SS9012 SAMSUNG | Alldatasheet
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| SAMSUNG SEMICONDUCTOR. INC LYE O | 21buL4e2 ooozaaa + I - | $$S9012 PNP EPITAXIAL SILICON TRANSISTOR i 1W OUTPUT AMPLIFIER OF POTABLE | RADIOS IN CLASS - 70.02 j B PUSH-PULL OPERATION. 7 i * High total power dissipation: (PT=625mW) . H * High Collector Current. (lc=-500mA) { * Complementary to $$8013 i * Excellent bs linearity. | ABSOLUTE MAXIMUM RATINGS (T, =25°C) i ‘ Collector-Base Voltage Veso -40 Vv Collector-Emitter Voltage Veeo -20 Vv Emitter-Base Voltage Veso ’ -6 v Collector Current Io 500 mA ‘Collector Dissipation Po 625 mw 1. Emitter 2. Base 3. Collector Junction Temperature ul 150 °c 3 ‘Storage Temperature Tatg 551 50 °c ELECTRICAL CHARACTERISTICS (T.=25°C) [eis [rei [Toon | on [ow [oor] Collector-Base Breakdown Voltage BVce0 ie=—100pA, k=O 40 v Collector-Emitter Breakdown Voltage | BVceo ic=—1mA, l=O ~20 v Emitter-Base Breakdown Voltage: BV eso le=—100pA, Ic=O -5 v Collector Cutoff Current leo Vea=—25V, le=O =100 nA Emitter Cutoff Current exo. Vea=—3V, "k=O -100 nA OC Current Gain Pret Vee=—1V, le=—50mA 64 120 202 tre2 | Vee=—1¥, le=—500mA 40 90 Collector-Emitter Saturation Voltage Vee(sat) | lb-=~500mA, lp=—50mA -0.18 -0.6 Vv Base-Emitter Saturation Voltage Vpe(sat) k=—500MA, l=—50mA ~0.95 1.2 Vv Base-Emitter On Voltage Vee(on) | Vce#~1V, b=—10mA 0.6 | -0.67 -O7 Vv hre (1) CLASSIFICATION ‘ eee & SAMSUNG SEMICONDUCTOR 669
| SAMSUNG SEMICONDUCTOR INC ue o Pp zaeunu2 ooozvoo 7 ff | - $9012. - PNP EPITAXIAL SILICON TRANSISTOR t . T-31-21 : STATIC CHARACTERISTIC . = DC CURRENT GAIN: >, - ~ ; “ i 00, | ee dL 1 [| a "Certo se CEI i auPr=se Fy a | eee pI TTT att | 3 eee Poe SSS a H -10 eee eee i ae | | Fa ae | | ceeeeeeee eee eee a Se cae “a0 no ~So0 -¥08 —Ito - VerfV, COLLECTOREMTTER VOLTAGE . mA), COLLECTOR CURRENT oe z CTT TE Trt Tt mci memes Stim eT TM All 6) Se 7? SSS © 2 Cocco aeeee ements om a 3 ee SEEEHH = Hy etic 2 cc a os eee Sota 1 0 EB sausunc SEMICONDUCTOR . rn 670
SAMSUNG SEMICONDUCTOR INC L4HE D | kan ooo74o1 49 I T-3)/- 27 _ $$9013 NPN EPITAXIAL SILICON TRANSISTOR . 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS To-92+ B PUSH-PULL OPERATION. * High total power dissipation. (PT=625mW) * High Collector Current. (le=600mA) , : * Complementary to SS9012 Ro oe + Excellent bye linearity. Pn) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) LE 4 Collector-Base Voltage Veso 40 v Collector-Emitter Voltage Veeo 20 v Emitter-Base Voltage Ves _ 5 Vv .
