112 2SC4213 2SC3326 2SC2878 2SC4667 2SC3437 2SC752(G)TM 2SC3138 2SA1255 2SC3333 2SA1320 2SC4497 2SA1721 2SC2551 2SA1091 2SC2532 2SC982TM *: New product 4 2010/9 SCE0004K

General-Purpose Transistors (Dual) D u a l T y p e CST6 fS6 ESV USV SMV 1.0 0.9 1.0 1.0 0.8 1.6 1.6 1.2 2.1 2.0 1.25 2.8 2.9 1.6 (mm) (mm) (mm) (mm) (mm) Classification VCEO (V) Max IC (mA) Max NPN + PNP NPN PNP NPN + PNP PNP + NPN NPN PNP NPN PNP PNP + NPN (HN2B26CT) (HN1C26FS) (HN1A26FS) 2SA1873 (▲18) ** (▲10) (▲7) (HN1B26FS) HN4B01JE 2SC4944 (▲1) 2SC4207 2SA1618 (HN2C26FS) (HN2A26FS) (▲9) (▲6) (▲2) HN4A56JU (▲2) (▲1) (▲12) (▲11) (▲4) 50 150 (100) HN4B04J 30 500 (▲3) * General -purpose 50 500 HN4C06J HN4A06J (▲2) (▲1) HN4B06J HN4C51J HN4A51J (▲3) Low noise 120 100 (▲5) (▲4) HN4C05JU 12 400 (▲2) 12 500 15 800 HN4C08J HN4A08J 25 800 (▲2) (▲1) 30 800 10 2000 High current 20 2000 Strobe 10 5000 High breakdown voltage 80 300 High hFE 50 150 Muting 20 300 High-speed switching 15 200 High-voltage switching 200 50 250 50 High breakdown voltage 300 100 Darlington 40 300

For the PNP transistors, the minus sign (−) indicating a negative voltage is omitted.
The ratings enclosed in parenthesis are for those devices whose part numbers are enclosed in parentheses.
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. ♦Internal Connections Number of Pins ▲1 ▲2 ▲3 ▲4 ▲5 ▲6 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 ♦The internal connection diagrams only show the general configurations of the circuits. 5 2010/9 SCE0004K

1.6 1.6 1.2 2.1 2.0 1.25 2.8 2.9 1.6 (mm) (mm) (mm) NPN PNP PNP + NPN NPN PNP PNP + NPN NPN PNP PNP + NPN HN1C01FE HN1C01FU HN1B01FU (▲10) HN1A01FE (▲10) HN1A01FU (▲8) HN1A01F HN1B01F HN2C01FE (▲7) HN1B04FE HN2C01FU (▲7) HN1B04FU HN1C01F (▲7) (▲8) (▲12) HN2A01FE (▲9) (▲12) HN2A01FU (▲9) (▲10) HN3A56F HN3B01F HN3C67FE (▲11) HN3C56FU (▲11) HN3B02FU (▲16) (▲13) (▲17) (▲15) (▲14) HN1B04F (▲8) HN1C07F HN1A07F (▲10) (▲7) HN3C51F HN3A51F (▲15) (▲16) HN1C05FE (▲10) HN1A02F (▲7) HN1C03FU HN1C03F (▲10) (▲10) HN3C61FU (▲15) *: New product **: Under development 6 2010/9 SCE0004K

Bias Resistor Built-in Transistors (Single, General-Purpose) VCEO(V) 20 50 Ratings IC(mA) 50 100 fSM CST3 CST6 CST3 VESM Internal Resistors (kΩ) 1.0 0.6 0.8 (mm) 0.6 1.0 (mm) 1.0 0.9 ( m m ) 0.6 1.0 ( m m ) 1.2 1.2 0.8 ( m m ) R1 R2 NPN PNP NPN PNP NPN PNP NPN + PNP NPN PNP NPN PNP 4.7 4.7 RN1101FS RN2101FS RN1101CT RN2101CT RN1961CT RN2961CT RN1101ACT RN2101ACT RN1101MFV RN2101MFV 10 10 RN1102FS RN2102FS RN1102CT RN2102CT RN1962CT RN2962CT RN1102ACT RN2102ACT RN1102MFV RN2102MFV 22 22 RN1103FS RN2103FS RN1103CT RN2103CT RN1963CT RN2963CT RN1103ACT RN2103ACT RN1103MFV RN2103MFV 47 47 RN1104FS RN2104FS RN1104CT RN2104CT RN1964CT RN2964CT RN1104ACT RN2104ACT RN1104MFV RN2104MFV 2.2 47 RN1105FS RN2105FS RN1105CT RN2105CT RN1965CT RN2965CT RN1105ACT RN2105ACT RN1105MFV RN2105MFV 4.7 47 RN1106FS RN2106FS RN1106CT RN2106CT RN1966CT RN2966CT RN49P2ACT RN1106ACT RN2106ACT RN1106MFV RN2106MFV 10 47 RN1107FS RN2107FS RN1107CT RN2107CT RN1967CT RN2967CT RN1107ACT RN2107ACT RN1107MFV RN2107MFV 22 47 RN1108FS RN2108FS RN1108CT RN2108CT RN1968CT RN2968CT RN1108ACT RN2108ACT RN1108MFV RN2108MFV 47 22 RN1109FS RN2109FS RN1109CT RN2109CT RN1969CT RN2969CT RN1109ACT RN2109ACT RN1109MFV RN2109MFV 4.7 ∞ RN1110FS RN2110FS RN1110CT RN2110CT RN1970CT RN2970CT RN1110ACT RN2110ACT RN1110MFV RN2110MFV 10 ∞ RN1111FS RN2111FS RN1111CT RN2111CT RN1971CT RN2971CT RN1111ACT RN2111ACT RN1111MFV RN2111MFV 22 ∞ RN1112FS RN2112FS RN1112CT RN2112CT RN1972CT RN2972CT RN1112ACT RN2112ACT RN1112MFV RN2112MFV 47 ∞ RN1113FS RN2113FS RN1113CT RN2113CT RN1973CT RN2973CT RN1113ACT RN2113ACT RN1113MFV RN2113MFV 1 10 RN1114MFV RN2114MFV 2.2 10 RN1115MFV RN2115MFV 4.7 10 RN1116MFV RN2116MFV 10 4.7 RN1117MFV RN2117MFV 47 10 RN1118MFV RN2118MFV 1 ⎯ RN1119MFV RN2119MFV 100 100 RN1130MFV RN2130MFV 100 ∞ RN1131MFV RN2131MFV 200 ∞ RN1132MFV RN2132MFV

For the PNP transistors, the minus sign (−) indicating a negative voltage is omitted.
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. (Single, High-Current/Muting Switch) High Current Muting VCEO(V) 12 50 20 Ratings IC(mA) 500 800 300 USM S-MINI S-MINI Internal Resistors (kΩ) 2.1 2.0 1.25 (mm) 2.5 2.9 1.5 (mm) 2.5 2.9 1.5 (mm) R1 R2 NPN PNP NPN PNP NPN 1 1 RN1321A RN2321A RN1421 RN2421 2.2 2.2 RN1322A RN2322A RN1422 RN2422 4.7 4.7 RN1323A RN2323A RN1423 RN2423 10 10 RN1324A RN2324A RN1424 RN2424 0.47 10 RN1325A RN2325A RN1425 RN2425 1 10 RN1326A RN2326A RN1426 RN2426 2.2 10 RN1327A RN2327A RN1427 RN2427 5.6 ∞ RN1441 10 ∞ RN1442 22 ∞ RN1443 2.2 ∞ RN1444
For the PNP transistors, the minus sign (−) indicating a negative voltage is omitted.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 7 2010/9 SCE0004K

1.6 1.6 0.85 (mm) 1.6 1.6 0.8 (mm) 2.1 2.0 1.25 (mm) 2.5 2.9 1.5 (mm) 12.7 MIN 4.7 MAX (mm) NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP RN1101F RN2101F RN1101 RN2101 RN1301 RN2301 RN1401 RN2401 RN1001 RN2001 RN1102F RN2102F RN1102 RN2102 RN1302 RN2302 RN1402 RN2402 RN1002 RN2002 RN1103F RN2103F RN1103 RN2103 RN1303 RN2303 RN1403 RN2403 RN1003 RN2003 RN1104F RN2104F RN1104 RN2104 RN1304 RN2304 RN1404 RN2404 RN1004 RN2004 RN1105F RN2105F RN1105 RN2105 RN1305 RN2305 RN1405 RN2405 RN1005 RN2005 RN1106F RN2106F RN1106 RN2106 RN1306 RN2306 RN1406 RN2406 RN1006 RN2006 RN1107F RN2107F RN1107 RN2107 RN1307 RN2307 RN1407 RN2407 RN1007 RN2007 RN1108F RN2108F RN1108 RN2108 RN1308 RN2308 RN1408 RN2408 RN1008 RN2008 RN1109F RN2109F RN1109 RN2109 RN1309 RN2309 RN1409 RN2409 RN1009 RN2009 RN1110F RN2110F RN1110 RN2110 RN1310 RN2310 RN1410 RN2410 RN1010 RN2010 RN1111F RN2111F RN1111 RN2111 RN1311 RN2311 RN1411 RN2411 RN1011 RN2011 RN1112F RN2112F RN1112 RN2112 RN1312 RN2312 RN1412 RN2412 RN1113F RN2113F RN1113 RN2113 RN1313 RN2313 RN1413 RN2413 RN1114F RN2114F RN1114 RN2114 RN1314 RN2314 RN1414 RN2414 RN1115F RN2115F RN1115 RN2115 RN1315 RN2315 RN1415 RN2415 RN1116F RN2116F RN1116 RN2116 RN1316 RN2316 RN1416 RN2416 RN1117F RN2117F RN1117 RN2117 RN1317 RN2317 RN1417 RN2417 RN1118F RN2118F RN1118 RN2118 RN1318 RN2318 RN1418 RN2418 RN1130F RN2130F RN1131F RN2131F RN1132F RN2132F 8 2010/9 SCE0004K

Bias Resistor Built-in Transistors (Dual, General-Purpose (5 Pin) ) Absolute Maximum Ratings Internal Resistors ESV USV VCEO IC Q1 Q2 1.6 1.6 1.2 (mm) 2.1 2.0 1.25 (mm) NPN x 2 PNP x 2 NPN + PNP NPN x 2 PNP x 2 NPN + PNP (k Ω) (k Ω) R1 R2 R1 R2 Q1 Q2 R2 R2 R1 R1 Q1 Q2 R2 R2 R1 R1 Q1 Q2 R2 R2 R1 R1 Q1 Q2 R2 R2 R1 R1 Classification (V) (mA) Common emitter Common emitter Collector-base connection Common emitter Common emitter Collector-base connection 4.7 4.7 4.7 4.7 RN1701JE RN2701JE RN1701 RN2701 10 10 10 10 RN1702JE RN2702JE RN47A3JE RN1702 RN2702 RN47A3 22 22 22 22 RN1703JE RN2703JE RN47A2JE RN1703 RN2703 RN47A2 47 47 47 47 RN1704JE RN2704JE RN1704 RN2704 2.2 47 2.2 47 RN1705JE RN2705JE RN1705 RN2705 4.7 47 4.7 47 RN1706JE RN2706JE RN1706 RN2706 10 47 10 47 RN1707JE RN2707JE RN1707 RN2707 22 47 22 47 RN1708JE RN2708JE RN1708 RN2708 47 22 47 22 RN1709JE RN2709JE RN1709 RN2709 4.7 ⎯ 4.7 ⎯ RN1710JE RN2710JE RN47A1JE RN1710 RN2710 RN47A1 10 ⎯ 10 ⎯ RN1711JE RN2711JE RN1711 RN2711 22 ⎯ 22 ⎯ RN2712JE 47 ⎯ 47 ⎯ RN2713JE 1 10 1 10 RN2714 2.2 10 2.2 10 4.7 10 4.7 10 10 4.7 10 4.7 47 10 47 10 47 47 10 47 RN47A4JE RN47A4 47 47 4.7 10 RN47A5JE RN47A5 100 100 100 100 RN47A6 50 100 10 10 47 10 RN47A7 Q1: 50 Q1: 100 Q2: 12 Q2: 100 (Lowsat) 10 10 4.7 10 RN47A7JE Q1: 50 Q1: 100 General-purpose Q2: 30 Q2: 100 (High hFE) 10 10 10 47 RN47A8JE Muting 20 300 2.2 ⎯ 2.2 ⎯

For the PNP transistors, the minus sign (−) indicating a negative voltage is omitted.
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 9 2010/9 SCE0004K

2.8 2.9 1.6 (mm) NPN x 2 PNP x 2 NPN + PNP Q1 Q2 R2 R2 R1 R1 Q1 Q2 R2 R2 R1 R1 Common emitter Common emitter Collector-base connection RN1501 RN2501 RN1502 RN2502 RN1503 RN2503 RN1504 RN2504 RN1505 RN2505 RN1506 RN2506 RN1507 RN2507 RN1508 RN2508 RN1509 RN2509 RN1510 RN2510 RN1511 RN2511 RN1544 The internal connection diagrams only show the general configurations of the circuits. 10 2010/9 SCE0004K

(Dual, General-Purpose (6 Pin) ) f S 6 1.0 1.0 0.8 Absolute Maximum Ratings Internal Resistors NPN PNP PNP + NPN Absolute Maximum Ratings Internal Resistors NPN x 2 PNP x 2 VCEO IC Q1 Q2 V CEO IC Q1 Q2 (k Ω) (k Ω) (k Ω) (k Ω) R1 R2 R1 R2 R1 R2 R1 R2 Classification (V) (mA) Q1 Q2 Q1 Q2 Q2 Q1 (V) (mA) Q1 Q2 R2 R2 Q1 Q2 R2 R2 10 10 10 10 RN1902AFS RN2902AFS RN4982AFS 10 10 10 10 RN1962FS RN2962FS 22 22 22 22 RN1903AFS RN2903AFS RN4983AFS 22 22 22 22 RN1963FS RN2963FS 47 47 47 47 RN1904AFS RN2904AFS RN4984AFS 47 47 47 47 RN1964FS RN2964FS 2.2 47 2.2 47 RN1905AFS RN2905AFS RN4985AFS 2.2 47 2.2 47 RN1965FS RN2965FS 4.7 47 4.7 47 RN1906AFS RN2906AFS RN4986AFS 4.7 47 4.7 47 RN1966FS RN2966FS 10 47 10 47 RN1907AFS RN2907AFS RN4987AFS 10 47 10 47 RN1967FS RN2967FS 22 47 22 47 RN1908AFS RN2908AFS RN4988AFS 22 47 22 47 RN1968FS RN2968FS 47 22 47 22 RN1909AFS RN2909AFS RN4989AFS 47 22 47 22 RN1969FS RN2969FS 4.7 ⎯ 4.7 ⎯ RN1910AFS RN2910AFS RN4990AFS 4.7 ⎯ 4.7 ⎯ RN1970FS RN2970FS 10 ⎯ 10 ⎯ RN1911AFS RN2911AFS RN4991AFS 10 ⎯ 10 ⎯ RN1971FS RN2971FS 22 ⎯ 22 ⎯ RN1912AFS RN2912AFS RN4992AFS 22 ⎯ 22 ⎯ RN1972FS RN2972FS 47 ⎯ 47 ⎯ RN1913AFS RN2913AFS RN4993AFS 47 ⎯ 47 ⎯ RN1973FS RN2973FS 1 10 1 10 1 10 1 10 2.2 10 2.2 10 2.2 10 2.2 10 4.7 10 4.7 10 4.7 10 4.7 10 10 4.7 10 4.7 10 4.7 10 4.7 47 10 47 10 47 10 47 10 2.2 47 22 47 2.2 47 22 47 2.2 47 47 47 2.2 47 47 47 22 22 10 10 22 22 10 10 10 10 10 ⎯ 10 10 10 ⎯ General -purpose 50 80 47 47 4.7 47 20 50 47 47 4.7 47 10 ⎯ 10 ⎯ 10 ⎯ 10 ⎯ General -purpose (Hiβ) (−30) 100 22 ⎯ 22 ⎯ (−30) 100 22 ⎯ 22 ⎯ Power SW 50 (−12) 100 (−500) 10 47 2.0 10 50 (−12) 100 (−500) 10 47 2.0 10

For the PNP transistors, the minus sign (−) indicating a negative voltage is omitted.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 11 2010/9 SCE0004K

(mm) NPN x 2 PNP x 2 NPN + PNP NPN + PNP NPN + PNP NPN + PNP Absolute Maximum Ratings Internal Resistors NPN + PNP VCEO IC Q1 Q2 (k Ω) (k Ω) R1 R2 R1 R2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 R2 R2 Q1 Q2 R2 R2 R1 R1 R2 R1 (V) (mA) Q1 Q2 R2 R2 R1 R1 RN1901FS RN2901FS RN4981FS 4.7 4.7 4.7 4.7 RN1902FS RN2902FS RN4982FS 10 10 10 10 RN1903FS RN2903FS RN4983FS 22 22 22 22 RN1904FS RN2904FS RN4984FS RN49J2FS RN49J7FS 47 47 47 47 RN49J2AFS RN1905FS RN2905FS RN4985FS 2.2 47 2.2 47 RN1906FS RN2906FS RN4986FS 4.7 47 4.7 47 RN1907FS RN2907FS RN4987FS 10 47 10 47 RN1908FS RN2908FS RN4988FS 22 47 22 47 RN1909FS RN2909FS RN4989FS 47 22 47 22 RN1910FS RN2910FS RN4990FS 4.7 ⎯ 4.7 ⎯ RN1911FS RN2911FS RN4991FS 10 ⎯ 10 ⎯ RN1912FS RN2912FS RN4992FS 22 ⎯ 22 ⎯ RN1913FS RN2913FS RN4993FS 47 ⎯ 47 ⎯ 1 10 1 10 2.2 10 2.2 10 4.7 10 4.7 10 10 4.7 10 4.7 47 10 47 10 2.2 47 22 47 2.2 47 47 47 22 22 10 10 RN49P1FS 10 10 10 ⎯ RN49A6FS 50 50 47 47 4.7 47 4.7 ⎯ 4.7 ⎯ 10 ⎯ 10 ⎯ (−30) 100 22 ⎯ 22 ⎯ (−12) 100 (−500) 10 47 2.0 10 The internal connection diagrams only show the general configurations of the circuits. 12 2010/9 SCE0004K

(Dual, General-Purpose (6 Pin) ) (Continued) Absolute Maximum Ratings Internal Resistors ES6 VCEO IC Q1 Q2 1.6 1.6 1.2 (mm) NPN x 2 PNP x 2 NPN x 2 PNP x 2 PNP + NPN NPN + PNP NPN + PNP (k Ω) (k Ω) R1 R2 R1 R2 Classification (V) (mA) Q1 Q2 Q1 Q2 Q1 Q2 R2 R2 Q1 Q2 R2 R2 Q1 Q2 Q1 Q2 Q1 Q2 R2 R2 4.7 4.7 4.7 4.7 RN1901FE RN2901FE RN1961FE RN2961FE RN4901FE RN4981FE 10 10 10 10 RN1902FE RN2902FE RN1962FE RN2962FE RN4902FE RN4982FE RN4962FE 22 22 22 22 RN1903FE RN2903FE RN1963FE RN2963FE RN4903FE RN4983FE 47 47 47 47 RN1904FE RN2904FE RN1964FE RN2964FE RN4904FE RN4984FE 2.2 47 2.2 47 RN1905FE RN2905FE RN1965FE RN2965FE RN4905FE RN4985FE 4.7 47 4.7 47 RN1906FE RN2906FE RN1966FE RN2966FE RN4906FE RN4986FE 10 47 10 47 RN1907FE RN2907FE RN1967FE RN2967FE RN4907FE RN4987FE 22 47 22 47 RN1908FE RN2908FE RN1968FE RN2968FE RN4908FE RN4988FE 47 22 47 22 RN1909FE RN2909FE RN1969FE RN2969FE RN4909FE RN4989FE 4.7 ⎯ 4.7 ⎯ RN1910FE RN2910FE RN1970FE RN2970FE RN4910FE RN4990FE 10 ⎯ 10 ⎯ RN1911FE RN2911FE RN1971FE RN2971FE RN4911FE RN4991FE 22 ⎯ 22 ⎯ 47 ⎯ 47 ⎯ 1 10 1 10 2.2 10 2.2 10 4.7 10 4.7 10 10 4.7 10 4.7 47 10 47 10 2.2 47 22 47 RN49A1FE 2.2 47 47 47 22 22 10 10 General -purpose 50 100 10 10 10 ⎯ 4.7 ⎯ 4.7 ⎯ RN1970HFE RN2970HFE RN4990HFE 10 ⎯ 10 ⎯ RN1971HFE RN2971HFE RN4991HFE General -purpose (Hiβ) (−30) 100 22 ⎯ 22 ⎯ RN1972HFE RN2972HFE RN4992HFE Power SW 50 (−12) 100 (−500) 10 47 2.0 10

For the PNP transistors, the minus sign (−) indicating a negative voltage is omitted. The internal connection diagrams only show the general configurations of the circui ts.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 13 2010/9 SCE0004K

2.1 2.0 1.25 (mm) NPN x 2 PNP x 2 NPN x 2 PNP x 2 PNP + NPN NPN + PNP (k Ω) (k Ω) R1 R2 R1 R2 Classification (V) (mA) Q1 Q2 Q1 Q2 Q1 Q2 R2 R2 Q1 Q2 R2 R2 Q1 Q2 Q1 Q2 4.7 4.7 4.7 4.7 RN1901 RN2901 RN1961 RN2961 RN4901 RN4981 10 10 10 10 RN1902 RN2902 RN1962 RN2962 RN4902 RN4982 22 22 22 22 RN1903 RN2903 RN1963 RN2963 RN4903 RN4983 47 47 47 47 RN1904 RN2904 RN1964 RN2964 RN4904 RN4984 2.2 47 2.2 47 RN1905 RN2905 RN1965 RN2965 RN4905 RN4985 4.7 47 4.7 47 RN1906 RN2906 RN1966 RN2966 RN4906 RN4986 10 47 10 47 RN1907 RN2907 RN1967 RN2967 RN4907 RN4987 22 47 22 47 RN1908 RN2908 RN1968 RN2968 RN4908 RN4988 47 22 47 22 RN1909 RN2909 RN1969 RN2969 RN4909 RN4989 4.7 ⎯ 4.7 ⎯ RN1910 RN2910 RN1970 RN2970 RN4910 RN4990 10 ⎯ 10 ⎯ RN1911 RN2911 RN1971 RN2971 RN4911 RN4991 22 ⎯ 22 ⎯ 47 ⎯ 47 ⎯ RN1973 1 10 1 10 2.2 10 2.2 10 RN2975 4.7 10 4.7 10 10 4.7 10 4.7 47 10 47 10 2.2 47 22 47 RN49A1 2.2 47 47 47 RN49A2 22 22 10 10 General -purpose 50 100 10 10 10 ⎯ 4.7 ⎯ 4.7 ⎯ 10 ⎯ 10 ⎯ General -purpose (Hiβ) (−30) 100 22 ⎯ 22 ⎯ Power SW 50 (−12) 100 (−500) 10 47 2.0 10 RN49A5

For the PNP transistors, the minus sign (−) indicating a negative voltage is omitted. The internal connection diagrams only show the general configurations of the circui ts.
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 14 2010/9 SCE0004K

(Dual, General-Purpose (6 Pin) ) (Continued) Absolute Maximum Ratings Internal Resistors SM6 VCEO IC Q1 Q2 2.8 2.9 1.6 (mm) NPN x 2 PNP x 2 NPN x 2 PNP + NPN (k Ω) (k Ω) R1 R2 R1 R2 Classification (V) (mA) Q1 Q2 Q1 Q2 Q1 Q2 R2 R2 Q1 Q2 4.7 4.7 4.7 4.7 RN1601 RN2601 RN4601 10 10 10 10 RN1602 RN2602 RN4602 22 22 22 22 RN1603 RN2603 RN4603 47 47 47 47 RN1604 RN2604 RN4604 2.2 47 2.2 47 RN1605 RN2605 RN4605 4.7 47 4.7 47 RN1606 RN2606 RN4606 10 47 10 47 RN1607 RN2607 RN4607 22 47 22 47 RN1608 RN2608 RN4608 47 22 47 22 RN1609 RN2609 RN4609 4.7 ⎯ 4.7 ⎯ RN1610 RN2610 RN4610 10 ⎯ 10 ⎯ RN1611 RN2611 RN4611 22 ⎯ 22 ⎯ RN4612 47 ⎯ 47 ⎯ RN1673 1 10 1 10 2.2 10 2.2 10 4.7 10 4.7 10 10 4.7 10 4.7 47 10 47 10 2.2 47 22 47 2.2 47 47 47 22 22 10 10 RN46A1 General -purpose 50 100 10 10 10 ⎯ 4.7 ⎯ 4.7 ⎯ 10 ⎯ 10 ⎯ General -purpose (Hiβ) (−30) 100 22 ⎯ 22 ⎯ Power SW 50 (−12) 100 (−500) 10 47 2.0 10

For the PNP transistors, the minus sign (−) indicating a negative voltage is omitted. The internal connection diagrams only show the general configurations of the circui ts.
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 15 2010/9 SCE0004K

Junction FETs (Leaded Type) Package TO-92 (SC-43) 12.7 MIN 4.7 MAX (mm) Classification VGDS (V) Max IG (mA) Max IDSS (mA) ⎪Yfs⎪(mS) Min Nch Pch −50 10 1.2 to 14 1.5 2SK246 50 −10 −1.2 to −14 1 2SJ103 −50 10 1.2 to 14 4 2SK117 ⎯ −50 10 1.2 to 14 5 2SK362 ⎯ −40 10 5 to 30 25 2SK363 ⎯ General-purpose −40 10 2.6 to 20 12 2SK364 −50 10 0.3 to 6.5 1.2 2SK30ATM ⎯ −40 10 2.6 to 20 ⎯ 2SK170 Low noise −40 10 2.6 to 20 25 2SK369 ⎯

The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. (Surface-Mount Type) Package S-MINI (SC-59) USM (SC-70) 2.5 2.9 1.5 (mm) 2.1 2.0 1.25 (mm) Classification VGDS (V) Max IG (mA) Max IDSS (mA) ⎪Yfs⎪(mS) Min Nch Pch Nch Pch −50 10 0.3 to 6.5 1.2 2SK208 2SK879 50 −10 −1.2 to −14 1 2SJ106 2SJ144 General-purpose −50 10 1.2 to 14 4 2SK209 ⎯ 2SK880 ⎯
The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 16 2010/9 SCE0004K

(Surface-Mount Type) (Electret Condense Microphone) Package VESM TESM3 VESM2 CST3 Characteristics VGDS (V) Max IG (mA) Max IDSS Rank (µA) ⎪Yfs⎪(mS) Min Ciss (pF) Typ. 1.2 0.8 1.2 0.5 (mm) 1.4 0.8 1.2 0.395 (mm) 1.2 0.8 1.2 0.3 (max) (mm) 0.38 0.6 1.0 0.35 (mm) A = 80 to 200 High gain Low THD Low Noise Small Ciss −20 10 B = 170 to 300 0.55 3.6 2SK3582MFV 2SK3582TK 2SK3582TV 2SK3582CT A = 140 to 240 High gain Low THD Small Ciss −20 10 B = 210 to 350 0.9 3.5 2SK3857MFV 2SK3857TK 2SK3857TV 2SK3857CT A = 140 to 240 AK = 100 to 250 B = 210 to 350 BK = 210 to 400 High gain Small Ciss −20 10 C = 320 to 500 1.35 4.0 2SK4059MFV 2SK4059TK 2SK4059TV 2SK4059CT A = 140 to 240 Very Low Noise Very Small Ciss −20 10 B = 210 to 350 0.65 1.8 TTK101MFV * TTK101TV * ⎯ ⎯

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product Junction FETs (Dual) (Surface-Mount Type) Package SMV USV 2.8 2.9 1.6 (mm) 2.1 2.0 1.25 (mm) Classification V GDS (V) I G (mA) I DSS (mA) ⎪Yfs⎪(mS) Min Nch x 2 Pch x 2 Nch x 2 Pch x 2 ♦Internal Connections General-purpose −50 10 1.2 to 14 4 2SK2145 ⎯ 2SK3320 ⎯ Q2 Q1
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. ♦The internal connection diagrams only show the general configurations of the circuits. 17 2010/9 SCE0004K

Combination Products of Different Type Devices Combination Products of Different Type Devices (5-Pin Packages (UFV, SMV), 6-Pin Packages (ES6, US6, SM6) ) Part Number Ratings 1.6 1.6 1.2 2.1 2.0 1.7 2.1 2.0 1.25 2.8 2.9 1.6 2.8 2.9 1.6 Internal Connections (mm) (mm) (mm) (mm) (mm) Component Devices Breakdown Voltage (V) Current (mA)

Features

Q1 2SA1955 V CEO −12 IC −400 PNP Low VCE(SAT), suitable for power supply switches ⎯ ⎯ HN7G01FU ⎯ ⎯ Q2 2SK1829 V DS 20 ID 50 2.5-V gate drive (Vth = 1.5 V max), Ron = 20 Ω typ. Q1 2SA1955 V CEO −12 IC −400 PNP Low VCE(SAT), suitable for power supply switches HN7G01FE ⎯ ⎯ ⎯ ⎯ Q2 SSM3K03FE VDS 20 ID 50 2.5-V gate drive (Vth = 1.3 V max), Ron = 4 Ω typ. Q1 2SA1955 V CEO −12 IC −400 PNP Low VCE(SAT), suitable for power supply switches PNP + Nch Q1 Q2 ⎯ ⎯ HN7G03FU ⎯ ⎯ Q2 SSM3K04FU VDS 20 ID 100 Internal 1-MΩ resistor (RGS) 2.5-V gate drive (Vth = 1.3 V max), Ron = 4 Ω typ. Q1 RN2310 V CEO −50 IC −100 PNP (Internal resisters), R = 4.7 kΩ ⎯ ⎯ HN7G02FU ⎯ ⎯ Q2 2SK1829 V DS 20 ID 50 2.5-V gate drive (Vth = 1.5 V max), Ron = 20 Ω typ. Q1 RN2310 V CEO −50 IC −100 PNP (Internal resisters), R = 4.7 kΩ PNP (BRT) + Nch Q1 Q2 R HN7G02FE ⎯ ⎯ ⎯ ⎯ Q2 SSM3K03FE VDS 20 ID 50 2.5-V gate drive (Vth = 1.3 V max), Ron = 4 Ω typ. Q1 2SA1955 V CEO −12 IC −400 PNP Low VCE(SAT), suitable for power supply switches PNP + NPN (BRT) Q1 Q2 R2 R1 ⎯ ⎯ HN7G04FU ⎯ ⎯ Q2 RN1307 V CEO 50 IC 100 NPN (Internal resisters), R1 = 10 kΩ, R2 = 47 kΩ Q1 RN2101 V CEO −50 IC −100 PNP (Internal resisters), R1 = 4.7 kΩ, R2 = 4.7 kΩ PNP (BRT) + Nch Q2 Q1 ⎯ ⎯ HN7G05FU ⎯ ⎯ Q2 2SK1830 V DS 20 ID 50 2.5-V gate drive (Vth = 1.5 V max), Ron = 20 Ω typ. Q1 2SA1955 V CEO −12 IC −400 PNP Low VCE(SAT), suitable for power supply switches HN7G06FE ⎯ HN7G06FU ⎯ ⎯ Q2 RN1104 V CEO 50 IC 100 NPN (Internal resisters), R1 = 47 kΩ, R2 = 47 kΩ Q1 2SA1955 V CEO −12 IC −400 PNP Low VCE(SAT), suitable for power supply switches PNP + NPN (BRT) Q1 Q2 R2 R1 HN7G08FE ⎯ ⎯ ⎯ ⎯ Q2 RN1306 V CEO 50 IC 100 NPN (Internal resisters), R1 = 4.7 kΩ, R2 = 47 kΩ Q1 2SC5376 VCEO 12 IC 400 NPN Low VCE(SAT), suitable for power supply switches NPN + NPN (BRT) Q2 Q1 R1 R2 ⎯ ⎯ HN7G07FU ⎯ ⎯ Q2 RN1115 V CEO 50 IC 100 NPN (Internal resisters), R1 = 2.2 kΩ, R2 = 10 kΩ

The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. The internal connection diagrams only show the general configurations of the circuits. 18 2010/9 SCE0004K

Combination Products of Different Type Devices (5-Pin Packages (UFV, SMV), 6-Pin Packages (ES6, US6, SM6) ) (Continued) Part Number Ratings 1.6 1.6 1.2 1.6 1.6 1.2 2.1 2.0 1.7 2.1 2.0 1.25 2.8 2.9 1.6 2.8 2.9 1.6 Internal Connections (mm) (mm) (mm) (mm) (mm) (mm) Component Devices Breakdown Voltage (V) Current (mA) (Internal resisters), R1 = 47 kΩ, R2 = 47 kΩ NPN (BRT) + Nch Q2 Q1 Q2 SSM3K15FS VDS 30 ID 100 2.5-V gate drive (Vth = 1.5 V max), Ron = 4 Ω typ.. Q1 2SC5376F VCEO 12 IC 400 NPN Low VCE(SAT), suitable for power supply switches NPN + Nch Q2 Q1 Q2 SSM3K03FE VDS 20 ID 50 2.5-V gate drive (Vth = 1.3 V max), Ron = 4 Ω typ. Q1 2SA2214 V CEO 20 IC 1500 PNP, high-current PNP + NPN (BRT) Q2 Q1 R1 R2 Q2 RN1102 V CEO 100 IC 100 NPN (Internal resisters), R1 = 10 kΩ, R2 = 10 kΩ Q1 2SC4116 VCEO 50 IC 150 General-purpose NPN transistor Common emitter NPN + NPN (BRT) Q1 Q2 Q2 RN1303 V CEO 50 IC 100 NPN (Internal resisters), R1 = 22 kΩ, R2 = 22 kΩ Q1 1SS352 V R 80 IO 100 Standard high-speed switching HN2E01F Q2 2SC4666 VCEO 50 IC 150 High-hFE-type NPN Q1 1SS352 V R 80 IO 100 Standard high-speed switching Independent small-signal diode + NPN HN2E02F Q2 2SC4116 VCEO 50 IC 150 General-purpose NPN transistor Q1 2SA1587 V CEO −120 IC −100 High breakdown voltage PNP Independent PNP + small-signal diode Q1 Q2 Q2 1SS352 V R 80 IO 100 Standard high-speed switching Q1 RN2304 V CEO −50 IC −100 PNP (Internal resisters), R1 = 47 kΩ, R2 = 47 kΩ Independent BRT (PNP) + small-signal diode Q2 Q1 R1 R2 Q2 1SS352 V R 80 IO 100 Standard high-speed switching Q1 1SS417 V R 40 IO 100 Schottky barrier diodes SBD + PNP (BRT) Q2 Q1 R1 R2 Q2 RN2104MFV VCEO −50 IC 100 PNP (Internal resisters), R1 = 47 kΩ, R2 = 47 kΩ

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product The internal connection diagrams only show the general configurations of the circuits. 19 2010/9 SCE0004K

Small-Signal MOSFETs (Single-Type) Absolute Maximum Ratings Package CST3 VESM SSM USM (SC-70) UFM S-MINI (SC-59) 0.38 0.6 1.0 0.35 1.2 1.2 0.8 1.6 1.6 0.8 2.1 2.0 1.25 2.1 2.0 1.7 2.5 2.9 1.5 Polarity VDDS (V) VGSS (V) ID (mA) (mm) (mm) (mm) (mm) (mm) (mm) 20 10 100 SSM3K04FV ★ SSM3K04FS ★ SSM3K04FU ★ 20 ±10 250 SSM3K37CT ** SSM3K37MFV * SSM3K37FS ** 20 ±10 100 SSM3K16CT SSM3K16FS SSM3K16FU 20 ±10 180 SSM3K35CT SSM3K35MFV SSM3K35FS 20 ±10 500 SSM3K36MFV SSM3K36FS SSM3K36TU 20 ±10 500 SSM3K43FS # * 30 ±20 100 SSM3K15CT SSM3K15FV SSM3K15FS SSM3K15FU SSM3K15F 30 ±20 100 SSM3K15ACT SSM3K15AMFV SSM3K15AFS SSM3K15AFU 30 ±20 100 SSM3K44MFV # * SSM3K44FS # * 30 ±20 200 2SK2009 30 ±20 400 SSM3K09FU 50 ±7 100 SSM3K17FU 60 ±20 200 SSM3K7002AFU SSM3K7002AF 60 ±20 200 SSM3K7002BFS * SSM3K7002BFU * SSM3K7002BF * N-ch 60 ±20 200 2SK1062 −20 ±8 −330 SSM3J36MFV SSM3J36FS SSM3J36TU −20 ±10 −100 SSM3J16CT SSM3J16FV SSM3J16FS SSM3J16FU −20 ±10 −100 SSM3J35CT SSM3J35MFV SSM3J35FS −30 ±20 −100 SSM3J15CT SSM3J15FV SSM3J15FS SSM3J15FU SSM3J15F −30 ±20 −200 2SJ305 −30 ±20 −200 SSM3J09FU −50 −7 −50 2SJ344 2SJ343 P-ch −60 ±20 −200 2SJ168 ★: Internal 1-MΩ resistor (RGS) #: High ESD protection

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 20 2010/9 SCE0004K

(V) Ron (Ω) Min Max Typ. Max @VGS (V) ton (ns) Typ. toff (ns) Typ. 0.7 1.3 4 12 2.5 160 190 0.6 1.1 5.2 15 1.5 70 125 0.4 1.0 5 20 1.2 115 300 0.8 1.5 4 7 2.5 50 180 1.1 1.8 0.8 1.2 4 72 68 0.9 1.5 22 40 2.5 100 40 2.0 3.5 0.6 1.0 10 14 75 −0.6 −1.1 18 45 −1.5 130 190 −0.4 −1.0 11 44 −1.2 175 251 −1.1 −1.7 14 32 −2.5 65 175 −0.8 −2.5 20 50 −4 150 130 −2.0 −3.5 1.3 2.0 −10 14 100 * : New product ** : Under development 21 2010/9 SCE0004K

Small-Signal MOSFETs (Dual Type) Absolute Maximum Ratings Package ESV ES6 USV US6 UF6 Vth (V) Ron (Ω) 1.6 1.6 1.2 1.6 1.6 1.2 2.1 2.0 1.25 2.1 2.0 1.25 2.1 2.0 1.7 Polarity VDDS (V) VGSS (V) ID (mA) (mm) (mm) (mm) (mm) (mm) Internal FETs Min Max Typ. Max GS (V) 20 10 100 SSM6N04FU ★ ▲4 SSM3K04FU x 2 0.7 1.3 4 12 2.5 20 ±10 100 SSM5N16FE ▲1 SSM6N16FE ▲1 SSM5N16FU ▲1 SSM6N16FU ▲1 SSM3K16FU x 2 0.6 1.1 5.2 15 1.5 20 ±10 180 SSM6N35FE ▲1 SSM6N35FU ▲1 SSM3K35MFV x 2 0.4 1.0 5 20 1.2 30 ±20 100 SSM5N15FE ▲1 SSM6N15FE ▲1 SSM5N15FU ▲1 SSM6N15FU ▲1 SSM3K15FU x 2 0.8 1.5 4 7 2.5 30 ±20 400 SSM6N09FU ▲1 SSM3K09FU x 2 1.1 1.8 0.8 1.2 4 50 ±7 100 SSM6N17FU ▲1 SSM3K17FU x 2 0.9 1.5 22 40 2.5 60 ±20 200 SSM6N7002AFU ▲1 SSM3K7002AFU x N-ch x 2 −20 ±10 −100 SSM5P16FE ▲2 SSM6P16FE ▲2 SSM5P16FU ▲2 SSM6P16FU ▲2 SSM3J16FU x 2 −0.6 −1.1 18 45 −1.5 −20 ±10 −100 SSM6P35FE ▲2 SSM6P35FU ▲2 SSM3J35FU x 2 −0.4 −1.0 11 44 −1.2 −20 ±12 −200 SSM5P05FU ▲2 SSM6P05FU ▲2 SSM3J05FU x 2 −0.6 −1.1 3.2 4 −2.5 −30 ±20 −200 SSM6P09FU ▲2 SSM3J09FU x 2 −1.1 −1.8 3.3 4.2 −4 P-ch x 2 −30 ±20 −100 SSM5P15FE ▲2 SSM6P15FE ▲2 SSM5P15FU ▲2 SSM6P15FU ▲2 SSM3J15FU x 2 −1.1 −1.7 14 32 −2.5 20 ±10 180 0.4 1.0 5 20 1.2 −20 ±10 −100 SSM6L35FE ▲3 SSM6L35FU ▲3 SSM3K35FU + SSM3J35FU −0.4 −1.0 11 4.4 −1.2 −20 ±8 −330 SSM6L36FE ▲3 * SSM6L36TU ▲3 * SSM3K36TU 30 ±20 400 SSM3K09FU 1.1 1.8 0.8 1.2 4 N-ch P-ch −30 ±20 −200 SSM6L09FU ▲3 SSM3J09FU −1.1 −1.8 3.3 4.2 −4 ★: Internal 1-MΩ resistor (RGS) *: New product

The products shown in bold are also manufactured in offshore fabs. **: Under development
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. ♦Internal Connections Number of Pins ▲1 ▲2 ▲3 ▲4 5-pin ESV/USV Q2 Q1 Q2 Q1 6-pin ES6/US6/UF6 Q2 Q1 Q2 Q1 Q2Q1 Q2Q1 ♦The internal connection diagrams only show the general configurations of the circuits. 22 2010/9 SCE0004K

VDSS ≤ 60 V (Power MOSFETs) (N-ch MOSFETs) RDS(ON) Max (mΩ) Package Polarity Part Number VDSS (V) VGSS (V) ID (A) PD (W) VGS = 1.5 V VGS = 1.8 V VGS = 2.5 V VGS = 4.0 V Ciss (pF) Internal FETs Internal Connections CST4 (mm) N-ch SSM4K27CT 20 ±12 0.5 0.4 ⎯ 390 260 205 174 ⎯ (4) SSM6K211FE * 20 ±10 3.2 0.5 118 82 59 47(@4.5 V) 510 ⎯ (2) SSM6K203FE 20 ±10 2.8 0.5 153 106 76 61 400 ⎯ (2) SSM6K202FE 30 ±12 2.3 0.5 ⎯ 145 101 85 270 ⎯ (2) SSM6K204FE 20 ±10 2.0 0.5 307 214 164 126 195 ⎯ (2) SSM6K208FE 30 ±12 1.9 0.5 ⎯ 296 177 133 123 ⎯ (2) SSM6K25FE 20 ±12 0.5 0.5 ⎯ 395 190 145 268 ⎯ (2) SSM6K24FE 30 ±12 0.5 0.5 ⎯ ⎯ 180 145 245 ⎯ (2) SSM6K22FE 20 ±12 1.4 0.5 ⎯ ⎯ 230 170 125 ⎯ (2) SSM6K210FE 30 ±20 1.4 0.5 ⎯ ⎯ ⎯ 371 57 ⎯ (2) SSM6K30FE 20 ±20 1.2 0.5 ⎯ ⎯ ⎯ 420 60 ⎯ (2) N-ch SSM6K31FE 20 ±20 1.2 0.5 ⎯ ⎯ ⎯ 540 36 ⎯ (2) ES6 0.55 1.6 1.6 (mm) N-ch x 2 SSM6N42FE * 20 ±10 0.8 0.15 600 450 330 240 90 ⎯ (1) SSM3K123TU 20 ±10 4.2 0.5 66 43 32 28 1010 ⎯ (3) SSM3K121TU 20 ±10 3.2 0.5 140 93 63 48 400 ⎯ (3) SSM3K104TU 20 ±12 3.0 0.5 ⎯ 110 74 56 320 ⎯ (3) SSM3K119TU 30 ±12 2.5 0.5 ⎯ 134 90 74 270 ⎯ (3) SSM3K116TU 30 ±12 2.2 0.5 ⎯ ⎯ 135 100 245 ⎯ (3) SSM3K122TU 20 ±10 2.0 0.5 304 211 161 123 195 ⎯ (3) SSM3K101TU 20 ±12 2.2 0.5 ⎯ 230 138 103 125 ⎯ (3) SSM3K127TU 30 ±12 2.0 0.5 ⎯ 286 167 123 123 ⎯ (3) SSM3K124TU 30 ±20 2.4 0.5 ⎯ ⎯ ⎯ 120 180 ⎯ (3) SSM3K105TU 30 ±20 2.1 0.5 ⎯ ⎯ ⎯ 200 102 ⎯ (3) SSM3K107TU 20 ±20 1.5 0.5 ⎯ ⎯ ⎯ 410 60 ⎯ (3) SSM3K128TU 30 ±20 1.5 0.5 ⎯ ⎯ ⎯ 360 57 ⎯ (3) UFM 0.7 2.1 2.0 (mm) N-ch SSM3K106TU 20 ±20 1.2 0.5 ⎯ ⎯ ⎯ 530 36 ⎯ (3) SSM6K403TU 20 ±10 4.2 0.5 66 43 32 28 1050 ⎯ (2) SSM6K18TU 20 ±12 4.0 0.5 ⎯ ⎯ 54 40 1100 ⎯ (2) SSM6K411TU 20 ±12 10 0.5 ⎯ ⎯ 23.8 12(@4.5 V) 450 ⎯ (2) SSM6K404TU 20 ±10 2.0 0.5 147 100 70 55 400 ⎯ (2) SSM6K405TU 20 ±20 4.4 0.5 307 214 164 126 195 ⎯ (2) SSM6K34TU 30 ±20 2.0 0.5 ⎯ ⎯ ⎯ 77 (@4.5 V) 470 ⎯ (2) SSM6K32TU # 60 ±20 2.0 0.5 ⎯ ⎯ ⎯ 440 140 ⎯ (2) N-ch SSM6K407TU 60 ±10 1.6 0.5 ⎯ ⎯ ⎯ 440 150 ⎯ (2) SSM6N39TU 20 ±12 0.8 0.5 247 190 139 119 260 ⎯ (1) SSM6N29TU 20 ±12 0.5 0.5 ⎯ 235 178 143 268 SSM3K102TU x 2 (1) SSM6N25TU 20 ±12 0.5 0.5 ⎯ 395 190 145 268 SSM6K25FE x 2 (1) SSM6N24TU 30 ±20 1.6 0.5 ⎯ ⎯ 180 145 245 SSM6K24FE x 2 (1) UF6 0.7 2.1 2.0 (mm) N-ch x 2 SSM6N40TU 30 ±12 0.5 0.5 ⎯ ⎯ ⎯ 182 180 ⎯ (1) #: High ESD protection *: New product

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. ♦Internal Connections (1) (2) (3) (4) ♦The internal connection diagrams only show the general configurations of the circuits. 23 2010/9 SCE0004K

VDSS ≤ 60 V (Power MOSFETs) (N-ch MOSFETs) (Continued) RDS(ON) Max (mΩ) Package Polarity Part Number VDSS (V) VGSS (V) ID (A) PD (W) VGS = 1.5 V VGS = 1.8 V VGS = 2.0 V VGS = 2.5 V VGS = 4 V VGS = 4.5 V VGS = 10 V Ciss (pF) Qg (nC) (typ.) Internal Connections SSM6K08FU 20 ±12 1.6 0.3 ⎯ ⎯ 210 140 105 ⎯ ⎯ 306 ⎯ (1) SSM6K06FU 20 ±12 1.1 0.3 ⎯ ⎯ ⎯ 210 160 ⎯ ⎯ 125 ⎯ (1) US6 0.9 2.1 2.0 (mm) N-ch SSM6K07FU 30 ±20 1.5 0.3 ⎯ ⎯ ⎯ ⎯ 220 ⎯ 130 102 ⎯ (1) SSM3K310T 20 ±10 5.0 0.7 66 43 ⎯ 32 28 ⎯ ⎯ 1120 14.8 (7) SSM3K309T 20 ±12 4.7 0.7 ⎯ 47 ⎯ 35 31 ⎯ ⎯ 1020 ⎯ (7) SSM3K301T 20 ±12 3.5 0.7 ⎯ 110 ⎯ 74 56 ⎯ ⎯ 320 4.8 (7) SSM3K01T 30 ±10 3.2 1.25 ⎯ ⎯ ⎯ 150 120 ⎯ ⎯ 152 ⎯ (7) SSM3K02T 30 ±10 2.5 1.25 ⎯ ⎯ ⎯ 250 200 ⎯ ⎯ 115 ⎯ (7) SSM3K316T 30 ±12 4.0 1.25 ⎯ 131 ⎯ 87 ⎯ 65 53 270 4.3 (7) SSM3K14T 30 ±20 4.0 1.25 ⎯ ⎯ ⎯ ⎯ 67 57 39 460 5 (7) SSM3K320T 30 ±20 4.2 1.4 ⎯ ⎯ ⎯ ⎯ ⎯ 77 50 190 4.6 (7) TSM 2.8 2.9 0.7 (mm) N-ch SSM3K318T * 60 ±20 2.5 0.7 ⎯ ⎯ ⎯ ⎯ ⎯ 145 107 235 7 (7) SOT-23F 2.4 2.9 0.8 (mm) N-ch SSM3K329R * 30 ±12 3.5 2 ⎯ 289 ⎯ 170 ⎯ 126 ⎯ 123 ⎯ (7) TPCL4201 20 ±12 6 1.5 ⎯ ⎯ ⎯ 52 33 31 ⎯ ⎯ 11.5 (6) TPCL4203 24 ±12 6 1.5 ⎯ ⎯ ⎯ 55 38 36 ⎯ ⎯ 10 (6) Chip LGA (mm) N-ch Dual TPCL4202 30 ±12 6 1.5 ⎯ ⎯ ⎯ 64 42 40 ⎯ ⎯ 10 (6) TPCF8003 20 ±12 7 2.5 ⎯ ⎯ ⎯ 34 ⎯ 18 ⎯ ⎯ 9.5 (2) N-ch Single TPCF8002 30 ±20 7 2.5 ⎯ ⎯ ⎯ ⎯ ⎯ 32 21 ⎯ 11.5 (2) VS-8 (mm) N-ch Dual TPCF8201 20 ±12 3 1.35 ⎯ ⎯ 100 66 ⎯ 49 ⎯ ⎯ 7.5 (3) TPC6012 20 ±12 6 2.2 ⎯ ⎯ ⎯ 38 ⎯ 20 ⎯ ⎯ 9 (1) TPC6008-H 30 ±20 5.9 2.2 ⎯ ⎯ ⎯ ⎯ ⎯ 74 60 232 4.8 (1) TPC6011 30 ±20 6 2.2 ⎯ ⎯ ⎯ ⎯ ⎯ 32 20 ⎯ 14 (1) TPC6005 30 ±12 6 2.2 ⎯ ⎯ 41 35 ⎯ 28 ⎯ ⎯ 19 (1) TPC6009-H 40 ±20 5.3 2.2 ⎯ ⎯ ⎯ ⎯ ⎯ 98 81 225 4.7 (1) VS-6 (mm) N-ch Single TPC6010-H 60 ±20 6.1 2.2 ⎯ ⎯ ⎯ ⎯ ⎯ 63 59 640 12 (1) TPCP8006 20 ±12 9.1 1.68 ⎯ ⎯ ⎯ 13.7 ⎯ 10 ⎯ ⎯ 22 (4) TPCP8008-H 30 ±20 8 1.68 ⎯ ⎯ ⎯ ⎯ ⎯ 23 20 ⎯ 14.7 (4) TPCP8004 30 ±20 8.3 1.68 ⎯ ⎯ ⎯ ⎯ ⎯ 14 8.5 ⎯ 26 (4) TPCP8005-H 30 ±20 11 1.68 ⎯ ⎯ ⎯ ⎯ ⎯ 15.7 12.9 ⎯ 20 (4) N-ch Single TPCP8007-H 60 ±20 5 1.68 ⎯ ⎯ ⎯ ⎯ ⎯ 64 57 ⎯ 11 (4) TPCP8201 30 ±20 4.2 1.48 ⎯ ⎯ ⎯ ⎯ ⎯ 77 50 ⎯ 10 (3) TPCP8204 30 ±20 4.2 1.48 ⎯ ⎯ ⎯ ⎯ ⎯ 77 50 190 4.6 (3) PS-8 (mm) N-ch Dual TPCP8203 40 ±20 4.7 1.48 ⎯ ⎯ ⎯ ⎯ ⎯ 60 40 ⎯ 16 (3)

