SSH20N50 SAMSUNG | Alldatasheet

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+ Lower Rosion) + Improved inductive ruggedness + Fast switching times + Rugged polysilicon gate cell structure + Lower input capacitance + Extended safe operating area , + Improved high temperature reliability 1.Gate 2. Drain 3. Source PRODUCT SUMMARY [sevens | asov | oan [ 20 | ABSOLUTE MAXIMUM RATINGS [eras [| seco —[ ees [a] [Bese votnge (| vss [am | eo | Dri Voge ee=TOMK) | voor [sm | 050] | Continuous Drain GurentTo=es°G [ote | [coninows On Goren Terto'6 [ie [ee] [fren cure-Pused tw [0 [ etiecurent- puesta tg [ware curen ws | Total Power Dissipation at Tc=25 °C ‘Watts: Derate above 25°C wi'C dunetion Temperature Range Maximum Lead Temp. for Soldering qh c Purposes, 1/8" from case for 5 seconds if Notes : (1) Ti=25°C to 150°C (2) Pulse test : Pulse width<300,, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by junction temperature (4) L=4.3mH, Vad= 50V, Ra=250, Starting Ts=25°C a , Prd = ELECTRONICS MH 7964142 00259201 603

ELECTRICAL CHARACTERISTICS (1c=25°c unless otherwise specified) [Symbol Gharactrete | Min | typ | Max | Unt] Test Conditions BVpss | Drain-Source Breakdown Voltage SSHOONAS v | vase [Gate Threshadvotage | 20 | | 45 |v | Vosa¥os, 250% [ess [ostesouceLesapeFowee [= = [wo] mvc [iss [snteSouceuntge ese | [| wo] sa [vaca bss | 250 Gate vegan Cunet[ | | 250 oA | vse Raa va +d [= [romenromoret | ie on [es i carers — [Fs [San Soace Oreste] | | 03 | a [vastoveetta [|e tancrtce@) [70] | - | 0 | veasogenton [caf capacrce | - [weal — | or [cox | cup Capectncs | | a] | oF] veri voy [cw | Roe Ya capa | | vas] | or [ison [Rerondeoytnw | =| | a | | wna ms ata Za tr_| Rise Time | - | - | 280 | ns | (MOSFET switching times are essentially fee jeer | i Total Gate Charge AC | Ves=10V, o=20A, Vos=0.8 Max. Rating (Gate-Source Plus Gate-Drain) Pls" (Gate charge is essentially independent of | am [Gatesouvcecrage |= | a7 |= |r | operating temperature) [Lax [enon cmiercmew | -[@ | [oo] THERMAL RESISTANCE [symbol] Gharacteristos [Tan unts | Remark eee [ Rees | caseto-sink | 024 KW Notes : (1) Ti=25°C to 150°C (2) Pulse test : Pulse width< 300s, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by junction temperature a” - ELECTRONICS Mm 7964142 0029202 74T

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS [reba] Chance | wn | | was [Ur] Teter Continuous Source Current Ls [ete [| | | + ce, Pulse Source Current Integral reverse (@ody Diode) () P/N junction octfir | veo | Dodo rewasvotee@ | - | - | 25| V [tar manvew —_—i [| RewneRecomntine | = [a] = [me [mac ame aaeenas | Notes : (1) Ts=25°C to 150°C (2) Pulse test : Pulse width<300ys, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by junction temperature . oy Hf Garr] UT7 2 =CUeeaReee | Ay corr rrr = “ imi See ee ae T SGRReeeeee 2 a PQ | | | fp | tt “| a A A 25] ¢ See a Sennen ee ee fo Pe ey ; SoSSReeSRee RE nea A ftp re Sh a, bid) itt ve pypleal Output Charecterises “ipleal Troneter Characters i Po TT] § COT THIS 3 al g iN Si PoAceeeee ee] SIE J eH Hid Pee CT “pica! Saturation Charocteristes "*daximum Safe Operating Aree vur Operating Ares ee a 7 ELECTRONICS Mm 7964142 0029203 bbb a

{ -]S sae i oo Spee a ed He Coo i po PS At a y all ER EESSe. mae Ty ss alt ee er eT LL i BSS SSS Ses eee ee i —| iz cole HHP eeeaareai Pett 4 cece — Oe ay Fa On, ti oa Poet til PCT TPT Ths setearesaromomont EET COC CA Tr Maximum Ettective Transeent Thermal impedance Junction toCase Vs. Pulse Duration [oops ifaw 6 60S — =e === =a ae : 4eaacaS === 7/2=S===—— DF /Zageeees ib A fss asttente Zoe) | Ge PUAT TE Tf BSS pee | ee PCP} | LET 7 ORAM CURRENT (AMPERES) Veo, SOURCE-TO.ORAIN VOLTAGE (VOLTS) Typical Transcounductance Vs. Drain Current ‘Typical Source—Drain Diode Forward Voltage » Eo TTI TTL : TEE) Saeeenes Maaussb==2c i Maga useeaa Cer aaeeedene WoT bee Por) peer eseee aan pc Cee a LU : WY oe : aan Breakdown Volage Ve. Temperature Normalized On-Reclstance Vs. Temparsture a an 7 ELECTRONICS Mm 7964142 0029204 Sic mm

“TTT Tes TTT “TTT TT wf | [areas [TT alert ryt yy Ni peesre TTT) gt TT § IN aan i atti tty PrN Pee Roe) PAA AREER] ERR Nees ZO 4 SESS o_O) ie DaWbTOSUNCE VOLTAGE OUTS aevomt ox onae ve) ‘Typical Capacitance Va. Drain to Source Voltage ‘Typical Gate Charge Vs. Gate-to-Source Voltage TTTTTIT TTI TI TTT TITTT TTT Dediiiuedy a LT eeaeeneee i pi TY H FERS stit ti tt yy BEEEaNEE of LT ey tT i dt ti Pp NET PTT am) og LETT TINT pitti TTT) 3 PPP rrr ying 1 tlt ttt ty yy EREREEREEEEN APO Ey Tvleat Gee Se ot eximor Se Soret a, Sa Tonpecetare i wo TT TT 7 “CX bat TATE COON i wt | TIN PTT TEN [I Jt tT PAE Eee i ee Power Vs, Temperature Derating Curve ee a” “ . ELECTRONICS Mm 7964142 0029205 459 a