SSG4822J-C SECOS | Alldatasheet
Document overview
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Technical content
8.5A, 30V , R DS(ON) 16mΩ Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente 31-Oct-2017 Rev. D Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Q4822 ./box4/box4 /box4/box4 /box4/box4 /box4/box4 A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4822J-C provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
FEATURES
/circle6 Low On-Resistance /circle6 Simple Drive Requirement /circle6 Double-N Mosfet Package MARKING
PACKAGE INFORMATION
(TA=25° C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current @t≦10s 1 I D 8.5 A Pulsed Drain Current 2 IDM 30 A Power Dissipation PD 1.4 W Maximum Junction-Ambient @t≦10s 1 R θJA 89 ° C/W Operating Junction & Storage Temperature Range T J, T STG 150, -55~150 ° C Part Number Type SSG4822J-C Lead (Pb)-free and Halogen-free G S G S D D D D Date Code SOP-8 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 5. 79 6. 20 H 0.33 0.51 B 4.70 5. 11 J 0. 375 REF. C 3.80 4.00 K 45 °REF. D 0° 8° L 1.3 1. 75 2 E 0.40 1.27 M 0 0.25 F 0. 10 0. 25 N 0.25 REF. G 1.27 TYP.
8.5A, 30V , R DS(ON) 16mΩ Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente 31-Oct-2017 Rev. D Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Drain-Source Breakdown Voltage BV DSS 30 - - V V GS =0, I D =250 µA Zero Gate Voltage Drain Current I DSS - - 1 µA V DS =24V, VGS =0 Gate-Body Leakage Current I GSS - - ±100 nA V DS =0, VGS = ±20V Gate-Threshold Voltage V GS(th) 1 - 3 V V DS =V GS , ID =250 µA Drain-Source On-Resistance 3 R DS(ON) - - 16 m Ω VGS =10V, I D =8.5A - - 26 V GS =4.5V, I D =6A Forward Transfer Conductance 3 g fs - 20 - S V DS =5V, I D =8.5A Diode Forward Voltage 3 V SD - - 1 V I S=1A, V GS =0 Total Gate Charge 10V Q g - 23 - nC VDS =15V VGS =10V ID =8.5A 4.5V - 11.2 - Gate-Source Charge Q gs - 2.6 - Gate-Drain (“Miller”) Charge Q gd - 4.2 - Turn-on Delay Time T d(on) - 7.5 - nS VDS =15V VGS =10V R L=1.8 Ω R GEN =3Ω Rise Time T r - 6.5 - Turn-off Delay Time T d(off) - 25 - Fall Time T f - 5 - Input Capacitance C iss - 1250 - pF VDS =15V VGS =0 f=1MHz Output Capacitance C oss - 180 - Reverse Transfer Capacitance C rss - 110 - Notes: 1. The value of RθJA is measured with the device mounted on 1 inch 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25° C. The value in any given application depends on the user’s specific board design. The current rating is based on the t ≦10s thermal resistance rating. 2. Repetitive rating: Pulse width limited by junction temperature. 3. Pulse Test: Pulse width ≦300µs, duty cycle ≦2%.
8.5A, 30V , R DS(ON) 16mΩ Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente 31-Oct-2017 Rev. D Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE