SS8550 KOOCHIN | Alldatasheet
Document overview
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Technical content
SS8550 TRANSISTOR (PNP)
FEATURES
MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N M A X U N I T Collector-base breakdown voltage V(BR)CBO I C=-100μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO I C=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO I E=-100μA, IC=0 -5 V Collector cut-off current I CBO V CB=-40V, IE=0 -0.1 μA Collector cut-off current I CEO V CE=-20V, IB=0 -0.1 μA Emitter cut-off current I EBO V EB=-5V, IC=0 -0.1 μA hFE(1) V CE=-1V, IC=-100mA 120 400 DC current gain hFE(2) V CE=-1V, IC=-800mA 40 Collector-emitter saturation voltage VCE(sat) I C=-800mA, IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) I C=-800mA, IB=-80mA -1.2 V Base-emitter on voltage VBE(on) I C=-1V,VCE=-10mA -1 V Base-emitter positive favor voltage VBEF I B=-1A -1.55 V Transition frequency fT VCE= -10V, I C= -50mA f=30MHz
100 MHz
output capacitance Cob (V CB=-10V,IE=0,f=1MHz) 20 pF CLASSIFICATION OF h FE(1) Rank L H J Range 120-200 200-350 300-400 SOT-23 1. Base 2.Emitter 3.Collector
Typical characteristics SS8550