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product ♦Internal Connections 6 4 1 2 3 8 6 1 2 3 7 5 12 3 7 5 123 7 5 Note: Some MOSFETs do not have a Zener diode between gate and source. ♦The internal connection diagrams only show the general configurations of the circuits. 24 2010/9 SCE0004K

RDS(ON) Max (mΩ) Package Polarity Part Number V DSS (V) VGSS (V) ID (A) PD (W) VGS = 2.0 V VGS = 2.5 V VGS = 4 V VGS = 4.5 V VGS = 10 V Qg (nC) (typ.) Internal Connections TPCC8061-H 30 ±20 8 15 ⎯ ⎯ ⎯ 29 26 11 (2) TPCC8003-H 30 ±20 13 22 ⎯ ⎯ ⎯ 19.3 16.9 17 (2) TPCC8064-H 30 ±20 19 30 ⎯ ⎯ ⎯ 10.6 8.2 23 (2) TPCC8006-H 30 ±20 22 27 ⎯ ⎯ ⎯ 9.3 8 27 (2) TPCC8001-H 30 ±20 22 30 ⎯ ⎯ ⎯ 10.6 8.3 27 (2) TPCC8002-H 30 ±20 22 30 ⎯ ⎯ ⎯ 10.6 8.3 27 (2) TPCC8005-H 30 ±20 26 30 ⎯ ⎯ ⎯ 7.4 6.4 35 (2) TPCC8007 20 ±12 27 30 ⎯ 8.7 ⎯ 4.6 ⎯ 26 (2) TPCC8008 30 ±25 25 30 ⎯ ⎯ ⎯ 12.8 6.8 30 (2) TSON Advance (mm) N-ch Single TPCC8009 30 ±20 24 27 ⎯ ⎯ ⎯ ⎯ 7 26 (2) TPC8061-H 30 ±20 8 1.9 ⎯ ⎯ ⎯ 30 25 11 (2) TPC8025 30 ±20 11 1.9 ⎯ ⎯ ⎯ 14.5 9 26 (2) TPC8030 30 ±25 11 1.9 ⎯ ⎯ ⎯ 17 9 24 (2) TPC8031-H 30 ±20 11 1.9 ⎯ ⎯ ⎯ 16.1 13.3 21 (2) TPC8037-H 30 ±20 12 1.9 ⎯ ⎯ ⎯ 13.9 11.4 21 (2) TPC8038-H 30 ±20 12 1.9 ⎯ ⎯ ⎯ 13.9 11.4 21 (2) TPC8026 30 ±20 13 1.9 ⎯ ⎯ ⎯ 10 6.6 42 (2) TPC8040-H 30 ±20 13 1.9 ⎯ ⎯ ⎯ 11.1 9.7 24 (2) TPC8041 30 ±20 13 1.9 ⎯ ⎯ ⎯ 13.5 7 27 (2) TPC8032-H 30 ±20 15 1.9 ⎯ ⎯ ⎯ 8.6 6.5 33 (2) TPC8063-H 30 ±20 17 1.9 ⎯ ⎯ ⎯ 8.9 7 27 (2) TPC8033-H 30 ±20 17 1.9 ⎯ ⎯ ⎯ 7.2 5.3 42 (2) TPC8039-H 30 ±20 17 1.9 ⎯ ⎯ ⎯ 6.9 6 36 (2) TPC8062-H 30 ±20 18 1.9 ⎯ ⎯ ⎯ 7.3 5.8 34 (2) TPC8027 30 ±20 18 1.9 ⎯ ⎯ ⎯ 5.5 2.7 113 (2) TPC8028 30 ±20 18 1.9 ⎯ ⎯ ⎯ 8 4.3 45 (2) TPC8029 30 ±20 18 1.9 ⎯ ⎯ ⎯ 7 3.8 49 (2) TPC8035-H 30 ±20 18 1.9 ⎯ ⎯ ⎯ 3.6 3.2 82 (2) TPC8036-H 30 ±20 18 1.9 ⎯ ⎯ ⎯ 5.1 4.5 49 (2) TPC8042 30 ±20 18 1.9 ⎯ ⎯ ⎯ 6.5 3.4 56 (2) TPC8060-H 30 ±20 18 1.9 ⎯ ⎯ ⎯ 4.2 3.7 65 (2) TPC8034-H 30 ±20 18 1.9 ⎯ ⎯ ⎯ 4.5 3.5 68 (2) TPC8022-H 40 ±20 7.5 1.9 ⎯ ⎯ ⎯ 3.5 2.7 11 (2) TPC8052-H 40 ±20 12 1.9 ⎯ ⎯ ⎯ 13.3 11.5 25 (2) TPC8047-H 40 ±20 16 1.9 ⎯ ⎯ ⎯ 8.8 7.5 43 (2) TPC8046-H 40 ±20 18 1.9 ⎯ ⎯ ⎯ 6.6 5.7 57 (2) TPC8045-H 40 ±20 18 1.9 ⎯ ⎯ ⎯ 4.4 3.9 90 (2) TPC8053-H 60 ±20 9 1.9 ⎯ ⎯ ⎯ 24.2 22.5 25 (2) TPC8050-H 60 ±20 11 1.9 ⎯ ⎯ ⎯ 15.5 14.5 41 (2) TPC8049-H 60 ±20 13 1.9 ⎯ ⎯ ⎯ 11.5 10.7 56 (2) SOP-8 (mm) N-ch Single TPC8048-H 60 ±20 16 1.9 ⎯ ⎯ ⎯ 7.4 6.9 87 (2) ◎: Common-drain type

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. ♦Internal Connections (1) (2) (3) (4) 8 6 1 2 3 7 5 8 6 1 2 3 7 5 5 6 7 8 1 2 3 4 5678 1234 Note: Some MOSFETs do not have a Zener diode between gate and source. ♦The internal connection diagrams only show the general configurations of the circuits. 25 2010/9 SCE0004K

VDSS ≤ 60 V (Power MOSFETs) (N-ch MOSFETs) (Continued) RDS(ON) Max (mΩ) Package Polarity Part Number V DSS (V) VGSS (V) ID (A) PD (W) VGS = 2.0 V VGS = 2.5 V VGS = 4 V VGS = 4.5 V VGS = 10 V Qg (nC) (typ.) Internal Connections TPC8208 20 ±12 5 1.5 ⎯ 70 50 ⎯ ⎯ 9.5 (1) TPC8207 20 ±12 6 1.5 ⎯ 30 20 ⎯ ⎯ 22 (1) TPC8212-H 30 ±20 6 1.5 ⎯ ⎯ ⎯ 27 21 16 (1) TPC8216-H 30 ±20 6.4 1.5 ⎯ ⎯ ⎯ 23 20 14 (1) SOP-8 (mm) N-ch Dual TPC8218-H 60 ±20 3.8 1.5 ⎯ ⎯ ⎯ 64 57 11 (1) TPCA8011-H 20 ±12 40 45 ⎯ 7.5 ⎯ 3.5 ⎯ 32 (2) TPCA8023-H 30 ±20 21 30 ⎯ ⎯ ⎯ 15.7 12.9 21 (2) TPCA8063-H 30 ±20 22 35 ⎯ ⎯ ⎯ 8.7 6.8 27 (2) TPCA8040-H 30 ±20 23 30 ⎯ ⎯ ⎯ 10.8 5.6 23 (2) TPCA8030-H 30 ±20 24 30 ⎯ ⎯ ⎯ 13.4 11 21 (2) TPCA8031-H 30 ±20 24 30 ⎯ ⎯ ⎯ 13.4 11 21 (2) TPCA8021-H 30 ±20 27 45 ⎯ ⎯ ⎯ 13 9 23 (2) TPCA8062-H 30 ±20 28 42 ⎯ ⎯ ⎯ 7.1 5.6 34 (2) TPCA8018-H 30 ±20 30 45 ⎯ ⎯ ⎯ 8.2 6.2 34 (2) TPCA8039-H 30 ±20 34 45 ⎯ ⎯ ⎯ 6.6 5.7 36 (2) TPCA8024 30 ±20 35 45 ⎯ ⎯ ⎯ 7.8 4.3 45 (2) TPCA8036-H 30 ±20 38 45 ⎯ ⎯ ⎯ 4.8 4.2 50 (2) TPCA8012-H 30 ±20 40 45 ⎯ ⎯ ⎯ 6.8 4.9 42 (2) TPCA8025 30 ±20 40 45 ⎯ ⎯ ⎯ 6 3.5 49 (2) TPCA8019-H 30 ±20 45 45 ⎯ ⎯ ⎯ 4.1 3.1 66 (2) TPCA8026 30 ±20 45 45 ⎯ ⎯ ⎯ 4.5 2.2 113 (2) TPCA8042 30 ±20 45 45 ⎯ ⎯ ⎯ 5.7 3.3 56 (2) TPCA8060-H 30 ±20 45 45 ⎯ ⎯ ⎯ 3.9 3.4 66 (2) TPCA8028-H 30 ±20 50 45 ⎯ ⎯ ⎯ 3.2 2.8 88 (2) TPCA8055-H 30 ±20 60 45 ⎯ ⎯ ⎯ 2.4 1.9 76 (2) TPCA8020-H 40 ±20 7.5 30 ⎯ ⎯ ⎯ 35 27 11 (2) TPCA8052-H 40 ±20 20 30 ⎯ ⎯ ⎯ 13.1 11.3 25 (2) TPCA8047-H 40 ±20 32 45 ⎯ ⎯ ⎯ 8.5 7.3 43 (2) TPCA8046-H 40 ±20 38 45 ⎯ ⎯ ⎯ 6.3 5.4 55 (2) TPCA8045-H 40 ±20 46 45 ⎯ ⎯ ⎯ 4.1 3.6 90 (2) TPCA8053-H 60 ±20 15 30 ⎯ ⎯ ⎯ 24 22.3 25 (2) TPCA8050-H 60 ±20 24 45 ⎯ ⎯ ⎯ 15.3 14.2 41 (2) SOP Advance (mm) N-ch Single TPCA8049-H 60 ±20 28 45 ⎯ ⎯ ⎯ 11.2 10.4 55 (2) 2SK2615 60 ⎯ 2 1.5 ⎯ ⎯ 440 ⎯ 300 6 PW-Mini (mm) N-ch Single 2SK3658 60 ⎯ 2 1.5 ⎯ ⎯ 440 ⎯ 300 5.0 2SK2989 50 ⎯ 5 0.9 ⎯ ⎯ 330 ⎯ 150 6.5 LSTM (mm) N-ch Single 2SK2961 60 ⎯ 2 0.9 ⎯ ⎯ 380 ⎯ 270 5.8

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. ♦Internal Connections (1) (2) 8 6 1 2 3 7 5 8 6 1 2 3 7 5 Note: Some MOSFETs do not have a Zener diode between gate and source. ♦The internal connection diagrams only show the general configurations of the circuits. 26 2010/9 SCE0004K

RDS(ON) Max (mΩ) Package Polarity Part Number V DSS (V) VGSS (V) ID (A) PD (W) VGS = 2.0 V VGS = 2.5 V VGS = 4 V VGS = 4.5 V VGS = 6 V VGS = 10 V Qg (nC) (typ.) Internal Connections TPS (mm) N-ch Single 2SK2229 60 ⎯ 5 1.3 ⎯ ⎯ 300 ⎯ ⎯ 160 12 2SK2493 16 ⎯ 5 20 ⎯ 120 100 ⎯ ⎯ ⎯ 23 PW-Mold (mm) N-ch Single 2SK4033 60 ⎯ 5 20 ⎯ ⎯ 150 ⎯ ⎯ 100 15 New PW-Mold2 (mm) N-ch Single 2SK4017 60 ⎯ 5 20 ⎯ ⎯ 150 ⎯ ⎯ 100 15 2SK2614 50 ⎯ 20 40 ⎯ ⎯ 80 ⎯ ⎯ 46 25 DP (mm) N-ch Single 2SK2782 60 ⎯ 20 40 ⎯ ⎯ 90 ⎯ ⎯ 55 25 TK40P03M1 30 ±20 40 40 ⎯ ⎯ ⎯ 14.4 ⎯ 10.8 9.4 TK45P03M1 30 ±20 45 33 ⎯ ⎯ ⎯ 12 ⎯ 9.4 13 TK50P03M1 30 ±20 50 60 ⎯ ⎯ ⎯ 9.8 ⎯ 7.5 13.3 TK60P03M1 30 ±20 60 48 ⎯ ⎯ ⎯ 7.9 ⎯ 6.2 21 TK20P04M1 40 ±20 20 27 ⎯ ⎯ ⎯ 34 ⎯ 29 7.6 TK40P04M1 40 ±20 40 60 ⎯ ⎯ ⎯ 13.4 ⎯ 11 15 DPAK (mm) N-ch Single TK50P04M1 40 ±20 50 60 ⎯ ⎯ ⎯ 10.2 ⎯ 8.7 20 TK70X04K3 40 ⎯ 70 80 ⎯ ⎯ ⎯ ⎯ ⎯ 5.6 62 TK70X04K3Z 40 ⎯ 70 80 ⎯ ⎯ ⎯ ⎯ ⎯ 5.6 62 2SK3843 40 ⎯ 75 125 ⎯ ⎯ ⎯ 8 ⎯ 3.5 210 TK80X04K3 40 ⎯ 80 125 ⎯ ⎯ ⎯ ⎯ ⎯ 3.5 100 TK70X06K3 60 ⎯ 70 80 ⎯ ⎯ ⎯ ⎯ ⎯ 8 62 2SK3842 60 ⎯ 75 125 ⎯ ⎯ ⎯ ⎯ ⎯ 5.8 196 TFP (mm) N-ch Single 2SK4034 60 ⎯ 75 125 ⎯ ⎯ ⎯ 10 ⎯ 5.8 196 TK100F04K3 40 ⎯ 100 200 ⎯ ⎯ ⎯ ⎯ ⎯ 3 102 TK100F04K3L 40 ⎯ 100 200 ⎯ ⎯ ⎯ ⎯ 4.5 3 105 TK150F04K3 40 ⎯ 150 300 ⎯ ⎯ ⎯ ⎯ ⎯ 2.1 166 TK100F06K3 60 ⎯ 100 200 ⎯ ⎯ ⎯ ⎯ ⎯ 5 98 TK150F04K3L 40 ⎯ 150 300 ⎯ ⎯ ⎯ ⎯ 3.2 2.1 190 TO-220 SM(W) (mm) N-ch Single TK130F06K3 60 ⎯ 130 300 ⎯ ⎯ ⎯ ⎯ ⎯ 3.4 170

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 27 2010/9 SCE0004K

VDSS ≤ 60 V (Power MOSFETs) (N-ch MOSFETs) (Continued) RDS(ON) Max (mΩ) Package Polarity Part Number V DSS (V) ID (A) P D (W) VGS = 2.0 V VGS = 2.5 V VGS = 4 V VGS = 4.5 V VGS = 10 V Qg (nC) (typ.) Internal Connections 2SK3847 40 32 30 ⎯ ⎯ ⎯ 26 16 40 2SK3051 50 45 40 ⎯ ⎯ ⎯ ⎯ 30 36 2SK2311 60 25 40 ⎯ ⎯ 80 ⎯ 46 38 2SK2266 60 45 65 ⎯ ⎯ 55 ⎯ 30 60 TO-220FL (mm) TO-220SM (mm) N-ch Single 2SK2376 60 45 100 ⎯ ⎯ 25 ⎯ 17 110 2SK3846 40 26 25 ⎯ ⎯ ⎯ 28 18 40 2SK2507 50 25 30 ⎯ ⎯ 80 ⎯ 46 25 2SK2886 50 45 40 ⎯ ⎯ 36 ⎯ 20 66 2SK2232 60 25 35 ⎯ ⎯ 80 ⎯ 46 38 2SK3662 60 35 35 ⎯ ⎯ 19 ⎯ 12.5 91 2SK2385 60 36 40 ⎯ ⎯ 55 ⎯ 30 60 TO-220NIS (mm) N-ch Single 2SK3844 60 45 45 ⎯ ⎯ ⎯ ⎯ 5.8 196 TK30A06J3A 60 30 25 ⎯ ⎯ ⎯ 35 26 36 TO-220SIS (mm) N-ch Single TK70A06J1 60 70 45 ⎯ ⎯ ⎯ 7.6 6.4 87 TK25E06K3 60 25 64 ⎯ ⎯ ⎯ ⎯ 18 ⎯ TO-220 (mm) N-ch Single TK50E06K3A 60 50 104 ⎯ ⎯ ⎯ ⎯ 8.5 54 2SK3506 30 45 100 ⎯ ⎯ ⎯ ⎯ 20 39 TK70J04J3 40 70 150 ⎯ ⎯ ⎯ 8.3 3.8 210 2SK2550 50 45 100 ⎯ ⎯ ⎯ ⎯ 30 36 2SK2744 50 45 125 ⎯ ⎯ ⎯ ⎯ 20 68 2SK2551 50 50 150 ⎯ ⎯ ⎯ ⎯ 11 130 2SK2745 50 50 150 ⎯ ⎯ 16 ⎯ 9.5 130 2SK2233 60 45 100 ⎯ ⎯ 55 ⎯ 30 60 2SK2398 60 45 100 ⎯ ⎯ ⎯ ⎯ 30 60 2SK2173 60 50 125 ⎯ ⎯ 25 ⎯ 17 110 2SK2445 60 50 125 ⎯ ⎯ ⎯ ⎯ 18 110 2SK2313 60 60 150 ⎯ ⎯ 15 ⎯ 11 170 TO-3P(N) (mm) N-ch Single 2SK3845 60 70 125 ⎯ ⎯ ⎯ ⎯ 5.8 196 TO-3P(L) (mm) N-ch Single 2SK2267 60 60 150 ⎯ ⎯ 15 ⎯ 11 170

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 28 2010/9 SCE0004K

60 V < VDSS ≤ 250 V (Power MOSFETs) (N-ch MOSFETs)

RDS(ON) Max (mΩ) Package Polarity Part Number VDSS (V) VGSS (V) ID (A) PD (W) VGS = 1.8 V VGS = 2.0 V VGS = 2.5 V VGS = 4 V VGS = 4.5 V VGS = 7 V VGS = 10 V Qg (nC) (typ.) Internal Connections PS-8 (mm) N-ch Single TPCP8003-H 100 ±20 2.2 1.68 ⎯ ⎯ ⎯ ⎯ 190 ⎯ 180 7.5 (1) TPC8051-H 80 ±20 13 1.9 ⎯ ⎯ ⎯ ⎯ 10.1 ⎯ 9.7 85 (1) TPC8054-H 100 ±20 10 1.9 ⎯ ⎯ ⎯ ⎯ 21.5 ⎯ 19.9 92 (1) SOP-8 (mm) N-ch Single TPC8012-H 200 ±20 1.8 1.9 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 400 11 (1) TPCA8070-H 80 ±25 12 45 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 35 21 (1) TPCA8051-H 80 ±20 28 45 ⎯ ⎯ ⎯ ⎯ 9.8 ⎯ 9.4 91 (1) TPCA8072-H 100 ±25 8 45 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 71 22 (1) TPCA8006-H 100 ±20 18 45 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 67 12 (1) TPCA8071-H 100 ±25 20 45 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 20 70 (1) TPCA8054-H 100 ±20 20 45 ⎯ ⎯ ⎯ ⎯ 21.3 ⎯ 19.7 89 (1) TPCA8009-H 150 ±20 7 45 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 350 10 (1) TPCA8010-H 200 ±20 5.5 45 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 450 10 (1) SOP Advance (mm) N-ch Single TPCA8008-H 250 ±20 4 45 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 580 10 (1) 2SK2963 100 ⎯ 1 1.5 ⎯ ⎯ ⎯ 950 ⎯ ⎯ 700 6.3 PW-Mini (mm) N-ch Single 2SK2992 200 ⎯ 1 1.5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 3500 3 2SK2962 100 ⎯ 1 0.9 ⎯ ⎯ ⎯ 950 ⎯ ⎯ 700 6.3 LSTM (mm) N-ch Single 2SK3670 150 ⎯ 0.67 0.9 ⎯ ⎯ ⎯ 1700 ⎯ ⎯ ⎯ 4.6 2SK2200 100 ⎯ 3 1.3 ⎯ ⎯ ⎯ 450 ⎯ ⎯ 350 13.5 2SK2400 100 ⎯ 5 1.3 ⎯ ⎯ ⎯ 300 ⎯ ⎯ 230 22 TPS (mm) N-ch Single 2SK2835 200 ⎯ 5 1.3 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 800 10

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. ♦Internal Connections (1) 8 6 1 2 3 7 5 Note: Some MOSFETs do not have a Zener diode between gate and source. ♦The internal connection diagrams only show the general configurations of the circuits. 29 2010/9 SCE0004K

60 V < VDSS ≤ 250 V (Power MOSFETs) (N-ch MOSFETs) (Continued)

RDS(ON) Max (mΩ) Package Polarity Part Number VDSS (V) ID (A) PD (W) VGS = 1.8 V VGS = 2.0 V VGS = 2.5 V VGS = 4 V VGS = 4.5 V VGS = 7 V VGS = 10 V Qg (nC) (typ.) Internal Connections 2SK2201 100 3 20 ⎯ ⎯ ⎯ 450 ⎯ ⎯ 350 13.5 2SK2399 100 5 20 ⎯ ⎯ ⎯ 300 ⎯ ⎯ 230 22 2SK3669 100 10 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 125 8.0 2SK3205 150 5 20 ⎯ ⎯ ⎯ 750 ⎯ ⎯ 500 12 2SK2162 180 1 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 5000 ⎯ 2SK2920 200 5 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 800 10 2SK3462 250 3 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1700 12 PW-Mold (mm) N-ch Single 2SK3342 250 4.5 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1000 10 2SK4018 100 3 20 ⎯ ⎯ ⎯ 450 ⎯ ⎯ 350 13.5 2SK4019 100 5 20 ⎯ ⎯ ⎯ 300 ⎯ ⎯ 230 22 2SK4020 200 5 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 800 10 2SK4022 250 3 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1700 12 New PW-Mold2 (mm) N-ch Single 2SK4021 250 4.5 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1000 10 2SK3387 150 18 100 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 120 57 TK50X15J1 150 50 125 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 30 75 2SK3444 200 25 125 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 82 44 2SK3388 250 20 125 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 105 100 TFP (mm) N-ch Single 2SK3445 250 20 125 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 105 45 TK40F08K3 75 40 107 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 8.5 80 TO-220SM(W) (mm) N-ch Single TK80F08K3 75 80 300 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 4.3 175 2SK2789 100 27 60 ⎯ ⎯ ⎯ 130 ⎯ ⎯ 85 50 2SK2401 200 15 75 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 180 40 2SK3625 200 25 125 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 82 44 2SK2598 250 13 60 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 250 40 TO-220FL (mm) TO-220SM (mm) N-ch Single 2SK2993 250 20 100 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 105 100 2SK2314 100 27 75 ⎯ ⎯ ⎯ 130 ⎯ ⎯ 85 50 TO-220AB (mm) N-ch Single 2SK2914 250 7.5 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 500 20 2SK2391 100 20 35 ⎯ ⎯ ⎯ 130 ⎯ ⎯ 85 50 2SK2882 150 18 45 ⎯ ⎯ ⎯ 180 ⎯ ⎯ 120 57 2SK2013 180 1 25 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 5000 ⎯ 2SK2381 200 5 25 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 800 10 2SK2350 200 8.5 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 400 17 2SK2965 200 11 35 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 260 30 2SK2382 200 15 45 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 180 40 2SK2417 250 7.5 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 500 20 2SK2508 250 13 45 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 250 40 TO-220NIS (mm) N-ch Single 2SK3994 250 20 45 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 105 45

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 30 2010/9 SCE0004K

RDS(ON) Max (mΩ) Package Polarity Part Number VDSS (V) VGSS (V) ID (A) PD (W) VGS = 1.8 V VGS = 2.0 V VGS = 2.5 V VGS = 4 V VGS = 4.5 V VGS = 7 V VGS = 10 V Qg (nC) (typ.) Internal Connections TK40A08K3 75 ±20 40 35 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 9 80 TK60A08J1 75 ±20 60 45 ⎯ ⎯ ⎯ ⎯ 9.3 ⎯ 7.8 86 TK80A08K3 75 ±20 80 40 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 4.5 175 TK8A10K3 100 ±20 8 18 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 120 12.9 TK12A10K3 100 ±20 12 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 80 18 TK25A10K3 100 ±20 25 25 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 40 34 TK40A10J1 100 ±20 40 40 ⎯ ⎯ ⎯ ⎯ 17 ⎯ 15 76 TK40A10K3 100 ±20 40 40 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 15 85 TO-220SIS (mm) N-ch Single TK55A10J1 100 ±20 55 45 ⎯ ⎯ ⎯ ⎯ 12 ⎯ 10.5 110 TK50E08K3 75 ±20 50 104 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 12 55 TK18E10K3 100 ±20 18 71 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 42 33 TO-220 (mm) N-ch Single TK40E10K3 100 ±20 40 147 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 15 84 2SK3940 75 ⎯ 70 150 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 7 200 2SK1381 100 ⎯ 50 150 ⎯ ⎯ ⎯ 46 ⎯ ⎯ 32 88 2SK3497 180 ⎯ 10 130 ⎯ ⎯ ⎯ ⎯ ⎯ 150 ⎯ 36 2SK3176 200 ⎯ 30 150 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 52 125 TO-3P(N) (mm) N-ch Single 2SK2967 250 ⎯ 30 150 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 68 132 TO-3P(N)IS (mm) N-ch Single 2SK2995 250 ⎯ 30 90 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 68 132 2SK1382 100 ⎯ 60 200 ⎯ ⎯ ⎯ 29 ⎯ ⎯ 20 176 TO-3P(L) (mm) N-ch Single

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 31 2010/9 SCE0004K

250 V < VDSS ≤ 700 V (Power MOSFETs) (N-ch MOSFETs)

RDS(ON) Max (Ω) Package Polarity Part Number V DSS (V) I D (A) P D (W) VGS = 10 V Qg (nC) (typ.) Internal Connections PW-Mini (mm) N-ch Single 2SK3471 500 0.5 1.5 18 3.8 LSTM (mm) N-ch Single 2SK2998 500 0.5 0.9 18 3.8 2SK3374 450 1 1.3 4.6 5 2SK3302 500 0.5 1.3 18 3.8 2SK2599 500 2 1.3 3.2 9 TPS (mm) N-ch Single 2SK2846 600 2 1.3 5.0 9 2SK3498 400 1 20 5.5 5.7 2SK3472 450 1 20 4.6 5 2SK3373 500 2 20 3.2 9 2SK3371 600 1 20 9.0 9 PW-Mold (mm) N-ch Single 2SK2865 600 2 20 5.0 9 2SK4103 500 5 40 1.5 16 New PW-Mold (mm) N-ch Single TK2P60D 600 2 60 4.3 7 2SK4023 450 1 20 4.6 5 2SK4026 600 1 20 9.0 9 2SK4002 600 2 20 5.0 9 TK2Q60D 600 2 60 4.3 7 New PW-Mold2 (mm) N-ch Single 2SK4003 600 3 20 2.2 15 TK4P50D 500 4 80 2.0 9 TK5P50D 500 5 80 1.5 11 TK7P50D 500 7 100 1.22 12 TK5P53D 525 5 80 1.5 11 TK6P53D 525 6 100 1.3 12 TK4P55DA 550 3.5 80 2.45 9 TK4P55D 550 4 80 1.88 11 TK4P60DA 600 3.5 80 1.7 11 DPAK (mm) N-ch Single TK4P60DB 600 3.7 80 2.0 11

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 32 2010/9 SCE0004K

RDS(ON) Max (Ω) Package Polarity Part Number V DSS (V) I D (A) P D (W) VGS = 10 V Qg (nC) (typ.) Internal Connections DP (mm) N-ch Single 2SK3863 500 5 35 1.5 16 TK10X40D 400 10 125 0.55 20 2SK3544 450 13 100 0.4 34 2SK3466 500 5 50 1.5 17 2SK3538 500 8 65 0.85 30 2SK3398 500 12 100 0.52 45 TK12X53D 525 12 150 0.58 25 2SK3438 600 10 80 1.0 28 TK12X60U 600 12 100 0.4 14 TK15X60U 600 15 125 0.3 17 TFP (mm) N-ch Single TK20X60U 600 20 150 0.19 27 2SK2838 400 5.5 40 1.2 17 2SK2949 400 10 80 0.55 34 2SK3309 450 10 65 0.65 23 2SK3403 450 13 100 0.4 34 2SK2991 500 5 50 1.5 17 2SK3417 # 500 5 50 1.8 17 2SK2776 500 8 65 0.85 30 2SK3068 500 12 100 0.52 45 2SK2777 600 6 65 1.25 30 2SK3312 600 6 65 1.25 22 2SK2889 600 10 100 0.75 45 2SK3399 600 10 100 0.75 35 TO-220FL (mm) TO-220SM (mm) N-ch Single 2SK3437 600 10 80 1.0 28 2SK2841 400 10 80 0.55 34 2SK2542 500 8 80 0.85 30 2SK3085 600 3.5 75 2.2 20 TO-220AB (mm) N-ch Single 2SK2866 600 10 125 0.75 45 2SK2679 400 5.5 35 1.2 17 2SK2952 400 8.5 40 0.55 34 2SK3310 450 10 40 0.65 23 2SK3743 450 13 40 0.4 34 2SK3313 # 500 12 40 0.62 45 TO-220NIS (mm) N-ch Single 2SK3265 700 10 45 1.0 53 #: HSD type

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 33 2010/9 SCE0004K

250 V < VDSS ≤ 700 V (Power MOSFETs) (N-ch MOSFETs) (Continued)

RDS(ON) Max (Ω) Package Polarity Part Number V DSS (V) I D (A) P D (W) VGS = 10 V Qg (nC) (typ.) Internal Connections 2SK3757 450 2 30 2.45 9 2SK3766 450 2 30 2.45 8 TK5A45DA 450 4.5 30 1.75 9 TK6A45DA 450 5.5 35 1.35 11 TK7A45DA 450 6.5 35 1.2 11 TK8A45DA 450 7.5 35 1.1 12 TK8A45D 450 8 35 0.9 16 TK9A45D 450 9 40 0.77 16 2SK3869 450 10 40 0.68 28 TK11A45D 450 11 40 0.62 20 TK12A45D 450 12 45 0.52 24 TK13A45D 450 13 45 0.46 25 TK14A45DA 450 13.5 45 0.41 28 TK14A45D 450 14 45 0.34 38 TK16A45D 450 16 50 0.27 40 2SK3935 450 17 50 0.25 62 TK19A45D 450 19 50 0.25 45 TK4A50D 500 4 30 2.0 9 2SK3563 500 5 35 1.5 16 2SK3868 # 500 5 35 1.7 16 TK5A50D 500 5 35 1.5 11 TK5A50D5 # 500 5 35 2.1 11 TK6A50D 500 6 35 1.4 11 TK7A50D 500 7 35 1.22 12 TK7A50D5 # 500 7 35 1.68 12 TK8A50DA 500 7.5 35 1.04 16 2SK3561 500 8 40 0.85 28 2SK4042 # 500 8 40 0.97 28 TK8A50D 500 8 40 0.85 16 TK10A50D 500 10 45 0.72 20 TK11A50D 500 11 45 0.6 38 2SK3568 500 12 40 0.52 42 TK12A50D 500 12 45 0.52 25 TK12A50D5 # 500 12 45 0.73 30 TK13A50DA 500 12.5 45 0.47 28 2SK4012 500 13 45 0.4 50 TK13A50D 500 13 45 0.4 32 2SK3934 500 15 50 0.3 62 TK15A50D 500 15 50 0.3 40 TK18A50D 500 18 50 0.27 45 TK4A53D 525 4 35 1.7 11 TK5A53D 525 5 35 1.5 11 TK6A53D 525 6 35 1.3 12 TK12A53D 525 12 45 0.58 25 TK4A55DA 550 3.5 30 2.45 9 TK4A55D 550 4 35 1.88 11 TK5A55D 550 5 35 1.7 11 TK6A55DA 550 5.5 35 1.48 12 TK8A55DA 550 7.5 40 1.07 16 TK9A55DA 550 8.5 40 0.86 20 TK10A55D 550 10 45 0.72 24 TK11A55D 550 11 45 0.63 25 TK12A55D 550 12 45 0.57 28 TK13A55DA 550 12.5 45 0.48 38 TK14A55D 550 14 50 0.37 40 TK16A55D 550 16 50 0.33 45 2SK3767 600 2 25 4.5 9 TK3A60DA 600 2.5 30 2.8 9 2SK3567 600 3.5 35 2.2 16 TK4A60DA5 # 600 3.5 35 3.08 11 TK4A60DA 600 3.5 35 2.2 11 TO-220SIS (mm) N-ch Single TK4A60DB 600 3.7 35 2 11 #: HSD type

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 34 2010/9 SCE0004K

RDS(ON) Max (Ω) Package Polarity Part Number V DSS (V) I D (A) P D (W) VGS = 10 V Qg (nC) (typ.) Internal Connections TK4A60D 600 4 35 1.7 12 TK4A60D5 # 600 4 35 2.38 12 TK5A60D 600 5 35 1.43 16 2SK3562 600 6 40 1.25 28 2SK3947 # 600 6 40 1.4 28 TK6A60D 600 6 40 1.25 16 2SK3667 600 7.5 45 1.0 33 TK8A60DA 600 7.5 45 1.0 20 2SK3569 600 10 45 0.75 42 2SK4015 # 600 10 45 0.86 42 TK10A60D 600 10 45 0.75 25 TK10A60D5 # 600 10 45 1.0 25 TK11A60D 600 11 45 0.65 28 TK12A60D 600 12 45 0.55 38 TK12A60U 600 12 35 0.4 14 2SK3797 600 13 50 0.43 62 2SK4016 # 600 13 50 0.5 62 TK13A60D 600 13 40 0.43 40 TK15A60D 600 15 50 0.37 45 TK15A60U 600 15 40 0.30 17 TK20A60U 600 20 45 0.19 27 TK2A65D 650 2 30 3.26 9 TK3A65DA 650 2.5 35 2.51 11 TK3A65D 650 3 35 2.25 11 TK4A65DA 650 3.5 35 1.9 12 TK5A65DA 650 4.5 35 1.67 16 TK5A65D 650 5 40 1.43 16 TK6A65D 650 6 45 1.11 20 TK7A65D 650 7 45 0.98 24 TK8A65D 650 8 45 0.84 25 TK13A65U 650 13 40 0.38 17 TO-220SIS (mm) N-ch Single TK17A65U 650 17 45 0.26 27 2SK3904 450 19 150 0.26 62 2SK2601 500 10 125 1.0 30 2SK3314 # 500 15 150 0.49 58 2SK4107 500 15 150 0.4 48 TK15J50D 500 15 210 0.4 32 2SK3905 500 17 150 0.31 62 2SK4108 500 20 150 0.27 62 TK20J50D 500 20 280 0.27 45 2SK3907 500 23 150 0.24 60 2SK3936 # 500 23 150 0.25 60 TK12J55D 550 12 190 0.57 28 TK16J55D 550 16 250 0.37 40 TK19J55D 550 19 280 0.33 45 2SK2602 600 6 125 1.25 30 2SK2699 600 12 150 0.65 58 TK12J60U 600 12 144 0.4 14 2SK3903 600 14 150 0.44 62 TK15J60T 600 15 170 0.30 21 TK15J60U 600 15 170 0.3 17 2SK3906 # 600 20 150 0.33 60 2SK3911 600 20 150 0.30 60 TK20J60T 600 20 190 0.19 30 TK20J60U 600 20 190 0.19 27 TK40J60T 600 40 400 0.08 67 TK40J60U 600 40 320 0.08 55 TK50J60U 600 50 400 0.065 67 TK13J65U 650 13 170 0.38 17 TO-3P(N) (mm) N-ch Single TK17J65U 650 17 190 0.26 27 #: HSD type

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 35 2010/9 SCE0004K

Package Polarity Part Number V DSS (V) I D (A) P D (W) R DS(ON) Max (Ω) Qg (nC) (typ.) Internal Connections 2SK2916 500 14 80 0.4 58 2SK2917 500 18 90 0.27 80 2SK2953 600 15 90 0.4 80 TK40M60U 600 40 90 0.08 55 TO-3P(N)IS (mm) N-ch Single 2SK3453 700 10 80 1.0 53 2SK1486 300 32 200 0.095 140 2SK1544 500 25 200 0.2 150 2SK3131 # 500 50 250 0.11 280 TO-3P(L) (mm) N-ch Single 2SK3132 500 50 250 0.095 280 #: HSD type

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 36 2010/9 SCE0004K

700 V < VDSS (Power MOSFETs) (N-ch MOSFETs)

RDS(ON) Max (Ω) Package Polarity Part Number V DSS (V) I D (A) P D (W) VGS = 10 V Qg (nC) (typ.) Internal Connections PW-Mold (mm) N-ch Single 2SK3301 900 1 20 20 6 DP (mm) N-ch Single 2SK2845 900 1 40 9.0 15 New PW-Mold2 (mm) N-ch Single TK1Q90A 900 1 20 9.0 13 2SK2883 800 3 75 3.6 25 2SK2884 800 5 100 2.2 34 TO-220FL (mm) TO-220SM (mm) N-ch Single 2SK1930 1000 4 80 3.8 60 TO-220SM (mm) N-ch Single 2SK3879 800 6.5 80 1.7 35 2SK2603 800 3 100 3.6 25 2SK2733 900 1 60 9.0 15 2SK2608 900 3 100 4.3 25 TO-220AB (mm) N-ch Single 2SK1119 1000 4 100 3.8 60

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 37 2010/9 SCE0004K

700 V < VDSS (Power MOSFETs) (N-ch MOSFETs) (Continued)

RDS(ON) Max (Ω) Package Polarity Part Number V DSS (V) I D (A) P D (W) VGS = 10 V Qg (nC) (typ.) Internal Connections 2SK4013 800 6 45 1.7 45 2SK3566 900 2.5 40 6.4 12 2SK3564 900 3 40 4.3 17 2SK3798 900 4 40 3.5 26 2SK3565 900 5 45 2.5 28 2SK3742 900 5 45 2.5 25 2SK4014 900 6 45 2.0 45 TO-220SIS (mm) N-ch Single 2SK3799 900 8 50 1.3 62 2SK3633 800 7 150 1.7 35 2SK2607 800 9 150 1.2 68 2SK2719 900 3 125 4.3 25 2SK3700 900 5 150 2.5 28 2SK4115 900 7 150 2.0 45 2SK3473 900 9 150 1.6 38 2SK3878 900 9 150 1.3 62 2SK2968 900 10 150 1.25 70 2SK4207 900 13 150 0.95 45 2SK1359 1000 5 125 3.8 60 TO-3P(N) (mm) N-ch Single 2SK2613 1000 8 150 1.7 65 2SK3880 800 6.5 80 1.7 35 2SK2606 800 8 85 1.2 68 2SK2847 900 8 85 1.4 58 2SK3017 900 8.5 90 1.25 70 TO-3P(N)IS (mm) N-ch Single 2SK1365 1000 7 90 1.8 120 TO-3P(L) (mm) N-ch Single 2SK1489 1000 12 200 1.0 110

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 38 2010/9 SCE0004K

VDSS ≤ 60 V (Power MOSFETs) (P-ch MOSFETs) RDS(ON) Max (mΩ) Package Polarity Part Number VDSS (V) VGSS (V) ID (A) VGS 1.2 V VGS =1.5 V VGS =1.8 V VGS =2.5 V VGS =4.0 V VGS =4.5 V Ciss (pF) Internal FET Internal Connections CST3B (mm) P-ch SSM3J46CTB ** −20 ±8 −2 ⎯ 250 178 133 ⎯ 103 290 ⎯ (4) SSM6J212FE * −20 ±8 −3.3 ⎯ 94 65.4 49 ⎯ 40.7 970 ⎯ (2) SSM6J53FE −20 ±8 −1.8 ⎯ 364 204 136 ⎯ ⎯ 568 ⎯ (2) SSM6J206FE −20 ±8 −2.0 ⎯ ⎯ 320 186 130 ⎯ 335 ⎯ (2) SSM6J205FE −20 ±8 −0.8 ⎯ ⎯ 460 306 234 ⎯ 250 ⎯ (2) SSM6J26FE −20 ±8 −0.5 ⎯ ⎯ 980 330 230 ⎯ 250 ⎯ (2) SSM6J23FE −12 ±8 −1.2 ⎯ ⎯ ⎯ 210 160 ⎯ 420 ⎯ (2) SSM6J25FE −20 ±12 −0.5 ⎯ ⎯ ⎯ 430 260 ⎯ 218 ⎯ (2) P-ch ES6 0.55 1.6 1.6 (mm) P-ch + P-ch SSM6P41FE * −20 ±8 −0.72 ⎯ 1040 670 440 ⎯ 300 110 ⎯ (1) SSM3J132TU ** −12 ±6 −5.4 94 39 29 21 ⎯ 17 2700 ⎯ (3) SSM3J120TU −20 ±8 −4.0 ⎯ 140 78 49 38 ⎯ 1484 ⎯ (3) SSM3J129TU * −20 ±8 −4.6 ⎯ 137 88 62 ⎯ 46 640 ⎯ (3) SSM3J115TU −20 ±8 −2.2 ⎯ 353 193 125 98 ⎯ 568 ⎯ (3) SSM3J114TU −20 ±8 −1.8 ⎯ 526 321 199 149 ⎯ 331 ⎯ (3) SSM3J113TU −20 ±12 −1.7 ⎯ ⎯ 449 (@2.0 V) 249 169 ⎯ 370 ⎯ (3) SSM3J111TU −20 ±12 −1.0 ⎯ ⎯ ⎯ 680 480 ⎯ 160 ⎯ (3) UFM 0.7 2.1 2.0 (mm) P-ch SSM6J51TU −12 ±8 −4.0 ⎯ 150 85 54 ⎯ ⎯ 1700 ⎯ (2) SSM6J21TU −12 ±12 −3.0 ⎯ ⎯ ⎯ 88 50 ⎯ 1300 ⎯ (2) SSM6J50TU −20 ±10 −2.5 ⎯ ⎯ 205 (@2.0 V) 100 ⎯ 64 800 ⎯ (2) P-ch SSM6P54TU −20 ±8 −1.2 ⎯ 555 350 228 ⎯ ⎯ 331 ⎯ (1) SSM6P39TU −20 ±8 −1.5 ⎯ ⎯ 430 294 213 ⎯ 250 ⎯ (1) SSM6P28TU −20 ±8 −0.8 ⎯ ⎯ 460 306 234 ⎯ 250 SSM6J205FE x 2 (1) SSM6P26TU −20 ±8 −0.5 ⎯ ⎯ 980 330 230 ⎯ 250 SSM6J26FE x 2 (1) SSM6P25TU −20 ±12 −0.5 ⎯ ⎯ ⎯ 430 260 ⎯ 218 SSM6J25FE x 2 (1) UF6 0.7 2.1 2.0 (mm) P-ch x 2 SSM6J08FU −20 ±12 −1.3 ⎯ ⎯ 460 (@2.0 V) 260 180 ⎯ 370 ⎯ (2) SSM6J06FU −20 ±12 −0.65 ⎯ ⎯ ⎯ 700 500 ⎯ 160 ⎯ (2) US6 0.9 2.1 2.0 (mm) Pch P-ch x 2 SSM6P47NU −20 ±8 −4 ⎯ 242 170 125 ⎯ 95 290 ⎯ (6) SSM6J501NU −20 ±8 −10 ⎯ 48 33 25 ⎯ 20 2300 ⎯ (5) SSM6J502NU −20 ±8 −6 ⎯ 63.2 41.1 31 ⎯ 25.8 1800 ⎯ (5) UDFN6 (mm) P-ch SSM6J503NU −20 ±8 −6 ⎯ 80.4 56 39.7 ⎯ 29.8 840 ⎯ (5)

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product **: Under development ♦Internal Connections ♦The internal connection diagrams only show the general configurations of the circuits. 39 2010/9 SCE0004K

VDSS ≤ 60 V (Power MOSFETs) (P-ch MOSFETs) (Continued) RDS(ON) Max (mΩ) Package Polarity Part Number VDSS (V) VGSS (V) ID (A) PD (W) VGS = 1.5 V VGS = 1.8 V VGS = 2.0 V VGS = 2.5 V VGS = 4 V VGS = 4.5 V VGS = 7 V VGS = 10 V Ciss (pF) Qg (nC) (typ.) Internal Connections SSM3J307T −20 ±8 −5 1.25 83 56 ⎯ 40 ⎯ 31 ⎯ ⎯ 1170 19 (6) SSM3J321T −20 ±8 −5.2 1.25 137 88 ⎯ 62 ⎯ 46 ⎯ ⎯ 640 8.1 (6) SSM3J312T −12 ±8 −2.7 1.25 ⎯ 237 ⎯ 142 91 ⎯ ⎯ ⎯ 550 7.5 (6) SSM3J313T −20 ±8 −1.6 0.7 ⎯ 640 ⎯ 396 268 ⎯ ⎯ ⎯ 170 3.3 (6) SSM3J01T −30 ±10 −1.7 1.25 ⎯ ⎯ ⎯ 600 400 ⎯ ⎯ ⎯ 240 ⎯ (6) SSM3J02T −30 ±10 −1.5 1.25 ⎯ ⎯ ⎯ 700 500 ⎯ ⎯ ⎯ 150 ⎯ (6) TSM 2.8 2.9 0.7 (mm) P-ch S-MINI 2.5 2.9 1.5 (mm) P-ch SSM3J325F * −20 ±8 −2 1.2 311 231 ⎯ 179 ⎯ 150 ⎯ ⎯ 270 ⎯ (6) SSM3J328R * −20 ±8 -6 2 88.4 56 ⎯ 39.7 ⎯ 29.8 ⎯ ⎯ 840 12.8 (6) SSM3J327R * −20 ±8 −3.9 2 240 168 ⎯ 123 ⎯ 93 ⎯ ⎯ 290 ⎯ (6) SSM3J332R * −30 ±12 −6 2 ⎯ 145 ⎯ 77 ⎯ 55 ⎯ 47 506 7.3 (6) SOT-23F 2.4 2.9 0.8 (mm) P-ch TPCF8101 −12 ±8 −6 2.5 ⎯ 85 ⎯ 40 ⎯ 28 ⎯ ⎯ ⎯ 18 (2) TPCF8103 −20 ±8 −2.7 2.5 ⎯ 300 ⎯ 160 ⎯ 110 ⎯ ⎯ ⎯ 6 (2) TPCF8105 −20 ±12 −6 2.5 ⎯ 100 ⎯ 45 ⎯ 31 ⎯ ⎯ ⎯ 17 (2) TPCF8108 −20 ±12 −7 2.5 ⎯ 95 ⎯ 37 ⎯ 26 ⎯ ⎯ 1320 19 (2) P-ch Single TPCF8107 −30 −25/+20 −6 2.5 ⎯ ⎯ ⎯ ⎯ ⎯ 38 ⎯ 28 970 22 (2) TPCF8301 −20 ±8 −2.7 1.35 ⎯ 300 ⎯ 160 ⎯ 110 ⎯ ⎯ ⎯ 6 (3) TPCF8305 −20 ±12 −4 1.35 ⎯ 265 160 83 ⎯ 58 ⎯ ⎯ 680 9.2 (3) VS-8 (mm) P-ch Dual TPC6105 −20 ±8 −2.7 2.2 ⎯ 300 ⎯ 160 ⎯ 110 ⎯ ⎯ ⎯ 6 (1) TPC6113 −20 ±12 −5 2.2 ⎯ ⎯ ⎯ 85 ⎯ 55 ⎯ ⎯ 690 10 (1) VS-6 (mm) P-ch Single TPCP8101 −20 ±8 −5.6 1.68 ⎯ 90 ⎯ 41 ⎯ 30 ⎯ ⎯ ⎯ 19 (4) TPCP8102 −20 ±12 −7.2 1.68 ⎯ ⎯ 80 30 ⎯ 18 ⎯ ⎯ ⎯ 33 (4) P-ch Single TPCP8303 −20 ±8 −3.8 1.48 144 90 ⎯ 60 ⎯ 46 ⎯ ⎯ ⎯ 10 (3) TPCP8306 −20 ±12 −4 1.48 ⎯ 265 160 83 ⎯ 58 ⎯ ⎯ 680 9.2 (3) PS-8 (mm) P-ch Dual TPCP8305 −20 ±12 −6 1.48 ⎯ ⎯ ⎯ 42 ⎯ 30 ⎯ ⎯ 1500 21.5 (3)

