SSH4N80 SAMSUNG | Alldatasheet

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+ Lower Rosion) + Improved inductive ruggedness ‘ + Fast switching times + Rugged polysilicon gate cell structure ZA + Lower input capacitance AY + Extended safe operating area Ca + Improved high temperature reliability 4 1. Gate 2. Drain 3. Source PRODUCT SUMMARY |_PartNumber | Bvoss | Rosen | to | ABSOLUTE MAXIMUM RATINGS 200 Oran Gaevotae as. 06 KH) Voor ES) Continvous Drain Current To=109°C |e | we Drain Current - Pulsed (9) [tow ft se | Sige Pulsed Avance ray) Total Power Dissipation at Tc=25 °C 135 Watts Derate Above 25°C 1.08 wc OF iting and Ste erating ancl Storage Ty, Tote -85 to +150 “c Junction Temperature Range Maximum Lead Temp. for Soldering 1 “c Purposes, 1/8" from case for § seconds . Notes : (1) Tu=25°C to 150°C (2) Pulse test : Pulse width <300us, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by junction ternperature (4) L=38mH, Vad=50V, Ro=2591, Starting T=25°C 422 MB 7964142 0026336 O1b ELECTRONICS

ELECTRICAL CHARACTERISTICS (1c-25°c unless otherwise specified) [symbol] __ Characteristic Min | Typ | Max | Units| Test Gonditions Bvoss | Drain-Source Breakdown Voltage | ~ SsHaNeo 80} - | - | Vv | Ves-0,10=250u8 SSHAN70 wo, -| -/ Vv Gate Threshold Votage 20| - | 45 | V_| Vos-Vos,ln=2501A eae Sows anad [| [mf we [woman | [iss _| casos agp Revse [| =| wom | vse av loss | Zero Gate Voltage Drain Curent | = | - | 250 | #A | Vos-Max. Rating, Vas=0V | - | - | 1000] uA | Vos-0.8 Max. Rating, Vas=0V, To=150°C | [Ro | Baie anaes Onna | [5 [0 | wanton oe | Fwd wnemacree@) [25] — [| verss0 208 [ee | wetter Pr] Coss | Output Capacitance ae | Vas=0V, Vos=25V, f= 1MHz Om _| Reverse Taster Capactance | | oF a tae) | Turn-On Delay Time | - |= [60 | ns | voo-0.5 BVoss, lo=4.0A, Z0-9.10 t [rn Time ~ | 150 | “ns | @AOSFET switching times are essentially toon | Turn-Of DelayTime ~~ | 300 | ns | independent of operating temperature) | Faltime = | 190 | hs [= [iia ||) Vas=10V, lo=4,0A, Vos=0.8 Max, Rating (Gate-Source Plus Gate-Drain) (Gate charge is essentially independent of Qgs | Gate-Source Charge [= | 18] - | ne | operating temperature [oa [ean tie Gane [tp] THERMAL RESISTANCE [roc | sasniocae wae oes ew | a [imo [atone [une [00 oe reo Notes : (1) Ts=28°C to 150°C 2) Pulse test : Pulse width< 900s, Duty Cycle <2% (8) Repetitive rating : Pulse width limited by max. junction temperature ee M@! 7564142 0026337 TSe ELECTRONICS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS [Symboi] Characteristic | Min | Typ | Max [Units] Test Conditions| ee (Body Diode) ‘symbol showing the Pulse Source Current integral reverse pe frees) «| [ve | dove Fonersvomce@ | || 18) [Taareteconven | [ce [Revere recovnrtine [| #0] - | vo [tac rata orasOonns | Notes : (1) Ts=25°C to150°C (2) Pulse test ; Pulse width <300ys, Duty Cycle<2% (8) Repetitive rating : Pulse width limited by max. junction temperature ——— SSS pee esa i Poitier] og ee A a2 eee ee eee ae PPA; pt Py tT Tf PEAR EC PFS y je eee f a a ee SA | SERRE REEERRE ye \\ 3 LT TA VE ceulacuti waite wt ten nkeroadinee vuraat wong” Typical Output Characteristics ‘Typical Transfer Characteristics VV Zamuee srt oat Ath utents btRTH ene TTR NI JEEP TAT) OE eee es i COATT La POAT LU SS i 4 casi iia A ‘aul 1 a LN AA oot LEU LTT Sy ° Vox onamero Bounce vOtrace vats ° 10? oq: nai ro SOURCE VOLTAGE WOLTS 'ypical Saturation Characteristics Maximum Sate Operating Area 424 Psimsungd me 79bu42 0028338 999 ml ELECTRONICS

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