SSM3J327R TOSHIBA | Alldatasheet

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TOSHIBA Field-Effect Transistor Silicon P-Chan nel MOS Type (U-MOSⅥ) SSM3J327R ○ Power Management Switch Applications

  • 1.5-V drive
  • Low ON-resistance: R DS(ON) = 240 mΩ (max) (@VGS = -1.5 V) R DS(ON) = 168 mΩ (max) (@VGS = -1.8 V) R DS(ON) = 123 mΩ (max) (@VGS = -2.5 V) R DS(ON) = 93 m Ω (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ± 8 V DC I D (Note 1) -3.9 Drain current Pulse I DP (Note 1) -7.8 A PD (Note 2) 1 Drain power dissipation t = 10s 2 W Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause th is product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150°C during use. Note 2: Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm Marking (Top View) Equivalent Circuit Unit: mm 0.17 +0.08 -0.07 2.9±0.2 0.95 0.95 0.42+0.08 -0.05 1.8±0.1 2.4±0.1 1 2 A

0.05 M A

+0.08 -0.050.8 JEDEC ― JEITA ― TOSHIBA 2-3Z1A Weight: 11 mg (typ.) KFG 1 2 1 2 1: Gate 2: Source 3: Drain SOT-23F

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit V (BR) DSS ID = -1 mA, VGS = 0 V -20 ⎯ ⎯ V Drain-source breakdown voltage V (BR) DSX ID = -1 mA, VGS = 5 V (Note 4) -15 ⎯ ⎯ V Drain cut-off current IDSS V DS = -20 V, VGS = 0 V ⎯ ⎯ -1 μA Gate leakage current IGSS V GS = ±8 V, VDS = 0 V ⎯ ⎯ ±1 μA Gate threshold voltage Vth V DS = -3 V, ID = -1 mA -0.3 ⎯ -1.0 V Forward transfer admittance ⏐Yfs⏐ V DS = -3 V, ID = -1.0 A (Note 3) 2.8 5.6 ⎯ S ID = -1.5 A, VGS = -4.5 V (Note 3) ⎯ 78.5 93 ID = -1.0 A, VGS = -2.5 V (Note 3) ⎯ 97.5 123 ID = -0.5 A, VGS = -1.8 V (Note 3) ⎯ 120 168 Drain–source ON-resistance RDS (ON) ID = -0.25 A, VGS = -1.5 V (Note 3) ⎯ 141 240 mΩ Input capacitance Ciss ⎯ 290 ⎯ Output capacitance Coss ⎯ 44 ⎯ Reverse transfer capacitance Crss VDS = -10 V, VGS = 0 V f = 1 MHz ⎯ 32 ⎯ pF Turn-on time t on ⎯ 12.0 ⎯ Switching time Turn-off time t off VDD = -10 V, ID = -0.5 A VGS = 0 to -2.5 V, RG = 4.7 Ω ⎯ 46.2 ⎯ ns Total gate charge Qg ⎯ 4.6 ⎯ Gate-source charge Qgs ⎯ 3.4 ⎯ Gate-drain charge Qgd VDD = -10 V, IDS = -3.9 A, VGS = -4.5 V ⎯ 1.2 ⎯ nC Drain-source forward voltage VDSF I D = 3.9 A, VGS = 0 V (Note 3) ⎯ 0.97 1.2 V Note3: Pulse test Note4: VDSX mode (the application of a plus voltage between gate and source) may cause decrease in maximun rating of drain-source voltage Switching Time Test Circuit (a) Test Circuit Notice on Usage Let Vth be the voltage applied between gate and s ource that causes the drain current (I D) to be low (-1 mA for the SSM3J327R). Then, for norma l switching operation, V GS(on) must be higher than V th, and V GS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance R th (ch-a) and drain power dissipation P D vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration VDD = -10 V RG = 4.7 Ω Duty.≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C IN 0 −2.5V 10 μs VDD OUT RG RL ton 10% 90% −2.5 V 0 V 90% 10% toff tr tf VDS (ON) VDD (c) VOUT (b) VIN

Ambient temperature Ta (°C) Vth – Ta Gate threshold voltage V th (V) -1.0 −50 0 150 -0.5 50 100 Common Source VDS = -3 V ID = -1 mA Drain–source voltage V DS (V) ID – VDS Drain current I D (A) -0.8 Common Source Ta = 25 °C -1.8 V VGS = -1.5 V -2.5V -4.5V Drain–source ON-resistance RDS (ON) ( m Ω) 0 -2 -4 -6 Gate–source voltage V GS ( V ) RDS (ON) – VGS 200 -25 °C 25 °C 300 100 ID =-1.5A Common Source Ta = 100 °C -8.0 RDS (ON) – ID Drain current I D (A) Drain–source ON-resistance RDS (ON) ( m Ω) 0 -2.0 -4.0 -6.0 300 100 200 Common Source Ta = 25°C VGS = -4.5 V -1.5 V -2.5 V -1.8V Ambient temperature Ta (°C) RDS (ON) – Ta Drain–source ON-resistance RDS (ON) ( m Ω) −50 0 50 150 100 300 100 200 Common Source ID = -1.5 A / VGS = -4.5 V -0.25 A / -1.5 V -1.0 A / -2.5 V -0.5 A / -1.8V Gate–source voltage V GS ( V ) ID – VGS Drain current I D (A) -10 -0.1 -0.001 -0.01 -0.0001 -2.0 -1.0 Common Source VDS = -3 V -25 °C Ta = 100 °C 25 °C

Drain current I D (A) Forward transfer admittance ⎪Yfs⎪ (S) |Yfs| – ID 0.1 -10 -0.1 -1 0.3 -0.01 Common Source VDS = -3 V Ta = 25°C Drain current I D (A) Switching time t (ns) t – ID -0.001 1000 -0.1 10000 -1 -10 100 tf Common Source VDD = -10 V VGS = 0 to -2.5 V Ta = 25 °C RG = 4.7Ω 10 -0.01 toff tr ton Total gate charge Qg (nC) Dynamic Input Characteristic Gate–source voltage V GS ( V ) 0 4 8 2 6 VDD = - 16 V VDD = - 10 V Common Source ID = -3.9 A Ta = 25°C Drain reverse current I DR (A) Drain–source voltage V DS (V) IDR – VDS 0.1 0.001 0.01 0.5 1.0 1.5 Common Source VGS = 0 V G D S IDR -25 °C Ta =100 °C 25 °C Drain-source voltage V DS (V) C – VDS Capacitance C (pF) -0.1 -1 -10 -100 100 1000 300 Common Source Ta = 25 °C f = 1 MHz VGS = 0 V Ciss Coss Crss

Pulse width t w (s) rth – tw Transient thermal impedance r th (°C/W ) 0.001 10000.01 0.1 1 100 100 1000 Single pulse a. Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) b. Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.72 mm2×3) b a Ambient temperature Ta (°C) PD – Ta Drain power dissipation PD (mW) 1600 400 120 100 140 800 160 80 60 40 20 0 -20 -40 a 1200 a: Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm 2) b: Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.72 mm 2 ×3) b

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