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product ♦Internal Connections 6 4 1 2 3 8 6 1 2 3 7 5 12 3 7 5 8 6 1 2 3 7 5 Note: Some MOSFETs do not have a Zener diode between gate and source. ♦The internal connection diagrams only show the general configurations of the circuits. 40 2010/9 SCE0004K

RDS(ON) Max (mΩ) Package Polarity Part Number VDSS (V) VGSS (V) ID (A) PD (W) VGS = 1.8 V VGS = 2.0 V VGS = 2.5 V VGS = 4 V VGS = 4.5 V VGS = 7 V VGS = 10 V Qg (nC) (typ.) Internal Connections TPCC8102 −30 ±20 −15 26 ⎯ ⎯ ⎯ 33.2 ⎯ ⎯ 18.9 26 (1) TPCC8103 −30 ±20 −18 27 ⎯ ⎯ ⎯ 25 ⎯ ⎯ 12 38 (1) TSON Advance (mm) P-ch Single TPC8115 −20 ±8 −10 1.9 300 ⎯ 14 ⎯ 10 ⎯ ⎯ 115 (1) TPC8119 −30 ±20 −10 1.9 ⎯ ⎯ ⎯ 28 ⎯ ⎯ 13 40 (1) TPC8121 −30 ±20 −10 1.9 ⎯ ⎯ ⎯ 24 ⎯ ⎯ 12 42 (1) TPC8118 −30 ±20 −13 1.9 ⎯ ⎯ ⎯ 15 ⎯ ⎯ 7 65 (1) TPC8110 −40 ±20 −8 1.9 ⎯ ⎯ ⎯ 35 ⎯ ⎯ 25 48 (1) SOP-8 (mm) P-ch Single TPCA8105 −12 ±8 −6 20 92 ⎯ 51 ⎯ 33 ⎯ ⎯ 18 (1) TPCA8109 −30 −25/+20 −12 30 ⎯ ⎯ ⎯ ⎯ 13 ⎯ 9 56 (1) TPCA8106 −30 ±20 −40 45 ⎯ ⎯ ⎯ 7.8 ⎯ ⎯ 3.7 130 (1) TPCA8107-H −40 ±20 −7.5 30 ⎯ ⎯ ⎯ ⎯ 37 ⎯ 30 27 (1) SOP Advance (mm) P-ch Single TPCA8104 −60 ±20 −40 45 ⎯ ⎯ ⎯ 24 ⎯ ⎯ 16 90 (1) 2SJ360 −60 ⎯ −1 1.5 ⎯ ⎯ ⎯ 1200 ⎯ ⎯ 730 6.5 PW-Mini (mm) P-ch Single 2SJ508 −100 ⎯ −1 1.5 ⎯ ⎯ ⎯ 2500 ⎯ ⎯ 1900 6.3 2SJ537 −50 ⎯ −5 0.9 ⎯ ⎯ ⎯ 340 ⎯ ⎯ 190 18 2SJ507 −60 ⎯ −1 0.9 ⎯ ⎯ ⎯ 1000 ⎯ ⎯ 700 5.6 LSTM (mm) P-ch Single 2SJ509 −100 ⎯ −1 0.9 ⎯ ⎯ ⎯ 2500 ⎯ ⎯ 1900 6.3 2SJ378 −60 ⎯ −5 1.3 ⎯ ⎯ ⎯ 280 ⎯ ⎯ 190 22 TPS (mm) P-ch Single 2SJ669 −60 ⎯ −5 1.2 ⎯ ⎯ ⎯ 250 ⎯ ⎯ 170 15

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. ♦Internal Connections (1) 8 6 1 2 3 7 5 Note: Some MOSFETs do not have a Zener diode between gate and source. ♦The internal connection diagrams only show the general configurations of the circuits. 41 2010/9 SCE0004K

VDSS ≤ 60 V (Power MOSFETs) (P-ch MOSFETs) (Continued) RDS(ON) Max (mΩ) Package Polarity Part Number VDSS (V) VGSS (V) ID (A) PD (W) VGS = 1.8 V VGS = 2.0 V VGS = 2.5 V VGS = 4 V VGS = 4.5 V VGS = 6 V VGS = 7 V VGS = 10 V Qg (nC) (typ.) Internal Connections PW-Mold (mm) P-ch Single New PW-Mold2 (mm) P-ch Single 2SJ680 −200 ⎯ −2.5 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 2000 10 DPAK (mm) P-ch Single TJ15P04M3 −40 ±20 15 29 ⎯ ⎯ ⎯ ⎯ 48 ⎯ ⎯ 36 24 TJ80X04M3L −40 +10/−20 −80 150 ⎯ ⎯ ⎯ ⎯ ⎯ 5.9 ⎯ 3.9 250 TJ80X06M3L −60 +10/−20 −80 150 ⎯ ⎯ ⎯ ⎯ ⎯ 11.4 ⎯ 7.6 250 TFP (mm) P-ch Single TO-220FL (mm) TO-220SM (mm) P-ch Single TO-220NIS (mm) P-ch Single TO-220SIS (mm) P-ch Single

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 42 2010/9 SCE0004K

RDS(ON) Max (mΩ) Package Polarity Part Number VDSS (V) ID (A) PD (W) VGS = 1.8 V VGS = 2.0 V VGS = 2.5 V VGS = 4 V VGS = 4.5 V VGS =6 V VGS = 7 V VGS = 10 V Qg (nC) (typ.) Internal Connections TJ100F04M3L −40 −100 250 ⎯ ⎯ ⎯ ⎯ ⎯ 5.4 ⎯ 3.6 250 TJ150F04M3L −40 −150 300 ⎯ ⎯ ⎯ ⎯ ⎯ 4.2 ⎯ 2.8 390 TO-220SM(W) (mm) P-ch Single TJ150F06M3L −60 −150 300 ⎯ ⎯ ⎯ ⎯ ⎯ 6.1 ⎯ 5.6 420 TO-3P(N) (mm) P-ch Single TO-3P(N)IS (mm) TO-3P(L) (mm) P-ch Single 2SJ201 −200 −12 150 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 625 ⎯

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 43 2010/9 SCE0004K

VDSS ≤ 60 V (Power MOSFETs) (Complementary MOSFETs) RDS(ON) Max (mΩ) Package Polarity Part Number VDSS (V) VGSS (V) ID (A) VGS = 1.5 V VGS = 1.8 V VGS = 2.5 V VGS = 4.0 V VGS = 4.5 V VGS = 10 V Ciss (pF) Qg (nC) (typ.) Internal FET Internal Connections 20 ±10 1.6 247 190 139 119 ⎯ ⎯ 265 (1) SSM6L39TU −20 ±8 −1.5 ⎯ 430 294 213 ⎯ ⎯ 250 SSM6N39TU + SSM6P39TU (1) 20 ±12 0.8 ⎯ 235 178 143 ⎯ ⎯ 268 (1) SSM6L13TU −20 ±8 −0.8 ⎯ 460 306 234 ⎯ ⎯ 250 SSM3K102TU + SSM3J108TU (1) 20 ±12 0.5 ⎯ 395 190 145 ⎯ ⎯ 268 (1) SSM6L10TU −20 ±8 −0.5 ⎯ 980 330 230 ⎯ ⎯ 250 SSM6K25FE + SSM6J26FE (1) 20 ±12 0.5 ⎯ 395 190 145 ⎯ ⎯ 268 (1) SSM6L11TU SSM6K25FE + SSM6J25FE (1) 30 ±12 0.5 ⎯ ⎯ 180 145 ⎯ ⎯ 245 (1) SSM6L12TU −20 ±12 −0.5 ⎯ ⎯ 430 260 218 SSM6K24FE + SSM6J25FE (1) SSM6L40TU SSM6N40TU + SSM6P40TU (1) 20 ±10 0.1 15 Ω ⎯ 4.0 Ω 3.0 Ω ⎯ ⎯ 9.3 SSM3K16FU (2) SSM6E03TU −20 ±8 −1.8 ⎯ 335 180 144 ⎯ ⎯ 335 SSM3J109TU (2) 20 ±10 0.1 15 Ω ⎯ 4.0 Ω 3.0 Ω ⎯ ⎯ 9.3 SSM3K16FU (3) SSM6E02TU 20 ±10 0.05 ⎯ ⎯ 10 Ω ⎯ ⎯ ⎯ 11 SSM3K04FE (3) UF6 0.7 2.1 2.0 (mm) N-ch + P-ch SSM6E01TU 20 ±10 −0.8 600 450 330 ⎯ 240 ⎯ 90 2.0 SSM6N42FE (1) ES6 (mm) N-ch + P-ch SSM6L14FE −20 ±8 −0.72 1040 670 440 ⎯ 300 ⎯ 110 1.76 SSM6P41FE (1) VS-8 (mm) PS-8 (mm) N-ch + P-ch

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. ♦Internal Connections (1) (2) (3) (4) 123 7 5 Note: Some MOSFETs do not have a Zener diode between gate and source. ♦The internal connection diagrams only show the general configurations of the circuits. 44 2010/9 SCE0004K

(Load SW) RDS(ON) Max (mΩ) Package Polarity Part Number VDSS (V) VGSS (V) ID (A) PD (W) VGS = 1.5 V VGS = 1.8 V VGS = 2.0 V VGS = 2.5 V VGS = 4V VGS = 4.5 V VGS = 7V VGS = 10 V Ciss (pF) Qg (nC) (typ.) Internal Connections PS-8 (mm) Load SW TPCP8401 −12 ±8 −5.5 1.96 ⎯ 103 ⎯ 58 ⎯ 38 ⎯ ⎯ ⎯ 20 (1)

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. (MOSFET + BipTr) RDS(ON) Max (mΩ) Package Polarity Part Number VDSS (V) VGSS (V) ID (A) PD (W) VGS = 1.5 V VGS = 1.8 V VGS = 2.0 V VGS = 2.5 V VGS = 4V VGS = 4.5 V VGS = 7V VGS = 10 V Ciss (pF) Qg (nC) (typ.) Internal Connections PS-8 (mm) P-ch + BipTr
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. ♦Internal Connections (1) (2) 8 6 7 5 1 2 3 4 8 6 1 2 3 7 5 Note: Some MOSFETs do not have a Zener diode between gate and source. ♦The internal connection diagrams only show the general configurations of the circuits. 45 2010/9 SCE0004K

(MOSFET + SBD) MOSFET SBD RDS(ON) Max (mΩ) V F Max (V) Package Polarity Part Number VDSS (V) VGSS (V) ID (A) PD (W) VGS = 1.8 V VGS = 2.0 V VGS = 2.5 V VGS = 4.0 V VGS = 4.5 V VGS = 10 V Ciss (pF) VR (V) IO (A) IF = 1.0 A IF = 0.5 A IF = 0.3 A IF = 0.1 A Qg (nC) (typ.) Internal Connec- tions SSM5G10TU −20 ±8 −1.5 ⎯ 430 ⎯ 294 213 ⎯ ⎯ 250 20 0.7 ⎯ 0.39 ⎯ ⎯ ⎯ (1) SSM5G09TU −12 ±8 −1.5 ⎯ ⎯ ⎯ 200 130 ⎯ ⎯ 550 12 0.5 ⎯ 0.43 0.39 ⎯ ⎯ (1) SSM5G02TU −12 ±12 −1 ⎯ ⎯ ⎯ 240 160 ⎯ ⎯ 310 12 0.5 ⎯ 0.43 0.39 ⎯ ⎯ (1) SSM5G04TU −12 ±12 −1 ⎯ ⎯ ⎯ 420 240 ⎯ ⎯ 170 12 0.5 ⎯ 0.43 0.39 ⎯ ⎯ (1) SSM5G11TU −30 ±20 −1.4 ⎯ ⎯ ⎯ ⎯ 403 ⎯ 226 120 30 0.7 ⎯ 0.41 ⎯ ⎯ ⎯ (1) UFV 0.7 2.1 2.0 UDFN6 (mm) SSM6G13NU −20 ±8 2 2 265 ⎯ 186 ⎯ 133 ⎯ 260 30 1 0.59 0.45 ⎯ ⎯ 3.6 (5) VS-8 (mm) TPCF8B01 −20 ±8 −2.7 1.35 300 ⎯ 160 ⎯ 110 ⎯ ⎯ 20 1 0.49 ⎯ ⎯ ⎯ 6 (4) PS8 2.8 2.9 0.8 (mm) Pch + SBD SSM5H10TU 20 ±10 1.6 ⎯ 190 ⎯ 139 119 ⎯ ⎯ 260 20 0.7 ⎯ 0.39 ⎯ ⎯ ⎯ (3) SSM5H05TU 20 ±12 1.5 ⎯ ⎯ ⎯ 220 160 ⎯ ⎯ 125 12 0.5 ⎯ 0.43 0.39 ⎯ ⎯ (3) SSM5H08TU 20 ±12 1.5 ⎯ ⎯ ⎯ 220 160 ⎯ ⎯ 125 20 0.5 ⎯ ⎯ 0.45 ⎯ ⎯ (3) SSM5H03TU 12 ±12 1.4 ⎯ ⎯ ⎯ ⎯ 300 ⎯ 150 125 12 0.5 ⎯ 0.43 0.39 ⎯ ⎯ (3) SSM5H11TU 30 ±20 1.6 ⎯ ⎯ ⎯ ⎯ 182 ⎯ 122 180 30 0.7 ⎯ 0.41 ⎯ ⎯ ⎯ (3) SSM5H16TU 30 ±12 1.9 ⎯ 296 ⎯ 177 133 ⎯ ⎯ 123 30 0.8 ⎯ 0.45 ⎯ 0.36 ⎯ (3) SSM5H01TU 30 ±20 1.4 ⎯ ⎯ ⎯ ⎯ 450 ⎯ 200 106 20 0.5 ⎯ ⎯ 0.45 ⎯ ⎯ (3) UFV 0.7 2.1 2.0 (mm) SSM5H07TU 20 ±20 1.2 ⎯ ⎯ ⎯ ⎯ 540 ⎯ 300 36 12 0.5 ⎯ 0.43 0.39 ⎯ ⎯ (3) UDFN6 (mm) SSM6H15NU 30 ±10 4 2 124 71 ⎯ ⎯ 56 ⎯ 280 30 1 0.5 0.41 ⎯ ⎯ 2.8 (6) SMV 2.8 2.9 1.6 (mm) Nch + SBD SSM5H14F 30 ±12 3 ⎯ 138 ⎯ 94 78 ⎯ ⎯ 270 45 0.1 ⎯ ⎯ ⎯ 0.6 ⎯ (3)

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. ♦Internal Connections 8 6 1 2 3 Note: Some MOSFETs do not have a Zener diode between gate and source. ♦The internal connection diagrams only show the general configurations of the circuits. 46 2010/9 SCE0004K

RDS(ON) Max (mΩ) V F Max (V) Package Polarity Part Number VDSS (V) VGSS (V) ID (A) PD (W) VGS = 1.8 V VGS = 2.0 V VGS = 2.5 V VGS = 4.0 V VGS = 4.5 V VGS = 10 V Ciss (pF) VR (V) IO (A) IF = 1.0 A IF = 0.5 A IF = 0.3 A IF = 0.1 A Qg (nC) (typ.) Internal Connec- tions TPCP8AA1 20 ±12 1.6 ⎯ ⎯ ⎯ 140 105 ⎯ ⎯ 306 25 0.7 ⎯ 0.41 ⎯ ⎯ ⎯ (2) PS8 2.8 2.9 0.8 (mm) SOP-8 (mm) SOP Advance (mm) N-ch + SBD ◇: Monolithic

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. ♦Internal Connections (1) (2) (3) 8 6 1 2 3 7 5 12 3 7 5 Q1 Q2 ♦The internal connection diagrams only show the general configurations of the circuits. 47 2010/9 SCE0004K

(MOSFET + Switching Diodes) MOSFET Di RDS(ON) Max (mΩ) V F Max (V) Package Polarity Part Number VDSS (V) VGSS (V) ID (A) PD (W) VGS = 1.5 V VGS = 1.8 V VGS = 2.5 V VGS = 4.0 V VGS = 4.5 V VGS = 10 V Ciss (pF) VR (V) IO (A) trr (ns) IF = 1 mA IF = 10 mA IF = 0.1 A Qg (nC) (typ.) Internal Connec- tions UFV 0.7 2.1 2.0 (mm) N-ch + Switching diodes SSM5H90TU 20 ±10 2.4 ⎯ 157 110 80 65 ⎯ ⎯ 400 80 0.1 1.6 ⎯ ⎯ 1.2 ⎯ (1)

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. (MOSFET + Zener Diodes) MOSFET Ze-Di RDS(ON) Max (mΩ) V Z (V) I R (µA) V F Max (V) Package Polarity Part Number VDSS (V) VGSS (V) ID (A) PD (W) VGS = 1.8 V VGS = 2.0 V VGS = 2.5 V VGS = 4.0 V VGS = 4.5 V VGS = 10 V Ciss (pF) @IZ (mA) @VR (V) IF = 1.0 A IF = 0.5 A IF = 0.3 A Qg (nC) (typ.) Internal Connec- tions PS8 2.8 2.9 0.8 (mm) N-ch + Zener diodes TPCP8R01 60 ±20 2.0 ⎯ ⎯ ⎯ ⎯ 440 ⎯ 300 140 43 2 0.5 33 ⎯ ⎯ ⎯ ⎯ (2)
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. ♦Internal Connections (1) (2) ♦The internal connection diagrams only show the general configurations of the circuits. 48 2010/9 SCE0004K

Radio-Frequency Switching Power Transistors (2SA/2SC/TTA/TTC Series) VCEO (V) IC(A) 0.2 2SA1483 2SC3803 (◎) (45 V) (45 V) 0.8 2SA1426 (§) 2SA1356 2SC3419 (@) 2SA1204 2SC2884 (◎) HN4B101J (M)(V) 2SC5810 ( ◎) (NPN: 1.2 A) TPC6901A (M)( △) (PNP: 0.7 A) TPCP8901 (M)(P) (PNP: 0.8 A) TTA007 * TTC007 * (♠) TPC6604 * TPC6504 * (△) TPCP8801 (W)(P) 1.5 2SA2058 ( ♠ ) 2SA2065 (♠ ) 2SA966 2SC2236 (♣) 2SC5784 (♠ ) 2SA1203 2SC2883 (◎) 2SA2069 (◎) 2SC5819 (◎) TPC6503 (△) S3F56 ++ (△) 2 2SA1160 2SC2500 (♣ ) 2SC3225 (♣ ) 2SA1020 2SC2655 ( ♣) 2SA1430 2SC3670 ( §) TPCP8902 (M)(P) 2SC3673 ( §) 2SA1241 2SC3076 ( ◇) 2SA2066 ( ◎) (NPN+PNP) 2SC3964 (@) 2SA1382 ( ♣) 2SC5785 ( ◎) (NPN+PNP) : PNP-1.7A TPC6601 ( △) TPC6501 ( △) HN4B102J (M)(V) TPCP8701 (W)(P) TPC6602 ( △) (NPN+PNP) 2SA2060 ( ◎) TPCP8504 (P) 2SA1428 2SC3668 ( §) 2SA1680 2SC4408 ( ♣) 2SA1891 2SC5028 ( □) 2.5 2SA2061 (♠ ) 2SC5692 ( ♠) 2SC6033 ( ♠) TPCP8602 (P) 3 2SA2059 (◎) 2SC5976 (♠) 2SA1359 2SC3422 (@) 2SA1761 2SC4604 ( ♣) TPCP8F01 ($)(P) TPCP8H02 ($)(P) 2SA1869 2SC4935 ( ▲) 2SC4682 ( ♣ ) TPC6603 (△) 2SA1892 2SC5029 ( □) 2SC4683 ( §) TPC6502 ( △) (15 V) TPCP8505 (P) 2SC6126 (◎) 3.5 2SC5738 (♠ )

The products shown in bold are also manufactured in offshore fabs. *: New product
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. ++: Being planned Legend Package Through-Hole Package Ammo Packaging Surface-Mount Package Other Remarks (♣) LSTM ○ Available ( ♠) TSM (%) Darlington (§) MSTM ○ Available ( ◎) PW-Mini (#) Built-in zener diode (□) TPS ◎ Available only in tape packaging (◇) PW-Mold Part number in italic signifies built in Freewheel diode. (@) TO-126 × Not available ( ●) TO-220SM 2SA **/2SC**: Complementary (■) TPL ◎ Available only in tape packaging (△) VS-6 (&) 2-in-1 (transistor + diode) (▲) TO-220NIS × Not available (P) PS-8 ($) 2-in-1 (transistor + S-MOS) (◇) PW-Mold × Not available (V) SMV (W) 2-in-1 (NPN (or PNP) × 2) (▽) TO-3P(N) × Not available ( ♥) TFP (M) 2-in-1 (NPN + PNP) (▼) TO-3P(N)IS × Not available (※ ) TO-3P(L) × Not available (〒) TO-220SIS × Not available (◆) TO-92 ◎ Available only in tape packaging 49 2010/9 SCE0004K

Radio-Frequency Switching Power Transistors (2SA/2SC/TTA/TTC Series) (Continued) VCEO (V) IC(A) 4 2SC5714 ( ◎) 2SC5906 ( ♠) 2SC5703 ( ♠) 2SC5713 ( ◎) 2SC6125 ( ◎) TPCP8601 (P) 5 2SA1242 ( ◇) 2SC6062 ( ♠) 2SA1244 2SC3074 ( ◇) 2SA1357 (@) 2SA1905 2SC5076 ( □) 2SA1431 ( §) 2SA1931 2SC4881 ( ▲) 2SA1933 2SC5175 ( ■) 2SC3072 ( ◇) 2SA2097 ( ◇) 2SC3420 (@) 2SC5886 ( ◇) 2SC3671 ( §) 2SC5886A ( ◇) 2SC4684 ( ◇) TPCP8H01 ($)(P) 2SC4685 (@) 2SC6052 ( ◇) 2SA2183 ( 〒) (60 V) 7 2SC6000 ( ◇) 10 2SA1327A ( ▲) 2SA1887 2SC5000 ( ▲) 12 2SA1451A 2SC3709A ( ▲)

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. ++: Being planned Legend Package Through-Hole Package Ammo Packaging Surface-Mount Package Other Remarks (♣) LSTM ○ Available ( ♠) TSM (%) Darlington (§) MSTM ○ Available ( ◎) PW-Mini (#) Built-in zener diode (□) TPS ◎ Available only in tape packaging (◇) PW-Mold Part number in italic signifies built in Freewheel diode. (@) TO-126 × Not available ( ●) TO-220SM 2SA **/2SC**: Complementary (■) TPL ◎ Available only in tape packaging (△) VS-6 (&) 2-in-1 (transistor + diode) (▲) TO-220NIS × Not available (P) PS-8 ($) 2-in-1 (transistor + S-MOS) (◇) PW-Mold × Not available (V) SMV (W) 2-in-1 (NPN (or PNP) × 2) (▽) TO-3P(N) × Not available ( ♥) TFP (M) 2-in-1 (NPN + PNP) (▼) TO-3P(N)IS × Not available (※ ) TO-3P(L) × Not available (〒) TO-220SIS × Not available (◆) TO-92 ◎ Available only in tape packaging 50 2010/9 SCE0004K

(V) IC(A) 80 100 120 (140)/150 160 0.05 2SA1145 2SC2705 ( ♣ ) 2SA1360 2SC3423 (@) 2SA949 2SC2229 (♣ ) 0.1 2SC2230 ( ♣) 0.2 2SC3963 (@) 0.4 2SA817A 2SC1627A ( ♣ ) 2SA1202 2SC2882 ( ◎) 0.8 2SA965 2SC2235 (♣) 2SA1425 2SC3665 ( §)

1 TPCP8603 TPCP8507 (P)

TPCP8510 * (P) 2SC6061 ( ♠) 2SA1358 2SC3421 (@) 2SA1013 2SC2383 ( ♣) 1.5 2SC2073A ( ▲) 2SA1225 2SC2983 ( ◇) 2SA1408 2SC3621 (@) 2SC5154 ( □) 2SA2219 * 2SC6139 * (§) 2SA2220 * 2SC6140 * (■) TTA004 * TTC004 * (@) 2 2SA1315 2SC3328 (♣ ) 2SA1429 2SC3669 ( §) TPCP8501 (P) 2SC3474 ( ◇) 2SC6079 ( §) 2SA2206 2SC6124 (◎) 2.5 2SC6075 (□) 2SC6087 (□) 3 2SA1926 ( §) TTA003 ( ◇) 2SC6076 ( ◇) 2SC6077 ( ■) 2SC6078 (■) TTC009 ++ (▲) 5 2SA1934 2SC5176 ( ■) 2SC3303 ( ◇) 6 2SC4688 ( ▼) 2SA1939 2SC5196 ( ▽) 8 2SC4689 ( ▼) 2SA1940 2SC5197 ( ▽) 10 2SC4690 ( ▼) (140 V) 2SA1941 2SC5198 ( ▽) (140 V) 12 2SA1452A 2SC3710A ( ▲) 2SA1942 2SC5199 ( ※) 2SA1771 ( ▲)

18 TTA0001 * TTC0001 * (▽)

TTA0002 * TTC0002 * (※)

The products shown in bold are also manufactured in offshore fabs. *: New product
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. ++: Being planned Legend Package Through-Hole Package Ammo Packaging Surface-Mount Package Other Remarks (♣) LSTM ○ Available ( ♠) TSM (%) Darlington (§) MSTM ○ Available ( ◎) PW-Mini (#) Built-in zener diode (□) TPS ◎ Available only in tape packaging (◇) PW-Mold Part number in italic signifies built in Freewheel diode. (@) TO-126 × Not available ( ●) TO-220SM 2SA **/2SC**: Complementary (■) TPL ◎ Available only in tape packaging (△) VS-6 (&) 2-in-1 (transistor + diode) (▲) TO-220NIS × Not available (P) PS-8 ($) 2-in-1 (transistor + S-MOS) (◇) PW-Mold × Not available (V) SMV (W) 2-in-1 (NPN (or PNP) × 2) (▽) TO-3P(N) × Not available ( ♥) TFP (M) 2-in-1 (NPN + PNP) (▼) TO-3P(N)IS × Not available (※ ) TO-3P(L) × Not available (〒) TO-220SIS × Not available (◆) TO-92 ◎ Available only in tape packaging 51 2010/9 SCE0004K

Radio-Frequency Switching Power Transistors (2SA/2SC/TTA/TTC Series) (Continued) VCEO (V) IC(A) (180)/200 230 300 (370)/400 450 0.05 2SC5122 (♣ ) 2SC5307 ( ◎) 0.1 2SC2230A ( ♣ ) 2SA1432 2SC3672 ( §) 2SC3620 (@) 2SC4544 ( ▲) 2SC5027 ( □) 2SA1384 2SC3515 ( ◎)

0.3 TPCP8604 (P)

0.5 2SA1923 ( ◇) 2SA1924 (@) 2SA1925 ( □) 2SA1971 ( ◎) 2SA1972 ( ♣ ) 0.8 2SC6136 (◆) 2SC3075 ( ◇) 2SC5208 ( □) 2SC5458 ( ◇) 1 2SA1837 2SC4793 ( ▲) 2SC5930 ( §) 2SC5549 ( ♣ ) 2SA1932 2SC5174 ( ■) (285 V) 2SC5550 (@) 2SA2182 2SC6060 ( 〒) 2SC6010 ( §) 2SC6042 ( §) (285 V) (375 V) 2SC6034 ( §) 2SC6040 ( §) (285 V) (410 V) TTC005 * (◎) TPCP8508 ++ (P) (375 V) 1.5 2SC6142 * (◇) (375 V 1.5 A) TTC003 ( ◇) TTC13003L * ( ♣ ) 2 2SA1930 2SC5171 (▲) 2SC5075 ( □) 2SC5351 ( □) (180 V) (180 V) 2SC5548 ( ◇) 2SC5368 (@) 2SA2190 2SC6072 ( 〒) (370 V) (180 V) (180 V) 2SC5548A ( ◇) 2SA2034 ( ◇) 3 2SC5459 ( ▲) 5 2SC5172 ( ▲) 2SC5266A ( ■) 2SC5355 ( ‡) 2SC6138 ++ ( ◇) (375 V) 8 2SC5439 ( ▲) 10 2SC5352 ( ▽) 12 2SA2120 2SC5948 ( ▽) 15 2SA2121 2SC5949 ( ※ ) 2SA1943 2SC5200 ( ※ ) 2SA1962 2SC5242 ( ▽) 2SA1986 2SC5358 ( ▽) 2SA1987 2SC5359 ( ※ ) TTA1943 * TTC5200 * (※ )

The products shown in bold are also manufactured in offshore fabs. *: New product
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. ++: Being planned Legend Package Through-Hole Package Ammo Packaging Surface-Mount Package Other Remarks (♣) LSTM ○ Available ( ♠) TSM (%) Darlington (§) MSTM ○ Available ( ◎) PW-Mini (#) Built-in zener diode (□) TPS ◎ Available only in tape packaging (◇) PW-Mold Part number in italic signifies built in Freewheel diode. (@) TO-126 × Not available ( ●) TO-220SM 2SA **/2SC**: Complementary (■) TPL ◎ Available only in tape packaging (△) VS-6 (&) 2-in-1 (transistor + diode) (▲) TO-220NIS × Not available (P) PS-8 ($) 2-in-1 (transistor + S-MOS) (◇) PW-Mold × Not available (V) SMV (W) 2-in-1 (NPN (or PNP) × 2) (▽) TO-3P(N) × Not available ( ♥) TFP (M) 2-in-1 (NPN + PNP) (▼) TO-3P(N)IS × Not available (※ ) TO-3P(L) × Not available (〒) TO-220SIS × Not available (◆) TO-92 ◎ Available only in tape packaging 52 2010/9 SCE0004K

(V) IC(A) (550)/600 800 1000/(1200) 1500 0.02 0.05 2SC5201 ( ♣ ) 2SC5460 (@) 2SC4686 ( ▲) 2SC5466 ( ▲) 2SC4686A ( ▲) 2SC6127 ( ◇) (1200 V) 0.5 2SA1937 ( ◇) 2SA2142 ( ◇) 0.8 2SC3405 ( ◇) 2SC5465 ( ◇) 2SC5562 ( □) 2SC5684 ( ■) 1 2SA2184 ( ◇) (550 V) 3 2SC5353 (▲) 5 2SC5354 ( ▽) 10 2SC3307 ( ※)

The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. Legend Package Through-Hole Package Ammo Packaging Surface-Mount Package Other Remarks (♣) LSTM ○ Available ( ♠) TSM (%) Darlington (§) MSTM ○ Available ( ◎) PW-Mini (#) Built-in zener diode (□) TPS ◎ Available only in tape packaging (◇) PW-Mold Part number in italic signifies built in Freewheel diode. (@) TO-126 × Not available ( ●) TO-220SM 2SA **/2SC**: Complementary (■) TPL ◎ Available only in tape packaging (△) VS-6 (&) 2-in-1 (transistor + diode) (▲) TO-220NIS × Not available (P) PS-8 ($) 2-in-1 (transistor + S-MOS) (◇) PW-Mold × Not available (V) SMV (W) 2-in-1 (NPN (or PNP) × 2) (▽) TO-3P(N) × Not available ( ♥) TFP (M) 2-in-1 (NPN + PNP) (▼) TO-3P(N)IS × Not available (※ ) TO-3P(L) × Not available (〒) TO-220SIS × Not available (◆) TO-92 ◎ Available only in tape packaging 53 2010/9 SCE0004K

Low-Frequency Power Transistors (2SB/2SD/TTB/TTD Series) VCEO (V) IC(A) 20 30 40 50 60/(65) 2SD1224 (%)( ◇) 2SD1508 (%)(@) 2SD1631 (%)( §) 2SD1784 (%)( ◎) 2SD2481 (%)( □) 2SD2088 (#)(%)(♣) 2SD2695 (#)(%)( ♣) 2SD2352 ( ▲) 3 2SB907 2SD1222 (%)( ◇) 2SD2461 ( □) 2SB906 2SD1221 ( ◇) 2SB1375 2SD2012 ( ▲) 2SD2462 ( □) 2SB1640 2SD2525 ( ■) 2SD2353 ( ▲) TTB001 * ( ♥) TTB002 * ( ◇) 2SB1667 ( ●) 2SD2204 (#)(%)(▲) (65 V) 7 2SD1412A ( ▲)

The products shown in bold are also manufactured in offshore fabs. *: New product
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. Legend Package Through-Hole Package Ammo Packaging Surface-Mount Package Other Remarks (♣) LSTM ○ Available ( ♠) TSM (%) Darlington (§) MSTM ○ Available ( ◎) PW-Mini (#) Built-in zener diode (□) TPS ◎ Available only in tape packaging (◇) PW-Mold Part number in italic signifies built in Freewheel diode. (@) TO-126 × Not available ( ●) TO-220SM 2SA **/2SC**: Complementary (■) TPL ◎ Available only in tape packaging (△) VS-6 (&) 2-in-1 (transistor + diode) (▲) TO-220NIS × Not available (P) PS-8 ($) 2-in-1 (transistor + S-MOS) (◇) PW-Mold × Not available (V) SMV (W) 2-in-1 (NPN (or PNP) × 2) (▽) TO-3P(N) × Not available ( ♥) TFP (M) 2-in-1 (NPN + PNP) (▼) TO-3P(N)IS × Not available (※ ) TO-3P(L) × Not available (〒) TO-220SIS × Not available (◆) TO-92 ◎ Available only in tape packaging 54 2010/9 SCE0004K

(V) IC(A) 80 100 120 150/(160) 200

0.9 TPCP8L01(1) (&)(P)

1.5 2SB905 2SD1220 (◇) 2 2SB1067 2SD1509 (%)(@) 2SD2536 (#)(%)(♣) 3 2SB1495 2SD2257 (%)(▲) 2SD2092 (▲) 2SD2129 (%)(▲) 2SD2406 (▲) 5 2SD2079 (%)(▲) 2SD2526 (%)(■) 2SB1016A 2SD1407A (▲) 2SD2604 (#)(%)(▲) 7 2SB1020 A 2SD1415A (%)(▲) 2SB1018 A 2SD1411A (▲) 8 2SD2636 (%)(▽) (160 V) 10 2SD1947A (▲) 15 2SD1662 (%)(▽) 30 2SD1525 (%)(※) (1) NPN + HED (200 V/1 A)

The products shown in bold are also manufactured in offshore fabs.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. VCEO (V) IC(A) 250 400 450 15 2SD1314 (%)( ※)
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. Legend Package Through-Hole Package Ammo Packaging Surface-Mount Package Other Remarks (♣) LSTM ○ Available ( ♠) TSM (%) Darlington (§) MSTM ○ Available ( ◎) PW-Mini (#) Built-in zener diode (□) TPS ◎ Available only in tape packaging (◇) PW-Mold Part number in italic signifies built in Freewheel diode. (@) TO-126 × Not available ( ●) TO-220SM 2SA **/2SC**: Complementary (■) TPL ◎ Available only in tape packaging (△) VS-6 (&) 2-in-1 (transistor + diode) (▲) TO-220NIS × Not available (P) PS-8 ($) 2-in-1 (transistor + S-MOS) (◇) PW-Mold × Not available (V) SMV (W) 2-in-1 (NPN (or PNP) × 2) (▽) TO-3P(N) × Not available ( ♥) TFP (M) 2-in-1 (NPN + PNP) (▼) TO-3P(N)IS × Not available (※ ) TO-3P(L) × Not available (〒) TO-220SIS × Not available (◆) TO-92 ◎ Available only in tape packaging 55 2010/9 SCE0004K

Transistors for Power Amps (Drive Stage) Part Number IC V CEO P C f T NPN PNP (A) (V) (W) Tc = 25°C (♣Ta = 25°C) (MHz) Typ. (NPN/PNP) VCE (V) I C (A) Package 2SC1627A 2SA817A 0.4 80 ♣ 0.8 100 10 0.01 2SC2235 2SA965 0.8 120 ♣ 0.9 120 5 0.1 LSTM 2SC3665 2SA1425 0.8 120 ♣ 1 120 5 0.1 2SC6139 * 2SA2219 * 1.5 160 ♣ 1 100 10 0.1 MSTM 2SC5174 2SA1932 1 230 ♣ 1.8 100/70 10 0.1 2SC6140 * 2SA2220 * 1.5 160 ♣ 1.8 100 10 0.1 TPL 2SC3423 2SA1360 0.05 150 5 200 5 0.01 2SC3421 2SA1358 1 120 10 120 5 0.1 TO-126 TTC004 * TTA004 * 1.5 160 10 100 10 0.1 TO-126 2SC2983 2SA1225 1.5 160 15 100 10 0.1 PW-Mold 2SC4793 2SA1837 1 230 20 100/70 10 0.1 TO-220NIS 2SC6060 2SA2182 1 230 20 100/80 10 0.1 TO-220SIS 2SC5171 2SA1930 2 180 20 200 5/10 0.3 TO-220NIS 2SC6072 2SA2190 2 180 20 200 5 0.3 TO-220SIS

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product (Output Stage) Part Number IC V CEO P C f T NPN PNP (A) (V) (W) Tc = 25°C (♣Ta = 25°C) (MHz) Typ. (NPN/PNP) VCE (V) I C (A) Package 2SC5196 2SA1939 6 80 60 30 5 1 2SC5197 2SA1940 8 120 80 30 5 1 2SC5198 2SA1941 10 140 100 30 5 1 TTC0001 * TTA0001 * 18 160 150 30 10 1 2SC5242 2SA1962 15 230 130 30 5 1 2SC5358 2SA1986 15 230 150 30 5 1 2SC5948 2SA2120 12 200 200 30/25 5 1 TO-3P(N) 2SC5199 2SA1942 12 160 120 30 5 1 TTC0002 * TTA0002 * 18 160 180 30 10 1 2SC5200 2SA1943 15 230 150 30 5 1 TTC5200 * TTA1943 * 15 230 150 30 5 1 2SC5359 2SA1987 15 230 180 30 5 1 2SC5949 2SA2121 15 200 220 30/25 5 1 TO-3P(L)
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product 56 2010/9 SCE0004K

Transistors for MOS Gate Drivers/Compact Motor Drivers (2-in-1 Transistors) Absolute Maximum Ratings V CE(sat) VCEO IC I CP P C (Note 1) hFE VCE I C (V) I C I B Part Number Polarity (V) (A) (A) (mW) Min Max (V) (A) Max (A) (mA) Package Circuit Configuration (Top View) PNP −30 −1.0 −5 550 200 500 −2 −0.12 −0.2 −0.4 −13 HN4B101J NPN 30 1.2 5 550 200 500 2 0.12 0.17 0.4 13 PNP −30 −1.8 −8 750 200 500 −2 −0.2 −0.2 −0.6 −20 HN4B102J NPN 30 2 8 750 200 500 2 0.2 0.14 0.6 20 SMV PNP NPN 5 4 1 32 PNP −50 −0.7 −5 400 200 500 −2 −0.1 −0.23 −0.3 −10 TPC6901A NPN 50 1 5 400 400 1000 2 0.1 0.17 0.3 6 PNP −30 −1.7 −8 700 200 500 −2 −0.2 −0.2 −0.6 −20 TPC6902 NPN 30 2 8 700 200 500 2 0.2 0.14 0.6 20 VS-6 NPN PNP 6 4 1 32 PNP −50 −0.8 −5 830 200 500 −2 −0.1 −0.2 −0.3 −10 TPCP8901 NPN 50 1 5 830 400 1000 2 0.1 0.17 0.3 6 PNP −30 −2 −8 890 200 500 −2 −0.2 −0.2 −0.6 −20 TPCP8902 NPN 30 2 8 890 200 500 2 0.2 0.14 0.6 20 PS-8 NPN PNP 41 32 8 67 Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area = 645 mm , glass-epoxy, t = 1.6 mm) and is in single-device operation. Copper thickness: 35 mm for the TPC6901A and 70 mm for the other transistors

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. (1-in-1 Transistors) Absolute Maximum Ratings V CE(sat) VCEO IC P C (Note 1) hFE VCE I C (V) I C I B Part Number Polarity (V) (A) (mW) Min Max (V) (A) Max (A) (mA) Complementary Package Remarks 2SA2058 −10 −1.5 500 200 500 −2 −0.2 −0.19 −0.6 −20 2SC5755 2SA2065 −20 −1.5 500 200 500 −2 −0.15 −0.14 −0.5 −17 2SC5784 2SA2061 −20 −2.5 625 200 500 −2 −0.5 −0.19 −1.6 −53 2SC5735 TTA007 * −50 −1 700 200 500 −2 −0.1 −0.2 −0.3 −10 TTC007 * 2SA2056 PNP −50 −2 625 200 500 −2 −0.3 −0.20 −1.0 −33 2SC5692 2SC5755 10 2 500 400 1000 2 0.2 0.12 0.6 12 2SA2058 2SC5784 20 1.5 500 400 1000 2 0.15 0.12 0.5 10 2SA2065 2SC5738 20 3.5 625 400 1000 2 0.5 0.15 1.6 32 2SA2061 2SC6062 30 5 800 250 400 2 0.5 0.12 1.6 53 ⎯ (Note 2) TTC007 * 50 1 700 400 1000 2 0.1 0.12 0.3 6 TTA007 * 2SC5692 NPN 50 2.5 625 400 1000 2 0.3 0.14 1.0 20 2SA2056 TSM 2.8 2.9 1.6 (mm) 2SA2066 −10 −2 1000 200 500 −2 −0.2 −0.19 −0.6 −20 2SC5785 2SA2069 −20 −1.5 1000 200 500 −2 −0.15 −0.14 −0.5 −17 2SC5819 2SA2059 −20 −3 1000 200 500 −2 −0.5 −0.19 −1.6 −53 2SC5714 2SA2070 −50 −1 1000 200 500 −2 −0.1 −0.20 −0.3 −10 2SC5810 2SA2060 PNP −50 −2 1000 200 500 −2 −0.3 −0.20 −1.0 −33 2SC5712 2SC5785 10 2 1000 400 1000 2 0.2 0.12 0.6 12 2SA2066 2SC5819 20 1.5 1000 400 1000 2 0.15 0.12 0.5 10 2SC2069 2SC5714 20 4 1000 400 1000 2 0.5 0.15 1.6 32 2SA2059 2SC5810 50 1 1000 400 1000 2 0.1 0.17 0.3 6 2SA2070 2SC5712 50 3 1000 400 1000 2 0.3 0.14 1 20 2SA2060 2SC6126 NPN 50 3 1000 250 400 2 0.3 0.18 1 33 ⎯ PW-Mini 4.2 4.6 2.5 (mm) (Note 2) Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area = 645 mm , t = 1.6 mm). *: New product Note 2: Ultra-high-speed using by the Super Hi-Met process and Low V CE(sat) products.
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 57 2010/9 SCE0004K

Transistors for Switching Power Supplies (For AC/DC Converters) Absolute Maximum Ratings (Ta = 25°C) Part Number Applications VCBO (V) V CEO (V) I C (A) Pc (W) Tc = 25°C (♣ Ta = 25°C) Package 2SC3425 0.8 10 TO-126 2SC5075 500 400 2 1.3 ♣ TPS 2SC5930 1 1 ♣ MSTM 2SC6010 1 1 ♣ MSTM 2SC6034 285 1 1 ♣ MSTM 2SC5548 370 2 15 PW-Mold 2SC5548A 2 15 PW-Mold 2SC5208 0.8 1.3 ♣ TPS 2SC5458 0.8 10 PW-Mold 2SC4917 2 10 TO-126 TTC003 * 1.5 1.1 ♣ PW-Mold 2SC5459 3 25 TO-220NIS 2SC5266A 5 1.8 ♣ TPL 2SC5172 5 25 TO-220NIS 2SC5352 600 400 10 80 TO-3P(N) 2SC5351 2 1.3 ♣ TPS 2SC5368 650 450 2 10 TO-126 2SC6042 375 1 1 ♣ MSTM 2SC6040 410 1 1 ♣ MSTM 2SC6142 * 800 375 1.5 1.1 ♣ PW-Mold 2SC5562 0.8 1.3 ♣ TPS 2SC5353 3 25 TO-220NIS 2SC5354 5 100 TO-3P(N) 2SC3307 900 800 10 150 TO-3P(L) 2SC5439 Switching regulator 1000 450 8 30 TO-220NIS

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product 58 2010/9 SCE0004K

Transistors for High-Voltage Power Supplies (For DC/DC Converters) Absolute Maximum Ratings hFE V CE (sat) (V) Part Number VCEX (V) VCEO (V) IC (A) Pc (W) Min Max VCE (V) I C (A) Max IC (A) I B (mA) Package 2SC6061 150 120 1 0.625 (Note 1) 120 300 2 0.1 0.14 0.3 10 TSM TPCP8510 * 150 120 1 1.1 (Note 1) 120 300 2 0.1 0.14 0.3 10 PS-8 TPCP8507 150 120 1 1.25 (Note 1) 120 300 2 0.1 0.14 0.3 10 PS-8 2SC6076 160 80 3 10 (Note 2) 180 450 2 0.5 0.5 1 100 PW-Mold 2SC6124 160 80 2 1 (Note 1) 100 200 2 0.5 0.5 1 100 PW-Mini 2SC6079 160 80 2 1 (Note 3) 180 450 2 0.5 0.5 1 100 MSTM 2SC6075 160 80 2.5 1.3 (Note 3) 180 450 2 0.5 0.5 1 100 TPS 2SC6087 160 80 2.5 1.3 (Note 3) 100 200 2 0.5 0.5 1 100 TPS 2SC6077 160 80 3 1.8 (Note 3) 180 450 2 0.5 0.5 1 100 TPL 2SC6078 160 80 3 1.8 (Note 3) 100 200 2 0.5 0.5 1 100 TPL Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area = 645 mm , glass-epoxy, t = 1.6 mm). *: New product Note 2: Tc = 25°C Note 3: Ta = 25°C

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. (Transistors for Droppers) Absolute Maximum Ratings hFE V CE (sat) (V) Part Number VCEO (V) I C (A) Pc (W) Tc = 25°C Min Max VCE (V) I C (A) Max IC (A) I B (mA) Package 2SB906 −60 −3 20 60 200 −5 −0.5 −1.7 −3 −300 PW-Mold 2SB1667 −60 −3 25 60 300 −5 −0.5 −1.7 −3 −300 TO-220SM 2SA2183 −60 −5 20 200 500 −2 −0.5 −1 −1.6 −53 TO-220SIS TTB001 * −60 −3 36 100 250 −5 −0.5 −1.7 −3 −300 TFP TTB002 * −60 −3 25 100 250 −5 −0.5 −1.7 −3 −300 PW-Mold
Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product (High-Voltage Transistors) Absolute Maximum Ratings Part Number VCEO (V) I C (A) Pc (W) Package Circuit Configuration (Top View) Remarks 2SA1972 −400 −0.5 0.9 LSTM 2SA1971 −400 −0.5 1 PW-Mini TPCP8604 −400 −0.3 1 PS-8 SMD 2SA1925 −400 −0.5 1.2 TPS 2SA2184 −550 −1 1 PW-Mold SMD only 2SA2142 −600 −0.5 10 PW-Mold SMD only 2SC5122 400 0.05 0.9 LSTM 2SC5307 400 0.05 1 PW-Mini 2SC5201 600 0.05 0.9 LSTM 2SC6127 800 0.05 10 PW-Mold SMD only 2SC5460 800 0.05 10 TO-126 2SC5466 800 0.05 10 TO-220NIS 2SC4686A 1200 0.05 10 TO-220NIS 2SC5563 1500 0.02 10 TO-220NIS TPCP8604 PNP 41 32 8 67
The circuit configuration diagrams only show the general configurations of the circuits.
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Low Saturation Voltage Transistors (Small Surface-Mount Packages for Personal Equipments) Absolute Maximum Ratings hFE V CE (sat) (V) Part Number Configuration VCEO (V) IC (A) ICP (A) Pc (mW) (Note 1) Pc (mW) (Note 1)t = 10 s Min Max VCE (V) IC (A) Max IC (A) IB (mA) Marking Package 2SA2061 −20 −2.5 −4 625 1000 200 500 −2 −0.5 −0.19 −1.6 −53 WE TTA007 * −50 −1 −2 700 1100 200 500 −2 −0.1 −0.2 −0.3 −10 WH 2SA2056 PNP single −50 −2 −3.5 625 1000 200 500 −2 −0.3 −0.20 −1.0 −33 WF 2SC5755 10 2 3.5 500 750 400 1000 2 0.2 0.12 0.6 12 WL 2SC5738 20 3.5 6 625 1000 400 1000 2 0.5 0.15 1.6 32 WD 2SC5976 30 3 5 625 1000 250 400 2 0.3 0.14 1.0 33 WW 2SC5906 30 4 7 800 1250 200 500 2 0.5 0.2 1.6 53 WP TSM equivalent to SC-59 SOT-23 2SC6062 30 5 10 800 1250 250 400 2 0.5 0.12 1.6 53 WR TTC007 * 50 1 2 700 1100 400 1000 2 0.1 0.12 0.3 6 WG 2SC5692 50 2.5 4 625 1000 400 1000 2 0.3 0.14 1.0 20 WB 2SC6033 50 2.5 5 625 1000 250 400 2 0.3 0.18 1.0 33 WX 2SC5703 50 4 7 800 1250 400 1000 2 0.5 0.12 1.6 32 WA 2SC6061 NPN single 120 1 2 625 1000 120 300 2 0.1 0.14 0.3 10 WN HN4B102J PNP + NPN SMV 2SA2066 −10 −2 −3.5 1000 2000 200 500 −2 −0.2 −0.19 −0.6 −20 4E 2SA2059 −20 −3 −5 1000 2500 200 500 −2 −0.5 −0.19 −1.6 −53 4F 2SA2070 −50 −1 −2 1000 2000 200 500 −2 −0.1 −0.2 −0.3 −10 4C 2SA2060 −50 −2 −3.5 1000 2500 200 500 −2 −0.3 −0.20 −1.0 −33 4G 2SA2206 PNP single −80 −2 −4 1000 2500 100 200 −2 −0.5 −0.5 −1.0 −100 4K 2SC5785 10 2 3.5 1000 2000 400 1000 2 0.2 0.12 0.6 12 3E 2SC5713 10 4 7 1000 2500 400 1000 2 0.5 0.15 1.6 32 2C 2SC6125 20 4 8 1000 2500 180 390 2 0.5 0.2 1.6 53 4L 2SC5714 20 4 7 1000 2500 400 1000 2 0.5 0.15 1.6 32 2E 2SC5810 50 1 2 1000 2000 400 1000 2 0.1 0.17 0.3 6 3C 2SC6126 50 3 6 1000 2500 250 400 2 0.3 0.18 1.0 33 4M 2SC5712 50 3 5 1000 2500 400 1000 2 0.3 0.14 1 20 2A 2SC6124 NPN single 80 2 4 1000 2500 100 200 2 0.5 0.5 1.0 100 4J PW-Mini equivalent to SC-62 SOP-89 TPC6501 10 2 3.5 800 1600 400 1000 2 0.2 0.12 0.6 12 H2A TPC6502 50 3 5 800 1600 400 1000 2 0.3 0.14 1 20 H2B S3F61 ++ 10 4 6 800 1600 400 1000 2 0.5 0.15 1.6 32 ⎯ S3F62 ++ 20 4 6 800 1600 400 1000 2 0.5 0.15 1.6 32 ⎯ TPC6504 * NPN single 50 1 2 800 1600 400 1000 2 0.1 0.17 0.3 6 H2D TPC6601 −50 −2 −3.5 800 1600 200 500 −2 −0.3 −0.20 −1.0 −33 H3A TPC6602 −10 −2 −3.5 800 1600 200 500 −2 −0.2 −0.19 −0.6 −20 H3B TPC6603 −20 −3 −5 800 1600 200 500 −2 −0.5 −0.19 −1.6 −53 H3C TPC6604 * PNP single −50 −1 −2 800 1600 200 500 −2 −0.1 −0.23 −0.3 −10 H3D TPC6701 NPN/dual 50 1 2 660 ( 注 2) ⎯ 400 1000 2 0.1 0.17 0.3 6 H4A TPC6902 PNP + NPN VS-6 (equivalent to TSOP-6) Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area = 645 mm , glass-epoxy, t = 1.6 mm). *: New product Note 2: Total loss of dual-device operation ++: Being planned

