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Technical content

Features

− Micropower consumption for battery powered applications − Omnipolar, output switches with absolute value of North or South pole from magnet − Operation down to 2.5V − High sensitivity for direct reed switch replacement applications 3 pin SOT23 (suffix SO) 3 pin SIP (suffix UA) General Description The SS248 Omnipolar Hall effect sensor IC is fabr i- cated from mixed signal CMOS technology .It inco r- porates advanced chopper -stabilization techniques to provide accurate and stable magnetic switch points. The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall el e- ment and analog signal processing circuits. This serves to place the high current -consuming portions of the circuit into a “Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall element is evaluated against the predefined thresholds. If the flux density is above or below the Bop/Brp thresholds then the output transistor is driven to change states according- ly. While in the “Sleep” cycle the output transistor is latched in its previous state. The design has been op- timized for service in applications requiring extended operating lifetime in battery powered systems. The output transistor of the SS248 will be latched on (Bop) in the presence of a sufficiently strong South or North magnetic field facing the marked side of the package. The output will be latched off (Brp) in the absence of a magnetic field.

Applications

− Solid state switch − Handheld Wireless Handset Awake Switch − Lid close sensor for battery powered devices − Magnet proximity sensor for reed switch replacement in low duty cycle applications

CMOS Omnipolar High Sensitivity Micropower Hall Switch 2 V3.10 Nov 1, 2013 Typical Application Circuit SEC's pole-independent sensing technique allows for operation with either a north pole or south pole ma g- net orientation, enhancing the manufacturability of the device. The state- of-the-art technology provides the same output polarity for either pole face. It is strongly recommended that an external bypass capacitor be connected (in close proximity to the Hall sensor) between the supply and ground of the device to reduce both external noise and noise ge nerated by the chopper-stabilization technique. This is especially true due to the relatively high impedance of battery supplies. Functional Block Diagram VDD OUT Sleep/Awake Logic Chopper Hall Plate GND

CMOS Omnipolar High Sensitivity Micropower Hall Switch 3 V3.10 Nov 1, 2013 Pin Definitions and Descriptions SOT Pin № SIP Pin № Name Type Function 1 1 VDD Supply Supply Voltage pin 2 3 OUT Output Open Drain Output pin 3 2 GND Ground Ground pin Internal Timing Circuit Awake Taw:1 75μs Period Sleep Tsl:70ms Time Current Isp Iaw Iav Sample & Out- put Latched

CMOS Omnipolar High Sensitivity Micropower Hall Switch 4 V3.10 Nov 1, 2013 Absolute Maximum Ratings Parameter Symbol Val ue Units Supply Voltage(operating) VDD 6 V Supply Current IDD 5 mA Output V oltage VOUT 6 V Output Curent IOUT 5 mA Operating Temperature Range TA -40 to 85 °C Storage Temperature Rang TS -50 to 150 °C ESD Sensitivity - 4000 V Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute -maximum rated conditions for e x- tended periods may affect device reliability. DC Operating Parameters: TA = 25°C, VDD=2.75V . Parameter Symbol Test Conditions Min Typ Max Units Operating voltage VDD Operating 2.5 3 5.5 V Supply current IDD Average 5 μA Output Current IOUT 1.0 mA Saturation V oltage VS AT IOUT=1mA 0.4 V Awake mode time TAW Operating 175 μS Sleep mode time TSL Operating 70 mS Magnetic Characteristics Magnetic Flux(Gauss) ON BOPS BRPS BOPN BRPN OFF Output V oltage(V) 0 40 20 60 80 -60 -80 -40 -20 3.0 2.0 1.5 1.0 0.5 2.5

CMOS Omnipolar High Sensitivity Micropower Hall Switch 5 V3.10 Nov 1, 2013 Operating Parameters: TA = 25°C, VDD=2.75VDC. PARAMETER Symbol Min Type Max Units Operating Point Bop - +/-35 +/-60 Gs Release Point Brp +/-5 +/-21 - Gs Hysteresis Bhys - 14 - Gs ESD Protection Human Body Model (HBM) tests according to: Mil. Std. 883F method 3015.7 Parameter Symbol Limit Values Unit Notes Min Max ESD V oltage VESD ±4 kV Performance Characteristics

CMOS Omnipolar High Sensitivity Micropower Hall Switch 6 V3.10 Nov 1, 2013 Unique Features CMOS Hall IC Technology The chopper stabilized amplifier uses switched capacitor techniques to eliminate the amplifier offset voltage, which, in bipolar devices, is a major source of temperature sensitive drift. CMOS makes this advanced technique possible. The CMOS chip is also much smaller than a bipolar chip, allowing very sophisticated circuitry to be placed in less space. The small chip size also contributes to lower physical stress and less power consumption. Installation Comments Consider temperature coefficients of Hall IC and magnetics , as well as air g ap and life time variations. Observe temperature limits during wave soldering. Typical IR solder-reflow profile: − No Rapid Heating and Cooling. − Recommended Preheating for max. 2minutes at 150°C − Recommended Reflowing for max. 5seconds at 240°C ESD Precautions Electronic semiconductor products are sensitive to Electro Static Discharge (ESD). Always observe Electro Static Discharge control procedures whenever handling semiconductor products.

CMOS Omnipolar High Sensitivity Micropower Hall Switch 7 V3.10 Nov 1, 2013

Package Information

Package SO, 3-Pin SOT-23: 0.56 0.66 0.95 0.80 1.50 1.40 Chip Bottom View of SOT-23 Package 2.70 3.10 1.00 1.30 0.70 0.90 0.00 0.10 0.35 0.50 0.10 0.25 0.20 MIN 2.60 3.00 1.50 1.80 1.70 2.10 2 1 Top View Side View End View Notes: 1). PINOUT: Pin 1 VDD Pin 2 Output Pin 3 GND 2). All dimensions are in millimeters ;

CMOS Omnipolar High Sensitivity Micropower Hall Switch 8 V3.10 Nov 1, 2013 Package ST, 3-Pin TSOT-23: 0.36 0.46 0.95 0.80 1.50 1.40 Chip Bottom View of TSOT-23 Package 2.82 3.02 0.70 0.90 0.70 0.80 0.00 0.10 0.35 0.50 0.08 0.20 0.20 Min 2.65 2.95 1.60 1.70 1.70 2.10 2 1 Top View Side View End View Notes 1). PINOUT: Pin 1 VDD Pin 2 Output Pin 3 GND 2). All dimensions are in millimeters;

CMOS Omnipolar High Sensitivity Micropower Hall Switch 9 V3.10 Nov 1, 2013 Package UA, 3-Pin SIP: 4.0 ± 0.01 1.27 2.13 1.87 1.00 1.20 45° ± 1° 1.52 ± 0.1 3° ± 1° 0.75 ± 0.05 3.0 ± 0.01 0.44± 0.01 0.05 ± 0.05 1.6.± 0.1 0.84(Nom) 3° ± 1° 6° ± 1° 6° ± 1° 3° ± 1° 14 .5 ± 1 Active Area Depth: Sensor Location Notes: 1). Controlling dimension : mm ; 2). Leads must be free of flash and plating voids ; 3). Do not bend leads within 1 mm of lead to package interface ; 4). PINOUT: Pin 1 V DD Pin 2 GND Pin 3 Output 0.39± 0.01 0.38 ± 0.01 2.54

CMOS Omnipolar High Sensitivity Micropower Hall Switch 10 V3.10 Nov 1, 2013

Ordering Information

Part No. Pb-free Temperature Code Package Code Packing SS248ESOT YES -40°C to 85°C SOT-23 7-in. reel, 3000 pieces/ reel SS248ESTT YES -40°C to 85°C TSOT-23 7-in. reel, 3000 pieces/ reel SS248EUA YES -40°C to 85°C TO-92 Bulk, 1000 pieces/ bag SS248KSOT YES -40°C to 125°C SOT-23 7-in. reel, 3000 pieces/ reel SS248KSTT YES -40°C to 125°C TSOT-23 7-in. reel, 3000 pieces/ reel SS248KUA YES -40°C to 125°C TO-92 Bulk, 1000 pieces/ bag SS248LSOT YES -40°C to 150°C SOT-23 7-in. reel, 3000 pieces/ reel SS248LSTT YES -40°C to 150°C TSOT-23 7-in. reel, 3000 pieces/ reel SS248LUA YES -40°C to 150°C TO-92 Bulk, 1000 pieces/ bag