SS8550-TO-92 HDSEMI | Alldatasheet

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H igh Diode Semiconductor TO- 9 2 Symbol Parameter Value Unit V Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ CLASSIFICATION OF h FE (2) Electrical Characteristics (T=25℃ Unless otherwise specified） TRANSISTOR( P NP ) CBO TO-92 Plastic-Encapsulate Transistors E B C SS8550 Complimentary to SS8050 Collector Current: I C =-1.5A -1.5 A Rank B C D D3 Range 85-160 120-200 160-300 300-400 P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-100uA, I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-0.1mA, I B =0 -25 V Emitter-base breakdown voltage V (BR)EBO I E =-100μA, I C =0 -5 V Collector cut-off current I CBO V CB =-40V, I E =0 -0.1 μA Emitter cut-off current I CEO V CE =-20V, I E =0 -0.1 μA Emitter cut-off current I EBO V EB =-5V, I C =0 -0.1 uA h FE(1) V CE =-1V, I C =-100mA 85 400 DC current gain h FE(2) V CE =-1V, I C =-800mA 40 Collector-emitter saturation voltage V CE(sat) I C =-800mA, I B =-80mA -0.5 V Base-emitter saturation voltage V BE(sat) I C =-800mA, I B =-80mA -1.2 V Base-emitter voltage V BE(on) V CE =-1V, I C =-10mA -1 V Out capacitance Co b V CB =-10V, I E =0mA,f=1MH Z 20 pF Transition frequency f T V CE =-10V, I C =-50mA,f=30MH Z

100 MHz

H igh Diode Semiconductor Typical Characteristics -1 -10 -100 -1000 100 1000 -0 -1 -2 -3 -50 -100 -150 -200 -250 -1 -10 -100 -1000 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -10 -100 -1000 -1 -10 -100 -1000 -10 -100 -1000 -2 -10 -100 100 1000 -0.1 -1 -10 100 -1500 T a =25 -300 T a =100 COMMON EMITTER V CE =-1V h FE — — I C 300 -30-3 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) COMMON EMITTER T a =25 Static Characteristic -1.0mA -0.7mA -0.9mA -0.6mA -0.5mA -0.8mA -0.4mA -0.3mA -0.2mA I B =-0.1mA COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) -1500-300 T a =100 T a =25 β=10 -30-3 V BEsat — — I C BASE-EMMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) P C —— T a COLLECTOR POWER DISSIPATION P C (W) AMBIENT TEMPERATURE T a ( ) -1500 -300 T a =100 T a =25 -30 COMMON EMITTER V CE =-1V COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V) -1500 -300 T a =100 -300 -30 -30-3 V CEsat — — I C β=10 T a =25 COLLECTOR-EMMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) f T — — I C 300 -30-6 COMMON EMITTER V CE = -10V T a =25 TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) V CB / V EB I C — — V BE C ob C ib -0.3 -20-3 f=1MHz I E =0/I C T a =25 C ob / C ib — — CAPACITANCE C (pF) REVERSE BIAS VOLTAGE V (V)

H igh Diode Semiconductor Package Outline Dimensions Suggested Pad Layout TO- 9 2 TO- 9 2 SYMBOL MIN MAX SYMBOL MIN MAX A 4.1 4.3 K 0.36 0.56 B R2.0 R2.2 L 1.35 1.45 C 4.1 M 12.00 12.5 D 1.1 1.2 N 1.24 1.3 E 3.13 3.33 O 5° F Φ1.48 Φ1.52 P 5° G 4.4 4.6 Q 0.37 0.39 H 2.2 2.3 I 0.36 0.56 J 0.5 0.6 单位：mm

H igh Diode Semiconductor TO-92 7DSHDQG5HHO Packge Box Box Size(mm) Carton Carton Size(mm) TO-92 2000PCS 343×158×42 20000PCS 470×358×180 Symbol mm Inches Min Nom Max Min Nom Max P 12.4 — 13 0.488 — 0.512 F1,F2 2.75 3.00 3.25 F3,F4 2.75 3.00 3.25 ︱ F1-F2︱ — — 0.4