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Absolute Maximum Ratings hFE V CE (sat) (V) Part Number Configuration VCEO (V) IC (A) ICP (A) Pc (mW) (Note 1) Pc (mW) (Note 1)t = 10 s Min Max VCE (V) IC (A) Max IC (A) IB (mA) Marking Package 2SA2097 −50 −5 −10 20 (Note 3) ⎯ 200 500 −2 −0.5 −0.27 −1.6 −53 A2097 2SA1241 −50 −2 −3 10 (Note 3) ⎯ 70 240 −2 −0.5 −0.5 −1 −50 A1241 2SA1244 −50 −5 −8 20 (Note 3) ⎯ 70 240 −1 −1 −0.4 −3 −150 A1244 TTA003 * PNP single -80 -3 -5 10 (Note 3) ⎯ 100 200 -2 -0.5 -0.5 -1 -100 A003 2SC6076 80 3 5 10 (Note 3) ⎯ 180 450 2 0.5 0.5 1 100 C6076 2SC5886 50 5 10 20 (Note 3) ⎯ 400 1000 2 0.5 0.22 1.6 32 C5886 2SC5886A 50 5 10 20 (Note 3) ⎯ 400 1000 2 0.5 0.22 1.6 32 C5886A 2SC3076 50 2 3 10 (Note 3) ⎯ 70 240 2 0.5 0.5 1 50 C3076 2SC3474 80 2 3 20 (Note 3) ⎯ 500 ⎯ 1 0.4 0.5 0.3 1 C3474 2SC6052 20 5 7 10 (Note 3) ⎯ 180 390 2 0.5 0.2 1.6 53 C6052 2SC3074 50 5 8 20 (Note 3) ⎯ 70 240 1 1 0.4 3 150 C3074 S3H32 ++ 50 5 7 20 (Note 3) ⎯ 200 500 2 0.5 0.2 1.6 53 2SC3303 80 5 8 20 (Note 3) ⎯ 70 240 1 1 0.4 3 150 C3303 2SC6000 NPN single 50 7 10 20 (Note 3) ⎯ 250 400 2 2.5 0.18 2.5 83 C6000 PW-Mold SC-63 TPCP8501 100 2 4 1300 3300 100 300 2 0.3 0.2 1 33 8501 TPCP8507 120 1 2 1250 3000 120 300 2 0.1 0.14 0.3 10 8507 TPCP8510 * 120 1 2 1100 2250 120 300 2 0.1 0.14 0.3 10 8510 TPCP8505 50 3 5 1250 3000 400 1000 2 0.3 0.14 1 20 8505 TPCP8504 NPN single 10 2 3.5 1200 2800 400 1000 2 0.2 0.12 0.6 12 8504 TPCP8601 −20 −4 −7 1300 3300 200 500 −2 −0.6 −0.19 −2 −67 8601 TPCP8603 −120 −1 −2 1250 3000 120 300 −2 −0.1 −0.2 −0.3 −10 8603 TPCP8602 PNP single −50 −2.5 −4 1250 3000 200 500 −2 −0.3 −0.2 −1 −33 8602 TPCP8701 NPN/dual 50 3 5 940 1770 400 1000 2 0.3 0.14 1 20 8701 TPCP8H01 (Note 2) 50 5 7 1000 2000 250 400 2 0.5 0.13 1.6 53 8H01 TPCP8H02 (Note 2) NPN + S-MOS 30 3 5 1000 2000 250 400 2 0.3 0.14 1 33 8H02 TPCP8F01 (Note 2) PNP + S-MOS −20 −3 −5 1000 ⎯ 200 500 −2 −0.5 −0.19 −1.6 −53 8F01 TPCP8902 * PNP + NPN ±30 ±2 ±8 890 1670 200 500 ±2 ±0.2 −0.2/0.14 ±0.6 ±20 8902 TPCP8L01 (Note 4) NPN Darlington + HED 120 0.9 2 900 ⎯ 2000 9000 2 1 1.5 1 1 8L01 TPCP8G01 (Note 5) * PNP + Pch −20 −3 −5 940 1770 200 500 −2 −0.5 −0.19 −1.6 −53 8G01 PS-8 Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area = 645 mm , glass-epoxy, t = 1.6 mm). *: New product Note 2: Built-in SBD, V RRM = 30 V, IO = 0.7 A, VF = 0.4 V (MAX)@IF = 0.5 A, IR = 100 µA (MAX)@VR = 10 V ++: Being planned Note 3: Tc = 25°C Note 4: Built-in HED, V RRM = 200 V, IF(AV) = 1 A Note 5: Pch MOS V DSS = −20 V, ID = −2 A, RON = 130 mΩ Max

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(Power-Mold Transistors (SC-63/64) ) Absolute Maximum Ratings (Ta = 25°C) VCEO I C P C PC Equivalent Product Remarks Part Number Applications (V) (A) (W) (W) Complementary 2SA1225 −160 −1.5 1.0 15 2SC2983 ⎯ 2SC2983 Power amplification for driver 160 1.5 1.0 15 2SA1225 ⎯ 2SA1241 −50 −2.0 1.0 10 2SC3076 2SA1892 2SC3076 Power amplification 50 2.0 1.0 10 2SA1241 2SC5029 2SA1242 −20 −5.0 1.0 10 2SC3072 ( ) 2SA1893 2SC3072 20 5.0 1.0 10 2SA1242 ( ) 2SC3420 2SC4684 Strobe flash, power amplification 20 5.0 1.0 10 ⎯ 2SC5030 High β 2SA1244 −50 −5.0 1.0 20 2SC3074 2SA1905 2SC3074 50 5.0 1.0 20 2SA1244 2SC5076 2SA2097 −50 −5.0 1.0 20 ⎯ ⎯ High β 2SC5886 50 5.0 1.0 20 ⎯ ⎯ High β 2SC5886A High-current switching 50 5 1.0 20 ⎯ ⎯ High β, VCBO = 120 V 2SB905 −150 −1.5 1.0 10 2SD1220 2SA1408 2SD1220 TV vertical output, TV audio output (B) class 150 1.5 1.0 10 2SB905 2SC3621 2SB906 −60 −3.0 1.0 20 2SD1221 2SB834 2SD1221 60 3.0 1.0 20 2SB906 2SD880 TTB002 * −60 −3.0 1.0 30 ⎯ ⎯ TTA003 * Low-frequency power amplification 2SB907 −40 −3.0 1.0 15 2SD1222 ⎯ Darlington type 2SD1222 40 3.0 1.0 15 2SB907 ⎯ Darlington type 2SC6076 Switching, power amplification 80 3 ⎯ 10 ⎯ ⎯ 2SB908 −80 −4.0 1.0 15 2SD1223 ⎯ Darlington type 2SD1223 Switching, power amplification 80 4.0 1.0 15 2SB908 ⎯ Darlington type 2SC3474 Switching, solenoid drive 80 2.0 1.0 20 ⎯ ⎯ 2SC3303 Switching 80 5.0 1.0 20 ⎯ 2SC3258 2SA2034 −400 −2 1.0 15 ⎯ ⎯ 2SA2142 −600 −0.5 ⎯ 15 ⎯ ⎯ 2SC3075 400 0.8 1.0 10 ⎯ 2SC5208 2SC5458 400 0.8 1.0 10 ⎯ ⎯ 2SC5548 370 2 1.0 15 ⎯ ⎯ 2SC5548A 400 2 1.0 15 ⎯ ⎯ 2SC6127 800 0.05 1.0 10 ⎯ ⎯ 2SC3405 800 0.8 1.0 20 ⎯ ⎯ 2SC5465 800 0.8 1.0 20 ⎯ ⎯ 2SC6142 * 375 1.5 1.1 ⎯ ⎯ ⎯ TTC003 * High-voltage switching 400 1.5 1.1 ⎯ ⎯ ⎯ 2SC6000 50 7 1.0 20 ⎯ ⎯ 2SC6052 High-speed switching 20 5 1.0 10 ⎯ ⎯ : Tc = 25°C *: New product : hFE classification varies

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(PW-Mini Transistors (SC-62) ) Absolute Maximum Ratings Electrical Characteristics Pc Pc Pc V CEO IC hFE V CE (sat) f T Part Number (W) (W) (W) (V) (A) V CE IC (V) IC IB (MHz) VCE IC Marking Equivalent to TO-92MOD (TO-92) NPN PNP (Note 1) (Note 2) Min Max (V) (mA) Max (mA) (mA) Typ. (V) (mA) NPN PNP NPN PNP Remarks/

Applications

2SC2881 2SA1201 0.5 1.0 ⎯ 120 0.8 80 240 5 100 1.0 500 50 120 5 100 C□ D□ 2SC2235 2SA965 Audio driver 2SC2882 2SA1202 0.5 1.0 ⎯ 80 0.4 70 240 2 50 0.4 200 20 120/100 10 10 E □ F□ (2SC1627) (2SA817) Low saturation 2SC2883 2SA1203 0.5 1.0 ⎯ 30 1.5 100 320 2 500 2.0 1500 30 120 2 500 G□ H□ 2SC2236 2SA966 Audio driver 2SC3515 2SA1384 0.5 1.0 ⎯ 300 0.1 30 150 10 20 0.5 20 2 60 10 20 I □ J□ (2SC2551) (2SA1091) Low saturation 2SC3803 2SA1483 0.5 1.0 ⎯ 45 0.2 40 240 1 10 0.3 100 10 200 10 10 V □ W□ ⎯ ⎯ Low saturation ⎯ 2SA1734 0.5 1.0 ⎯ 30 1.2 120 400 2 100 0.5 700 35 100 2 100 ⎯ LB ⎯ ⎯ Low saturation ⎯ 2SA1971 0.5 1.0 ⎯ −400 −0.5 140 400 −5 −100 −1.0 −100 −10 35 −5 −50 ⎯ AL ⎯ 2SA1972 High-voltage 2SD1784 ⎯ 0.5 1.0 ⎯ 30 1.5 4000 ⎯ 2 150 1.5 1000 1 ⎯ ⎯ ⎯ XN ⎯ 2SD1140 ⎯ Driver (Darlington) 2SC5785 ⎯ ⎯ ⎯ 1 10 2 400 1000 2 200 0.12 600 12 ⎯ ⎯ ⎯ 3E ⎯ ⎯ ⎯ Low saturation ⎯ 2SA2066 ⎯ ⎯ 1 −10 −2 200 500 −2 −200 −0.19 −600 −20 ⎯ ⎯ ⎯ ⎯ 4E ⎯ ⎯ Low saturation 2SC5713 ⎯ ⎯ ⎯ 1 10 4 400 1000 2 500 0.15 1600 32 ⎯ ⎯ ⎯ 2C ⎯ ⎯ ⎯ Low saturation 2SC5819 ⎯ ⎯ ⎯ 1 20 1.5 400 1000 2 150 0.12 500 10 ⎯ ⎯ ⎯ 3D ⎯ ⎯ ⎯ Low saturation ⎯ 2SA2069 ⎯ ⎯ 1 −20 −1.5 200 500 −2 −150 −0.14 −500 −17 ⎯ ⎯ ⎯ ⎯ 4D ⎯ ⎯ Low saturation 2SC6125 ⎯ ⎯ ⎯ 1 20 4 180 390 2 500 0.20 1600 53 ⎯ ⎯ ⎯ 4L ⎯ ⎯ ⎯ High-speed switching 2SC5714 ⎯ ⎯ ⎯ 1 20 4 400 1000 2 500 0.15 1600 32 ⎯ ⎯ ⎯ 2E ⎯ ⎯ ⎯ Low saturation ⎯ 2SA2059 ⎯ ⎯ 1 −20 −3 200 500 −2 −500 −0.19 −1600 −53 ⎯ ⎯ ⎯ ⎯ 4F ⎯ ⎯ Low saturation 2SC6126 ⎯ ⎯ ⎯ 1 50 3 250 400 2 300 0.18 1000 33 ⎯ ⎯ ⎯ 4M ⎯ ⎯ ⎯ High-speed switching 2SC5712 ⎯ ⎯ ⎯ 1 50 3 400 1000 2 300 0.14 1000 20 ⎯ ⎯ ⎯ 2A ⎯ ⎯ ⎯ Low saturation ⎯ 2SA2060 ⎯ ⎯ 1 −50 −2 200 500 −2 −300 −0.20 −1000 −33 ⎯ ⎯ ⎯ ⎯ 4G ⎯ ⎯ Low saturation 2SC5810 ⎯ ⎯ ⎯ 1 50 1 400 1000 2 100 0.17 300 6 ⎯ ⎯ ⎯ 3C ⎯ ⎯ ⎯ Low saturation ⎯ 2SA2070 ⎯ ⎯ 1 −50 −1 200 500 −2 −100 −0.2 −300 −10 ⎯ ⎯ ⎯ ⎯ 4C ⎯ ⎯ Low saturation 2SD2686 ⎯ ⎯ ⎯ 1 60 ±10 1 2000 ⎯ 2 1000 1.5 1000 1 ⎯ ⎯ ⎯ 3H ⎯ ⎯ ⎯ Darlington 2SC6124 2SA2206 ⎯ ⎯ 1 80 2 100 200 2 500 0.5 1000 100 150/100 2 500 4J 4K ⎯ ⎯ Low saturation TTC005 * ⎯ ⎯ ⎯ 1.1 285 1 100 200 5 100 1.0 600 75 ⎯ ⎯ ⎯ 4N ⎯ ⎯ ⎯ High-voltage Note: The h FE classification that appears instead of the □ shown in the Marking column will be one of the following: A, B, C, D, O, R or Y, according to the rank. *: New product Note 1: The rating applies when the transistor is mounted on a ceramic board (250 mm x 0.8 mm). Note 2: The rating applies when the transistor is mounted on a glass-epoxy board (645 mm x 1.6 mm).

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. (TSM Transistors) Part Number Absolute Maximum Ratings hFE V CE (sat) (V) NPN V CEO (V) IC (A) I CP (A) Pc (mW) (Note1) Pc (mW) (Note 1) t = 10s Min Max VCE (V) IC (A) Max IC (A) I B (mA) Marking Remarks/

2SA2061 −20 −2.5 −4 625 1000 200 500 −2 −0.5 −0.19 −1.6 −53 WE Low saturation TTA007 * −50 −1 −2 700 1100 200 500 −2 −0.1 −0.2 −0.3 −10 WH Low saturation 2SA2056 −50 −2 −3.5 625 1000 200 500 −2 −0.3 −0.20 −1.0 −33 WF Low saturation 2SC5755 10 2 3.5 500 750 400 1000 2 0.2 0.12 0.6 12 WL Low saturation 2SC5738 20 3.5 6 625 1000 400 1000 2 0.5 0.15 1.6 32 WD Low saturation 2SC5976 30 3 5 625 1000 250 400 2 0.3 0.14 1.0 33 WW Ultra-high-speed switching Low saturation voltage 2SC5906 30 4 7 800 1250 200 500 2 0.5 0.2 1.6 53 WP Ultra-high-speed switching Low saturation voltage 2SC6062 30 5 10 800 1250 250 400 2 0.5 0.12 1.6 53 WR Ultra-high-speed switching Low saturation voltage TTC007 * 50 1 2 700 1100 400 1000 2 0.1 0.12 0.3 6 WG Low saturation 2SC5692 50 2.5 4 625 1000 400 1000 2 0.3 0.14 1.0 20 WB Low saturation 2SC6033 50 2.5 5 625 1000 250 400 2 0.3 0.18 1.0 33 WX Ultra-high-speed switching Low saturation voltage 2SC5703 50 4 7 800 1250 400 1000 2 0.5 0.12 1.6 32 WA Low saturation 2SD2719 60 ± 10 0.8 3 800 1250 2000 ⎯ 2 1.0 1.5 1 1 WV Darlington 2SC6061 120 1 2 625 1000 120 300 2 0.1 0.14 0.3 10 WN Low saturation Note 1: The rating applies when the transistor is mounted on an FR4 board (Cu area = 645 mm , glass-epoxy, t = 1.6 mm). *: New product

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Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Bipolar Transistors Absolute Maximum Ratings (Ta = 25°C) VCEO I C P C T j Part Number Package Applications (V) (mA) (mW) (°C) Marking TO-92 Equivalent Product Remarks (Mini Transistors) 2SC2714 FM-band radio-frequency amps 30 20 150 125 Q □ 2SC1923 fT = 550 MHz 2SC2715 AM-band frequency converter, FM-band IF amps 30 50 150 125 R □ 2SC380TM 2SC2716 AM-band radio-frequency amps 30 100 150 125 F □ 2SC941TM 2SC3123 VHF-band frequency converters, RF amps 20 50 150 125 HE 2SC3136 f T = 1.4 GHz 2SC5064 VHF/UHF-band low-noise amps 12 30 150 125 MA □ ⎯ fT = 7 GHz 2SC5084 VHF/UHF-band low-noise amps 12 80 150 125 MC □ ⎯ fT = 7 GHz 2SC5089 VHF/UHF-band low-noise amps 10 40 150 125 MD □ ⎯ fT = 10 GHz 2SC5106 VHF/UHF-band oscillators 10 30 150 125 MF □ ⎯ fT = 6 GHz 2SC5109 VHF/UHF-band oscillators 10 60 150 125 MG □ ⎯ fT = 5 GHz MT3S03A VHF/UHF-band low-voltage operation, low phase noise 5 40 150 125 MR ⎯ fT = 10 GHz MT3S04A VHF/UHF-band low-voltage operation, low phase noise 5 40 150 125 AE ⎯ fT = 7 GHz MT3S106 S-MINI 2.5 2.9 1.5 VHF/UHF-band low noise, low-distortion amps 6 80 700 (Note 1) 150 R2 ⎯ f T = 13 GHz 2SC5087 VHF/UHF-band low-noise amps 12 80 150 125 C □ ⎯ fT = 7 GHz 2SC5087R VHF/UHF-band low-noise amps 12 80 150 125 ZP ⎯ f T = 8 GHz 2SC5092 VHF/UHF-band low-noise amps 10 40 150 125 D □ ⎯ fT = 10 GHz MT4S03A VHF/UHF-band low-voltage operation, low phase noise 5 40 150 125 MR ⎯ fT = 10 GHz MT4S04A SMQ 2.9 2.9 1.5 VHF/UHF-band low-voltage operation, low phase noise 5 40 150 125 AE ⎯ fT = 7 GHz 2SC4215 FM-band radio-frequency amps 30 20 100 125 Q □ 2SC1923 f T = 550 MHz 2SC4250 VHF-band frequency converters, RF amps 20 50 100 125 HE 2SC3136 f T = 1.4 GHz 2SC5065 VHF/UHF-band low-noise amps 12 30 100 125 MA □ ⎯ fT = 7 GHz 2SC5085 VHF/UHF-band low-noise amps 12 80 100 125 MC □ ⎯ fT = 7 GHz 2SC5090 VHF/UHF-band low-noise amps 10 40 100 125 MD □ ⎯ fT = 10 GHz 2SC5095 VHF/UHF-band low-noise amps 10 15 100 125 ME □ ⎯ fT = 10 GHz 2SC5107 VHF/UHF-band oscillators 10 30 100 125 MF □ ⎯ fT = 6 GHz 2SC5110 VHF/UHF-band oscillators 10 60 100 125 MG □ ⎯ fT = 5 GHz 2SC5463 VHF/UHF-band low-noise amps 12 60 100 125 MX/MY ⎯ fT = 7 GHz MT3S03AU VHF/UHF-band low-voltage operation, low phase noise 5 40 100 125 MR ⎯ fT = 10 GHz MT3S04AU VHF/UHF-band low-voltage operation, low phase noise 5 40 100 125 AE ⎯ fT = 7 GHz MT3S16U USM 2.1 2.0 1.25 UHF-band low-voltage oscillators and amps 5 60 100 125 T4 ⎯ f T = 4 GHz □: Denotes a hFE class. Note 1: Mounted on a ceramic board

The products shown in bold are also manufactured in offshore fabs.
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Absolute Maximum Ratings (Ta = 25°C) VCEO I C P C T j Part Number Package Applications (V) (mA) (mW) (°C) Marking TO-92 Equivalent Product Remarks 2SC5088 VHF/UHF-band low-noise amps 12 80 100 125 MC □ ⎯ fT = 7 GHz 2SC5319 VHF/UHF-band low-noise amps 5 20 100 125 MT ⎯ fT = 16 GHz MT4S23U * VHF/UHF-band low-noise amps 5 40 170 (Note 1) 150 MT ⎯ f T = 16 GHz MT4S03AU VHF/UHF-band low-voltage operation, low phase noise 5 40 100 125 MR ⎯ fT = 10 GHz MT4S03BU * VHF/UHF-band low-noise amps 5 40 175 (Note 1) 150 MR ⎯ f T = 12 GHz MT4S06U VHF/UHF-band low-voltage operation, low noise 5 15 60 125 AC ⎯ fT = 10 GHz MT4S32U USQ 2.1 2.0 1.25 VHF/UHF-band low-noise amps 4.5 15 67.5 125 U4 ⎯ f T = 16 GHz 2SC4915 FM-band radio-frequency amps 30 20 100 125 Q □ 2SC1923 fT = 550 MHz 2SC5066 VHF/UHF-band low-noise amps 12 30 100 125 M1/M2 ⎯ fT = 7 GHz 2SC5086 VHF/UHF-band low-noise amps 12 80 100 125 M5/M6 ⎯ fT = 7 GHz 2SC5091 VHF/UHF-band low-noise amps 10 40 100 125 M7/M8 ⎯ fT = 10 GHz 2SC5096 VHF/UHF-band low-noise amps 10 15 100 125 M9/MA ⎯ fT = 10 GHz 2SC5108 VHF/UHF-band oscillators 10 30 100 125 MB/MC ⎯ fT = 6 GHz 2SC5111 VHF/UHF-band oscillators 10 60 100 125 MD/ME ⎯ fT = 5 GHz 2SC5322 VHF/UHF-band low-noise amps 5 10 100 125 MU ⎯ 2SC5464 VHF/UHF-band low-noise amps 12 60 100 125 MX/MY ⎯ fT = 7 GHz MT3S03AS VHF/UHF-band low-voltage operation, low phase noise 5 40 100 125 MR ⎯ fT = 10 GHz MT3S04AS VHF/UHF-band low-voltage operation, low phase noise 5 40 100 125 AE ⎯ fT = 7 GHz MT3S06S SSM 1.6 1.6 0.8 VHF/UHF-band low-voltage operation, low noise 5 15 60 125 AC ⎯ fT = 10 GHz 2SC4250FV VESM 1.2 1.2 0.8 VHF-band frequency converters, RF amps 20 50 150 (Note 1) 125 HE 2SC3136 f T = 1.4 GHz MT3S03AFS VHF/UHF-band low-voltage operation, low phase noise 5 40 85 (Note 1) 125 00 ⎯ fT = 10 GHz MT3S04AFS VHF/UHF-band low-voltage operation, low phase noise 5 40 85 (Note 1) 125 01 ⎯ fT = 7 GHz MT3S05FS VHF/UHF-band low-voltage operation, low phase noise 5 40 85 (Note 1) 125 02 ⎯ fT = 4.5 GHz MT3S06FS VHF/UHF-band low-voltage operation, low noise 5 15 85 (Note 1) 125 03 ⎯ fT = 10 GHz MT3S07FS VHF/UHF-band low-voltage operation, low noise 5 25 85 (Note 1) 125 04 ⎯ fT = 12 GHz MT3S11FS VHF/UHF-band low-voltage operation, low phase noise 6 40 85 (Note 1) 125 08 ⎯ f T = 6 GHz MT3S12FS VHF/UHF-band low-voltage operation, low phase noise 6 40 85 (Note 1) 125 09 ⎯ fT = 7 GHz MT3S14FS VHF/UHF-band low-voltage operation, low noise 2.5 30 85 (Note 1) 125 0H ⎯ fT = 11 GHz MT3S16FS UHF-band low-voltage oscillators and amps 5 60 85 (Note 1) 125 0K ⎯ f T = 4 GHz MT3S35FS VHF/UHF-band low-noise amps 4.5 24 100 (Note 1) 150 20 ⎯ fT = 20 GHz MT3S36FS VHF/UHF-band low-noise amps 4.5 36 100 (Note 1) 150 21 ⎯ fT = 19 GHz MT3S37FS VHF/UHF-band low-noise amps 4.5 50 100 (Note 1) 150 22 ⎯ fT = 19 GHz MT3S41FS fSM 1.0 0.6 0.8 VHF/UHF-band low-noise amps 4.5 80 100 (Note 1) 150 26 ⎯ f T = 15 GHz MT3S11CT CST3 0.6 1.0 VHF/UHF-band low-voltage operation, low phase noise 6 40 105 (Note 1) 125 08 ⎯ f T = 6 GHz MT3S15TU * VHF/UHF-band low-noise amps, low-distortion amps 6 80 900 (Note 2) 150 T3 ⎯ f T = 11.5 GHz MT3S19TU * VHF/UHF-band low-noise amps, low-distortion amps 6 80 900 (Note 2) 150 T6 ⎯ f T = 11 GHz MT3S20TU * UFM 2.1 2.0 1.7 VHF/UHF-band low-noise amps, low-distortion amps 12 80 900 (Note 2) 150 MU ⎯ f T = 7 GHz MT3S19 * S-MINI 2.5 2.9 1.5 VHF/UHF-band low-noise amps, low-distortion amps 6 80 800 (Note 2) 150 T6 ⎯ f T = 12 GHz MT3S20P * VHF/UHF-band low-noise amps, low-distortion amps 12 80 1800 (Note 2) 150 MU ⎯ f T = 7 GHz MT3S21P * VHF/UHF-band low-noise amps, low-distortion amps 6 80 1800 (Note 2) 150 T2 ⎯ f T = 9 GHz MT3S22P * Pw-Mini 4.2 4.6 2.5 VHF/UHF-band low-noise amps, low-distortion amps 6 80 1800 (Note 2) 150 T5 ⎯ f T = 8.5 GHz □: Denotes a hFE class. *: New product Note 1: When mounted on a glass-epoxy PCB board Note 2: Mounted on a ceramic board

