SS82B HDSEMI | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
o
- VRRM 20V-100V
- High surge current capability
Applications
- Rectifier From 2 To 10X Marking Polarity: Color band denotes cathode SS8X H igh Diode Semiconductor SMB er Notes: copper pad areas Schottky Rectifier Electrical Characteristics (T =25℃ Unless otherwise specified） a SS82 THRU SS810 SS8 Item Symbol Unit Conditions Repetitive Peak Reverse Voltage V RRM V Average Forward Current I F(AV) A 60Hz Half-sine wave, Resistance 8.0 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave,1 cycle, Ta=25℃ 200 Junction Temperature T J Storage Temperature T STG ℃ -55 ~ +150 20 30 40 50 60 80 100 20 30 40 50 60 80 100 load, TL(Fig.1) V 14 21 28 35 42 56 70 V RMS SS8 Item Symbol Unit Test Condition Peak Forward Voltage V FM V I FM I RRM1 Ta=25℃ 0.1 Peak Reverse Current I RRM2 mA V RM RRM Ta=100℃ 20 R θJ-A Between junction and ambient 25 Thermal Resistance(Typical) R θJ-L /W℃ Between junction and lead 3 20 30 40 50 60 80 100 0.5 Maximum RMS Voltage
H igh Diode Semiconductor FIG.1: FORWARD CURRENT DERATING CURVE IO(A) TL( IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS VF(V) FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(mA) IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT 0 25 50 75 100 125 150 175 Single Phase Half Wave 60Hz Resistive or inductive Load SS85-SS810 SS82-SS84 200 160 120 1 10 100 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 0.01 0.1 SS85-SS86 SS82-SS84 SS88-SS810 TJ=25 C PULSE WIDTH=300 ms 1%DUTY CYCLE 0 20 40 60 80 100 100 0.1 0.01 0.001 TJ=25 C TJ=100 C TJ=75 C
H igh Diode Semiconductor Dimensions in inches and (millimeters) 0.087 (2.20) 0.071 (1.80) 0.180(4.57) 0.160(4.06) 0.155(3.94) 0.130(3.30) 0.060(1.52) 0.030(0.76) 0.220(5.59) 0.205(5.21) 0.012(0.305) 0.006(0.152) 0.008(0.203)MAX. 0.096(2.44) 0.084(2.13) 4.26 1.8 SMB SMB
Reel Taping Specifications For Surface Mount Devices-SMB H igh Diode Semiconductor