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N-Ch: 6.5 A, 40 V , RDS(ON) 32 m P-Ch: -7.6 A, -40 V , RDS(ON) 30 m N & P-Ch Enhancement Mode Power MOSFET 27-Dec-2010 Rev. C Page 1 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low R DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,. printers, PCMCIA cards, cellular and cordless telephones
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space Fast switching speed High performance trench technology
PACKAGE INFORMATION
SOP-8 2.5K 13’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL N-CH P-CH Unit Drain-Source Voltage V DS 40 -40 V Gate-Source Voltage V GS 20 -20 V ID @ TA = 25°C 6.5 -7.6 A Continuous Drain Current 1 ID @ TA = 70°C 5.5 -6.3 A Pulsed Drain Current 2 I DM ±50 ±50 A Continuous Source Current (Diode Conduction) 1 I S 2.3 -2.1 A PD @ TA = 25°C 2.1 2.1 W Total Power Dissipation 1 PD @ TA = 70°C 1.3 1.3 W Operating Junction & Storage Temperature Range T J, TSTG -55 ~ 150 °C Thermal Resistance Ratings t≦ 10 sec 62.5 °C / W Maximum Junction-to-Ambient 1 Steady State RθJA 110 °C / W Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. A 5.8 6.20 H 0.35 0.51 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45 ° D0 ° 8 ° L 1.35 1.75 E 0.50 0.93 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. SOP-8
N-Ch: 6.5 A, 40 V , RDS(ON) 32 m P-Ch: -7.6 A, -40 V , RDS(ON) 30 m N & P-Ch Enhancement Mode Power MOSFET 27-Dec-2010 Rev. C Page 2 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Ch Min. Typ. Max. Unit Teat Conditions Static N 1 - - V DS= VGS, ID= 250μA Gate Threshold Voltage V GS(th) P -1 - - V VDS= VGS, ID= -250μA N - - ±100 V DS= 0V, VGS= 20V Gate-Body Leakage Current I GSS P - - ±100 nA VDS= 0V, VGS= -20V N - - 1 V DS= 32V, VGS= 0V Zero Gate Voltage Drain Current I DSS P - - -1 μA VDS= -32V, VGS= 0V N 25 - - V DS= 5V, VGS= 10V On-State Drain Current 1 I D(on) P -50 - - A VDS= -5V, VGS= -10V - - 32 V GS= 10V, ID= 6.5A N - - 42 V GS= 4.5V, ID= 5.7A - - 30 V GS= -10V, ID= -7.6A Drain-Source On-Resistance 1 R DS(ON) P - - 40 mΩ VGS= -4.5V, ID= -6.2A N - 40 - V DS= 15V, ID= 6.5A Forward Transconductance 1 g fs P - 31 - S VDS= -15V, ID= -7.6A Dynamic 2 N - 13 - Total Gate Charge Q g P - 14 - N - 3.3 - Gate-Source Charge Q gs P - 5.8 - N - 4.5 - Gate-Drain Charge Q gd P - 12 - nC N-Channel ID= 6.5A, VDS= 15V, VGS= 4.5V P-Channel I D= -7.6A, VDS= -15V, VGS= -4.5V N - 440 - Input Capacitance C ISS P - 1800 - N - 80 - Output Capacitance C OSS P - 280 - N - 130 - Reverse Transfer Capacitance C RSS P - 150 - pF N-Channel VDS= 15V, VGS= 0V, f= 1MHz P-Channel V DS= -15V, VGS= 0V, f= 1MHz N - 20 - Turn-On Delay Time T d(on) P - 15 - N - 9 - Rise Time T r P - 16 - N - 70 - Turn-Off Delay Time T d(off) P - 62 - N - 20 - Fall Time T f P - 46 - nS N-Channel VDD= 15V, VGS= 10V ID= 1A, RGEN= 25Ω P-Channel V DD= -15V, VGS= -10V ID= -1A, RGEN= 15Ω Notes 1. Pulse test ：PW ≦ 300 μs duty cycle ≦ 2%. 2. Guaranteed by design, not s ubject to production testing.
N-Ch: 6.5 A, 40 V , RDS(ON) 32 m P-Ch: -7.6 A, -40 V , RDS(ON) 30 m N & P-Ch Enhancement Mode Power MOSFET 27-Dec-2010 Rev. C Page 3 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES (N-Channel)
N-Ch: 6.5 A, 40 V , RDS(ON) 32 m P-Ch: -7.6 A, -40 V , RDS(ON) 30 m N & P-Ch Enhancement Mode Power MOSFET 27-Dec-2010 Rev. C Page 4 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
N-Ch: 6.5 A, 40 V , RDS(ON) 32 m P-Ch: -7.6 A, -40 V , RDS(ON) 30 m N & P-Ch Enhancement Mode Power MOSFET 27-Dec-2010 Rev. C Page 5 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES (P-Channel)
N-Ch: 6.5 A, 40 V , RDS(ON) 32 m P-Ch: -7.6 A, -40 V , RDS(ON) 30 m N & P-Ch Enhancement Mode Power MOSFET 27-Dec-2010 Rev. C Page 6 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES