SS9016 SAMSUNG | Alldatasheet
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$S9016 NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER, FM/RF AMPLIFIER OF — LOW NOISE. | To-02 * High total power dissipation. (PT=400mW) ABSOLUTE MAXIMUM RATINGS (T.=25°C) Collector-Base Voltage | Veo 30 v Collector-Emitter Voltage Veco 20 v Emitter-Base Voltage Veso 4 v | Collector Current | ke 25 mA ' Collector Dissipation Po 400 mw | | Junction Temperature ul 150 °C Storage Temperature Tstg -s5~150 | °C + enn 2,3. comce ELECTRICAL CHARACTERISTICS (T,=25°C) Colector-Base Breakdown Voltage | BVcoo | fe=100uA, k=O 30 v Collector-Emitter Breakdown Voltage | BVceo k= 1mMA, ls=O 20 | v Emitter-Base Breakdown Voltage BVe50 | le=1004A, lo=0 4 v Collector Cutoff Current kcvo Vea=30V, k=O 100 | nA Emitter Cutoff Current eso Veo=3V, lc=0 100 | nA DC Current Gain tee Vce=5V, I= 1mA 28 90} 198 | Collector-Emitter Saturation Voltage Voe(sat) k= 10MA, le=1mA 0.1 03 | Vv Base-Emitter On Voltage Var (on) | Vee=5V. lo=1mA 0.72 v Output Capacitance Cop Vea=10V, le=0 | 12 | 16 | pF f=1MHz | Current Gain-Bandwidth Product | tr Vee=5V, [o= tm | 400 | 620 Miz Noise Figure NF Voe=5V, le=1,0nA 30 | 5.0 | aB f=100MHz, Rs=50° hre CLASSIFICATION Classification) D pele[c| Hot - - 1 Dre | 28-45 97-146 | 132-198 a ” ELECTRONICS = WM 7964142 0025199 ?bb Ml ee
$S9016 NPN EPITAXIAL SILICON TRANSISTOR ‘STATIC CHARACTERISTIC BASE-EMITTER ON VOLTAGE a POSS (se EE ricoh | Ea SS SESS (=== ook So os or a a 6 eee ete iS f eoco 2 a 8 CCCeCe EEL i : PH YE 7/0 2 eee ===== == SS { FERRE] EEEEEEEREEFEH (REE | i =e COC Aas LEE vin, couterontatren vonee van tseerenvouraoe DC CURRENT GAIN CURRENT GAIN-BANDWIDTH PRODUCT Se) 10000 § $e a ——— eo ee ax i Pg 2 a a | ,
100 St 2 soo i
es —— os Ei A 1 oA | == = 0 a ie UE LTTE) * SER =F tt wd es {mA}, COLLECTOR CURRENT ima), COLLECTOR CURRENT eG LONE EA StnthR Voce COLLECTOR OUTPUT CAPACITANCE se a fete | Fs eT wk | A a a Se 2 osf——eH i OA coor 2 oe e°CooM oA > Come eed oti on] j oe a ee j of HT Pa maith emetic UTTER RERE ie ec | of OTP cg a i cot LE TTT TT oo LEI I} win, coueeron cunt vatn couscronaee vOLTaE a “ ELECTRONS «gg 7964142 OO25200 208