SS8550-SOT-23 HDSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

Marking: H igh Diode Semiconductor SOT- 23 Symbol Parameter Value Unit V Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current PC Collector Power Dissipation 300 mW RΘJA Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RANK L H J RANGE 120-200 200-350 300-400 CLASSIFICATION OF h FE Electrical Characteristics (T=25℃ Unless otherwise specified） Complimentary to SS8050 Collector Current: I C =-1.5A SS8550 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) -1.5 A Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -100 nA Collector cut-off current ICEO VCE=-20V, IB=0 -100 nA Emitter cut-off current IEBO VEB=-5V, IC=0 -100 nA hFE(1) VCE=-1V, IC=-100mA 120 400 DC current gain hFE(2) VCE=-1V, IC=-800mA 40 Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V Base-emitter voltage VBE VCE=-1V, IC=-10mA -1 V Transition frequency fT VCE=-10V,IC=-50mA , f=30MHz 100 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 20 pF EB C CBO

H igh Diode Semiconductor Typical Characteristics -200 -300 -400 -500 -600 -700 -800 -900 -1000 -0.1 -10 -100 -1000 -20 -40 -60 -80 -100 -120 -140 -160 -180 -200 -300 -400 -500 -600 -700 -800 -900 -1000 100 -1 -10 -1 -10 -100 -1000 -10 -100 -1000 -1 -10 -100 100 0 25 50 75 100 125 150 100 150 200 250 300 350 VCE=-1V Ta=25 Ta=100 o C I C V BE BASE-EMMITER VOLTAGE V BE (mV) COLLCETOR CURRENT I C (mA) 1mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA I B =0.1mA Static Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) β=10 Ta=25 Ta=100 BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURRENT I C (mA) I C V BEsat Ta=100 Ta=25 500 V CE =-1V DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C h FE C ob C ib 100 -0.2 f=1MHz I E =0/ I C Ta=25 o C V CB / V EB C ob / C ib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) Ta=25 0.2 Ta=100 β=10 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) I C V CEsat TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT I C (mA) VCE-10V Ta=25 o C I C fT —— 500 Pc —— Ta COLLECTOR POWER DISSIPATION Pc (mW) AMBIENT TEMPERATURE Ta ( )

H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23

Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor