SS52C DSK | Alldatasheet
Document overview
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Technical content
3.1± 0.25 6.9± 0.25 5. 9 ± 0. 25 2. 3 ± 0. 15 1. 3± 0. 25 0.203MAX 7.8± 0. 2 0.25± 0.06
FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified Maximum recurrent peak reverse voltage V RRM 40 50 60 V Max imum RMS v oltage V RWS 28 35 42 V Maximum DC blocking voltage V DC V Maximum average forw ord rectified current at c T L (SEE FIG.1) (NOTE 2) I (AV) A Peak forw ard surge current 8.3ms single half- c sine-w ave superimposed on rated load(JEDEC c Method) I FSM A Maximum instantaneous forw ard voltage at v 5.0A(NOTE.1) V F V Maximum DC reverse current @T A =25 o C at rated DC blockjing voltage(NOTE1) @T A =100 o C R θ JA R θ JL Operating junction temperature range T J o C Storage temperature range T STG o C 0.5 I R NOTE: 1.Pulse test:300 μS pulse width,1%duty cy cle SS52C - - - SS510C )copper pad areas REVERSE VOLTAGE: 20 --- 100 V CURRENT: 5.0 A ◇ Built-in strain relief ◇ Case:JEDEC SMC,molded plastic over 1111pass ivated chip ◇ Low power loss ,high effciency ◇ Plastic package has Underwriters Laborator
111 Flammability Classification 94V-0
Typical thermal resitance (NOTE2) o C/W ◇ High temperature soldering guaranteed:250 o C/10 1 11 seconds at terminals ◇ Polarity: Color band denotes cathode end ◇ Weight: 0.007 ounces, 0.21 gram mA UNITS SMC ◇ Low profile package ◇ For surface mounted applications 20 30 40 50 60 80 90 100 14 21 ◇ Terminals:Solder Plated, solderable per MIL-STD-750, 1111Method 2026 ◇ High current capability,low forward voltage drop 175 5.0 ◇ For use in low voltage high frequency inverters,free 111 wheeling and polarity protection applications ◇ Guardring for overvoltage protection -55--- +150 -55--- +150 0.55 0.70 20 10 ◇ Metal silicon junction, majority carrier conduction ◇ High surge capability Dimensions in millimeters SS52C SS53C SS54C SS55C SS56C SS58C SS59C SS510C 80 90 100 56 63 70 0.85 BARRIER RECTIFIER S SURFACE MOUNT SCHOTTKY Diode Semiconductor Korea www.diode.kr
2.5 Resistive or inductive Load P.C.B.MOUNTED ON 0.2X0.2(5.0X5.0mm) COPPERPAD AREAS 5.0 60 70 80 90 100 110 120 130 140 150 160 170 TJ = 125 TJ = 25 0 20 40 60 80 100 120 140 .01 .05 1.0 5.0 T J =25 Pulse width=300 s 1% duty Cycle SS52C-SS54C SS55C-SS56C SS58C-SS510C AVERAGE FORWARD RECTIFIED CURRENT,AMPERES PEAK FORWARD SURGE CURRENT,AMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES INSTANTANEOUS REVERSE CURRENT,MICROAMPERES NUMBER OF CYCLES AT 60HZ INSTANTANEOUS FORWARD VOLTAGE,VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE,％ AMBIENT TEMPERATURE ℃ SS52C - - - SS510C FIG.3 -- TYPICAL FORWARD CHARACTERISTICS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS FIG.1 -- FORWARD DERATING CURVE FIG.2-- PEAK FORWARD SURGE CURRENT 1 100 8.3ms Single Half Sine Wave T J =125 105 140 175 www.diode.kr Diode Semiconductor Korea