SS8550--SOT-323 HDSEMI | Alldatasheet

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Marking: H igh Diode Semiconductor SOT- 3 23 Symbol Parameter Value Unit V Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current PC Collector Power Dissipation 200 mW RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ CLASSIFICATION OF h FE Electrical Characteristics (Ta=25℃ Unless otherwise specified） SS8550 SOT-323 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) -1.5 A CBO B EC Rank L H J Range 120-200 200-350 300-400 EB High Collector Current Complementary to SS8050 Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO I C=-100µA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO I C=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO I E=-100µA, IC=0 -5 V Collector cut-off current ICBO V CB=-40V, IE=0 -100 nA Collector cut-off current ICEO V CE=-20V, IB=0 -100 nA Emitter cut-off current IEBO V EB=-5V, IC=0 -100 nA hFE(1) V CE=-1V, IC=-100mA 120 400 DC current gain hFE(2) V CE=-1V, IC=-800mA 40 Collector-emitter saturation voltage VCE(sat) I C=-800mA, IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) I C=-800mA, IB=-80mA -1.2 V Base-emitter voltage VBE V CE=-1V, IC=-10mA -1 V Transition frequency fT V CE=-10V,IC=-50mA , f=30MHz 100 MHz Collector output capacitance Cob V CB=-10V, IE=0, f=1MHz 20 pF

H igh Diode Semiconductor Typical Characteristics -1 -10 -100 -1000 -10 -100 -1000 -1 -10 -100 -1000 -100 -1000 -0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 -0.35 -0.40 -200 -400 -600 -800 -1000 -1200 -10 -100 -1000 -1 -10 -100 -1000 100 1000 -0.1 -1 -10 100 -1 -10 -100 100 1000 0 25 50 75 100 125 150 100 150 200 250 -1500 Ta=100 Ta=25 β=10 I C V CEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) -300 I C V BEsat Ta=25 Ta=100 BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) -1500 β=10 COLLECTOR CURRENT I C (mA) -2000 COMMON EMITTER Ta=25 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) Static Characteristic -2mA -1.8mA -1.6mA -1.4mA -1.2mA -1mA -800uA -600uA -400uA I B =-200uA I C V BE Ta=100 Ta=25 V CE =-1V COLLCETOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (mV) -1500 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) Ta=100 Ta=25 V CE =-1V I C h FE -1500 Cob Cib V CB / V EB C ob / C ib REVERSE VOLTAGE V (V) CAPACITANCE C (pF) f=1MHz I E =0/I C Ta=25 -20 I C f T V CE =-10V Ta=25 TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT I C (mA) COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) P C —— T a

H igh Diode Semiconductor Package Outline Dimensions SOT-323 Suggested Pad Layout SOT-323 Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP

Reel Taping Specifications For Surface Mount Devices-SOT-323 H igh Diode Semiconductor