1 Collector Current Ie 500 mA
t Collector Dissipation Pc 625 mW 1. miter 2, Base 9, Cotector | Junction Temperature. a] 150 °c : : 3 | Storage Temperature Tstg -55~150 | °C ' > : ELECTRICAL CHARACTERISTICS (T,=25°C) [esas Tov see [om [ie [oo Collector-Base Breakdown ‘Voltage BYcs0 k= 100A, le=O 40 Vv _ | Collector-Emitter Breakdown Voltage | BVceo | b= 1mA, =O 20 v Emitter-Base Breakdown Voltage | BVeo | fe= 100A, lo=0 5 v Collector Cutoff Current eso Vea=25V, le=O 100 nA Emitter Cutoff Current |. leo Ves=3V, =O 100 nA DC Current Gain fret Voe=1V, =5OmA 64 120 202 Fre? | Vee 1V, lo=500mA 40 | 120 Collector-Emitter Saturation Voltage Vee(sat) | lc=500mA, le=SOmA 0.16 06 v : Base-Emitter Saturation Voltage Vee(sat) | l= 600mA, l= 50mA o91 | 12°} v “Base-Emitter On Voltage Veelon) | Vee=1V, = 10mA o6 | 067 | o7 | v ; hre (1) CLASSIFICATION : i : an 1 eG sausuna SEMICONDUCTOR eri i i
_ SAMSUNG SEMICONDUCTOR. INC hue o ff aeyau2 ooo7zwo2 o ff $s9013 NPN EPITAXIAL SILICON TRANSISTOR (‘1-31-21 STATIC CHARACTERISTIC (00 CURRSNT. CAN pammmee wim MR ASS eee eto | GU * Peete | Sasest i een mea mm ! 1 SEReEE en SFM CLIT Ete yyy | CTT CI TT VAT rn a a Ta 8 10° 050 100 300 1000 9000, 10000 - ‘Vex{V}, COLLECTOR-EMITTER VOLTAGE ‘ . ‘eimA}, COLLECTOR CURRENT ase Mirren saruMATiON VOLTAGE cunnent aaitaannina pROoUCT : oe Sd see ssi eesti ee Tii Sasi mee tiie eile soo EHH Pe 3s ESHA Eee Eo So TTR HHH i CT nn CT Fea “CRE TREE HE He
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SAMSUNG SEMICONDUCTOR INC — 24E D i eaeunue ooo74o I rany ss9014 NPN EPITAXIAL SILICON TRANSISTOR SSS PRE-AMPLIFIER, LOW LEVEL & LOW NOISE + High total power dissipation. (PT=450mW) TO-92 © High bee and good linearity © Complementary to SS9015 . ABSOLUTE MAXIMUM RATINGS (T, =25°C) See | Collector-Base Voltage Veso 60 v 1 Collector-Emitter Voltage Veeo 46 v ‘ . Emitter-Base Voltage Vepo 6 Vv Collector Current le 100 mA Collector Dissipation Pc 450 mw Junction Temperature: TI 150 °c Storage Temperature Tstg ~55~150 °c 1. Emitter 2. Base 3. Collector | . ELECTRICAL CHARACTERISTICS (T.=25°C) [cane [oman [Tow cnts [ wn [we [we | or] - Collector-Base Breakdown Voltage BV ceo to=100pA, =O 50 v Collector-Emitter Breakdown Voltage | BVceo ko=1mA, le=O 45 v Emitter-Base Breakdown Voitage BVeso le=100pA, =O 5 Vv Collector Cutoff Current keeo Vea™50V, le=O 50 |. nA Emitter Cutoff Current leso Vee=5V, k=O 50 nA DC Current Gain Dee Vee=5V, ko 1mA 60 280 1000 Collector-Base Saturation Voltage Vee(sat) | l-=100mA, Ia=SmA 0.14 0.3 v Base-Emitter Saturation Voltage Vee(sat) c= 100mA, fn=5mA 0.84 1.0 Vv Base-Emitter On Voltage Vee(on) | Vce=5V, lo=2mA 0.58 | 0.63 O7 v Output Capacitance Cob Vea=10V, le=O 2.2 3.5 pF f=1MHz Current Gain-Bandwidth Product tr Vee™ SV, c= 10mA 150 270. MHz Noise Figure: 7 NF Vee=5V, lo 0.2mA 0.9 10 dB f=1KHz, Re=2K0 hee CLASSIFICATION = 6 —_— & SAMSUNG SEMICONDUCTOR 673
SAMSUNG SEMICONDUCTOR INC Lue o PP 2ae4z42 ooozuo4 4 I . $S9014 NPN EPITAXIAL SILICON TRANSISTOR aq- 19 EF EERE ~A-GH-AHH--4) EHC so} Jes T40,A. es |e rin Mio CLC oo i “Ur Lie LCL a TT an/ee pyre LT Zo L 5 |= TI FHMC CTI . “A CC en CT TH PETTITT Ti TELL tthti«s | ae a VedV), COLLECT-EMITTER VOLTAGE ‘ Ima), COLLECTOR CURRENT COPA OM TER SA SATURATION Ve a GE CURRENT GAIN-BANDWIDTH PRODUCT 1000 (oo a fo SREH eg ESSE ere Ht z= a | 3 PE 3 cook EP = oof pe 3 mai maui i Leet CTT CT i VOT Il mT a ZO = Sei e il at a i fine BE fee EET go SEE
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. = UII Teese il Fi | nil > CUMIN * CTI VTE “ 25 0 30 50 100 © 300 1000, * 35 0 30 50 100 «300 1000 cma), COLLECTOR CURRENT IcfmA), COLLECTOR CURRENT oo rH SAMSUNG SEMICONDUCTOR 674