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Dual Radio-Frequency Bipolar Transistor Absolute Maximum Ratings (Ta = 25°C) Part Number Package VCEO (Q1/Q2) (V) IC (Q1/Q2) (mA) PC (mW) Structure (Q1/Q2) fT (Q1/Q2) (GHz) ♦Internal Connections Marking MT6L63FS 5/6 25/40 110 (Note 1) MT3S07FS/MT3S11FS 12/6 18 MT6L64FS 4.5/6 24/40 110 (Note 1) MT3S35FS/MT3S11FS 19.5/6 19 MT6L65FS 4.5/6 36/40 110 (Note 1) MT3S36FS/MT3S11FS 20/6 1F MT6L67FS 4.5/6 36/80 110 (Note 1) MT3S36FS/MT3S106FS 20/8.5 1J MT6L68FS 5/6 15/40 110 (Note 1) MT3S06FS/MT3S11FS 10/6 1K MT6L71FS 5/6 25/40 105 (Note 1) MT3S07FS/MT3S11AFS 12/6 1W MT6L72FS 4.5/6 36/40 105 (Note 1) MT3S36FS/MT3S11AFS 19/6 1X MT6L75FS 5/6 25/80 110 (Note 1) MT3S07FS/MT3S106FS 12/8.5 52 MT6L76FS 5/6 15/80 110 (Note 1) MT3S06FS/MT3S106FS 10/8.5 53 MT6L77FS 6/6 40/80 110 (Note 1) MT3S11FS/MT3S106FS 6/8.5 54 MT6L78FS fS6 1.0 1.0 0.8 6/6 40/40 105 (Note 1) MT3S11FS/MT3S11AFS 6/6 55 MT6L77FST fS6T 0.9 1.0 0.7 6/6 40/80 140 MT3S11FS/MT3S106FS 6/8.5 Q1 Q2 PC: Total power dissipation ♦The internal connection diagrams only show the general configurations of the circuits. Note 1: When mounted on a glass-epoxy PCB board

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. SiGe HBTs Absolute Maximum Ratings (Ta = 25°C) VCEO IC P C T j Part Number Package Applications (V) (mA) (mW) (°C) Marking Remarks MT4S100U VHF/UHF-band low-noise amps 3 15 45 150 P6 f T = 22 GHz MT4S101U VHF/UHF-band low-noise amps 3 10 30 150 P7 f T = 21 GHz MT4S102U UHF/SHF-band low-noise amps 3 20 60 150 P8 f T = 24 GHz MT4S104U UHF/SHF-band low-noise amps 3 10 30 150 P1 f T = 23 GHz MT4S200U UHF/SHF-band low-noise amps 4 35 140 (Note 1) 150 P2 f T = 30 GHz MT4S300U * UHF/SHF-band low-noise amps 4 50 100 150 P3 f T = 26.5 GHz, high ESD immunity MT4S301U * USQ 2.1 2.0 1.25 UHF/SHF-band low-noise amps 4 35 100 150 P4 f T = 27.5 GHz, high ESD immunity MT4S100T VHF/UHF-band low-noise amps 3 15 45 150 P6 f T = 23 GHz MT4S101T VHF/UHF-band low-noise amps 3 10 30 150 P7 f T = 23 GHz MT4S102T UHF/SHF-band low-noise amps 3 20 60 150 P8 f T = 25 GHz MT4S104T UHF/SHF-band low-noise amps 3 10 30 150 P1 f T = 25 GHz MT4S200T UHF/SHF-band low-noise amps 4 35 100 150 P2 f T = 30 GHz MT4S300T * UHF/SHF-band low-noise amps 4 50 100 150 P3 fT = 26.5 GHz, high ESD immunity MT4S301T * TESQ 1.2 1.2 0.9 UHF/SHF-band low-noise amps 4 35 100 150 P4 fT = 27.5 GHz, high ESD immunity MT3S106FS fSM 1.0 0.6 0.8 VHF/UHF-band low-voltage operation, low-noise amps 6 80 100 (Note 1) 150 41 f T = 8.5 GHz MT3S111 * VHF/UHF-band low-noise, low-distortion amps 6 100 700 (Note 2) 150 R5 f T = 11.5 GHz MT3S113 * S-MINI 2.5 2.9 1.5 VHF/UHF-band low-noise, low-distortion amps 5.3 100 800 (Note 2) 150 R7 f T = 12.5 GHz MT3S111TU * 6 100 800 (Note 2) 150 R5 f T = 10 GHz MT3S113TU * UFM 2.1 2.0 1.7 VHF/UHF-band low-noise, low-distortion amps 5.3 100 900 (Note 2) 150 R7 f T = 11.2 GHz MT3S111P * 6 100 1000 (Note 2) 150 R5 f T = 8 GHz MT3S113P * Pw-Mini 4.2 4.6 2.5 VHF/UHF-band low-noise, low-distortion amps 5.3 100 1600 (Note 2) 150 R7 f T = 7.7 GHz Note 1: When mounted on a glass-epoxy PCB board *: New product Note 2: Mounted on a ceramic board
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Radio-Frequency Small-Signal FETs Radio-Frequency MOSFETs Electrical Characteristics (Ta = 25°C) Part Number Package Applications VDS (V) ID (mA) PD (mW) IDSS (mA) |Yfs| (mS) Typ. Marking Equivalent Product (Leaded Type) 3SK291 UHF-band radio-frequency amps 12.5 30 150 0 to 0.1 26 UF ⎯ 3SK292 SMQ 2.9 2.9 1.5 VHF/UHF-band radio-frequency amps 12.5 30 150 0 to 0.1 23.5 UV ⎯ 3SK293 UHF-band radio-frequency amps 12.5 30 100 0 to 0.1 26 UF ⎯ 3SK294 USQ 2.1 2.0 1.25 VHF/UHF-band radio-frequency amps 12.5 30 100 0 to 0.1 23.5 UV ⎯

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. Radio-Frequency Junction FETs Electrical Characteristics (Ta = 25°C) Part Number Package Applications VGDO VGDS ◊ (V) IG (mA) PD (mW) IDSS (mA) |Yfs| (mS) Typ. Marking Equivalent Product (Leaded Type) 2SK210 FM-band radio-frequency amps −18 10 100 3.0 to 24 7 Y □ ⎯ 2SK711 S-MINI 2.5 2.9 1.5 AM-band radio-frequency amps −20 ◊ 10 150 6 to 32 25 RB □ 2SK709 2SK1875 USM 2.1 2.0 1.25 AM-band radio-frequency amps −20 ◊ 10 100 6 to 32 25 RB □ 2SK709 □: Denotes a IDSS class.
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Radio-Frequency Power MOSFETs Radio-Frequency Power MOSFETs Absolute Maximum Ratings (Tc = 25°C) Po (W) Test Conditions Part Number Package Applications VDSS (V) PD (W) ID (A) Min VDD (V) f (MHz) Pi (W) RFM08U9X * PW-X 36 20 5 7.5 9.6 520 0.5 2SK3075 PW-X 30 20 5 7.5 9.6 520 0.5 2SK3074 PW-MINI 30 3 1 0.63 9.6 520 0.02 RFM12U7X * PW-X 20 20 4 11.5 7.2 520 1.0 RFM01U7P * PW-MINI 20 3 1 1.0 7.2 520 0.1 2SK3476 PW-X 20 20 3 7.0 7.2 520 0.5 2SK3475 PW-MINI UHF/VHF Professional radios 20 3 1 0.63 7.2 520 0.02 RFM04U6P * PW-MINI 16 7 2 3.5 6.0 470 0.2 2SK4037 PW-X GMRS 12 20 3 3.55 6.0 470 0.3 2SK2854 PW-MINI UHF/VHF 2SK3079A PW-X 10 20 3 2.24 4.5 470 0.1 2SK3756 PW-MINI 7.5 3 1 1.26 4.5 470 0.1 2SK3078A PW-MINI FRS/GMRS 10 3 0.5 0.63 4.5 470 0.1 RFM03U3CT * RF-CST3 GMRS 16 7 2.5 2.3 3.6 520 0.1

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IGBTs (Discrete IGBTs) Absolute Maximum Ratings (Ta = 25°C) Ic Pc Package VCE(sat) Typ. @Ta = 25°C tf Typ. @Ta = 25°C Part Number Applications Features VCES (V) DC (A) Pulse (A) Ta = 25°C (W) Tc = 25°C (W) Type Circuit Configuration (Note) (V) @IC (A) @VGE (V) (µs) Test Conditions Remarks GT10J321 10 20 ⎯ 29 TO-220NIS Isolation, Through-hole (2) 2.0 10 15 0.03 GT15J321 15 30 ⎯ 30 TO-220NIS Isolation, Through-hole (2) 1.9 15 15 0.03 GT15J331 15 30 ⎯ 70 TO-220SM SMD (2) 1.75 15 15 0.10 Low VCE (sat) GT20J321 20 40 ⎯ 45 TO-220NIS Isolation, Through-hole (2) 2.0 20 15 0.04 GT30J121 30 60 ⎯ 170 TO-3P(N) Through-hole (1) 2.0 30 15 0.05 GT30J126 30 60 ⎯ 90 TO-3P(N)IS Isolation, Through-hole (1) 1.95 30 15 0.05 GT30J324 30 60 ⎯ 170 TO-3P(N) Through-hole (2) 2.0 30 15 0.05 GT50J121 50 100 ⎯ 240 TO-3P(LH) Through-hole (1) 2.0 50 15 0.05 GT50J325 Power supplies (and UPS/PFC/Motor) High-speed switching 600 50 100 ⎯ 240 TO-3P(LH) Through-hole (2) 2.0 50 15 0.05 GT10Q101 10 20 ⎯ 140 TO-3P(N) Through-hole (1) 2.1 10 15 0.16 GT10Q301 10 20 ⎯ 140 TO-3P(N) Through-hole (2) 2.1 10 15 0.16 GT15Q102 15 30 ⎯ 170 TO-3P(N) Through-hole (1) 2.1 15 15 0.16 GT15Q301 15 30 ⎯ 170 TO-3P(N) Through-hole (2) 2.1 15 15 0.16 GT25Q102 25 50 ⎯ 200 TO-3P(LH) Through-hole (1) 2.1 25 15 0.16 GT25Q301 High ruggedness 1200 25 50 ⎯ 200 TO-3P(LH) Through-hole (2) 2.1 25 15 0.16 GT5J301 5 10 ⎯ 28 TO-220NIS Isolation, Through-hole (2) 2.1 5 15 0.15 GT5J311 5 10 ⎯ 45 TO-220SM SMD (2) 2.1 5 15 0.15 GT10J301 10 20 ⎯ 90 TO-3P(N) Through-hole (2) 2.1 10 15 0.15 GT10J303 10 20 ⎯ 30 TO-220NIS Isolation, Through-hole (2) 2.1 10 15 0.15 GT10J312 10 20 ⎯ 60 TO-220SM SMD (2) 2.1 10 15 0.15 GT15J301 15 30 ⎯ 35 TO-220NIS Isolation, Through-hole (2) 2.1 15 15 0.15 GT15J311 15 30 ⎯ 70 TO-220SM SMD (2) 2.1 15 15 0.15 GT20J101 20 40 ⎯ 130 TO-3P(N) Through-hole (1) 2.1 20 15 0.15 GT20J301 20 40 ⎯ 130 TO-3P(N) Through-hole (2) 2.1 20 15 0.15 GT30J101 30 60 ⎯ 155 TO-3P(N) Through-hole (1) 2.1 30 15 0.15 GT30J301 30 60 ⎯ 155 TO-3P(N) Through-hole (2) 2.1 30 15 0.15 GT50J102 50 100 ⎯ 200 TO-3P(LH) Through-hole (1) 2.1 50 15 0.15 GT50J301 Motor drives (and UPS/PFC) High ruggedness 50 100 ⎯ 200 TO-3P(LH) Through-hole (2) 2.1 50 15 0.15 Inductive load GT30J122 Power factor correction Low VCE(sat) frequency switching 30 100 ⎯ 75 TO-3P(N)IS Isolation, Through-hole (1) 2.1 50 15 0.25 Partial switching converter GT30J322 30 100 ⎯ 75 TO-3P(N)IS Isolation, Through-hole (2) 2.1 50 15 0.25 GT35J321 37 100 ⎯ 75 TO-3P(N)IS Isolation, Through-hole (2) 1.9 50 15 0.19 GT40J321 40 100 ⎯ 120 TO-3P(N) Through-hole (2) 2.0 40 15 0.11 Fast switching GT40J322 40 100 ⎯ 120 TO-3P(N) Through-hole (2) 1.7 40 15 0.20 GT50J322 50 100 ⎯ 130 TO-3P(LH) Through-hole (2) 2.1 50 15 0.25 GT50J322H 50 100 ⎯ 130 TO-3P(LH) Through-hole (2) 2.2 50 15 0.11 Fast switching GT50J327 50 100 ⎯ 140 TO-3P(N) Through-hole (2) 1.9 50 15 0.19 GT50J328 50 120 ⎯ 140 TO-3P(N) Through-hole (2) 2.0 50 15 0.1 Fast switching GT60J321 60 120 ⎯ 200 TO-3P(LH) Through-hole (2) 1.55 60 15 0.30 Low VCE (sat) GT60J323 60 120 ⎯ 170 TO-3P(LH) Through-hole (2) 1.9 60 15 0.16 GT60J323H IH rice cookers, IH cooktops, Microwave ovens, Induction heating equipment AC 200 V Current resonance 600 60 120 ⎯ 170 TO-3P(LH) Through-hole (2) 2.1 60 15 0.12 Resistive load Fast switching

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. (1) Typical Collector Emitter Gate Note) (2) Built-in FRD Collector Emitter Gate (3) Built-in Zener diode Collector Emitter Gate 69 2010/9 SCE0004K

IGBT (Discrete IGBT) (Continued) Absolute Maximum Ratings (Ta = 25°C) Ic Pc Package VCE(sat) Typ. @Ta = 25°C tf Typ. @Ta = 25°C Part Number Applications Features VCES (V) DC (A) Pulse (A) Ta = 25°C (W) Tc = 25°C (W) Type Circuit Configuration (Note) (V) @IC (A) @VGE (V) (µs) Test Conditions Remarks GT15M321 15 30 ⎯ 55 TO-3P(N)IS Isolation, Through-hole (2) 1.8 15 15 0.20 For small power GT50M322 50 120 ⎯ 156 TO-3P(N) Through-hole (2) 2.1 60 15 0.25 GT60M323 60 120 ⎯ 200 TO-3P(LH) Through-hole (2) 2.3 60 15 0.09 Fast switching GT60M303 60 120 ⎯ 170 TO-3P(LH) Through-hole (2) 2.1 60 15 0.25 GT60M324 * 900 60 120 ⎯ 254 TO-3P(N) Through-hole (2) 1.7 60 15 0.11 Tj = 175°C GT50N321 50 120 ⎯ 156 TO-3P(N) Through-hole (2) 2.5 60 15 0.25 GT50N322A 50 120 ⎯ 156 TO-3P(N) Through-hole (2) 2.2 60 15 0.1 Fast switching GT50N324 50 120 ⎯ 150 TO-3P(N) Through-hole (2) 1.9 60 15 0.11 6th generation GT60N321 60 120 ⎯ 170 TO-3P(LH) Through-hole (2) 2.3 60 15 0.25 GT60N322 IH rice cookers, IH cooktops, Microwave ovens, Induction heating equipment AC100 V 1000 57 120 ⎯ 200 TO-3P(LH) Through-hole (2) 2.4 60 15 0.11 Fast switching GT40Q321 1200 42 80 ⎯ 170 TO-3P(N) Through-hole (2) 2.8 40 15 0.41 GT40T321 * 40 80 ⎯ 230 TO-3P(N) Through-hole (2) 2.15 40 15 0.24 Tj = 175°C GT40T302 * IH rice cookers, IH cooktops, Microwave ovens, Induction heating equipment AC200 V Voltage resonance 1500 40 80 ⎯ 200 TO-3P(LH) Through-hole (2) 3.7 40 15 0.23 High VCES GT5G133 * Digital still cameras, cell phone ⎯ 130 0.83 ⎯ TSON-8 SMD (3) 3.0 130 2.5 1.5 ICP = 130 A @VGE = 2.5V gate drive GT8G132 ⎯ 150 1.1 ⎯ SOP-8 SMD (3) 2.3 150 4.0 1.6 ICP = 150 A @VGE = 4.0V gate drive GT8G133 ⎯ 150 1.1 ⎯ TSSOP-8 SMD (3) 2.9 150 4.0 1.7 ICP = 150 A @VGE = 4.0V gate drive GT8G134 ⎯ 150 1.1 ⎯ TSSOP-8 SMD (3) 3.4 150 2.5 1.2 ICP = 150 A @VGE = 2.5V gate drive GT8G136 ⎯ 150 1.1 ⎯ TSSOP-8 SMD (3) 3.5 150 3.0 1.6 ICP = 150 A @VGE = 3.0V gate drive GT10G131 Digital still cameras, single lens reflex cameras Strobe flash (dimming control) 400 ⎯ 200 1.9 ⎯ SOP-8 SMD (3) 2.3 200 4.0 1.8 ICP = 200 A @VGE = 4.0V gate drive GT30F122 ⎯ 120 ⎯ 25 TO-220SIS Isolation, Through-hole (1) 2.4 120 15 0.21 5th generation GT30F123 ⎯ 200 ⎯ 25 TO-220SIS Isolation, Through-hole (1) 2.1 120 15 0.15 6th generation GT30F124 * 300 ⎯ 200 ⎯ 25 TO-220SIS Isolation, Through-hole (1) 2.3 120 15 0.15 6th generation GT30F125 * 330 ⎯ 200 ⎯ 25 TO-220SIS Isolation, Through-hole (1) 1.9 120 15 0.15 6th generation GT45F122 ⎯ 200 ⎯ 25 TO-220SIS Isolation, Through-hole (1) 2.2 120 15 0.2 5th generation GT45F123 ⎯ 200 ⎯ 26 TO-220SIS Isolation, Through-hole (1) 1.95 120 15 0.2 5th generation GT45F124 ⎯ 200 ⎯ 29 TO-220SIS Isolation, Through-hole (1) 1.7 120 15 0.22 5th generation GT45F125 ⎯ 200 ⎯ 29 TO-220SIS Isolation, Through-hole (1) 1.45 120 15 0.4 5th generation GT45F127 PDP-TV PDP sustain, energy recovery and separation circuits 300 ⎯ 200 ⎯ 26 TO-220SIS Isolation, Through-hole (1) 1.6 120 15 0.27 Resistive load 6th generation

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product (1) Typical Collector Emitte Gate Note) (2) Built-in FRD Collector Emitte Gate (3) Built-in Zener diode Collector r Emitte Gate 70 2010/9 SCE0004K

Absolute Maximum Ratings (Ta = 25°C) Ic Pc Package VCE(sat) Typ. @Ta = 25°C tf Typ. @Ta = 25°C Part Number Applications Features VCES (V) DC (A) Pulse (A) Ta = 25°C (W) Tc = 25°C (W) Type Circuit Configuration (Note) (V) @IC (A) @VGE (V) (µs) Test Conditions Remarks GT45F128 * 330 ⎯ 200 ⎯ 26 TO-220SIS Isolation, Through-hole (1) 1.45 120 15 0.27 6th generation GT45F131 300 ⎯ 200 ⎯ 160 TO-220SM SMD (1) 1.7 120 15 0.22 5th generation GT30G122 400 ⎯ 120 ⎯ 25 TO-220SIS Isolation, Through-hole (1) 2.6 120 15 0.25 5th generation GT30G123 ⎯ 200 ⎯ 25 TO-220SIS Isolation, Through-hole (1) 2.2 120 15 0.20 6th generation GT30G124 * ⎯ 200 ⎯ 25 TO-220SIS Isolation, Through-hole (1) 2.5 120 15 0.23 6th generation GT30G125 * 430 ⎯ 200 ⎯ 25 TO-220SIS Isolation, Through-hole (1) 2.1 120 15 0.16 6th generation GT45G122 ⎯ 200 ⎯ 25 TO-220SIS Isolation, Through-hole (1) 2.4 120 15 0.28 5th generation GT45G123 ⎯ 200 ⎯ 26 TO-220SIS Isolation, Through-hole (1) 2.1 120 15 0.23 5th generation GT45G124 ⎯ 200 ⎯ 29 TO-220SIS Isolation, Through-hole (1) 1.9 120 15 0.27 5th generation GT45G125 400 ⎯ 200 ⎯ 29 TO-220SIS Isolation, Through-hole (1) 1.6 120 15 0.5 5th generation GT45G127 ⎯ 200 ⎯ 26 TO-220SIS Isolation, Through-hole (1) 1.7 120 15 0.37 6th generation GT45G128 * 430 ⎯ 200 ⎯ 26 TO-220SIS Isolation, Through-hole (1) 1.55 120 15 0.41 6th generation GT45G131 400 ⎯ 200 ⎯ 160 TO-220SM SMD (1) 1.9 120 15 0.27 5th generation GT30J124 PDP-TV PDP sustain, energy recovery and separation circuits 600 ⎯ 200 ⎯ 26 TO-220SIS Isolation, Through-hole (1) 2.4 120 15 0.25 Resistive load 5th generation

Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product (1) Typical Collector Emitter Gate Note) (2) Built-in FRD Collector Emitter Gate (3) Built-in Zener diode Collector Emitter Gate 71 2010/9 SCE0004K

Phototransistors (for Optical Sensors) Electrical/Optical Characteristics (Ta = 25°C) Light Current Dark Current Part Number Part Number with Rank Package Min (µA) Max (µA) E (mW/cm ) Max (µA) VCE (V) Peak Sensitive Wavelength (nm) Half-Value Angle ( ° ) Impermeable to Visible Light ⎯ 100 ⎯ TPS601A(A,F) 100 300 TPS601A(B,F) 200 600 TPS601A(F) TPS601A(C,F) TO-18CAN with lens 400 1200 0.1 0.2 30 800 ±10 ⎯ TPS610(F) ⎯ φ5 100 ⎯ 0.1 0.1 24 800 ±8 ⎯ TPS611(F) ⎯ φ5 30 ⎯ 0.1 0.1 24 900 ±8 ● ⎯ 20 150 TPS615(B,F) 34 85 TPS615(C,F) 60 150 TPS615(F) TPS615(BC,F) 34 150 0.1 0.1 24 800 ±30 ⎯ ⎯ 10 75 TPS616(B,F) 17 42.5 TPS616(C,F) 30 75 TPS616(F) TPS616(BC,F) 17 75 0.1 0.1 24 900 ±30 ● ⎯ 27 ⎯ TPS622(A,F) 27 80 TPS622(F) TPS622(B,F) Small side-view package 55 165 0.1 0.1 24 870 ±15 ● Optoelectronic switches Note: E = radiant incidence; VCE = collector-emitter voltage

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Product Information

SSM6K32TU specifications and overview.

Summary

Bipolar Small-Signal Transistors

Description

Bipolar Small-Signal Transistors

Source title SSM6K32TU Datasheet(PDF) - Toshiba Semiconductor

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