SSG4575

SSG4575 SECOS | Alldatasheet

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• Simple Drive Requirement * Lower On-resistance Thermal Resistance Junction-ambient /W CRthj-a 62.5 o http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Thermal Data Parameter Symbol Ratings Unit 6.20 5.80 1.27Typ.0.35 0.49 4.80 5.00 0.25 Dimensions in millimeters 0.10~0.25 1.35 1.75 0.40 0.90 0.19 0.25 3.80 4.00

0.375 REF

o o o S1 G1 S2 G2 D1 D1 D2 D2 4575SS Date Code 578 2 3 4 SOP-8 * Fast Switching Performance 01-Jun-2002 Rev. A Page 1 of 7 The SOP-8 package is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. Elektronische Bauelemen Enhancement Mode Power Mos.FET te SSG4575 N Channel 6A, 60V,RDS(ON) 36m P Channel -4.2A, -60V,RDS(ON) 72m Ω Ω RoHS Compliant Product

Electrical Characteristics N Channel( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf 1670 160 117 m nC nS pF Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj Ω VGS=0V VDS=25V f=1.0MHz VDD=30V ID=1A VGS=10V RG=3.3 RD=30 Ω Ω ID=5A VDS=48V VGS=4.5V VGS=10V, ID=5A VGS=4.5V, ID=3A _ _ Forward Transconductance Gfs S VDS=10V, ID=4A_ 2670 C o C o o IDSS 0.04 60V,V 48V,V 1.0 3.0 100 V V/ Reference to 25C , ID=1mA oo C V nA uA uA VGS(th) IGSS VGS=0V, ID=250uA VGS= 20V± VDS= GS=0 VDS= GS=0 VDS=VGS, ID=250uA 01-Jun-2002 Rev. A Page 2 of 7 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width 300us, dutycycle 2%.≦≦ 3.Surface mounted on 1 in2 copper pad of FR4 board; 135 C/W when mounted on Min. copper pad. o Elektronische Bauelemen Enhancement Mode Power Mos.FET te SSG4575 N Channel 6A, 60V,RDS(ON) 36m P Channel -4.2A, - 60V,RDS(ON) 72m Ω Ω Source-Drain Diode Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage VDS __ IS=1.7A Is= 5A, V34 , VGS=0V.V nC nS 1.2 Reverse Recovery Time Reverse Recovery Charge GS=0V _ _ Trr Qrr dl/dt=100A/uS

Electrical Characteristics P-Channel( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Parameter Symbo Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf 1780 157 130 m nC nS pF Ω VGS=0V VDS=-25V f=1.0MHz VDS=-30V ID=-1A VGS=-10V RG=3.3 RD=30 Ω Ω ID=-4A VDS=-48V VGS=-4.5V VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A _ _ Forward Transconductance Gfs S6 VDS=-10V, ID=-4A_ C o C o o 2850 VGS(th) IGSS IDSS -60 -0.04 =-60V,V =-48V,V -1.0 100 -25 V V / V nA uA uA C o VGS=0V, ID=-250uA VGS= 20V± VDS GS=0 VDS GS=0 VDS=VGS, ID=-250uA Reference to 25 , ID=-1mA _ C o -3.0 01-Jun-2002 Rev. A Page 3 of 7 Elektronische Bauelemen Enhancement Mode Power Mos.FET te SSG4575 N Channel 6A, 60V,RDS(ON) 36m P Channel -4.2A, - 60V,RDS(ON) 72m Ω Ω Source-Drain Diode Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage VDS __ IS=-1.7A Is=-4A, V43 , VGS=0V.V nC nS -1.2 Reverse Recovery Time Reverse Recovery Charge GS=0V _ _ Trr Qrr dl/dt=100A/uS Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width 300us, dutycycle 2%.≦≦ 3.Surface mounted on 1 in2 copper pad of FR4 board; 135 C/W when mounted on Min. copper pad. o

01-Jun-2002 Rev. A Page 4 of 7 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Elektronische Bauelemen Enhancement Mode Power Mos.FET te SSG4575 N Channel 6A, 60V,RDS(ON) 36m P Channel -4.2A, -60V,RDS(ON) 72m Ω Ω Characteristics Curve N-Channel Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature

01-Jun-2002 Rev. A Page 5 of 7 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Elektronische Bauelemen Enhancement Mode Power Mos.FET te SSG4575 N Channel 6A, 60V,RDS(ON) 36m P Channel -4.2A, -60V,RDS(ON) 72m Ω Ω N-Channel Fig 9. Maximum Safe Operating Area Fig 8. Typical Capacitance Characteristics Fig 7. Gate Charge Characteristics Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 6 of 7 Elektronische Bauelemen Enhancement Mode Power Mos.FET te SSG4575 N Channel 6A, 60V,RDS(ON) 36m P Channel -4.2A, -60V,RDS(ON) 72m Ω Ω P-Channel Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 7 of 7 Elektronische Bauelemen Enhancement Mode Power Mos.FET te SSG4575 N Channel 6A, 60V,RDS(ON) 36m P Channel -4.2A, -60V,RDS(ON) 72m Ω Ω P-Channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform