SSH5N90 SAMSUNG | Alldatasheet

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+ Lower Rosion) : ; + Fast switching times + Rugged polysilicon gate cell structure + Lower input capacitance 1A, + Extended safe operating area + Improved high temperature reliability 1.Gate 2. Drain 3. Source PRODUCT SUMMARY ABSOLUTE MAXIMUM RATINGS | Drain-Source vonage tt) | Voss | ge Dran-Gat Votage Res=toMayey | voor [00 | [-Coninueus Oran CureniTo=25°C | | SO SSSC~*d CC | Continuous Drain GurentTe=to0°6 | oe | Drain Curent -Puised@y | tow | ae | | Single Pulsed Avalanche Energy (4) [ews | aso Tw [Aanctocuret | ws | SSC~idC ‘Total Power Dissipation at Tc=25 °C ‘Watts Derate Above 25 °C wi" [srimreyenetee [| atm | Junction Temperature Range Maximum Lead Temp. for Soldering n °C Purposes, 1/8” from case for 5 seconds . Notes : (1) Ts=25°C to 150°C (2) Pulse test : Pulse width<300us, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by junction temperature (4) L=51mH, Vdd=50V, Ro=250 , Starting Ts=25°C ELECTRONICS ME 7964142 0028376 772

=_—_— eee ee ELECTRICAL CHARACTERISTICS (rc-25°c unless otherwise specified) [symbol] Characterieuo | Min| Typ | Max [Units] Test Conditions "ies [oar seoaee eel (| Tea | voswy | GoteTreshoidVotage | 20] = | 45 | V | vosc¥es, inn250Wa | toss _| Gate-SouceLeskage rowed |= [= | 100 | na | vass2ov | tsss_| Gate-SouceLeskage Revere |= [= | -100| nA | vas--20v [= [rommarnmcmme LL alr leat tng | = | = | 1000] 2A | Vos=0.8 Max Rating, Vose0V,To=150"C | Static Drain-Source On-Resistancel2) bef eo woes 9s _| Forward Transconductance @) ee | | Os | Input Capactance |= | 700] = | or | | com | Outputcapactance |= | 140] = | BF | vasn0v, Vosn25y et Mbz | ne | Reverse Transfer Capactance | - [60 | - | oF | | won | Tun-OndelyTine |= | a0] = | ne | vons0.sBvbes, 5.04, Z0-0:10 | [Ricetime |= | 80 = | ns | (aosret switching tines ae essentially | tem | Tun-onDekyTime |= | 250] = | ne | independent of operating temperate) [u [rantime | Fao = [os | [* [tcrencomony | | [| * | emeeraneenes (Gate-Source Pius Gate-Drain) (Gate charge is essentially independent of | = | Gate-soucecrame |= [13 [= | 16 | operating tormperatre [Qos | Gate-Drain Miler) Charge [| - | «| - THERMAL RESISTANCE FS eae foe te | acs | Gaseto-Sink [ Rin | Junction-o-Ambient [wax] 40 [Kw | FreeArOpertion | Notes : (1) Ti=25°C to 150°C (2) Pulse test : Pulse width <300us, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. junction temperature eee ELECTRONICS mm 7964142 0028377 635 a

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS [Symbot] ___Gheractoritic | Min | Typ | Max | Unto ‘Test Conditions Db (Body Diode) ‘symbol showing the Pulse Source Current integral reverse [ie | Dose raveceon@ || [is vere [ie [rewserecvey tine | = | Wo] - | we [Tar nasa eas | Notes : (1) Ti=25°C to150°C (2) Pulse test : Pulse width <300s, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. junction temperature q the Coo 7 iat CEE [ {| | tt tft pee , —_ iH | i n/n eRe ee ed? Pe BeaSaSeH FH : a Gee ASeeeee op Sra eee HEE Ptpfceeee yf LUN...

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L, . : fliers ee Sees ESS meee Ee a SSeS ester Hie ———— ay) eee ety Sr ers i Ee eet Jace 4 er SSS FRR 4 Set PURO matiiimeteererceee mama Ht t ut [3 TartosPow Zn f) i i f Hl eC Al SQUARE WANE PULSE DURATON £60H08) ‘Maximum Effective Transient Thermal Impedance Junction-to-Case Vs. Pulse Duration * i a ZF etii titi) ¢ Z : 4 7S | g. 3 tee TTT

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: i ! a nl) ian SS Jo, ORAIN CURRENT (AMPERES) sp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical Transcounductance Va Bran Curent Typical Source--Drain Diode Forward Voltage 125 as 3 " |_| ge. 3a is 33 33 — ti A 38 om 82 10 x a @ s a | OND 0 40 Cy 120 160 40 0 0 0 120 160,

1 AINCTION TEMPERATURE Tu JUNCTION TEMPERATURE (0)

Breakdown Volage Ve, Temperature Normalized OnResistance Vs. Temperature ——— eee PSamsungg - ELECTRONICS mm 7964142 0028379 40] a

SsHeNOO___ CC POWER MOSFETS 2 | a SS PETC Ceee ee fo ee Pee See Pe eee ACOA } Gee NSS ee ee a er °C etememena re i eee eee g BEEEEEEEEH Poco oP EPs PE COCceeee, 3 Coos PCO Pocono PE ee | eee EC eee TT * eer COCoeree ep Typical On-Resistance Vs. Drain Current Maximum Drain Current Vs. Case Temperature LT TT TTT Ty HES p1iINi tt PHASE PCOONE Prope No Po NE [i iy’ Power Vs. Temperature Derating Curve am” . ELECTRONICS Mm 7964142 0028380 123