DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

1.4 A, 150 V , RDS(ON) 700 m

Dual-N Enhancement Mode Power MOSFET 24-Aug-2012 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

FEATURES

 Low R DS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SOP-8 saves board space.  Fast switching speed.  High performance trench technology.

PACKAGE INFORMATION

SOP-8 2.5K 13’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage V DS 150 V Gate-Source Voltage V GS ±20 V TA = 25°C 1.4 Continuous Drain Current 1 TA = 70°C ID 1.1 A Pulsed Drain Current 2 I DM 10 A Continuous Source Current (Diode Conduction) 1 I S 2.6 A TA = 25°C 2.1 Power Dissipation 1 TA = 70°C PD 1.3 W Operating Junction & Storage Temperature Range T J, TSTG -55 ~ 150 °C THERMAL RESISTANCE RATINGS t ≦ 10 sec 62.5 °C / W Maximum Junction to Ambient 1 Steady State RθJA 110 °C / W Notes 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. SOP-8 A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45 ° D 0 ° 8 ° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. G S G S D D D D

Dual-N Enhancement Mode Power MOSFET 24-Aug-2012 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter S ymbol Min. T yp. Max. Unit Test conditions Static Gate-Threshold Voltage V GS(th) 1 - - V V DS=VGS, ID=250μA Gate-Body Leakage I GSS - - ±100 nA V DS=0, VGS=20V - - 1 V DS=120V, VGS=0 Zero Gate Voltage Drain Current I DSS - - 10 μA VDS=120V, VGS=0, TJ=55°C On-State Drain Current I D(on) 0.5 - - A V DS=5V, VGS=10V - - 0.7 V GS=10V, ID=1.2A Drain-Source On-Resistance R DS(ON) - - 1.2 Ω VGS=4.5V, ID=1.1A Forward Transconductance g fs - 11 - S V DS=15V, ID=1.2A Diode Forward Voltage V SD - 0.8 - V I S=1.3A, VGS=0 Dynamic 2 Input Capacitance C iss - 347 - Output Capacitance C oss - 37 - Reverse Transfer Capacitance C rss - 20 - pF VDS=15V, VGS=0, f=1MHz Total Gate Charge Q g - 3.7 - Gate-Source Charge Q gs - 1.3 - Gate-Drain Charge Q gd - 1.8 - nC ID= 1.2A VDS= 75V VGS= 4.5V Turn-On Delay Time T d(on) - 5 - Rise Time T r - 10 - Turn-Off Delay Time T d(off) - 16 - Fall Time T f - 8 - nS VDD=75V ID=1.2A VGEN=10V RL=62.5Ω RGEN=6Ω Notes 1 Pulse test ：PW ≦ 300 μs duty cycle ≦ 2%. 2 Guaranteed by design, not s ubject to production testing.

Dual-N Enhancement Mode Power MOSFET 24-Aug-2012 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE

Dual-N Enhancement Mode Power MOSFET 24-Aug-2012 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE