SS2609

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Hall Latch - High Sensitivity 1 V3.10 Nov 1, 2013 Features and Benefits – CMOS Hall IC Technology – Bipolar Output CMOS Multi -purpose latch – Solid-State Reliability much better than reed switch – Operation down to 2.5V – Supply current down to 45μ A, very low power consumption – CMOS inverter output (no pull -up resistance) – High sensitivity for direct reed switch r e- placement application Application Examples – Solid state switch – Magneto -electric conversion switch – Magnet proximity sensor for reed switch r e- placement in low duty cycle applications 3 pin TSOT23 (suffix STT) 3 pin SIP (suffix UA) Functional Block Diagram

Hall Latch - High Sensitivity 2 V3.10 Nov 1, 2013 General Description The SS2609 Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and analog signal processing circuits. This serves to place the high current -consuming portions of the circuit into a “Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall element is evaluated against the predefined thresholds. If the flux density is above or below the B op/Brp thresholds then the output transistor is driven to change states accordingly. While in the “Sleep” cycle the output transistor is latched in its previous state. The design has been optimized for service in applications requiring extended operating lifetime in battery powered systems. The output transistor of the SS2609 switches low (turns on) when a magnetic field perpendicular to the Hall sensor exceeds the operate point threshold (B OP). After turn-on, the output voltage is V DS. The device remains on if the south pole is removed (B→0). This l atching property defines the device as a magnetic memory. When the magnet- ic field is reduced below the release point, B RP, the Output transistor turns off (goes high). The difference in the magnetic operate and release points is the hysteresis (B HYS) of the device. This built -in hysteresis prevents output oscillation near the switching point, and allows clean switching of the output even in the presence of external m e- chanical vibration and electrical noise. The TSOT-23 device is reversed from the UA pack age. The T SOT-23 output transistor will be latched on in the presence of a sufficiently strong North pole magnetic field applied to the marked face. Glossary of Terms Internal Timing Circuit 0mT 0mT Output level Output level OUT = High Flux density OUT = High BOP 25Gs typ OUT = Low OUT = Low UA package - Latch characteristic BOP 25Gs typ BRP -25Gs typ Flux density STT package - Latch characteristic BHYS BHYS BRP -25Gs typ Awake Taw:20 μs Period Sleep Tsl:600μs Time Current Isp Iaw Iav Sample & Output

Hall Latch - High Sensitivity 3 V3.10 Nov 1, 2013 Absolute Maximum Ratings Parameter Symbol Value Units Supply Voltage VDD 28 V Supply Current IDD 50 mA Output Voltage VOUT 28 V Output Current IOUT 50 mA Operating Temperature Range TA -40 to 85 °C Storage Temperature Rang TS -50 to 150 °C ESD Sensitivity - 4000 V Operating Temperature Range Symbol Value Units Temperature Suffix “ E” TA -40 to 85 °C Temperature Suffix “ K” TA -40 to 125 °C Temperature Suffix “ L” TA -40 to 150 °C Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum- rated conditions for ex- tended periods may affect device reliability. General Electrical Specifications DC Operating Parameters TA = 25°C, VDD= 2.5V to 5.5V (unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Units Operating voltage VDD Operating 2.5 3 5.5 V Supply current IDD Average 45 μA Output Current IOUT 1.0 mA Saturation Voltage VSAT IOUT=1mA 0.4 V Awake mode time TAW Operating 20 μS Sleep mode time TSL Operating 600 μS Magnetic Specifications DC Operating Parameters VDD = 2.5 to 5.5V (unless otherwise specified) Package Parameter Symbol Test Conditions Min Typ Max Units UA Operating Point BOP Ta=25°C Vdd=2.75V DC 5 25 40 G Release Point BRP -40 -25 -5 G Hysteresis BHYST 40 G SO Operating Point BOP Ta=25°C Vdd=2.75V DC -40 -25 -5 G Release Point BRP 5 25 40 G Hysteresis BHYST 40 G

Hall Latch - High Sensitivity 4 V3.10 Nov 1, 2013 Output Behavior versus Magnetic Pole DC Operating Parameters TA = -40°C to 150°C, VDD = 2.5 to 5.5V (unless otherwise specified) Test Conditions (UA) Test Conditions (SO) OUT B < BRP B > BRP High B > BOP B < BOP Low The SOT-23 device is reversed from the UA package. The SOT-23 output transistor will be turned on(drops low) in the presence of a sufficiently strong North pole magnetic field applied to the marked face and turned off(hoists high) in the presence of a sufficiently strong South pole magnetic field.

Hall Latch - High Sensitivity 5 V3.10 Nov 1, 2013

Package Information

Package UA, 3-Pin SIP: 4.0 ± 0.01 1.27 2.13 1.87 1.00 1.20 45° ± 1° 1.52 ± 0.1 3° ± 1° 0.75 ± 0.05 3.0 ± 0.01 0.44± 0.01 0.05 ± 0.05 1.6.± 0.1 0.84(Nom) 3° ± 1° 6° ± 1° 6° ± 1° 3° ± 1° 14 .5 ± 1 Active Area Depth: Sensor Location Notes: 1). Controlling dimension : mm ; 2). Leads must be free of flash and plating voids ; 3). Do not bend leads within 1 mm of lead to package interface ; 4). PINOUT: Pin 1 V DD Pin 2 GND Pin 3 Output 0.39± 0.01 0.38 ± 0.01 2.54

Hall Latch - High Sensitivity 6 V3.10 Nov 1, 2013 Package ST, 3-Pin TSOT-23: Hall Plate Location

Ordering Information

Part No. Pb-free Temperature Code Package Code Packing SS2609ESTT YES -40°C to 85°C TSOT-23 7-in. reel, 3000 pieces/ reel SS2609EAU YES -40°C to 85°C TO-92 Bulk, 1000 pieces/ bag SS2609KSTT YES -40°C to 125°C TSOT-23 7-in. reel, 3000 pieces/ reel SS2609KAU YES -40°C to 125°C TO-92 Bulk, 1000 pieces/ bag SS2609LSTT YES -40°C to 150°C TSOT-23 7-in. reel, 3000 pieces/ reel SS2609LAU YES -40°C to 150°C TO-92 Bulk, 1000 pieces/ bag 0.36 0.46 0.95 1.50 Chip Bottom View of TSOT-23 Package 2.82 3.02 0.70 0.90 0.70 0.80 0.00 0.10 0.35 0.50 0.08 0.20 0.20 Min 2.65 2.95 1.60 1.70 1.70 2.10 2 1 Top Side Vie End Notes 1). PINOUT: Pin 1 VDD Pin 2 Output Pin 3 GND 2). All dimensions are in millimeters;