S9015 KOOCHIN | Alldatasheet

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Technical content

S9015 TRANSISTOR (PNP)

FEATURES

MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO I C = -0.1mA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO V CB=-50 V, IE=0 -0.1 μA Emitter cut-off current IEBO V EB= -5V, IC=0 -0.1 μA DC current gain hFE V CE=-5V, IC= -1mA 200 1000 Collector-emitter saturation voltage VCE(sat) I C=-100mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) I C=-100mA, IB=-10mA -1 V Transition frequency fT VCE=-5V, I C= -10mA f=30MHz

150 MHz

  1. BASE 2. EMITTER 3. COLLECTOR

Typical Characteristics S9015