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10A , 30V , RDS(ON) 13.5 m Dual-N Enhancement Mode Power MOSFET 24-Oct-2011 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

FEATURES

 Low R DS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SOP-8 saves board space.  Fast switching speed.  High performance trench technology.

PACKAGE INFORMATION

SOP-8 2.5K 13 inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V TA=25°C I D 10 A Continuous Drain Current 1 TA=70°C I D 8.2 A Pulsed Drain Current 2 I DM 50 A Continuous Source Current (Diode Conduction) 1 I S 2.3 A TA=25°C P D 2.1 W Total Power Dissipation 1 TA=70°C P D 1.3 W Operating Junction & Storage Temperature Range T J, TSTG -55~150 °C THERMAL RESISTANCE RATINGS Maximum Junction to Case 1 t ≦5 sec R θJC 40 °C / W Maximum Junction to Ambient 1 t ≦5 sec R θJA 60 °C / W Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. SOP-8 A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45 ° D0 ° 8 ° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. G S G S D D D D

10A , 30V , RDS(ON) 13.5 m Dual-N Enhancement Mode Power MOSFET 24-Oct-2011 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition Static Drain-Source Breakdown Voltage V (BR)DSS 30 - - V V GS=0, ID=250μA Gate-Threshold Voltage V GS(th) 1 - - V V DS=VGS, ID=250μA Gate-Body Leakage I GSS - - ±100 nA V DS=0, VGS=20V - - 1 μA V DS=24V, VGS=0 Zero Gate Voltage Drain Current I DSS - - 25 μA V DS=24V, VGS=0, TJ=55°C On-State Drain Current 1 I D(on) 20 - - A V DS=5V, VGS=10V - - 13.5 V GS=10V, ID=10A - 16 20 V GS=4.5V, ID=8A Drain-Source On-Resistance 1 R DS(ON) - - 15 mΩ VGS=10V, ID=15A, TJ=55°C Forward Transconductance 1 g fs - 40 - S V DS=15V, ID=10A Diode Forward Voltage V SD - 0.7 - V I S=2.3A, VGS=0 Pulsed Source Current(BodyDiode) 1 I SM - 5 - A Dynamic 2 Total Gate Charge Q g - 20 - Gate-Source Charge Q gs - 7 - Gate-Drain Charge Q gd - 7 - nC ID=10A VDS=15V VGS=5V Turn-On Delay Time T d(on) - 20 - Rise Time T r - 9 - Turn-Off Delay Time T d(off) - 70 - Fall Time T f - 20 - nS VDD=25V ID=1A VGEN=10V RL=25Ω Notes: 1 Pulse test ：PW 300 μs duty cycle 2%.≦≦ 2 Guaranteed by design, not s ubject to production testing.

10A , 30V , RDS(ON) 13.5 m Dual-N Enhancement Mode Power MOSFET 24-Oct-2011 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE

10A , 30V , RDS(ON) 13.5 m Dual-N Enhancement Mode Power MOSFET 24-Oct-2011 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE