SSM3J328R

SSM3J328R_14 TOSHIBA | Alldatasheet

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TOSHIBA Field-Effect Transistor Silicon P-Chan nel MOS Type (U-MOSⅥ) SSM3J328R ○ Power Management Switch Applications

• 1.5-V drive
• Low ON-resistance: R DS(ON) = 88.4mΩ (max) (@V GS = -1.5 V) R DS(ON) = 56.0mΩ (max) (@V GS = -1.8 V) R DS(ON) = 39.7mΩ (max) (@V GS = -2.5 V) R DS(ON) = 29.8mΩ (max) (@V GS = -4.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ± 8 V DC I D (Note 1) -6.0 Drain current Pulse I DP (Note 1,2) -24.0 A PD (Note 3) 1 Power dissipation t = 10s 2 W Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause th is product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150°C during use. Note 2: PW ≤ 10μs,Duty ≤ 1％ Note 3: Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm Marking Equivalent Circuit (Top view) Unit: mm 0.17 +0.08 -0.07 2.9±0.2 0.95 0.95 0.42+0.08 -0.05 1.8±0.1 2.4±0.1 1 2 A

0.05 M A

+0.08 -0.050.8 JEDEC ― JEITA ― TOSHIBA 2-3Z1A Weight: 11 mg (typ.) KFH 1 2 1 2 1: Gate 2: Source 3: Drain SOT-23F Start of commercial production 2010-08

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit V (BR) DSS ID = -1 mA, VGS = 0 V -20 ⎯ ⎯ V Drain-source breakdown voltage V (BR) DSX ID = -1 mA, VGS = 5 V (Note 5) -15 ⎯ ⎯ V Drain cut-off current IDSS V DS = -20 V, VGS = 0 V ⎯ ⎯ -1 μA Gate leakage current IGSS V GS = ±8 V, VDS = 0 V ⎯ ⎯ ±1 μA Gate threshold voltage Vth V DS = -3 V, ID = -1 mA -0.3 ⎯ -1.0 V Forward transfer admittance ⏐Yfs⏐ V DS = -3 V, ID = -1.0 A (Note 4) 4.5 9.1 ⎯ S Drain–source ON-resistance RDS (ON) mΩ Input capacitance Ciss ⎯ 840 ⎯ Output capacitance Coss ⎯ 118 ⎯ Reverse transfer capacitance Crss VDS = -10 V, VGS = 0 V f = 1 MHz ⎯ 99 ⎯ pF Total gate charge Qg ⎯ 12.8 ⎯ Gate-source charge Qgs1 ⎯ 1.4 ⎯ Gate-drain charge Qgd VDD = -10 V, IDS = -4.0 A, VGS = -4.5 V ⎯ 3.0 ⎯ nC Turn-on time t on ⎯ 32 ⎯ Switching time Turn-off time t off VDD = -10 V, ID = -2.0 A VGS = 0 to -2.5 V, RG = 4.7 Ω ⎯ 107 ⎯ ns Drain-Source forward voltage VDSF I D = 6.0 A, VGS = 0 V (Note 4) ⎯ 0.87 1.2 V Note4: Pulse test Note5: If a forward bias is applied between gate and sour ce, this device enters V(BR )DSX mode. Note that the drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit (a) Test Circuit Notice on Usage Let Vth be the voltage applied between gate and s ource that causes the drain current (I D) to be low (-1 mA for the SSM3J328R). Then, for norma l switching operation, V GS(on) must be higher than V th, and V GS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration. VDD = -10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C IN 0 −2.5V 10 μs VDD OUT RG RL ton 10% 90% −2.5 V 0 V 90% 10% toff tr tf VDS (ON) VDD (c) VOUT (b) VIN

RDS (ON) – VGS − 25 °C 25 °C 140 Ta = 100 °C 120 ID =-0.5A Common Source Pulse test 100 ID – VGS -100 -0.0001 -10 -0.01 -0.1 -0.001 -2.0 −25 °C Common Source VDS = -3 V Pulse test Ta = 100 °C 25 °C -0.5 -1.5 -1.0 RDS (ON) – Ta 120 −50 ID = -0.5 A / VGS = -1.5 V 0 50 150 100 -2.5 A / -2.5 V -3.0 A / -4.5 V -1.5 A / -1.8 V 140 Drain–source voltage V DS (V) ID – VDS Drain current I D (A) -10 Common Source Ta = 25 °C Pulse test -1.8 V -2.5 V -0.4 VGS =-4.5 V RDS (ON) – VGS RDS (ON) – ID -1.5 V 0 -2 -4 -6 − 25 °C 25 °C 140 Ta = 100 °C 120 ID =-2.5A Common Source Pulse test 100 -8.00 -2.0 -4.0 -6.0 140 -1.5 V -2.5 V -1.8 V 120 100 -4.5 V -10.0 100 Gate–source voltage V GS ( V ) Drain current I D (A) Gate–source voltage V GS ( V ) Drain–source ON-resistance RDS (ON) ( m Ω) Gate–source voltage V GS ( V ) Drain–source ON-resistance RDS (ON) ( m Ω) Drain current I D (A) Drain–source ON-resistance RDS (ON) ( m Ω) Ambient temperature Ta (°C) Drain–source ON-resistance RDS (ON) ( m Ω) Common Source Ta = 25°C Pulse test Common Source Pulse test

Capacitance C (pF) Switching time t (ns) |Yfs| – ID 0.1 -100 1.0 100 -0.1 -1 -10 0.3 3.0 C – VDS 0 0 10 20 Common Source ID = -4.0 A Ta = 25 °C Vth – Ta -0.8 −50 0 150 -0.2 -0.4 -0.6 -1.0 50 100 VDD = -10 V VDD = -16 V t – ID IDR – VDS 100 0.01 0.1 0.001 Common Source VGS = 0 V Ta = 25 °C Pulse test G D S IDR 100 °C 25 °C −25 °C Common Source VDS = -3 V Ta = 25 °C Pluse test -0.01 Common Source VDS = -3 V ID = -1 mA -0.1 -1 -10 -100 1000 10000 3000 5000 300 500 100 Ciss Crss Coss Common Source Ta = 25 °C f = 1 MHz VGS = 0 V -0.001 1000 -0.1 10000 -1 -10 100 tf Common Source VDD = -10 V VGS = 0 to -2.5 V Ta = 25 °C RG = 4.7Ω -0.01 toff tr ton Ambient temperature Ta (°C) Gate threshold voltage V th (V) Drain current I D (A) Forward transfer admittance ⎪Yfs⎪ (S) Drain–source voltage V DS (V) Total Gate Charge Qg (nC) Gate–source voltage V GS ( V ) Dynamic Input Characteristic Drain current I D (A) Drain–source voltage V DS (V) Drain reverse current I DR (A)

Pulse width t w (s) Rth – tw Transient thermal impedance R th (°C/W ) 0.001 1000 0.01 0.1 1 100 100 1000 Single pulse a. Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) b. Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.72 mm 2×3) b a Ambient temperature Ta (°C) PD – Ta Power dissipation P D ( m W ) 1600 400 120100 140 800 160 80 60 40 20 0 -20 -40 a 1200 a: Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm 2) b: Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.72 mm 2 ×3) b

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