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N-Ch: 8.3 A, 40 V , RDS(ON) 14 m P-Ch: -7.6 A, -40 V , RDS(ON) 28 m N & P-Ch Enhancement Mode Power MOSFET 27-Dec-2010 Rev. B Page 1 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low R DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space Fast switching speed High performance trench technology
PACKAGE INFORMATION
SOP-8 2.5K 13’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL N-CH P-CH Unit Drain-Source Voltage V DS 40 -40 V Gate-Source Voltage V GS 20 -20 V ID @ TA = 25°C 8.3 -7.6 A Continuous Drain Current 1 ID @ TA = 70°C 6.8 -6.3 A Pulsed Drain Current 2 I DM ±50 ±50 A Continuous Source Current (Diode Conduction) 1 I S 2.3 -2.1 A PD @ TA = 25°C 2.1 2.1 W Total Power Dissipation 1 PD @ TA = 70°C 1.3 1.3 W Operating Junction & Storage Temperature Range T J, TSTG -55 ~ 150 °C Thermal Resistance Ratings t≦ 10 sec 62.5 °C / W Maximum Junction-to-Ambient 1 Steady State RθJA 110 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. A 5.8 6.20 H 0.35 0.51 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45 ° D0 ° 8 ° L 1.35 1.75 E 0.50 0.93 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. SOP-8
N-Ch: 8.3 A, 40 V , RDS(ON) 14 m P-Ch: -7.6 A, -40 V , RDS(ON) 28 m N & P-Ch Enhancement Mode Power MOSFET 27-Dec-2010 Rev. B Page 2 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Ch Min. Typ. Max. Unit Teat Conditions Static N 1 1.5 3 V DS= VGS, ID= 250μA Gate Threshold Voltage V GS(th) P -1 -1.4 -3 V VDS= VGS, ID= -250μA N - 6 ±100 V DS= 0V, VGS= 20V Gate-Body Leakage Current I GSS P - 7 ±100 nA VDS= 0V, VGS= -20V N - 2nA 1 V DS= 32V, VGS= 0V Zero Gate Voltage Drain Current I DSS P - 12nA -1 μA VDS= -32V, VGS= 0V N 25 - - V DS= 5V, VGS= 10V On-State Drain Current 1 I D(on) P -50 - - A VDS= -5V, VGS= -10V - 14 22 V GS= 10V, ID= 8.3A N - 17 27 V GS= 4.5V, ID= 7.3A - 28 30 V GS= -10V, ID= -7.6A Drain-Source On-Resistance 1 R DS(ON) P - 35 40 mΩ VGS= -4.5V, ID= -6.2A N - 40 - V DS= 15V, ID= 8.3A Forward Transconductance 1 g fs P - 31 - S VDS= -15V, ID= -7.6A Dynamic 2 N - 13 30 Total Gate Charge Q g P - 14 30 N - 3.3 7 Gate-Source Charge Q gs P - 5.8 12 N - 4.5 10 Gate-Drain Charge Q gd P - 12 30 nC N-Channel ID= 8.3A, VDS= 15V, VGS= 4.5V P-Channel ID= -7.6A, VDS= -15V, VGS= -4.5V N - 1317 3000 Input Capacitance C iss P - 1583 4000 N - 272 600 Output Capacitance C oss P - 278 600 N - 169 400 Reverse Transfer Capacitance C rss P - 183 400 pF N-Channel f= 1MHz, VDS= 15V, VGS= 0V P-Channel f= 1MHz, VDS= -15V, VGS= 0V N - 20 40 Turn-On Delay Time T d(on) P - 15 30 N - 9 20 Rise Time T r P - 16 40 N - 70 200 Turn-Off Delay Time T d(off) P - 62 200 N - 20 40 Fall Time T f P - 46 100 nS N-Channel VDD= 15V, VGS= 10V ID= 1A, RGEN= 25Ω P-Channel V DD= -15V, VGS= -10V ID= -1A, RGEN= 15Ω Notes: 1. Pulse test ：PW ≦ 300 μs duty cycle ≦ 2%. 2. Guaranteed by design, not s ubject to production testing.
N-Ch: 8.3 A, 40 V , RDS(ON) 14 m P-Ch: -7.6 A, -40 V , RDS(ON) 28 m N & P-Ch Enhancement Mode Power MOSFET 27-Dec-2010 Rev. B Page 3 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES (N-Channel)
N-Ch: 8.3 A, 40 V , RDS(ON) 14 m P-Ch: -7.6 A, -40 V , RDS(ON) 28 m N & P-Ch Enhancement Mode Power MOSFET 27-Dec-2010 Rev. B Page 4 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
N-Ch: 8.3 A, 40 V , RDS(ON) 14 m P-Ch: -7.6 A, -40 V , RDS(ON) 28 m N & P-Ch Enhancement Mode Power MOSFET 27-Dec-2010 Rev. B Page 5 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES (P-Channel)
N-Ch: 8.3 A, 40 V , RDS(ON) 14 m P-Ch: -7.6 A, -40 V , RDS(ON) 28 m N & P-Ch Enhancement Mode Power MOSFET 27-Dec-2010 Rev. B Page 6 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES