MMBD7000 SECOS | Alldatasheet
Document overview
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Technical content
Any changing of specification will not be informed individual MMBD7000 Surface Mount Switching Diode
FEATURES
/c183 Fast Switching Speed /c183 Surface Mount Package Ideally Suited for Automatic Insertion /c183 For General Purpose Switching Applications /c183 High Conductance K J C H L A B S GV 1 2 D Top View Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 ANODE 3 CATHODE/ANODE CATHODE MAXIMUM R ATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction to Ambient R /C0113JA 556 °C/W Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction to Ambient R /C0113JA 417 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C DEVICE MARKING MMBD7000 = M5C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 µAdc) V(BR) 100 — Vdc Reverse Voltage Leakage Current (VR = 50 Vdc) (VR = 100 Vdc) (VR = 50 Vdc, 125°C) IR IR2 IR3 1.0 3.0 100 µAdc Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 100 mAdc) VF 0.55 0.67 0.75 0.7 0.82 1.1 Vdc Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr — 4.0 ns Capacitance (VR = 0 V) C — 1.5 pF http://www.SeCoSGmbH.com Ele ktroni sche Bauelemente 01-Jun-2002 Rev. A Page 1 of 2 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free