SSG4835PR-C SECOS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
-8A, -30 V , R DS(O/glyph1197) 21 m ΩΩ ΩΩ P-Ch Enhancement Mode Power MOSFET 20-Nov-2018 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4835PR-C is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The SSG4835PR-C meet the RoHS and Green Product requirement with full function reliability approved. MARKING
PACKAGE INFORMATION
SOP-8 2.5K 13’ inch ORDER INFORMATION MAXIMUM RATINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V TA=25°C -8 A Continuous Drain Current VGS @10V 1 TA=70°C ID -6 A Pulsed Drain Current 3 IDM -50 A Total Power Dissipation T A=25°C P D 1.5 W Operating Junction & Storage Temperature Range TJ, T STG -55 ~ 150 °C Thermal Resistance Ratings Thermal Resistance Junction-Ambient 1 (Max.) 85 Thermal Resistance Junction-Ambient 2 RθJA 125 Thermal Resistance Junction-Case 1 (Max.) RθJC 36 °C / W Part Number Type SSG4835PR-C Lead (Pb)-free and Halogen-free SOP-8 S S S G D D D D A 5. 79 6. 20 H 0 .33 0 .51 B 4.70 5. 11 J 0. 375 REF. C 3.80 4.0 0 K 45 °REF. D 0 ° 8° L 1.3 1. 75 2 E 0.40 1.27 M 0 0 .25 F 0. 10 0. 25 N 0.25 REF. G 1.27 TYP. 4835P /box4/box4/box4/box4/box4/box4 /box4/box4/box4/box4/box4/box4 /box4/box4/box4/box4/box4/box4 /box4/box4/box4/box4/box4/box4 /boxopen/boxopen /boxopen/boxopen = Date Code
-8A, -30 V , R DS(O/glyph1197) 21 m ΩΩ ΩΩ P-Ch Enhancement Mode Power MOSFET 20-Nov-2018 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T J=25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS -30 - - V V GS =0, I D =-250uA Gate Threshold Voltage V GS(th) -1 - -2.5 V V DS = V GS , I D = -250µA Gate-Body Leakage I GSS - - ±100 nA V DS = 0V, V GS = ±20V - - -1 µA V DS = -24V, V GS = 0V, T J=25°C Zero Gate Voltage Drain Current IDSS - - -5 µA V DS = -24V, V GS = 0V, T J=55°C - - 21 V GS = -10V, I D = -6A Drain-Source On-Resistance 4 R DS(ON) - - 32 mΩ VGS = -4.5V, I D = -4A Gate Resistance Rg - 15 - Ω f=1.0MHz Forward Transconductance g fs - 17 - S V DS = -5V, I D = -6A Total Gate Charge Q g - 12.6 - Gate-Source Charge Q gs - 4.8 - Gate-Drain Charge Q gd - 4.8 - nC ID = -6A VDS = -15V VGS = -4.5V Turn-On Delay Time T d(on) - 4.6 - Rise Time T r - 14.8 - Turn-Off Delay Time T d(off) - 41 - Fall Time T f - 19.6 - nS VDD = -15V, ID = -6A VGS= -10V, RG = 3.3Ω Input Capacitance C iss - 1345 - Output Capacitance C oss - 194 - Reverse Transfer Capacitance Crss - 158 - pF VDS = -15V VGS =0 f=1MHz Source-Drain Diode Continuous Source Current 1 I S - - -8 A Pulsed Source Current 3 I SM - - -50 A Diode Forward Voltage 4 V SD - - -1.2 V V GS =0V , I S= -1A , T J=25 ℃ Reverse Recovery Time t rr - 16.3 - nS Reverse Recovery Charge Q rr - 5.9 - nC IF= -6A , dI/dt=100A/µs , TJ=25 ℃ Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2. When mounted on Min. copper pad. 3. Pulse width limited by maximum junction temperature, Pulse Width ≤300µs, Duty Cycle≤2% 4. The data tested by pulsed, pulse width ≦ 300us, duty cycle ≦ 2%
-8A, -30 V , R DS(O/glyph1197) 21 m ΩΩ ΩΩ P-Ch Enhancement Mode Power MOSFET 20-Nov-2018 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
-8A, -30 V , R DS(O/glyph1197) 21 m ΩΩ ΩΩ P-Ch Enhancement Mode Power MOSFET 20-Nov-2018 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES